2 PIN Diodes 506

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Diode Capacitance	Technology	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	JEDEC-95 Code	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency	Reference Standard
BAP142LX	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.26 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PBCC-N2	1.3 ohm	1		Not Qualified	.13 W			.11 us			e3	30	260	SILICON
934056820315	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.32 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			ATTENUATOR; SWITCHING			R-PDSO-F2	1.17 ohm			Not Qualified	.315 W			.3 us		50 V				SILICON
934056619115	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE		.25 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	ATTENUATOR	-65 Cel	Tin (Sn)	R-PDSO-F2	7 ohm	1		Not Qualified	.415 W			1.25 us		70 V	e3	30	260	SILICON
BAQ800T/R	NXP Semiconductors	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE	LOW FREQUENCY	12 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM			ATTENUATOR			O-LALF-W2	10 ohm		ISOLATED	Not Qualified			LOW LEAKAGE, LOW DISTORTION	20 us						SILICON
934056821315	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.32 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			ATTENUATOR; SWITCHING			R-PDSO-F2	1.3 ohm			Not Qualified	.315 W			.5 us				NOT SPECIFIED	NOT SPECIFIED	SILICON
934055511115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			ATTENUATOR; SWITCHING		TIN	R-PDSO-G2	1.35 ohm	1		Not Qualified	.5 W			1.55 us			e3			SILICON
BAP1321LX,315	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.38 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	CHIP CARRIER	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel		R-PBCC-N2	1.3 ohm			Not Qualified	.13 W	.32 pF		.48 us		60 V				SILICON	100 MHz
934055889115	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE		.55 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE					Tin (Sn)	R-PDSO-F2	2.5 ohm	1		Not Qualified	.715 W					60 V	e3	30	260	SILICON
BAP1321-02T/R	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-F2	1.3 ohm			Not Qualified	.715 W	.4 pF	HIGH VOLTAGE	.5 us		60 V	e3			SILICON	100 MHz
934055509115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE		.55 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE					TIN	R-PDSO-G2	2.5 ohm	1		Not Qualified	.5 W			.55 us			e3			SILICON
934056953315	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			ATTENUATOR; SWITCHING			R-PDSO-F2	.95 ohm			Not Qualified	.315 W			.17 us		50 V				SILICON
BAP70-02,115	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE		.25 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR	-65 Cel	TIN	R-PDSO-F2	1.9 ohm	1		Not Qualified	.415 W	.57 pF	HIGH VOLTAGE	1.25 us		50 V	e3	30	260	SILICON	100 MHz
934050600133	NXP Semiconductors	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE	LOW FREQUENCY	6 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM			ATTENUATOR			O-LALF-W2	10 ohm		ISOLATED	Not Qualified				25 us						SILICON
BAP1321-03	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PDSO-G2	1.3 ohm	1		Not Qualified	.5 W	.4 pF		.5 us		60 V	e3	30	260	SILICON	100 MHz
934055512115	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			ATTENUATOR; SWITCHING		Tin (Sn)	R-PDSO-F2	1.35 ohm	1		Not Qualified	.715 W			1.55 us			e3	30	260	SILICON
BAP70-02	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE		.25 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR	-65 Cel	Tin (Sn)	R-PDSO-F2	1.9 ohm	1		Not Qualified	.415 W	.57 pF	HIGH VOLTAGE	1.25 us		50 V	e3	30	260	SILICON	100 MHz
BAQ806,115	NXP Semiconductors	PIN DIODE	DUAL	C BEND	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	LOW FREQUENCY	11 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			ATTENUATOR			R-PDSO-C2	10 ohm						LOW DISTORTION	25 us	DO-214AC					SILICON
934055520135	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE		.55 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel		-65 Cel	TIN	R-PDSO-G2	5 ohm	1		Not Qualified	.5 W						e3			SILICON
934051250135	NXP Semiconductors	PIN DIODE	DUAL	C BEND	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	LOW FREQUENCY	6 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			ATTENUATOR			R-PDSO-C2	10 ohm			Not Qualified				25 us	DO-214AC			NOT SPECIFIED	NOT SPECIFIED	SILICON
934050600113	NXP Semiconductors	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE	LOW FREQUENCY	6 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM			ATTENUATOR			O-LALF-W2	10 ohm		ISOLATED	Not Qualified				25 us						SILICON
BAP1321LX	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.38 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PBCC-N2	1.3 ohm			Not Qualified	.13 W			.48 us			e3			SILICON
BAP142L	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER			ATTENUATOR; SWITCHING			R-PBCC-N2	.9 ohm			Not Qualified	.315 W			.12 us						SILICON
BAQ806/T3	NXP Semiconductors	PIN DIODE	DUAL	C BEND	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	LOW FREQUENCY	11 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			ATTENUATOR			R-PDSO-C2	10 ohm			Not Qualified			LOW DISTORTION	25 us	DO-214AC					SILICON
934055520115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE		.55 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel		-65 Cel	TIN	R-PDSO-G2	5 ohm	1		Not Qualified	.5 W						e3			SILICON
