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Manufacturer | Vishay Intertechnology |
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Manufacturer's Part Number | SQJ860EP-T1_GE3 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Maximum Drain-Source On Resistance: .006 ohm; Reference Standard: AEC-Q101; |
Datasheet | SQJ860EP-T1_GE3 Datasheet |
In Stock | 87,574 |
NAME | DESCRIPTION |
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Avalanche Energy Rating (EAS): | 51 mJ |
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 36 A |
Maximum Pulsed Drain Current (IDM): | 120 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Minimum Operating Temperature: | -55 Cel |
No. of Terminals: | 4 |
Minimum DS Breakdown Voltage: | 40 V |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-G4 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 175 Cel |
Reference Standard: | AEC-Q101 |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .006 ohm |