2 PIN Diodes 506

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Diode Capacitance	Technology	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency	Reference Standard
CLA4603-085LF	Skyworks Solutions	PIN DIODE	DUAL	NO LEAD	2	YES	SQUARE	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY TO C BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		175 Cel	LIMITER	-55 Cel	TIN	S-PDSO-N2	2 ohm	1	CATHODE		2 W			.01 us	20 V	e3		260	SILICON
BAR6302VH6327XTSA1	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		125 Cel	SWITCHING	-55 Cel	TIN	R-PDSO-F2	2 ohm	1			.25 W			.075 us	50 V	e3			SILICON		AEC-Q101
DC2118B	Gec Plessey Semiconductors	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	100 mA	SINGLE	HIGH FREQUENCY TO KU BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; LIMITER; SWITCHING	-55 Cel		O-CEMW-N2	1 ohm			Not Qualified	.25 W			.05 us	100 V				SILICON
NTE555	Nte Electronics	PIN DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	1 pF	POSITIVE-INTRINSIC-NEGATIVE	1	20 V	IN-LINE		125 Cel	SWITCHING	-55 Cel		R-PDIP-T2					.4 W	.48 pF		.0001 us	50 V				SILICON
BAR9002ELSE6327XTSA1	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	3 mA	SINGLE	C BAND		POSITIVE-INTRINSIC-NEGATIVE	1	0 V	CHIP CARRIER		125 Cel	SWITCHING	-55 Cel	GOLD	R-PBCC-N2	2.3 ohm	1			.15 W	.35 pF	HIGH VOLTAGE	.75 us	80 V	e4			SILICON	100 MHz
BA595E6327	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	1.5 mA	SINGLE	MEDIUM FREQUENCY TO L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-PDSO-G2	7 ohm	1		Not Qualified		.26 pF		1.6 us	50 V	e3		260	SILICON	100 MHz
MA4P504-1072T	M/a-com Technology Solutions	PIN DIODE	UPPER	NO LEAD	2	YES	SQUARE	CERAMIC, METAL-SEALED COFIRED	100 mA	SINGLE	S BAND	.5 pF	POSITIVE-INTRINSIC-NEGATIVE	1		UNCASED CHIP	PIN Diodes	175 Cel	SWITCHING		TIN OVER NICKEL	S-CUUC-N2	.6 ohm		CATHODE	Not Qualified	10 W		HIGH RELIABILITY, HIGH VOLTAGE, LOW LEAKAGE CURRENT	1 us	500 V	e3		260	SILICON	100 MHz
DC2110A	Gec Plessey Semiconductors	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	20 mA	SINGLE	HIGH FREQUENCY TO KU BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; LIMITER; SWITCHING	-55 Cel		O-CEMW-N2	2 ohm			Not Qualified	.25 W			.005 us	50 V				SILICON
BAR8802VH6327XTSA1	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		125 Cel	SWITCHING	-55 Cel	MATTE TIN	R-PDSO-F2	2.5 ohm	1			.25 W			.5 us	80 V	e3			SILICON
BAP64-02,115	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-F2	1.35 ohm	1		Not Qualified	.715 W	.48 pF	HIGH VOLTAGE	1.55 us	175 V	e3	30	260	SILICON	100 MHz
SMP1321-085LF	Skyworks Solutions	PIN DIODE	DUAL	NO LEAD	2	YES	SQUARE	PLASTIC/EPOXY	10 mA	SINGLE	HIGH FREQUENCY TO C BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	30 V	SMALL OUTLINE		150 Cel	ATTENUATOR; SWITCHING	-40 Cel		S-PDSO-N2	2 ohm	1	CATHODE		1.4 W	.27 pF	LOW DISTORTION	.4 us				260	SILICON	100 MHz
UM7512DR	Microchip Technology	PIN DIODE	RADIAL	FLAT	2	NO	ROUND	UNSPECIFIED		SINGLE		1 pF	POSITIVE-INTRINSIC-NEGATIVE	1		POST/STUD MOUNT			ATTENUATOR; SWITCHING		TIN LEAD	O-XRPM-F2	1 ohm			Not Qualified	7.5 W		LOW DISTORTION, METALLURGICALLY BONDED	3.5 us		e0			SILICON
BAP65-03,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE		.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G2	.9 ohm	1		Not Qualified	.5 W	.65 pF		.17 us	30 V	e3	30	260	SILICON	100 MHz
BAR6302VH6327XT	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	SWITCHING		MATTE TIN	R-PDSO-F2	2 ohm				.25 W			.075 us	50 V	e3			SILICON		AEC-Q101
UM6606A	Microchip Technology	PIN DIODE	END	NO LEAD	2	YES	ROUND	UNSPECIFIED	100 mA	SINGLE	ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	100 V	MICROWAVE	PIN Diodes	175 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN LEAD	O-XEMW-N2	2.5 ohm			Not Qualified	6 W	.4 pF		1 us	600 V	e0			SILICON	100 MHz
UM6601B	Microchip Technology	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	100 mA	SINGLE	ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	100 V	LONG FORM	PIN Diodes	175 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN LEAD	O-XALF-W2	2.5 ohm		ISOLATED	Not Qualified	2.5 W	.4 pF		1 us	100 V	e0			SILICON	100 MHz
