2 PIN Diodes 506

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Diode Capacitance	Technology	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency	Reference Standard
BAR63-03WE6327	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	5 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING			R-PDSO-G2	2 ohm	1	Not Qualified	.25 W	.25 pF		.075 us	50 V			260	SILICON	100 MHz
BAR65-03WE6433	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE		.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	125 Cel	SWITCHING			R-PDSO-G2	.95 ohm		Not Qualified		.5 pF		.08 us	30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
BAR64-03WE6327	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SINGLE	S BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-PDSO-G2	20 ohm	1	Not Qualified	.25 W	.17 pF	HIGH VOLTAGE	1.55 us	200 V	e3		260	SILICON	100 MHz
BAR65-03WE6327	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE		.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	125 Cel	SWITCHING		MATTE TIN	R-PDSO-G2	.95 ohm	1	Not Qualified		.5 pF		.08 us	30 V	e3		260	SILICON	100 MHz
BAR6302WE6327XT	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	SWITCHING			R-PDSO-F2	2 ohm			.25 W			.075 us	50 V				SILICON
BAR64-02V	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	MEDIUM FREQUENCY TO C BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	20 V	SMALL OUTLINE	PIN Diodes	125 Cel	ATTENUATOR; SWITCHING	-55 Cel	TIN	R-PDSO-F2	1.35 ohm	1	Not Qualified	.25 W	.23 pF	LOW DISTORTION	1.55 us	150 V	e3			SILICON		AEC-Q101
BAR6503WE6327XT	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY	.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		125 Cel	SWITCHING	-55 Cel		R-PDSO-G2	.9 ohm			.25 W			.08 us	30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BAR63-02W	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	5 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING			R-PDSO-F2	2 ohm	1	Not Qualified	.25 W	.3 pF		.075 us	50 V				SILICON	100 MHz
BAR65-02L	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	5 mA	SINGLE		.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	CHIP CARRIER	PIN Diodes	125 Cel	SWITCHING		MATTE TIN	R-XBCC-N2	.9 ohm		Not Qualified	.25 W	.5 pF		.08 us	30 V	e3			SILICON	100 MHz
BAR65-02W	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE		.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			SWITCHING			R-PDSO-F2	.9 ohm		Not Qualified				.08 us	30 V				SILICON
BAR63-02V	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	5 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING		TIN	R-PDSO-F2	2 ohm	1	Not Qualified	.25 W	.21 pF		.075 us	50 V	e3			SILICON
BAR6402VE6327XTSA1	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	C BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		125 Cel	ATTENUATOR; SWITCHING	-55 Cel		R-PDSO-F2	1.35 ohm			.25 W			1.55 us	150 V		NOT SPECIFIED	NOT SPECIFIED	SILICON		AEC-Q101
BAR64-03WE6433	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SINGLE	S BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING			R-PDSO-G2	20 ohm		Not Qualified	.25 W	.17 pF	HIGH VOLTAGE	1.55 us	200 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
BAR63-03W	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	5 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING		TIN	R-PDSO-G2	2 ohm	1	Not Qualified	.25 W	.25 pF		.075 us	50 V	e3			SILICON
BAR65-02L-E6433	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE		.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	125 Cel					.95 ohm				.5 pF		.08 us	30 V				SILICON	100 MHz
BAR63-02L	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER	PIN Diodes	150 Cel	SWITCHING		GOLD	R-XBCC-N2	2 ohm	1	Not Qualified	.25 W	.3 pF		.075 us	50 V	e4			SILICON
BAR67-03W	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE		.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1	35 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	R-PDSO-G2	1.8 ohm		Not Qualified		.4 pF		.7 us	150 V	e0			SILICON
BAR64-02LRH	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	1 mA	SINGLE	MEDIUM FREQUENCY TO C BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	CHIP CARRIER	PIN Diodes	125 Cel	ATTENUATOR; SWITCHING	-55 Cel		R-XBCC-N2	1.35 ohm		Not Qualified	.25 W	.13 pF	LOW DISTORTION	1.55 us	150 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
BAR6302LE6327XTMA1	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		150 Cel	SWITCHING		GOLD	R-XBCC-N2	2 ohm	1		.25 W			.075 us	50 V	e4			SILICON
BAR65-02V	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE		.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1	3 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING		Matte Tin (Sn)	R-PDSO-F2	.9 ohm	1	Not Qualified	.25 W	.57 pF		.08 us	30 V	e3			SILICON
BAR64-02EL	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	MEDIUM FREQUENCY TO C BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		125 Cel	ATTENUATOR; SWITCHING	-55 Cel	GOLD	R-XBCC-N2	1.35 ohm	1		.25 W		LOW DISTORTION	1.55 us	150 V	e4			SILICON
BAR6302WH6327XTSA1	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	SWITCHING			R-PDSO-F2	2 ohm			.25 W			.075 us	50 V				SILICON
BAR6302WH6433TR	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	SWITCHING			R-PDSO-F2	2 ohm			.25 W			.075 us	50 V				SILICON
