2 PIN Diodes 506

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Diode Capacitance	Technology	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency	Reference Standard
BA595E6433HTMA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	MEDIUM FREQUENCY TO L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	ATTENUATOR; SWITCHING			R-PDSO-G2	7 ohm			Not Qualified				1.6 us	50 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BXY43-T1S	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE		.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CXMW-G2	1.5 ohm			Not Qualified	.5 W	.3 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz
BXY42-TES	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.24 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	175 Cel	SWITCHING		MATTE TIN	O-CELF-R2	2.5 ohm		ISOLATED	Not Qualified	.6 W	.24 pF	HIGH RELIABILITY	.05 us	50 V	e3			SILICON	100 MHz	ESA-SCC-5513/017
BXY44-T1ES	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CXMW-G2	5 ohm			Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us	200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY42-T1(ES)	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.24 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	175 Cel	SWITCHING		MATTE TIN	O-CXMW-G2	2.5 ohm			Not Qualified	.35 W	.24 pF	HIGH RELIABILITY	.05 us	50 V	e3			SILICON	100 MHz	ESA-SCC-5513/017
BXY43-P1ES	Infineon Technologies	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE		.75 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CEMW-N2	1.5 ohm			Not Qualified	.5 W	.5 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY44-T2ES	Infineon Technologies	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CEMW-N2	5 ohm			Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us	200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BAR90-02L	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		150 Cel	SWITCHING		MATTE TIN	R-XBCC-N2	2.3 ohm			Not Qualified	.25 W			.75 us	80 V	e3			SILICON
BAR90-02EL	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		125 Cel	SWITCHING	-55 Cel	GOLD	R-XBCC-N2	2.3 ohm	1			.25 W			.75 us	80 V	e4			SILICON
BAR50-03W	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY TO C BAND	.5 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING			R-PDSO-G2	4.5 ohm	1		Not Qualified	.25 W	.24 pF	LOW DISTORTION	1.1 us	50 V				SILICON
BXY42-T1S	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.24 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	175 Cel	SWITCHING		MATTE TIN	O-CXMW-G2	2.5 ohm			Not Qualified	.35 W	.24 pF	HIGH RELIABILITY	.05 us	50 V	e3			SILICON	100 MHz
BA597	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	HIGH FREQUENCY		POSITIVE-INTRINSIC-NEGATIVE	1	10 V	SMALL OUTLINE	PIN Diodes		ATTENUATOR; SWITCHING		TIN LEAD	R-PDSO-G2	4.2 ohm			Not Qualified	.25 W	.52 pF	LOW DISTORTION	2.5 us	50 V	e0			SILICON
BAR89-02LRH	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	10 mA	SINGLE	L BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	CHIP CARRIER	PIN Diodes	150 Cel	SWITCHING			R-XBCC-N2	1.5 ohm	1		Not Qualified	.25 W	.25 pF	LOW DISTORTION	.8 us	80 V				SILICON	100 MHz
BXY44-T1P	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CXMW-G2	5 ohm			Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us	200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY44-TP	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	5 ohm		ISOLATED	Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us	200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY43-TS	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE		.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	1.5 ohm		ISOLATED	Not Qualified	.5 W	.3 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz
BAR89-02L	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	10 mA	SINGLE	L BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	CHIP CARRIER	PIN Diodes	125 Cel	SWITCHING			R-XBCC-N2	1.5 ohm			Not Qualified	.25 W	.25 pF	LOW DISTORTION	.8 us	80 V				SILICON	100 MHz
BXY42-T1H	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.24 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	175 Cel	SWITCHING		MATTE TIN	O-CXMW-G2	2.5 ohm			Not Qualified	.35 W	.24 pF	HIGH RELIABILITY	.05 us	50 V	e3			SILICON	100 MHz
BXY43-TH	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE		.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	1.5 ohm		ISOLATED	Not Qualified	.5 W	.3 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz
BA585E6327	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	MEDIUM FREQUENCY TO L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			ATTENUATOR; SWITCHING			R-PDSO-G2	40 ohm			Not Qualified					50 V				SILICON
BXY43-P1H	Infineon Technologies	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE		.75 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CEMW-N2	1.5 ohm			Not Qualified	.5 W	.5 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz
BXY42-T1	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED		SINGLE		.24 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE		175 Cel	SWITCHING			R-CXMW-G2	3.5 ohm			Not Qualified			HIGH RELIABILITY	.05 us					SILICON
BA595E6433	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	1.5 mA	SINGLE	MEDIUM FREQUENCY TO L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-PDSO-G2	7 ohm	1		Not Qualified		.26 pF		1.6 us	50 V	e3		260	SILICON	100 MHz
