Toshiba - TK190E65Z

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TK190E65Z by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TK190E65Z
Description Power Field-Effect Transistors;
Datasheet TK190E65Z Datasheet
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JANTX2N6796 by Intersil

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IRF530A by Onsemi

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CSD18537NQ5A by Texas Instruments

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SIA456DJ-T1-GE3 by Vishay Intertechnology

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BS170 by Topaz Semiconductor

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IRF7425TRPBF-1 by Infineon Technologies

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IRF640 by Samsung

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N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Turn Off Time (toff): 140 ns; Transistor Application: SWITCHING;
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National Semiconductor

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 380 W; Avalanche Energy Rating (EAS): 830 mJ; Maximum Drain Current (Abs) (ID): 104 A;
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Vishay Intertechnology

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International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 144 W; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier;
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International Rectifier

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