2 PIN Diodes 506
| Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Package Body Material | Diode Resistive Test Current | Config | Frequency Band | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Package Style (Meter) | Sub-Category | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Maximum Diode Forward Resistance | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | Nominal Minority Carrier Lifetime | JEDEC-95 Code | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Diode Resistive Test Frequency | Reference Standard |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
M/a-com Technology Solutions |
PIN DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
100 mA |
SINGLE |
S BAND |
.22 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
50 V |
SMALL OUTLINE |
175 Cel |
SWITCHING |
R-PDSO-N2 |
.8 ohm |
.17 pF |
.65 us |
200 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
500 MHz |
||||||||||||||||
|
Microchip Technology |
PIN DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
UNSPECIFIED |
SINGLE |
MEDIUM FREQUENCY |
10 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
50 V |
LONG FORM |
PIN Diodes |
175 Cel |
-55 Cel |
TIN LEAD |
E-XALF-W2 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
2 us |
100 V |
e0 |
SILICON |
|||||||||||||||||
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
VERY HIGH FREQUENCY |
1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
CYLINDRICAL |
125 Cel |
SWITCHING |
TIN LEAD |
O-PBCY-T2 |
1 ohm |
Not Qualified |
.28 W |
TO-92 |
200 V |
e0 |
SILICON |
|||||||||||||||||||
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
VERY HIGH FREQUENCY |
2 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
CYLINDRICAL |
125 Cel |
SWITCHING |
TIN LEAD |
O-PBCY-T2 |
.85 ohm |
Not Qualified |
.4 W |
TO-92 |
20 V |
e0 |
SILICON |
|||||||||||||||||||
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
10 mA |
SINGLE |
VERY HIGH FREQUENCY |
2 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
15 V |
CYLINDRICAL |
PIN Diodes |
125 Cel |
SWITCHING |
TIN LEAD |
O-PBCY-T2 |
.85 ohm |
Not Qualified |
.4 W |
1.3 pF |
TO-92 |
20 V |
e0 |
235 |
SILICON |
||||||||||||||
|
|
Onsemi |
PIN DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
HIGH FREQUENCY |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
0 V |
SMALL OUTLINE |
150 Cel |
ATTENUATOR; SWITCHING |
-55 Cel |
NICKEL PALLADIUM GOLD |
R-PDSO-N2 |
1 |
.33 pF |
80 V |
e4 |
30 |
260 |
SILICON |
AEC-Q101 |
||||||||||||||||
|
|
Onsemi |
PIN DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
HIGH FREQUENCY |
.23 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
50 V |
CHIP CARRIER |
125 Cel |
ATTENUATOR; SWITCHING |
-55 Cel |
R-PBCC-N2 |
2 ohm |
.23 pF |
50 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
1 MHz |
|||||||||||||||||
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
VERY HIGH FREQUENCY |
1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
CYLINDRICAL |
125 Cel |
SWITCHING |
TIN LEAD |
O-PBCY-T2 |
1 ohm |
Not Qualified |
.28 W |
EUROPEAN PART NUMBER |
TO-92 |
200 V |
e0 |
SILICON |
||||||||||||||||||
|
|
Onsemi |
PIN DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
HIGH FREQUENCY |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
0 V |
CHIP CARRIER |
150 Cel |
ATTENUATOR; SWITCHING |
-55 Cel |
NICKEL PALLADIUM GOLD |
R-PBCC-N2 |
1 |
.33 pF |
80 V |
e4 |
30 |
260 |
SILICON |
|||||||||||||||||
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
VERY HIGH FREQUENCY |
1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
CYLINDRICAL |
125 Cel |
SWITCHING |
TIN LEAD |
O-PBCY-T2 |
1 ohm |
Not Qualified |
.28 W |
TO-92 |
200 V |
e0 |
SILICON |
|||||||||||||||||||
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
VERY HIGH FREQUENCY |
1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
CYLINDRICAL |
125 Cel |
SWITCHING |
TIN LEAD |
O-PBCY-T2 |
1 ohm |
Not Qualified |
.28 W |
EUROPEAN PART NUMBER |
