PIN DIODE PIN Diodes 1,939

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Forward Voltage (VF)	Maximum Diode Capacitance	Technology	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	JEDEC-95 Code	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency	Reference Standard
BAP51L,315	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER				ATTENUATOR; SWITCHING		TIN	R-PBCC-N2	1.5 ohm			Not Qualified	.5 W			.55 us		60 V	e3			SILICON
BAP50-04WT/R	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS			.6 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel		-65 Cel	TIN	R-PDSO-G3	5 ohm			Not Qualified	.24 W			1.05 us			e3			SILICON
BAP63LX	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	CHIP CARRIER	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PBCC-N2	1.5 ohm			Not Qualified	.135 W	.34 pF		.32 us		50 V	e3			SILICON	100 MHz
BAP50-04T/R	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS			.6 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel		-65 Cel	TIN	R-PDSO-G3	5 ohm			Not Qualified	.25 W			1.05 us	TO-236AB		e3			SILICON
BAP51-04W,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS			.55 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel		-65 Cel	TIN	R-PDSO-G3	2.5 ohm	1		Not Qualified	.24 W			.55 us			e3		260	SILICON
BAP55LX	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND		.28 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER				ATTENUATOR; SWITCHING		Tin (Sn)	R-PBCC-N2	.8 ohm	1		Not Qualified	.135 W			.27 us			e3	30	260	SILICON
BAP64LX	NXP Semiconductors	PIN DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PDSO-N2	1.5 ohm	1		Not Qualified	.15 W			1 us			e3	30	260	SILICON
BAP65-05W,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	COMMON CATHODE, 2 ELEMENTS			.9 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	.9 ohm	1		Not Qualified	.24 W	.7 pF		.17 us		30 V	e3	30	260	SILICON	100 MHz
BAP51-05W	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	COMMON CATHODE, 2 ELEMENTS			.55 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		150 Cel		-65 Cel	TIN	R-PDSO-G3	2.5 ohm			Not Qualified		.4 pF		.55 us		50 V	e3	30	260	SILICON	100 MHz
BAP50-03	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE			.55 pF	POSITIVE-INTRINSIC-NEGATIVE		1	1 V	SMALL OUTLINE	PIN Diodes		150 Cel		-65 Cel	Tin (Sn)	R-PDSO-G2	5 ohm	1		Not Qualified	.5 W	.55 pF				50 V	e3	30	260	SILICON	100 MHz
BAP63-02,115	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.32 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-F2	1.5 ohm			Not Qualified	.715 W	.36 pF		.31 us		50 V	e3	30	260	SILICON	100 MHz
BAP65LX,315	NXP Semiconductors	PIN DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE			.85 pF	POSITIVE-INTRINSIC-NEGATIVE		1	20 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-N2	.9 ohm	1		Not Qualified	.135 W	.37 pF		.18 us		30 V	e3	30	260	SILICON	100 MHz
BAP64-06W,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	COMMON ANODE, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2	1 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	1.35 ohm	1		Not Qualified	.24 W	.37 pF		1.55 us		100 V	e3	30	260	SILICON	100 MHz
BAP63-02	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.32 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PDSO-F2	1.5 ohm	1		Not Qualified	.715 W	.36 pF		.31 us		50 V	e3	30	260	SILICON	100 MHz
BAR50-02L	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	HIGH FREQUENCY TO C BAND		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	CHIP CARRIER	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-XBCC-N2	4.5 ohm			Not Qualified	.25 W	.1 pF	LOW DISTORTION	1.1 us		50 V	e3			SILICON
BXY44P-FPH	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	SQUARE	CERAMIC, METAL-SEALED COFIRED	1 mA	COMMON CATHODE, 2 ELEMENTS			.75 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	FLATPACK	PIN Diodes		175 Cel	ATTENUATOR; SWITCHING		MATTE TIN	S-CDFP-F4	1200 ohm			Not Qualified	.5 W	.5 pF		.8 us		200 V	e3			SILICON	100 MHz
BXY43A	Infineon Technologies	PIN DIODE				YES													PIN Diodes		150 Cel										.1 pF		.25 us		150 V
BXY43-TP	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE			.45 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	1.5 ohm		ISOLATED	Not Qualified	.5 W	.3 pF	HIGH RELIABILITY	.65 us		150 V	e3			SILICON	100 MHz
BAR5002VH6327XTSA1	Infineon Technologies	PIN DIODE																						MATTE TIN			1									e3
BA895	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	MEDIUM FREQUENCY TO L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	10 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING			R-PDSO-F2	7 ohm	1		Not Qualified		.23 pF		1.6 us		50 V				SILICON
BAR50-05	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	COMMON CATHODE, 2 ELEMENTS	HIGH FREQUENCY TO C BAND		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-PDSO-G3	4.5 ohm			Not Qualified	.25 W	.15 pF		1.1 us		50 V	e3			SILICON	100 MHz
BXY44-T2P	Infineon Technologies	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CEMW-N2	5 ohm			Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us		200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BA596	Infineon Technologies	PIN DIODE				YES			10 mA								50 V		PIN Diodes		125 Cel			Tin/Lead (Sn/Pb)		10 ohm					.23 pF				50 V	e0				100 MHz