UM6606SM	Microchip Technology	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	UNSPECIFIED		SINGLE	ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM			ATTENUATOR; SWITCHING		TIN LEAD	O-XELF-R2	2.5 ohm		ISOLATED	Not Qualified	4.5 W			1 us	600 V	e0			SILICON
CLA4607-085LF	Skyworks Solutions	PIN DIODE	DUAL	NO LEAD	2	YES	SQUARE	PLASTIC/EPOXY	10 mA	SINGLE		.35 pF	SCHOTTKY	1		SMALL OUTLINE		150 Cel	LIMITER	-55 Cel	TIN	S-PDSO-N2	2 ohm	1	CATHODE		1.3 W	.3 pF		.05 us	180 V	e3		260	SILICON	500 MHz
BAR88-02VE6327	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SINGLE	ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING	-55 Cel	MATTE TIN	R-PDSO-F2	2.5 ohm	1			.25 W	.25 pF		.5 us	80 V	e3		260	SILICON	100 MHz
DC2118A	Gec Plessey Semiconductors	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	100 mA	SINGLE	HIGH FREQUENCY TO KU BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; LIMITER; SWITCHING	-55 Cel		O-CEMW-N2	1 ohm			Not Qualified	.25 W			.05 us	100 V				SILICON
UM6610B	Microchip Technology	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	100 mA	SINGLE	ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	100 V	LONG FORM	PIN Diodes	175 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN LEAD	O-XALF-W2	2.5 ohm		ISOLATED	Not Qualified	2.5 W	.4 pF		1 us	1000 V	e0			SILICON	100 MHz
BAR6303WE6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	SWITCHING		TIN	R-PDSO-G2	2 ohm	1			.25 W			.075 us	50 V	e3			SILICON
BAR8802VE6327XTSA1	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	SWITCHING	-55 Cel	MATTE TIN	R-PDSO-F2	2.5 ohm				.25 W			.5 us	80 V	e3			SILICON
SMP1330-040LF	Skyworks Solutions	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE		1 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		175 Cel	LIMITER	-55 Cel		R-PBCC-N2	1.9 ohm	1		Not Qualified	.75 W			.004 us	20 V		40	260	SILICON
BAR88-02VE6127	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		125 Cel	SWITCHING	-55 Cel	MATTE TIN	R-PDSO-F2	2.5 ohm				.25 W		LOW DISTORTION	.5 us	80 V	e3			SILICON
MPN1000-12	M/a-com Technology Solutions	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	UNSPECIFIED	50 mA	SINGLE	HIGH FREQUENCY	.02 pF	POSITIVE-INTRINSIC-NEGATIVE	2	10 V	MICROWAVE		150 Cel	SWITCHING	-55 Cel		R-XDMW-F2	4 ohm				.25 W			.08 us	100 V				SILICON	1000 MHz
BAR6403WE6327XT	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	MEDIUM FREQUENCY TO C BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		125 Cel	ATTENUATOR; SWITCHING	-55 Cel		R-PDSO-G2	1.35 ohm				.25 W		LOW DISTORTION	1.55 us	150 V		NOT SPECIFIED	NOT SPECIFIED	SILICON		AEC-Q101
CLA4605-085LF	Skyworks Solutions	PIN DIODE	DUAL	NO LEAD	2	YES	SQUARE	UNSPECIFIED		SINGLE	HIGH FREQUENCY TO C BAND	.045 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		175 Cel	LIMITER			S-XDSO-N2	2 ohm	1	CATHODE	Not Qualified	3 W			.007 us	30 V			260	SILICON
BAP51-02,115	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE		.55 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel		-65 Cel	TIN	R-PDSO-F2	2.5 ohm	1		Not Qualified	.715 W	.4 pF			60 V	e3	30	260	SILICON	100 MHz
MPL4700-206/TR	Microchip Technology	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	10 mA	SINGLE	X BAND	.15 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		150 Cel		-55 Cel		R-XBCC-N2	2 ohm								25 V				SILICON
MPL4701-206	Microchip Technology	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	10 mA	SINGLE	ULTRA HIGH FREQUENCY TO X BAND	.2 pF	POSITIVE-INTRINSIC-NEGATIVE	1	10 V	CHIP CARRIER	PIN Diodes	150 Cel	LIMITER	-55 Cel	GOLD	R-XBCC-N2	2.5 ohm								15 V	e4			SILICON	1000 MHz
BA595E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	MEDIUM FREQUENCY TO L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	ATTENUATOR; SWITCHING		TIN	R-PDSO-G2	7 ohm	1		Not Qualified				1.6 us	50 V	e3			SILICON
CLA4603-219	Skyworks Solutions	PIN DIODE	DUAL	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	10 mA	SINGLE	KA BAND		POSITIVE-INTRINSIC-NEGATIVE	1	0 V	MICROWAVE	PIN Diodes	175 Cel	LIMITER	-65 Cel		O-CDMW-N2	2 ohm			Not Qualified		.2 pF		.005 us	20 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	500 MHz
