SIJ478DP-T1-GE3 by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	SIJ478DP-T1-GE3
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-PSSO-G4; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet	SIJ478DP-T1-GE3 Datasheet
In Stock	5,966

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	45 mJ
Other Names:	SIJ478DP-T1-GE3TR SIJ478DP-T1-GE3DKR SIJ478DP-T1-GE3CT
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	60 A
Maximum Pulsed Drain Current (IDM):	150 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	4
Minimum DS Breakdown Voltage:	80 V
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Drain-Source On Resistance:	.008 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
5,966	-	-

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