BXY43-TES	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE			.45 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	1.5 ohm		ISOLATED	Not Qualified	.5 W	.3 pF	HIGH RELIABILITY	.65 us		150 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BAR88-07LRH	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				SWITCHING			R-XBCC-N4	2.5 ohm			Not Qualified	.25 W		LOW DISTORTION	.5 us		80 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BAR90-081LS	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	8	YES	RECTANGULAR	UNSPECIFIED	3 mA	1SE4			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		4	0 V	CHIP CARRIER	PIN Diodes		125 Cel	SWITCHING			R-XBCC-N8	2.3 ohm			Not Qualified	.1 W	.3 pF		.75 us		80 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
BA585E6433	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	MEDIUM FREQUENCY TO L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE				ATTENUATOR; SWITCHING			R-PDSO-G2	40 ohm			Not Qualified						50 V				SILICON
BA597E6327	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY		.32 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE				ATTENUATOR; SWITCHING			R-PDSO-G2	4.5 ohm			Not Qualified	.25 W			2.5 us		50 V				SILICON
BAR50-03WE6327	Infineon Technologies	PIN DIODE				YES										1	1 V		PIN Diodes		125 Cel						1				.24 pF		1.1 us		50 V			260
BAR17E6433	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	MEDIUM FREQUENCY		.55 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE				ATTENUATOR; SWITCHING			R-PDSO-G3				Not Qualified	.25 W		LOW DISTORTION	4 us						SILICON
BAR50-02V	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY TO C BAND		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		Matte Tin (Sn)	R-PDSO-F2	4.5 ohm	1		Not Qualified	.25 W	.3 pF	LOW DISTORTION	1.1 us		50 V	e3			SILICON
BXY42BA-5	Infineon Technologies	PIN DIODE				YES										1			PIN Diodes		175 Cel										.24 pF				50 V
BAR88-02LRH-E6327	Infineon Technologies	PIN DIODE				YES			1 mA								0 V		PIN Diodes		125 Cel					2.5 ohm	1				.25 pF		.5 us		80 V			260		100 MHz
BAR81W-E6327	Infineon Technologies	PIN DIODE				YES			5 mA								1 V		PIN Diodes		125 Cel					1 ohm	1				.6 pF		.08 us					260		100 MHz
BAR14-1E6433	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.01 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	HIGH FREQUENCY		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING			R-PDSO-G3	4200 ohm			Not Qualified	.25 W	.2 pF	LOW DISTORTION	1 us		100 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
BAR16-1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.01 mA	COMMON ANODE, 2 ELEMENTS	HIGH FREQUENCY		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR; SWITCHING	-55 Cel		R-PDSO-G3	12 ohm	1		Not Qualified	.25 W	.25 pF	LOW DISTORTION	1 us		100 V				SILICON	100 MHz
BAT18-04E6327	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	ULTRA HIGH FREQUENCY		1 pF	POSITIVE-INTRINSIC-NEGATIVE		2	20 V	SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING		MATTE TIN	R-PDSO-G3	.7 ohm	1		Not Qualified		.75 pF					e3		260	SILICON	100 MHz
BA885	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	1.5 mA	SINGLE	MEDIUM FREQUENCY TO L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-PDSO-G3	7 ohm	1		Not Qualified		.25 pF		1.6 us		50 V	e3	NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
BAR16-1E6433	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.01 mA	COMMON ANODE, 2 ELEMENTS	HIGH FREQUENCY		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING			R-PDSO-G3	4200 ohm			Not Qualified	.25 W	.2 pF	LOW DISTORTION	1 us		100 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
BXY43T1PZZZA1	Infineon Technologies	PIN DIODE																																			NOT SPECIFIED	NOT SPECIFIED
BXY44-TES	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	5 ohm		ISOLATED	Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us		200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BAR50-02LE6327TR	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	HIGH FREQUENCY TO C BAND		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER			150 Cel	ATTENUATOR; SWITCHING			R-XBCC-N2	4.5 ohm				.25 W		LOW DISTORTION	1.1 us				NOT SPECIFIED	NOT SPECIFIED	SILICON
BAR90-07L4	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND	.87 V	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	.05 uA	2	60 V	CHIP CARRIER	Other Diodes	80 V	150 Cel	SWITCHING	-55 Cel		R-XBCC-N4	2.3 ohm	1		Not Qualified	.25 W			.75 us		80 V				SILICON
BA885E6433	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	1.5 mA	SINGLE	MEDIUM FREQUENCY TO L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING			R-PDSO-G3	7 ohm			Not Qualified		.26 pF		1.6 us		50 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
BAR90-098LRH	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND	.87 V	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	.05 uA	2	60 V	CHIP CARRIER	Other Diodes	80 V	150 Cel	SWITCHING	-55 Cel		R-XBCC-N4	2.3 ohm			Not Qualified	.25 W			.75 us		80 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BA779-E6433	Infineon Technologies	PIN DIODE				YES			1.5 mA								0 V		PIN Diodes		150 Cel			MATTE TIN		40 ohm	1				.26 pF		1.6 us		50 V	e3				100 MHz
BAT18-04	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1 pF	POSITIVE-INTRINSIC-NEGATIVE		2	20 V	SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING		TIN	R-PDSO-G3	.7 ohm	1		Not Qualified		.75 pF		.12 us		35 V	e3			SILICON	100 MHz
BAT18-04S	Infineon Technologies	PIN DIODE	DUAL	GULL WING	6	YES	RECTANGULAR	PLASTIC/EPOXY		2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	1.2 V	1 pF	POSITIVE-INTRINSIC-NEGATIVE		4		SMALL OUTLINE	Other Diodes	35 V	150 Cel	SWITCHING	-55 Cel	TIN LEAD	R-PDSO-G6	.7 ohm			Not Qualified						35 V	e0			SILICON

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.