UM9415	Microchip Technology	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	50 mA	SINGLE		4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	175 Cel	SWITCHING	-65 Cel	TIN LEAD	O-LALF-W2	1 ohm		ISOLATED	Not Qualified	2.5 W	4 pF	LOW DISTORTION	5 us	50 V	e0			SILICON	100 MHz
UM9415B	Microchip Technology	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	50 mA	SINGLE	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	LONG FORM	PIN Diodes		SWITCHING		TIN LEAD	O-XALF-W2	1 ohm		ISOLATED	Not Qualified	2.5 W	4 pF	LOW DISTORTION	5 us	50 V	e0			SILICON	100 MHz
UM9415SM	Microchip Technology	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	50 mA	SINGLE	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	LONG FORM	PIN Diodes		SWITCHING		TIN LEAD	O-LELF-R2	1 ohm		ISOLATED	Not Qualified	2.5 W	4 pF	LOW DISTORTION	5 us	50 V	e0			SILICON	100 MHz
BAP50-03,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE		.55 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	SMALL OUTLINE	PIN Diodes	150 Cel		-65 Cel	TIN	R-PDSO-G2	5 ohm	1		Not Qualified	.5 W	.55 pF			50 V	e3	30	260	SILICON	100 MHz
BAP50-03-TP	Micro Commercial Components	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE		1.11 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel		-65 Cel	MATTE TIN	R-PDSO-G2	5 ohm	1		Not Qualified	.2 W					e3	10	260	SILICON
BAP65-02,115	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE		.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-F2	.9 ohm	1		Not Qualified	.715 W	.65 pF	HIGH VOLTAGE	.17 us	30 V	e3	30	260	SILICON	100 MHz
RN731VTE-17	ROHM	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	35 V	SMALL OUTLINE	PIN Diodes	125 Cel	ATTENUATOR		TIN SILVER COPPER	R-PDSO-F2	7 ohm			Not Qualified	.1 W	.4 pF	HIGH RELIABILITY		50 V	e1			SILICON	100 MHz
SMP1321-011LF	Skyworks Solutions	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY TO S BAND	.25 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			SWITCHING		MATTE TIN	R-PDSO-G2	2 ohm	1	ISOLATED	Not Qualified	.25 W			.4 us		e3		260	SILICON
SMP1331-079LF	Skyworks Solutions	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SINGLE	HIGH FREQUENCY TO X BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	30 V	SMALL OUTLINE		150 Cel	ATTENUATOR; SWITCHING	-65 Cel		R-PDSO-F2	14.5 ohm				.25 W	.18 pF	LOW DISTORTION	.6 us			NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
UM9401SM	Microchip Technology	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	50 mA	SINGLE	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	1.5 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	LONG FORM	PIN Diodes		SWITCHING		TIN LEAD	O-LELF-R2	1 ohm		ISOLATED	Not Qualified	1.5 W	1.5 pF	LOW DISTORTION	2 us	50 V	e0			SILICON	100 MHz
BAR63-02V-H6327	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	5 V	SMALL OUTLINE	PIN Diodes	125 Cel	SWITCHING	-55 Cel	MATTE TIN	R-PDSO-F2	2 ohm	1			.25 W	.25 pF		.075 us	50 V	e3		260	SILICON	100 MHz
BAR63-03WE6433	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	5 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING			R-PDSO-G2	2 ohm	1		Not Qualified	.25 W	.25 pF		.075 us	50 V			260	SILICON	100 MHz
CLA4607-219	Skyworks Solutions	PIN DIODE	DUAL	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	10 mA	SINGLE	KA BAND		POSITIVE-INTRINSIC-NEGATIVE	1	0 V	MICROWAVE	PIN Diodes	175 Cel	LIMITER	-65 Cel		O-CDMW-N2	2 ohm			Not Qualified		.2 pF		.05 us	120 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	500 MHz
DC2103A	Gec Plessey Semiconductors	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	100 mA	SINGLE	HIGH FREQUENCY TO KU BAND	1 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; LIMITER; SWITCHING	-55 Cel		O-CEMW-N2	1.2 ohm			Not Qualified	.25 W		AVAILABLE IN BOTH POLARITIES	2 us	500 V				SILICON
MA4P506-1072T	M/a-com Technology Solutions	PIN DIODE	UPPER	NO LEAD	2	YES	SQUARE	CERAMIC, METAL-SEALED COFIRED	100 mA	SINGLE		1 pF	POSITIVE-INTRINSIC-NEGATIVE	1		UNCASED CHIP	PIN Diodes	175 Cel	SWITCHING			S-CUUC-N2	.3 ohm		CATHODE	Not Qualified	1.5 W		HIGH RELIABILITY, HIGH VOLTAGE, LOW LEAKAGE CURRENT	3 us	500 V		5	265	SILICON	100 MHz

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.