SQ2315ES-T1_BE3 by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	SQ2315ES-T1_BE3
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: .05 ohm;
Datasheet	SQ2315ES-T1_BE3 Datasheet
In Stock	59,041

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Turn On Time (ton):	55 ns
Maximum Drain Current (ID):	5 A
Maximum Pulsed Drain Current (IDM):	20 A
Surface Mount:	YES
No. of Terminals:	3
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	62 ns
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain-Source On Resistance:	.05 ohm
Avalanche Energy Rating (EAS):	6 mJ
Maximum Feedback Capacitance (Crss):	240 pF
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	P-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	12 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
59,041	$0.172	$10,155.052

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