NO Varactor Diodes 429

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Config	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Maximum Operating Temperature	Minimum Operating Temperature	JESD-30 Code	Case Connection	Qualification	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Diode Cap Tolerance	Minimum Breakdown Voltage	Diode Element Material	Minimum Diode Capacitance Ratio
BB909B153	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM	100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V	SILICON	12
BB204G-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			2		CYLINDRICAL			O-PBCY-T3		Not Qualified						SILICON	2.5
BB909A143	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM	100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V	SILICON	12
BB909A	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		LONG FORM			O-LALF-W2	ISOLATED	Not Qualified	23 pF	MATCHED TO 2.5%	DO-34			SILICON	12
BB417133	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM	100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified			DO-34		30 V	SILICON	2
BB130	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	PLASTIC/EPOXY	SINGLE		.05 uA	1	30 V	CYLINDRICAL	85 Cel		O-PBCY-T2		Not Qualified	450 pF	3% MATCHED SETS ARE AVAILABLE, 3% MATCHED SET OF TWO DIODES	TO-92		32 V	SILICON	23
BB910143	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM	100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V	SILICON	14
BB204B	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY	.05 uA	2	30 V	CYLINDRICAL	100 Cel		O-PBCY-T3		Not Qualified	14 pF		TO-92			SILICON	2.5
BB910-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM	100 Cel		O-LALF-W2	ISOLATED	Not Qualified		CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES			32 V	SILICON	14
BB212-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			2		CYLINDRICAL			O-PBCY-T3		Not Qualified						SILICON	22.5
BB909A-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM	100 Cel		O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE			32 V	SILICON	12
BB212	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		.05 uA	2	10 V	CYLINDRICAL	85 Cel		O-PBCY-T3		Not Qualified	500 pF		TO-92	3.5 %	12 V	SILICON	22.5
BB911-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM	100 Cel		O-LALF-W2	ISOLATED	Not Qualified		CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES			32 V	SILICON	21
BB909A153	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM	100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V	SILICON	12
BB809116	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM	100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		3% MATCHED SETS AVAILABLE	DO-34		30 V	SILICON	8
BB809136	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM	100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		3% MATCHED SETS AVAILABLE	DO-34		30 V	SILICON	8
BB909B	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		LONG FORM			O-LALF-W2	ISOLATED	Not Qualified	25 pF	MATCHED TO 2.5%	DO-34			SILICON	12
BB909B-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM	100 Cel		O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE			32 V	SILICON	12
BB911/A113	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	30 V	LONG FORM	100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V	SILICON	23.3
BB417153	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM	100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified			DO-34		30 V	SILICON	2
BB909A133	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM	100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V	SILICON	12
BB417	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY		1		LONG FORM			O-LALF-W2	ISOLATED	Not Qualified			DO-34			SILICON	2
BB911-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM	100 Cel		O-LALF-W2	ISOLATED	Not Qualified		CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES			32 V	SILICON	21
BB405B143	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM	100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		3% MATCHED SETS AVAILABLE	DO-34		30 V	SILICON	7.6
BB911/A	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY		1		LONG FORM			O-LALF-W2	ISOLATED	Not Qualified		MATCHED TO 2.5%	DO-34			SILICON	23.3
BB204G	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY	.05 uA	2	30 V	CYLINDRICAL	100 Cel		O-PBCY-T3		Not Qualified	14 pF		TO-92			SILICON	2.5
BB417-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		.1 uA	1	20 V	LONG FORM	100 Cel		O-LALF-W2	ISOLATED	Not Qualified						SILICON	2
BB119-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		2 uA	1	15 V	LONG FORM	200 Cel		O-LALF-W2	ISOLATED	Not Qualified						SILICON	1.3
BB911/A136	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	30 V	LONG FORM	100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V	SILICON	23.3
BB909B116	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM	100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V	SILICON	12
BB809143	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM	100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		3% MATCHED SETS AVAILABLE	DO-34		30 V	SILICON	8
BB112	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	PLASTIC/EPOXY	SINGLE		.05 uA	1	12 V	CYLINDRICAL	85 Cel		O-PBCY-T2		Not Qualified	440 pF	3% MATCHED SETS ARE AVAILABLE ,3% MATCHED SET OF THREE DIODES	TO-92			SILICON
BB405B136	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM	100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		3% MATCHED SETS AVAILABLE	DO-34		30 V	SILICON	7.6
BB119133	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		.05 uA	1	15 V	LONG FORM	150 Cel		O-LALF-W2	ISOLATED	Not Qualified			DO-35		15 V	SILICON	1.3
BB204B-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			2		CYLINDRICAL			O-PBCY-T3		Not Qualified						SILICON	2.5
BB809T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM	100 Cel		O-LALF-W2	ISOLATED	Not Qualified	39 pF	CAPACITANCE MATCHED TO 3% FOR ANY TWO DIODES	DO-34		30 V	SILICON	8
BB417113	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM	100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified			DO-34		30 V	SILICON	2
BB405B133	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM	100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		3% MATCHED SETS AVAILABLE	DO-34		30 V	SILICON	7.6
BB405B116	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM	100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		3% MATCHED SETS AVAILABLE	DO-34		30 V	SILICON	7.6
BB809153	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM	100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		3% MATCHED SETS AVAILABLE	DO-34		30 V	SILICON	8
BB809-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM	100 Cel		O-LALF-W2	ISOLATED	Not Qualified		3% MATCHED SETS ARE AVAILABLE			30 V	SILICON	8
BB405B113	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM	100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		3% MATCHED SETS AVAILABLE	DO-34		30 V	SILICON	7.6
BB204G-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			2		CYLINDRICAL			O-PBCY-T3		Not Qualified						SILICON	2.5
BB910-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM	100 Cel		O-LALF-W2	ISOLATED	Not Qualified		CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES			32 V	SILICON	14
BB119136	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		.05 uA	1	15 V	LONG FORM	150 Cel		O-LALF-W2	ISOLATED	Not Qualified			DO-35		15 V	SILICON	1.3
BB911/A133	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	30 V	LONG FORM	100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V	SILICON	23.3
BB405B-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM	100 Cel		O-LALF-W2	ISOLATED	Not Qualified		3% MATCHED SETS ARE AVAILABLE			30 V	SILICON	7.6
BB910136	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM	100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V	SILICON	14

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.