Vishay Intertechnology - SQM10250E_GE3

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SQM10250E_GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SQM10250E_GE3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; No. of Terminals: 2; Maximum Turn On Time (ton): 45 ns;
Datasheet SQM10250E_GE3 Datasheet
In Stock2,745
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Turn On Time (ton): 45 ns
Maximum Drain Current (ID): 65 A
Maximum Pulsed Drain Current (IDM): 180 A
Surface Mount: YES
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 80 ns
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .03 ohm
Avalanche Energy Rating (EAS): 84 mJ
Other Names: SQM10250E_GE3TR
SQM10250E_GE3CT
SQM10250E_GE3DKR
Maximum Feedback Capacitance (Crss): 85 pF
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 250 V
Reference Standard: AEC-Q101
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