PIN DIODE PIN Diodes 1,939

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Forward Voltage (VF)	Maximum Diode Capacitance	Technology	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency	Reference Standard
BAR50-02L-E6433	Infineon Technologies	PIN DIODE				YES			.5 mA								1 V		PIN Diodes		125 Cel					40 ohm					.5 pF		1.1 us						100 MHz
BXY43-T1(ES)	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE			.45 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CXMW-G2	1.5 ohm			Not Qualified	.5 W	.3 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY44-T1H	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CXMW-G2	5 ohm			Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us	200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BA886	Infineon Technologies	PIN DIODE				YES			10 mA								50 V		PIN Diodes		125 Cel			Tin/Lead (Sn/Pb)		10 ohm					.23 pF			50 V	e0				100 MHz
BXY43-FPS	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE			.85 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	FLATPACK	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-CDFP-F4	1.5 ohm			Not Qualified	.5 W	.6 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz
BAR88-02L	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	1 mA	SINGLE	L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	5 V	CHIP CARRIER	PIN Diodes		125 Cel	SWITCHING		MATTE TIN	R-XBCC-N2	2.5 ohm			Not Qualified	.25 W	.25 pF	LOW DISTORTION	.5 us	80 V	e3			SILICON	100 MHz
BXY43-T1H	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE			.45 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CXMW-G2	1.5 ohm			Not Qualified	.5 W	.3 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz
BXY43P-FPS	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	SQUARE	CERAMIC, METAL-SEALED COFIRED	.02 mA	COMMON CATHODE, 2 ELEMENTS			.85 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	FLATPACK	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	S-CDFP-F4	1.5 ohm			Not Qualified	.5 W	.6 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz
BA595	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	1.5 mA	SINGLE	MEDIUM FREQUENCY TO L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	10 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-PDSO-G2	7 ohm	1		Not Qualified		.26 pF		1.6 us	50 V	e3	NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
BAR81	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE						1	1 V	SMALL OUTLINE	PIN Diodes			SWITCHING		TIN LEAD	R-PDSO-G4	.7 ohm		ANODE AND CATHODE	Not Qualified		.6 pF			30 V	e0			SILICON
BXY42T1ESZZZA1	Infineon Technologies	PIN DIODE																																		NOT SPECIFIED	NOT SPECIFIED
BXY43-FPP	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE			.85 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	FLATPACK	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-CDFP-F4	1.5 ohm			Not Qualified	.5 W	.6 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz
BXY43-P1P	Infineon Technologies	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE			.75 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CEMW-N2	1.5 ohm			Not Qualified	.5 W	.5 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz
BAR89-02LRH-E6433	Infineon Technologies	PIN DIODE				YES			10 mA								1 V		PIN Diodes		125 Cel			MATTE TIN		1.5 ohm	1				.25 pF		.8 us	80 V	e3		260		100 MHz
BXY43-T1(P)	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE			.45 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CXMW-G2	1.5 ohm			Not Qualified	.5 W	.3 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz
BAT18-06	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	COMMON ANODE, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1 pF	POSITIVE-INTRINSIC-NEGATIVE		2	20 V	SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING		TIN LEAD	R-PDSO-G3	.7 ohm			Not Qualified		.75 pF			35 V	e0			SILICON	100 MHz
BAR15-1E6327	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.01 mA	COMMON CATHODE, 2 ELEMENTS	HIGH FREQUENCY		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-PDSO-G3	4200 ohm	1		Not Qualified	.25 W	.2 pF	LOW DISTORTION	1 us	100 V	e3	40	260	SILICON	100 MHz
BA887	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	HIGH FREQUENCY			POSITIVE-INTRINSIC-NEGATIVE		1	10 V	SMALL OUTLINE	PIN Diodes			ATTENUATOR; SWITCHING			R-PDSO-G3	4.2 ohm			Not Qualified	.25 W	.52 pF	LOW DISTORTION	2.5 us	50 V				SILICON
BAR90-099L4	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND	.87 V	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	.05 uA	2	60 V	CHIP CARRIER	Other Diodes	80 V	150 Cel	SWITCHING	-55 Cel		R-XBCC-N4	2.3 ohm	1		Not Qualified	.25 W			.75 us	80 V				SILICON
BXY43P	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	SQUARE	CERAMIC, METAL-SEALED COFIRED	.02 mA	COMMON CATHODE, 2 ELEMENTS			.85 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	FLATPACK	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING			S-CDFP-F4	3 ohm			Not Qualified	.5 W	.85 pF		.65 us					SILICON	100 MHz
BAR9002LRHE6327XT	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER			125 Cel	SWITCHING	-55 Cel		R-XBCC-N2	2.3 ohm				.25 W			.75 us	80 V				SILICON
BAR88-02V	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SINGLE	L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING		Matte Tin (Sn)	R-PDSO-F2	2.5 ohm	1		Not Qualified	.25 W	.35 pF	LOW DISTORTION	.5 us	80 V	e3			SILICON	100 MHz
BA885E6327	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	1.5 mA	SINGLE	MEDIUM FREQUENCY TO L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-PDSO-G3	7 ohm	1		Not Qualified		.26 pF		1.6 us	50 V	e3		260	SILICON	100 MHz
