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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | TK160F10N1L,LXGQ |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; No. of Elements: 1; Case Connection: DRAIN; |
| Datasheet | TK160F10N1L,LXGQ Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 160 A |
| Maximum Pulsed Drain Current (IDM): | 480 A |
| Surface Mount: | YES |
| No. of Terminals: | 2 |
| Maximum Power Dissipation (Abs): | 375 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | S-PSSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | SQUARE |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0037 ohm |
| Avalanche Energy Rating (EAS): | 466 mJ |
| Maximum Feedback Capacitance (Crss): | 610 pF |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 100 V |
| Reference Standard: | AEC-Q101 |
