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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | TJ200F04M3L,LXHQ |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; Transistor Application: SWITCHING; No. of Terminals: 2; |
| Datasheet | TJ200F04M3L,LXHQ Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 200 A |
| Maximum Pulsed Drain Current (IDM): | 600 A |
| Surface Mount: | YES |
| No. of Terminals: | 2 |
| Maximum Power Dissipation (Abs): | 375 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0026 ohm |
| Avalanche Energy Rating (EAS): | 924 mJ |
| Maximum Feedback Capacitance (Crss): | 1150 pF |
| Polarity or Channel Type: | P-CHANNEL |
| Minimum DS Breakdown Voltage: | 40 V |
| Reference Standard: | AEC-Q101 |