TO-92 |
200 V |
e0 |
SILICON |
||||||||||||||||||
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
10 mA |
SINGLE |
VERY HIGH FREQUENCY |
2 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
15 V |
CYLINDRICAL |
PIN Diodes |
125 Cel |
SWITCHING |
TIN LEAD |
O-PBCY-T2 |
.85 ohm |
Not Qualified |
.4 W |
1.3 pF |
HIGH VOLTAGE |
TO-92 |
20 V |
e0 |
235 |
SILICON |
|||||||||||||
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
VERY HIGH FREQUENCY |
2 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
CYLINDRICAL |
125 Cel |
SWITCHING |
TIN LEAD |
O-PBCY-T2 |
.85 ohm |
Not Qualified |
.4 W |
TO-92 |
20 V |
e0 |
SILICON |
|||||||||||||||||||
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
VERY HIGH FREQUENCY |
1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
CYLINDRICAL |
125 Cel |
SWITCHING |
TIN LEAD |
O-PBCY-T2 |
1 ohm |
Not Qualified |
.28 W |
EUROPEAN PART NUMBER |
TO-92 |
200 V |
e0 |
SILICON |
||||||||||||||||||
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
VERY HIGH FREQUENCY |
2 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
CYLINDRICAL |
125 Cel |
SWITCHING |
TIN LEAD |
O-PBCY-T2 |
.85 ohm |
Not Qualified |
.4 W |
TO-92 |
20 V |
e0 |
SILICON |
|||||||||||||||||||
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
VERY HIGH FREQUENCY |
2 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
CYLINDRICAL |
125 Cel |
SWITCHING |
TIN LEAD |
O-PBCY-T2 |
.85 ohm |
Not Qualified |
.4 W |
EUROPEAN PART NUMBER |
TO-92 |
20 V |
e0 |
SILICON |
||||||||||||||||||
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
VERY HIGH FREQUENCY |
1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
CYLINDRICAL |
125 Cel |
SWITCHING |
TIN LEAD |
O-PBCY-T2 |
1 ohm |
Not Qualified |
.28 W |
TO-92 |
200 V |
e0 |
SILICON |
|||||||||||||||||||
|
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
10 mA |
SINGLE |
VERY HIGH FREQUENCY |
1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
20 V |
CYLINDRICAL |
PIN Diodes |
125 Cel |
SWITCHING |
TIN SILVER COPPER |
O-PBCY-T2 |
1 ohm |
Not Qualified |
.28 W |
1 pF |
HIGH VOLTAGE |
TO-92 |
200 V |
e1 |
260 |
SILICON |
||||||||||||
|
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
10 mA |
SINGLE |
VERY HIGH FREQUENCY |
2 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
15 V |
CYLINDRICAL |
PIN Diodes |
125 Cel |
SWITCHING |
TIN SILVER COPPER |
O-PBCY-T2 |
.85 ohm |
Not Qualified |
.4 W |
1.3 pF |
HIGH VOLTAGE |
TO-92 |
20 V |
e1 |
260 |
SILICON |
||||||||||||
|
Onsemi |
PIN DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
10 mA |
SINGLE |
VERY HIGH FREQUENCY |
1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
SWITCHING |
Tin/Lead (Sn/Pb) |
R-PDSO-G2 |
1 ohm |
1 |
Not Qualified |
.2 W |
HIGH VOLTAGE |
200 V |
e0 |
30 |
235 |
SILICON |
||||||||||||||
|
|
Onsemi |
PIN DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
10 mA |
SINGLE |
VERY HIGH FREQUENCY |
1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
SWITCHING |
TIN |
R-PDSO-G2 |
.7 ohm |
1 |
Not Qualified |
.2 W |
35 V |
e3 |
30 |
260 |
SILICON |
100 MHz |
|||||||||||||
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
VERY HIGH FREQUENCY |
2 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
CYLINDRICAL |
125 Cel |
SWITCHING |
TIN LEAD |
O-PBCY-T2 |
.85 ohm |
Not Qualified |
.4 W |
EUROPEAN PART NUMBER |
TO-92 |
20 V |
e0 |
SILICON |
||||||||||||||||||
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
10 mA |
SINGLE |
VERY HIGH FREQUENCY |
1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
20 V |
CYLINDRICAL |
PIN Diodes |
125 Cel |
SWITCHING |
TIN LEAD |
O-PBCY-T2 |
1 ohm |
Not Qualified |
.28 W |
1 pF |
HIGH VOLTAGE |
TO-92 |
200 V |
e0 |
235 |
SILICON |
|||||||||||||
|
|
Onsemi |
PIN DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
HIGH FREQUENCY |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
80 V |
SMALL OUTLINE |
150 Cel |
ATTENUATOR; SWITCHING |
-55 Cel |