BAR6702VH6327XTSA1	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	L BAND	.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	ATTENUATOR; SWITCHING		TIN	R-PDSO-F2	1.8 ohm	1		.25 W			.7 us	150 V	e3			SILICON
BAR64-02W	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	MEDIUM FREQUENCY TO S BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	20 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	R-PDSO-F2	1.35 ohm		Not Qualified	.25 W	.35 pF	HIGH VOLTAGE	1.55 us	150 V	e0			SILICON
BAR64-03W	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	20 mA	SINGLE	MEDIUM FREQUENCY TO C BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	20 V	SMALL OUTLINE	PIN Diodes	125 Cel	ATTENUATOR; SWITCHING	-55 Cel	TIN	R-PDSO-G2	1.35 ohm	1	Not Qualified	.25 W	.35 pF	LOW DISTORTION	1.55 us	150 V	e3			SILICON		AEC-Q101
BAR65-03W	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE		.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1	3 V	SMALL OUTLINE	PIN Diodes	125 Cel	SWITCHING	-55 Cel	TIN	R-PDSO-G2	.9 ohm	1	Not Qualified	.25 W	.6 pF		.08 us	30 V	e3			SILICON	100 MHz
ISS371	Toshiba	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY		POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			SWITCHING		TIN LEAD	R-PDSO-G2	9 ohm		Not Qualified					30 V	e0			SILICON
JDP2S12CR(TE85L,QM	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	1.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	40 V	SMALL OUTLINE		175 Cel	SWITCHING			R-PDSO-F2	.7 ohm			1 W	1 pF	PD-CASE		180 V				SILICON	100 MHz
JDP2501E	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	ULTRA HIGH FREQUENCY	.8 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		125 Cel	ATTENUATOR			R-PDSO-F2	1 ohm		Not Qualified							NOT SPECIFIED	NOT SPECIFIED	SILICON
JDP2S02T	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.5 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	SMALL OUTLINE	PIN Diodes	125 Cel	ATTENUATOR		TIN LEAD	R-PDSO-F2	1.5 ohm		Not Qualified		.3 pF			30 V	e0			SILICON	100 MHz
JDP2S02S	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.5 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	ATTENUATOR		TIN LEAD	R-PDSO-F2	1.5 ohm		Not Qualified						e0			SILICON
1SV308	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY	.5 pF	POSITIVE-INTRINSIC-NEGATIVE	1	30 V	SMALL OUTLINE	PIN Diodes	125 Cel	SWITCHING			R-PDSO-F2	1.1 ohm		Not Qualified		.5 pF			30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	1500 MHz
JDP2S01AFS	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.8 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING		TIN LEAD	R-PDSO-F2	1 ohm		Not Qualified		.65 pF			30 V	e0			SILICON	100 MHz
JDP2S05SC	Toshiba	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		150 Cel	SWITCHING			R-XBCC-N2	2.2 ohm							20 V				SILICON
JDP2S12CR	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	ULTRA HIGH FREQUENCY	1.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		175 Cel	SWITCHING			R-PDSO-F2	.7 ohm		Not Qualified					180 V				SILICON
JDP2S01E	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	ULTRA HIGH FREQUENCY	.8 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	SMALL OUTLINE	PIN Diodes	125 Cel	ATTENUATOR		TIN LEAD	R-PDSO-F2	1 ohm		Not Qualified		.65 pF			30 V	e0			SILICON	100 MHz
JDP2S02AFS(TL3FMC)	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	SWITCHING			R-PDSO-F2	1.5 ohm							30 V				SILICON
JDP2S01T	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA				POSITIVE-INTRINSIC-NEGATIVE		1 V	SMALL OUTLINE	PIN Diodes	125 Cel			TIN LEAD	R-PDSO-F2	1 ohm		Not Qualified		.65 pF			30 V	e0			SILICON	100 MHz
ISS314	Toshiba	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY		POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			SWITCHING		TIN LEAD	R-PDSO-G2	.9 ohm		Not Qualified					30 V	e0			SILICON
JDP2S02AFS	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING			R-PDSO-F2	1.5 ohm		Not Qualified		.3 pF			30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
JDP2S02AFS(TL3HIKI	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	SWITCHING			R-PDSO-F2	1.5 ohm							30 V				SILICON
JDP2S05FS	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.42 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING		TIN LEAD	R-PDSO-F2	2.2 ohm		Not Qualified		.32 pF			20 V	e0			SILICON	100 MHz
JDP2S10U	Toshiba	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	1 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		125 Cel	ATTENUATOR			R-PDSO-G2	5 ohm		Not Qualified									SILICON
ISS238	Toshiba	PIN DIODE		THROUGH-HOLE	2	NO	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY	38 pF	POSITIVE-INTRINSIC-NEGATIVE	1		IN-LINE			SWITCHING				.9 ohm		Not Qualified					20 V				SILICON
JDP2S02ACT	Toshiba	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	10 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	CHIP CARRIER	PIN Diodes	150 Cel	SWITCHING			R-XBCC-N2	1.5 ohm		Not Qualified		.3 pF			30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
JDP2S04E	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	SMALL OUTLINE	PIN Diodes	125 Cel	ATTENUATOR			R-PDSO-F2			Not Qualified		.25 pF			50 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
ISS241	Toshiba	PIN DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY	38 pF	POSITIVE-INTRINSIC-NEGATIVE	1		IN-LINE			SWITCHING			R-PDIP-T2	.9 ohm		Not Qualified					30 V		NOT SPECIFIED	240	SILICON

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.