NO Varactor Diodes 429

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Case Connection	Qualification	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Minimum Breakdown Voltage	JESD-609 Code	Diode Element Material	Minimum Diode Capacitance Ratio
BB909B113	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34	30 V		SILICON	12
BB909B136	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34	30 V		SILICON	12
BB809AMO	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel			O-LALF-W2	ISOLATED	Not Qualified		CAPACITANCE MATCHED TO 3% FOR ANY TWO DIODES	DO-34	28 V		SILICON	8
BB405B-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel			O-LALF-W2	ISOLATED	Not Qualified		3% MATCHED SETS ARE AVAILABLE		30 V		SILICON	7.6
BB204B-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			2		CYLINDRICAL						O-PBCY-T3		Not Qualified						SILICON	2.5
BB417116	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified			DO-34	30 V		SILICON	2
BB911/A143	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	30 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34	30 V		SILICON	23.3
BB910	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		LONG FORM						O-LALF-W2	ISOLATED	Not Qualified		MATCHED TO 2.5%	DO-34			SILICON	14
BB910116	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34	30 V		SILICON	14
BB909A136	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34	30 V		SILICON	12
BB417143	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified			DO-34	30 V		SILICON	2
BB405B	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE	ULTRA HIGH FREQUENCY		1		LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified	11 pF	MATCHED TO 3%	DO-34			SILICON	7.6
BB911/A153	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	30 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34	30 V		SILICON	23.3
BB405BT/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE	ULTRA HIGH FREQUENCY		1		LONG FORM	Varactors	30 V				O-LALF-W2	ISOLATED	Not Qualified	11 pF	MATCHED TO 3%	DO-34			SILICON	7.6
BB405B153	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified		3% MATCHED SETS AVAILABLE	DO-34	30 V		SILICON	7.6
BB909B-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel			O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE		32 V		SILICON	12
BB417136	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified			DO-34	30 V		SILICON	2
BB809133	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified		3% MATCHED SETS AVAILABLE	DO-34	30 V		SILICON	8
BB911/A116	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	30 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34	30 V		SILICON	23.3
BB809113	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified		3% MATCHED SETS AVAILABLE	DO-34	30 V		SILICON	8
BB119143	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		.05 uA	1	15 V	LONG FORM			150 Cel			O-LALF-W2	ISOLATED	Not Qualified			DO-35	15 V		SILICON	1.3
BB910133	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34	30 V		SILICON	14
BB119153	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		.05 uA	1	15 V	LONG FORM			150 Cel			O-LALF-W2	ISOLATED	Not Qualified			DO-35	15 V		SILICON	1.3
BB119113	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		.05 uA	1	15 V	LONG FORM			150 Cel			O-LALF-W2	ISOLATED	Not Qualified			DO-35	15 V		SILICON	1.3
BB909A113	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34	30 V		SILICON	12
BB417-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		.1 uA	1	20 V	LONG FORM			100 Cel			O-LALF-W2	ISOLATED	Not Qualified						SILICON	2
BB119-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		2 uA	1	15 V	LONG FORM			200 Cel			O-LALF-W2	ISOLATED	Not Qualified						SILICON	1.3
BB119	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE			1		LONG FORM						O-LALF-W2	ISOLATED	Not Qualified	17 pF		DO-35			SILICON	1.3
BB911/AT/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE	VERY HIGH FREQUENCY		1		LONG FORM	Varactors	30 V				O-LALF-W2	ISOLATED	Not Qualified	60 pF	MATCHED TO 2.5%	DO-34			SILICON	23.3
BB119116	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		.05 uA	1	15 V	LONG FORM			150 Cel			O-LALF-W2	ISOLATED	Not Qualified			DO-35	15 V		SILICON	1.3
BB910153	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34	30 V		SILICON	14
BB910113	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34	30 V		SILICON	14
BB809	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified	39 pF	CAPACITANCE MATCHED TO 3% FOR ANY TWO DIODES	DO-34	30 V		SILICON	8
BB909B143	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34	30 V		SILICON	12
BB212-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			2		CYLINDRICAL						O-PBCY-T3		Not Qualified						SILICON	22.5
BB204B-TO-92C	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS			2		CYLINDRICAL						O-XBCY-T3		Not Qualified				32 V		SILICON	2.55
BBY26S1	Infineon Technologies	VARIABLE CAPACITANCE DIODE				NO		200								Varactors	120 V							22 pF
BB304-TO-92C	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS			2		CYLINDRICAL						O-XBCY-T3		Not Qualified				32 V		SILICON	1.65
BB204B-TO-92D	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS			2		CYLINDRICAL						O-XBCY-T3		Not Qualified				32 V		SILICON	2.55
BB304A	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			2		CYLINDRICAL	Varactors	20 V				O-PBCY-T3		Not Qualified	42 pF		TO-92	18 V		SILICON	1.65
BBY36	Infineon Technologies	VARIABLE CAPACITANCE DIODE				NO		400								Varactors								3.5 pF
BBY24S1	Infineon Technologies	VARIABLE CAPACITANCE DIODE				NO		200								Varactors	120 V							14 pF
BB304	Infineon Technologies	VARIABLE CAPACITANCE DIODE				NO		100								Varactors	30 V			Tin/Lead (Sn/Pb)				48 pF				e0
BB304-TO-92D	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS			2		CYLINDRICAL						O-XBCY-T3		Not Qualified				32 V		SILICON	1.65
BB505B	Infineon Technologies	VARIABLE CAPACITANCE DIODE				NO										Varactors	28 V	150 Cel	-55 Cel	Tin/Lead (Sn/Pb)				18 pF				e0
BB204G-TO-92B	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS			2		CYLINDRICAL						O-XBCY-T3		Not Qualified				32 V		SILICON	2.55
BB609B	Infineon Technologies	VARIABLE CAPACITANCE DIODE				NO										Varactors	30 V			Tin/Lead (Sn/Pb)				32 pF				e0
BB304-TO-92B	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS			2		CYLINDRICAL						O-XBCY-T3		Not Qualified				32 V		SILICON	1.65

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.