NICKEL PALLADIUM GOLD |
R-PDSO-N2 |
1 |
.33 pF |
e4 |
30 |
260 |
SILICON |
||||||||||||||||||
|
|
Onsemi |
PIN DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
HIGH FREQUENCY |
.23 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
50 V |
SMALL OUTLINE |
125 Cel |
ATTENUATOR; SWITCHING |
-55 Cel |
R-PDSO-N2 |
2 ohm |
.23 pF |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
1 MHz |
||||||||||||||||||
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
VERY HIGH FREQUENCY |
1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
CYLINDRICAL |
125 Cel |
SWITCHING |
TIN LEAD |
O-PBCY-T2 |
1 ohm |
Not Qualified |
.28 W |
TO-92 |
200 V |
e0 |
SILICON |
|||||||||||||||||||
|
|
Onsemi |
PIN DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
10 mA |
SINGLE |
VERY HIGH FREQUENCY |
1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
SWITCHING |
TIN |
R-PDSO-G2 |
1 ohm |
1 |
Not Qualified |
.2 W |
HIGH VOLTAGE |
200 V |
e3 |
30 |
260 |
SILICON |
|||||||||||||
|
Onsemi |
PIN DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
10 mA |
SINGLE |
VERY HIGH FREQUENCY |
1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
SWITCHING |
Tin/Lead (Sn/Pb) |
R-PDSO-G2 |
.7 ohm |
1 |
Not Qualified |
.2 W |
35 V |
e0 |
30 |
235 |
SILICON |
100 MHz |
||||||||||||||
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
VERY HIGH FREQUENCY |
2 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
CYLINDRICAL |
125 Cel |
SWITCHING |
TIN LEAD |
O-PBCY-T2 |
.85 ohm |
Not Qualified |
.4 W |
EUROPEAN PART NUMBER |
TO-92 |
20 V |
e0 |
SILICON |
||||||||||||||||||
|
|
STMicroelectronics |
PIN DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
.3 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
0 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
SWITCHING |
MATTE TIN |
R-PDSO-C2 |
2 ohm |
Not Qualified |
.25 W |
.4 pF |
.125 us |
50 V |
e3 |
SILICON |
100 MHz |
||||||||||||||
|
NXP Semiconductors |
PIN DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
VERY HIGH FREQUENCY |
1.1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
SMALL OUTLINE |
SWITCHING |
R-PDSO-G2 |
.7 ohm |
Not Qualified |
35 V |
SILICON |
||||||||||||||||||||||||
|
NXP Semiconductors |
PIN DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
LOW FREQUENCY |
12 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
LONG FORM |
ATTENUATOR |
O-LALF-W2 |
10 ohm |
ISOLATED |
Not Qualified |
LOW LEAKAGE, LOW DISTORTION |
20 us |
SILICON |
||||||||||||||||||||||
|
|
NXP Semiconductors |
PIN DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
S BAND |
.32 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
SMALL OUTLINE |
ATTENUATOR; SWITCHING |
TIN |
R-PDSO-F2 |
2 ohm |
1 |
Not Qualified |
.715 W |
.31 us |
175 V |
e3 |
SILICON |
||||||||||||||||||
|
|
NXP Semiconductors |
PIN DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
.5 mA |
SINGLE |
.25 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
0 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
ATTENUATOR |
-65 Cel |
Tin (Sn) |
R-PDSO-G2 |
1.9 ohm |
1 |
Not Qualified |
.5 W |
.57 pF |
HIGH VOLTAGE |
1.25 us |
50 V |
e3 |
30 |
260 |
SILICON |
100 MHz |
|||||||||
|
|
NXP Semiconductors |
PIN DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.9 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
SMALL OUTLINE |
150 Cel |
ATTENUATOR; SWITCHING |
-65 Cel |
TIN |
R-PDSO-F2 |
.9 ohm |
1 |
Not Qualified |
.715 W |
.17 us |
30 V |
e3 |
30 |
260 |
SILICON |
|||||||||||||||
|
NXP Semiconductors |
PIN DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
.5 mA |
SINGLE |
S BAND |
.32 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
20 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
ATTENUATOR; SWITCHING |
R-PDSO-F2 |
1.3 ohm |
Not Qualified |
.315 W |
.22 pF |
.5 us |
60 V |
SILICON |
100 MHz |
||||||||||||||||
|
|
NXP Semiconductors |
PIN DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
S BAND |