BA585	Infineon Technologies	PIN DIODE				YES			1.5 mA										PIN Diodes		125 Cel					40 ohm					.25 pF								100 MHz
BA895E6327	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	1.5 mA	SINGLE	MEDIUM FREQUENCY TO L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-PDSO-F2	7 ohm	1		Not Qualified		.26 pF		1.6 us		e3		260	SILICON	100 MHz
BAT18-05E6327	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	COMMON CATHODE, 2 ELEMENTS	ULTRA HIGH FREQUENCY		1 pF	POSITIVE-INTRINSIC-NEGATIVE		2	20 V	SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING		MATTE TIN	R-PDSO-G3	.7 ohm	1		Not Qualified		.75 pF				e3		260	SILICON	100 MHz
BXY44-FPES	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.75 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	FLATPACK	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-CDFP-F4	5 ohm			Not Qualified	.5 W	.5 pF	HIGH RELIABILITY	.8 us	200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY44-TH	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	5 ohm		ISOLATED	Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us	200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BAR50-02V-E6433	Infineon Technologies	PIN DIODE				YES											1 V		PIN Diodes		125 Cel										.24 pF		1.1 us	50 V
BXY42-T	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED		SINGLE			.24 pF	POSITIVE-INTRINSIC-NEGATIVE		1		MICROWAVE			175 Cel	SWITCHING			R-CXMW-G2	3.5 ohm			Not Qualified			HIGH RELIABILITY	.05 us					SILICON
BAR88-02V-E6433	Infineon Technologies	PIN DIODE				YES			1 mA								0 V		PIN Diodes		125 Cel					2.5 ohm					.25 pF		.5 us	80 V					100 MHz
BA597E6433	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY		.32 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE				ATTENUATOR; SWITCHING			R-PDSO-G2	4.5 ohm			Not Qualified	.25 W			2.5 us	50 V				SILICON
BXY44-FP	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED		SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING			R-CDSO-F4	5 ohm			Not Qualified	.5 W	.5 pF	HIGH RELIABILITY	.8 us	200 V				SILICON		ESA-SCC-5513/030
BAR8802LRHE6327XTSA1	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER			150 Cel	SWITCHING		GOLD	R-XBCC-N2	2.5 ohm	1			.25 W		LOW DISTORTION	.5 us	80 V	e4			SILICON
BXY44-T2S	Infineon Technologies	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CEMW-N2	5 ohm			Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us	200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BAR95-02LS	Infineon Technologies	PIN DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	10 mA	SINGLE	ULTRA HIGH FREQUENCY		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1	1 V	SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING			R-XDSO-N2	1.5 ohm			Not Qualified	.15 W	250000 pF		.5 us	50 V				SILICON	100 MHz
BAR161E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON ANODE, 2 ELEMENTS	HIGH FREQUENCY		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING			R-PDSO-G3	12 ohm				.25 W		LOW DISTORTION	1 us	100 V				SILICON
BAR14-1E6327	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.01 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	HIGH FREQUENCY		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-PDSO-G3	4200 ohm	1		Not Qualified	.25 W	.2 pF	LOW DISTORTION	1 us	100 V	e3	40	260	SILICON	100 MHz
BA595E6327BTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	MEDIUM FREQUENCY TO L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING			R-PDSO-G2	7 ohm							1.6 us	50 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BAR81W-E6433	Infineon Technologies	PIN DIODE				YES			5 mA								1 V		PIN Diodes		125 Cel					1 ohm	1				.6 pF		.08 us						100 MHz
BXY42-TP	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.24 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	LONG FORM	PIN Diodes		175 Cel	SWITCHING		MATTE TIN	O-CELF-R2	2.5 ohm		ISOLATED	Not Qualified	.6 W	.24 pF	HIGH RELIABILITY	.05 us	50 V	e3			SILICON	100 MHz
BAR5003WE6327XT	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY TO C BAND		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING			R-PDSO-G2	4.5 ohm				.25 W		LOW DISTORTION	1.1 us			NOT SPECIFIED	NOT SPECIFIED	SILICON
BXY44-TS	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	5 ohm		ISOLATED	Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us	200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY42T1PZZZA1	Infineon Technologies	PIN DIODE																																		NOT SPECIFIED	NOT SPECIFIED
BXY44-FPP	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.75 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	FLATPACK	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-CDFP-F4	5 ohm			Not Qualified	.5 W	.5 pF	HIGH RELIABILITY	.8 us	200 V	e3			SILICON	100 MHz
BA779E6327	Infineon Technologies	PIN DIODE				YES			1.5 mA							1	0 V		PIN Diodes		150 Cel					40 ohm					.26 pF		1.6 us	50 V					100 MHz
BXY43P-FPH	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	SQUARE	CERAMIC, METAL-SEALED COFIRED	.02 mA	COMMON CATHODE, 2 ELEMENTS			.85 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	FLATPACK	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	S-CDFP-F4	1.5 ohm			Not Qualified	.5 W	.6 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz
BXY44-FPH	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.75 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	FLATPACK	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-CDFP-F4	5 ohm			Not Qualified	.5 W	.5 pF	HIGH RELIABILITY	.8 us	200 V	e3			SILICON	100 MHz

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.