BXY43-T1(ES)	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE		.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CXMW-G2	1.5 ohm			Not Qualified	.5 W	.3 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY44-T1H	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CXMW-G2	5 ohm			Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us	200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BAR88-02L	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	1 mA	SINGLE	L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	5 V	CHIP CARRIER	PIN Diodes	125 Cel	SWITCHING		MATTE TIN	R-XBCC-N2	2.5 ohm			Not Qualified	.25 W	.25 pF	LOW DISTORTION	.5 us	80 V	e3			SILICON	100 MHz
BXY43-T1H	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE		.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CXMW-G2	1.5 ohm			Not Qualified	.5 W	.3 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz
BA595	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	1.5 mA	SINGLE	MEDIUM FREQUENCY TO L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	10 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-PDSO-G2	7 ohm	1		Not Qualified		.26 pF		1.6 us	50 V	e3	NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
BXY43-P1P	Infineon Technologies	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE		.75 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CEMW-N2	1.5 ohm			Not Qualified	.5 W	.5 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz
BXY43-T1(P)	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE		.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CXMW-G2	1.5 ohm			Not Qualified	.5 W	.3 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz
BAR9002LRHE6327XT	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		125 Cel	SWITCHING	-55 Cel		R-XBCC-N2	2.3 ohm				.25 W			.75 us	80 V				SILICON
BAR88-02V	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SINGLE	L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING		Matte Tin (Sn)	R-PDSO-F2	2.5 ohm	1		Not Qualified	.25 W	.35 pF	LOW DISTORTION	.5 us	80 V	e3			SILICON	100 MHz
BA895E6327	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	1.5 mA	SINGLE	MEDIUM FREQUENCY TO L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	125 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-PDSO-F2	7 ohm	1		Not Qualified		.26 pF		1.6 us		e3		260	SILICON	100 MHz
BXY44-TH	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	5 ohm		ISOLATED	Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us	200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY42-T	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED		SINGLE		.24 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE		175 Cel	SWITCHING			R-CXMW-G2	3.5 ohm			Not Qualified			HIGH RELIABILITY	.05 us					SILICON
BA597E6433	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY	.32 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			ATTENUATOR; SWITCHING			R-PDSO-G2	4.5 ohm			Not Qualified	.25 W			2.5 us	50 V				SILICON
BAR8802LRHE6327XTSA1	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		150 Cel	SWITCHING		GOLD	R-XBCC-N2	2.5 ohm	1			.25 W		LOW DISTORTION	.5 us	80 V	e4			SILICON
BXY44-T2S	Infineon Technologies	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CEMW-N2	5 ohm			Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us	200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BAR95-02LS	Infineon Technologies	PIN DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	10 mA	SINGLE	ULTRA HIGH FREQUENCY	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	SMALL OUTLINE	PIN Diodes	125 Cel	SWITCHING			R-XDSO-N2	1.5 ohm			Not Qualified	.15 W	250000 pF		.5 us	50 V				SILICON	100 MHz
BA595E6327BTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	MEDIUM FREQUENCY TO L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	ATTENUATOR; SWITCHING			R-PDSO-G2	7 ohm							1.6 us	50 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BXY42-TP	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.24 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	175 Cel	SWITCHING		MATTE TIN	O-CELF-R2	2.5 ohm		ISOLATED	Not Qualified	.6 W	.24 pF	HIGH RELIABILITY	.05 us	50 V	e3			SILICON	100 MHz
BAR5003WE6327XT	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY TO C BAND	.5 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	ATTENUATOR; SWITCHING			R-PDSO-G2	4.5 ohm				.25 W		LOW DISTORTION	1.1 us			NOT SPECIFIED	NOT SPECIFIED	SILICON
BXY44-TS	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	5 ohm		ISOLATED	Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us	200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BAR9002LRHE6327XTSA1	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		150 Cel	SWITCHING			R-XBCC-N2	2.3 ohm				.25 W			.75 us	80 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
SP000743446	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		125 Cel	SWITCHING	-55 Cel		R-PDSO-F2	.9 ohm				.25 W			.08 us	30 V				SILICON
SP000010172	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		125 Cel	SWITCHING	-55 Cel		R-PDSO-G2	2 ohm				.25 W			.075 us	50 V		NOT SPECIFIED	NOT SPECIFIED	SILICON		AEC-Q101
BAR67-02V	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	L BAND	.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1	5 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN	R-PDSO-F2	1.8 ohm	1		Not Qualified	.25 W	.35 pF		.7 us	150 V	e3			SILICON
BAR64-02L	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	1 mA	SINGLE	MEDIUM FREQUENCY TO C BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	20 V	CHIP CARRIER	PIN Diodes	125 Cel	ATTENUATOR; SWITCHING			R-XBCC-N2	1.35 ohm			Not Qualified	.25 W	.23 pF	LOW DISTORTION	1.55 us	150 V				SILICON	100 MHz

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.