.45 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
SMALL OUTLINE |
ATTENUATOR; SWITCHING |
TIN |
R-PDSO-G2 |
1.3 ohm |
1 |
Not Qualified |
.5 W |
.5 us |
100 V |
e3 |
SILICON |
||||||||||||||||||
|
|
NXP Semiconductors |
PIN DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
.5 mA |
SINGLE |
S BAND |
.26 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
0 V |
CHIP CARRIER |
PIN Diodes |
150 Cel |
ATTENUATOR; SWITCHING |
-65 Cel |
Tin (Sn) |
R-PBCC-N2 |
1.3 ohm |
1 |
Not Qualified |
.13 W |
.25 pF |
.11 us |
50 V |
e3 |
30 |
260 |
SILICON |
100 MHz |
|||||||||
|
|
NXP Semiconductors |
PIN DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
S BAND |
.45 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
SMALL OUTLINE |
ATTENUATOR; SWITCHING |
TIN |
R-PDSO-F2 |
1.3 ohm |
1 |
Not Qualified |
.715 W |
.5 us |
e3 |
SILICON |
|||||||||||||||||||
|
|
NXP Semiconductors |
PIN DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.25 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
SMALL OUTLINE |
150 Cel |
ATTENUATOR |
-65 Cel |
TIN |
R-PDSO-G2 |
7 ohm |
1 |
Not Qualified |
.5 W |
1.25 us |
70 V |
e3 |
SILICON |
|||||||||||||||||
|
|
NXP Semiconductors |
PIN DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
.5 mA |
SINGLE |
.25 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
0 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
ATTENUATOR |
-65 Cel |
TIN |
R-PDSO-G2 |
1.9 ohm |
1 |
Not Qualified |
.5 W |
.57 pF |
HIGH VOLTAGE |
1.25 us |
50 V |
e3 |
30 |
260 |
SILICON |
100 MHz |
|||||||||
|
|
NXP Semiconductors |
PIN DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
.5 mA |
SINGLE |
S BAND |
.45 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
0 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
ATTENUATOR; SWITCHING |
-65 Cel |
TIN |
R-PDSO-G2 |
1.3 ohm |
1 |
Not Qualified |
.5 W |
.4 pF |
.5 us |
60 V |
e3 |
30 |
260 |
SILICON |
100 MHz |
|||||||||
|
|
NXP Semiconductors |
PIN DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.55 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
SMALL OUTLINE |
Tin (Sn) |
R-PDSO-F2 |
5 ohm |
1 |
Not Qualified |
.715 W |
1.05 us |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||
|
NXP Semiconductors |
PIN DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
.5 mA |
SINGLE |
S BAND |
.45 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
20 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
ATTENUATOR; SWITCHING |
R-PDSO-F2 |
.95 ohm |
Not Qualified |
.315 W |
.27 pF |
.17 us |
50 V |
SILICON |
100 MHz |
||||||||||||||||
|
|
NXP Semiconductors |
PIN DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.9 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
SMALL OUTLINE |
ATTENUATOR; SWITCHING |
TIN |
R-PDSO-G2 |
.9 ohm |
1 |
Not Qualified |
.5 W |
.17 us |
30 V |
e3 |
SILICON |
|||||||||||||||||||
|
NXP Semiconductors |
PIN DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.9 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
SMALL OUTLINE |
ATTENUATOR; SWITCHING |
R-PDSO-F2 |
.9 ohm |
Not Qualified |
.315 W |
.17 us |
30 V |
SILICON |
|||||||||||||||||||||||
|
NXP Semiconductors |
PIN DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
LOW FREQUENCY |
6 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
SMALL OUTLINE |
ATTENUATOR |
R-PDSO-C2 |
10 ohm |
Not Qualified |
25 us |
DO-214AC |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||
|
|
NXP Semiconductors |
PIN DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.9 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
SMALL OUTLINE |
150 Cel |
ATTENUATOR; SWITCHING |
-65 Cel |
TIN |
R-PDSO-F2 |
.9 ohm |
1 |
Not Qualified |
.715 W |
.17 us |
30 V |
e3 |
30 |
260 |
SILICON |
PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.
PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.
PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.
PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.