2 PIN Diodes 506

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Forward Voltage (VF)	Maximum Diode Capacitance	Technology	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency	Reference Standard
BAP50-03T/R	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE			.55 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			150 Cel		-65 Cel	TIN	R-PDSO-G2	5 ohm			Not Qualified	.5 W					e3			SILICON
BAP64-03	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PDSO-G2	1.35 ohm	1		Not Qualified	.5 W	.52 pF	HIGH VOLTAGE	1.55 us	175 V	e3	30	260	SILICON	100 MHz
BAP55L	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.28 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	CHIP CARRIER	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING			R-PBCC-N2	.7 ohm			Not Qualified	.5 W	.27 pF		.28 us	50 V				SILICON	100 MHz
BAP64-02T/R	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-F2	1.35 ohm			Not Qualified	.715 W	.48 pF	HIGH VOLTAGE	1.55 us	175 V	e3			SILICON	100 MHz
BAP64-02	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PDSO-F2	1.35 ohm	1		Not Qualified	.715 W	.52 pF	HIGH VOLTAGE	1.55 us	175 V	e3	30	260	SILICON	100 MHz
BAP65-02T/R	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE			.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-F2	.9 ohm	1		Not Qualified	.715 W	.65 pF	HIGH VOLTAGE	.17 us	30 V	e3	30	260	SILICON	100 MHz
BAP65-02	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE			.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-F2	.9 ohm	1		Not Qualified	.715 W	.65 pF	HIGH VOLTAGE	.17 us	30 V	e3	30	260	SILICON	100 MHz
BAP50LX	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND		.55 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER			150 Cel		-65 Cel	TIN	R-PBCC-N2	5 ohm			Not Qualified	.15 W			1 us		e3	30	260	SILICON
BAP65-01	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE			.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1	20 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING			R-PDSO-F2	.9 ohm			Not Qualified	.315 W	.375 pF		.17 us	30 V				SILICON	100 MHz
BAP51-03T/R	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE			.55 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			150 Cel		-65 Cel	TIN	R-PDSO-G2	2.5 ohm			Not Qualified	.5 W			.55 us		e3			SILICON
BAP63-03T/R	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND		.32 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G2	1.5 ohm			Not Qualified	.5 W			.31 us	50 V	e3			SILICON
BAP50-02	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE			.55 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel		-65 Cel	Tin (Sn)	R-PDSO-F2	5 ohm	1		Not Qualified	.715 W	.4 pF	HIGH VOLTAGE	1.05 us	50 V	e3	30	260	SILICON	100 MHz
BAP51LX	NXP Semiconductors	PIN DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-N2	1.5 ohm			Not Qualified	.14 W			.55 us		e3	30	260	SILICON
BAP55LX,315	NXP Semiconductors	PIN DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.28 pF	POSITIVE-INTRINSIC-NEGATIVE	1	20 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-N2	4.5 ohm	1		Not Qualified	.135 W	.28 pF		.27 us	50 V	e3	30	260	SILICON	100 MHz
BAP65-03T/R	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE			.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G2	.9 ohm			Not Qualified	.5 W			.17 us	30 V	e3			SILICON
BAP63-03	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.32 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PDSO-G2	1.5 ohm	1		Not Qualified	.5 W	.4 pF		.31 us	50 V	e3	30	260	SILICON	100 MHz
BAP51L,315	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER				ATTENUATOR; SWITCHING		TIN	R-PBCC-N2	1.5 ohm			Not Qualified	.5 W			.55 us	60 V	e3			SILICON
BAP63LX	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	CHIP CARRIER	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PBCC-N2	1.5 ohm			Not Qualified	.135 W	.34 pF		.32 us	50 V	e3			SILICON	100 MHz
BAP55LX	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND		.28 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER				ATTENUATOR; SWITCHING		Tin (Sn)	R-PBCC-N2	.8 ohm	1		Not Qualified	.135 W			.27 us		e3	30	260	SILICON
BAP64LX	NXP Semiconductors	PIN DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PDSO-N2	1.5 ohm	1		Not Qualified	.15 W			1 us		e3	30	260	SILICON
BAP50-03	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE			.55 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	SMALL OUTLINE	PIN Diodes		150 Cel		-65 Cel	Tin (Sn)	R-PDSO-G2	5 ohm	1		Not Qualified	.5 W	.55 pF			50 V	e3	30	260	SILICON	100 MHz
BAP63-02,115	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.32 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-F2	1.5 ohm			Not Qualified	.715 W	.36 pF		.31 us	50 V	e3	30	260	SILICON	100 MHz
BAP65LX,315	NXP Semiconductors	PIN DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE			.85 pF	POSITIVE-INTRINSIC-NEGATIVE	1	20 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-N2	.9 ohm	1		Not Qualified	.135 W	.37 pF		.18 us	30 V	e3	30	260	SILICON	100 MHz
BAP63-02	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.32 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PDSO-F2	1.5 ohm	1		Not Qualified	.715 W	.36 pF		.31 us	50 V	e3	30	260	SILICON	100 MHz
BAR50-02L	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	HIGH FREQUENCY TO C BAND		.5 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	CHIP CARRIER	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-XBCC-N2	4.5 ohm			Not Qualified	.25 W	.1 pF	LOW DISTORTION	1.1 us	50 V	e3			SILICON