BAP1321-03T/R	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G2	1.3 ohm			Not Qualified	.5 W			.5 us			e3			SILICON
934056542115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.32 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			ATTENUATOR; SWITCHING		TIN	R-PDSO-G2	2 ohm	1		Not Qualified	.5 W			1.55 us		175 V	e3			SILICON
BAP1321-02,115	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-F2	1.3 ohm			Not Qualified	.715 W	.4 pF	HIGH VOLTAGE	.5 us		60 V	e3	30	260	SILICON	100 MHz
BAQ806T/R	NXP Semiconductors	PIN DIODE	DUAL	C BEND	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	LOW FREQUENCY	11 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			ATTENUATOR			R-PDSO-C2	10 ohm			Not Qualified			LOW DISTORTION	25 us	DO-214AC					SILICON
BAQ806	NXP Semiconductors	PIN DIODE	DUAL	C BEND	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	LOW FREQUENCY	11 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR			R-PDSO-C2	10 ohm			Not Qualified		9 pF	LOW DISTORTION	25 us	DO-214AC	100 V				SILICON
BAP1321-02	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PDSO-F2	1.3 ohm	1		Not Qualified	.715 W	.4 pF	HIGH VOLTAGE	.5 us		60 V	e3	30	260	SILICON	100 MHz
BAP63-03,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.32 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G2	1.5 ohm			Not Qualified	.5 W	.4 pF		.31 us		50 V	e3	30	260	SILICON	100 MHz
BAP51-03	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE		.55 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	SMALL OUTLINE	PIN Diodes	150 Cel		-65 Cel	Tin (Sn)	R-PDSO-G2	2.5 ohm	1		Not Qualified	.5 W	.55 pF		.55 us		60 V	e3	30	260	SILICON	100 MHz
BAP63LX,315	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	CHIP CARRIER	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PBCC-N2	1.5 ohm			Not Qualified	.135 W	.34 pF		.32 us		50 V	e3			SILICON	100 MHz
BAP63-01	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.32 pF	POSITIVE-INTRINSIC-NEGATIVE	1	20 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING			R-PDSO-F2	1.5 ohm			Not Qualified	.315 W	.24 pF		.3 us		50 V				SILICON	100 MHz
BAP64-03/DG/B2/AX	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel		R-PDSO-G2	1.35 ohm				.5 W	.48 pF	HIGH VOLTAGE	1.55 us		175 V				SILICON	100 MHz	IEC-60134
BAP51L	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	500 mA	SINGLE	S BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	CHIP CARRIER	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING			R-PBCC-N2	1.5 ohm			Not Qualified	.5 W	.23 pF		.55 us		60 V				SILICON	100 MHz
BAP50-02,115	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE		.55 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel		-65 Cel	TIN	R-PDSO-F2	5 ohm	1		Not Qualified	.715 W	.4 pF	HIGH VOLTAGE	1.05 us		50 V	e3	30	260	SILICON	100 MHz
BAP65-03	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE		.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G2	.9 ohm	1		Not Qualified	.5 W	.65 pF		.17 us		30 V	e3	30	260	SILICON	100 MHz
BAP51-02	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE		.55 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	SMALL OUTLINE	PIN Diodes	150 Cel		-65 Cel	Tin (Sn)	R-PDSO-F2	2.5 ohm	1		Not Qualified	.715 W	.55 pF				60 V	e3	30	260	SILICON	100 MHz
BAP63-02T/R	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.32 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-F2	1.5 ohm			Not Qualified	.715 W	.36 pF		.31 us		50 V	e3			SILICON	100 MHz
BAP51LX,315	NXP Semiconductors	PIN DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	500 mA	SINGLE	S BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PDSO-N2	1.5 ohm	1		Not Qualified	.14 W	.3 pF		.55 us		60 V	e3	30	260	SILICON	100 MHz
BAP50-02T/R	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE		.55 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel		-65 Cel	TIN	R-PDSO-F2	5 ohm			Not Qualified	.715 W	.4 pF	HIGH VOLTAGE	1.05 us		50 V	e3			SILICON	100 MHz
BAP64LX,315	NXP Semiconductors	PIN DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	20 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-N2	1.5 ohm	1		Not Qualified	.15 W	.3 pF		1 us		60 V	e3	30	260	SILICON	100 MHz
BAP50LX,315	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.55 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	CHIP CARRIER	PIN Diodes	150 Cel		-65 Cel	Tin (Sn)	R-PBCC-N2	5 ohm	1		Not Qualified	.15 W	.4 pF		1 us		50 V	e3	30	260	SILICON	100 MHz
BAP51-02T/R	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE		.55 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel		-65 Cel	TIN	R-PDSO-F2	2.5 ohm			Not Qualified	.715 W	.4 pF				60 V	e3			SILICON	100 MHz
BAP55L,315	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.28 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER			ATTENUATOR; SWITCHING		TIN	R-PBCC-N2	.7 ohm			Not Qualified	.5 W			.28 us			e3			SILICON
BAP64-03T/R	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G2	1.35 ohm			Not Qualified	.5 W		HIGH VOLTAGE	1.55 us			e3			SILICON
BAP65LX	NXP Semiconductors	PIN DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE		.85 pF	POSITIVE-INTRINSIC-NEGATIVE	1	20 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PDSO-N2	.9 ohm	1		Not Qualified	.135 W	.37 pF		.18 us		30 V	e3	30	260	SILICON	100 MHz

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.