BXY43-TP	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE			.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	1.5 ohm		ISOLATED	Not Qualified	.5 W	.3 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz
BA895	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	MEDIUM FREQUENCY TO L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	10 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING			R-PDSO-F2	7 ohm	1		Not Qualified		.23 pF		1.6 us	50 V				SILICON
BXY44-T2P	Infineon Technologies	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CEMW-N2	5 ohm			Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us	200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY43-TES	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE			.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	1.5 ohm		ISOLATED	Not Qualified	.5 W	.3 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BA585E6433	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	MEDIUM FREQUENCY TO L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE				ATTENUATOR; SWITCHING			R-PDSO-G2	40 ohm			Not Qualified					50 V				SILICON
BA597E6327	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY		.32 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE				ATTENUATOR; SWITCHING			R-PDSO-G2	4.5 ohm			Not Qualified	.25 W			2.5 us	50 V				SILICON
BAR50-02V	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY TO C BAND		.5 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		Matte Tin (Sn)	R-PDSO-F2	4.5 ohm	1		Not Qualified	.25 W	.3 pF	LOW DISTORTION	1.1 us	50 V	e3			SILICON
BXY44-TES	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	5 ohm		ISOLATED	Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us	200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BAR50-02LE6327TR	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	HIGH FREQUENCY TO C BAND		.5 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER			150 Cel	ATTENUATOR; SWITCHING			R-XBCC-N2	4.5 ohm				.25 W		LOW DISTORTION	1.1 us			NOT SPECIFIED	NOT SPECIFIED	SILICON
BAR90-02LRH	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND	.87 V	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER	Rectifier Diodes	80 V	150 Cel	SWITCHING			R-XBCC-N2	2.3 ohm			Not Qualified	.25 W			.75 us	80 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BAR88-02VH6327	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SINGLE	ULTRA HIGH FREQUENCY		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING	-55 Cel	MATTE TIN	R-PDSO-F2	2.5 ohm	1			.25 W	.25 pF		.5 us	80 V	e3		260	SILICON	100 MHz
BAR9002LSE6327XTSA1	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER			150 Cel	SWITCHING			R-XBCC-N2	2.3 ohm				.15 W			.75 us	80 V				SILICON
BXY42-TS	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.24 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes		175 Cel	SWITCHING		MATTE TIN	O-CELF-R2	2.5 ohm		ISOLATED	Not Qualified	.6 W	.24 pF	HIGH RELIABILITY	.05 us	50 V	e3			SILICON	100 MHz
BXY43-P1S	Infineon Technologies	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE			.75 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CEMW-N2	1.5 ohm			Not Qualified	.5 W	.5 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz
BXY42-T1(P)	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.24 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes		175 Cel	SWITCHING		MATTE TIN	O-CXMW-G2	2.5 ohm			Not Qualified	.35 W	.24 pF	HIGH RELIABILITY	.05 us	50 V	e3			SILICON	100 MHz
BXY42-TH	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.24 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes		175 Cel	SWITCHING		MATTE TIN	O-CELF-R2	2.5 ohm		ISOLATED	Not Qualified	.6 W	.24 pF	HIGH RELIABILITY	.05 us	50 V	e3			SILICON	100 MHz
BXY44-T1S	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CXMW-G2	5 ohm			Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us	200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY44-T2H	Infineon Technologies	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CEMW-N2	5 ohm			Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us	200 V	e3			SILICON		ESA-SCC-5513/030
BA895E6433	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	1.5 mA	SINGLE	MEDIUM FREQUENCY TO L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING			R-PDSO-F2	7 ohm			Not Qualified		.26 pF		1.6 us			NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
BAR88-02LRH	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	1 mA	SINGLE	L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING			R-XBCC-N2	2.5 ohm	1		Not Qualified	.25 W	.25 pF	LOW DISTORTION	.5 us	80 V				SILICON	100 MHz
BXY42BB-S	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE			.15 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE	PIN Diodes		175 Cel	SWITCHING			R-XDMW-F2				Not Qualified		.15 pF		.02 us	30 V				SILICON
BAR90-02ELS	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER			125 Cel	SWITCHING	-55 Cel	GOLD	R-XBCC-N2	2.3 ohm	1			.15 W			.75 us	80 V	e4			SILICON
BAR90-02LS	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND	.87 V	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER	Rectifier Diodes	80 V	150 Cel	SWITCHING			R-XBCC-N2	2.3 ohm			Not Qualified	.15 W			.75 us	80 V		NOT SPECIFIED	NOT SPECIFIED	SILICON

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.