NO Varactor Diodes 429

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Terminal Finish	JESD-30 Code	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
ZC820A	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL					O-PBCY-W2	Not Qualified	.3 W	10 pF		10 %	25 V				SILICON	5
ZC820BN	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE					R-PSIP-W2	Not Qualified	.3 W	10 pF		5 %					SILICON	4.5
ZC820M	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE					R-PSIP-W2	Not Qualified	.3 W	10 pF							SILICON	4.5
ZC823	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL					O-PBCY-W2	Not Qualified	.3 W	33 pF		20 %	25 V				SILICON	5
ZC820	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL					O-PBCY-W2	Not Qualified	.3 W	10 pF		20 %	25 V				SILICON	5
ZC823A	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL					O-PBCY-W2	Not Qualified	.3 W	33 pF		10 %	25 V				SILICON	5
ZC826BM	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE					R-PSIP-W2	Not Qualified	.3 W	100 pF		5 %					SILICON	5
ZC823B	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL					O-PBCY-W2	Not Qualified	.3 W	33 pF		5 %	25 V				SILICON	5
ZC824BM	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE					R-PSIP-W2	Not Qualified	.3 W	47 pF		5 %					SILICON	5
ZC821M	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE					R-PSIP-W2	Not Qualified	.3 W	15 pF							SILICON	4.5
ZC824B	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL					O-PBCY-W2	Not Qualified	.3 W	47 pF		5 %	25 V				SILICON	5
ZC825BN	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE					R-PSIP-W2	Not Qualified	.3 W	68 pF		5 %					SILICON	5
ZC821AN	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE					R-PSIP-W2	Not Qualified	.3 W	15 pF		10 %					SILICON	4.5
ZC820N	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE					R-PSIP-W2	Not Qualified	.3 W	10 pF							SILICON	4.5
ZC824	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL					O-PBCY-W2	Not Qualified	.3 W	47 pF		20 %	25 V				SILICON	5
ZC821BN	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE					R-PSIP-W2	Not Qualified	.3 W	15 pF		5 %					SILICON	4.5
ZC822	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL					O-PBCY-W2	Not Qualified	.3 W	22 pF		20 %	25 V				SILICON	5
ZC825B	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL					O-PBCY-W2	Not Qualified	.3 W	68 pF		5 %	25 V				SILICON	5
ZC822AM	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE					R-PSIP-W2	Not Qualified	.3 W	22 pF		10 %					SILICON	5
ZC826BN	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE					R-PSIP-W2	Not Qualified	.3 W	100 pF		5 %					SILICON	5
ZC822B	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL					O-PBCY-W2	Not Qualified	.3 W	22 pF		5 %	25 V				SILICON	5
ZC826AN	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE					R-PSIP-W2	Not Qualified	.3 W	100 pF		10 %					SILICON	5
ZC826B	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL					O-PBCY-W2	Not Qualified	.3 W	100 pF		5 %	25 V				SILICON	5
ISV224	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY							IN-LINE					R-PDIP-T2	Not Qualified		15 pF			30 V				SILICON
ISV186	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY							IN-LINE					R-PDIP-T2	Not Qualified		3.85 pF			30 V				SILICON
1SV147	Toshiba	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	3	NO	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			.05 uA	2	15 V	IN-LINE			125 Cel	TIN LEAD	R-PSIP-T3	Not Qualified			3% MATCHED GROUP AVAILABLE	.5 %	15 V	e0			SILICON	2.1
ISV226	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY							IN-LINE					R-PDIP-T2	Not Qualified		41 pF			30 V				SILICON
1S2094	Toshiba	VARIABLE CAPACITANCE DIODE				NO		150									Varactors	18 V		Tin/Lead (Sn/Pb)				7 pF				e0
ISV227	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY							IN-LINE					R-PDIP-T2	Not Qualified		28 pF			30 V				SILICON
ISV147	Toshiba	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY							IN-LINE					R-PSIP-T2	Not Qualified		28.5 pF			15 V		NOT SPECIFIED	240	SILICON
ISV149	Toshiba	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY							IN-LINE					R-PSIP-T2	Not Qualified		435 pF			15 V		NOT SPECIFIED	240	SILICON
ISV211	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY							IN-LINE					R-PDIP-T2	Not Qualified		33 pF			30 V				SILICON
1SV102	Toshiba	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	2	NO	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE				1		IN-LINE					R-PSIP-T2	Not Qualified			3% MATCHED GROUP AVAILABLE	.5 %			NOT SPECIFIED	NOT SPECIFIED	SILICON	20
ISV212	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY							IN-LINE					R-PDIP-T2	Not Qualified		14 pF			15 V				SILICON
1SV101	Toshiba	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY	SINGLE			.00000001 uA	1	15 V	IN-LINE	Varactors	15 V	125 Cel	Tin/Lead (Sn/Pb)	R-PSIP-T2	Not Qualified		30 pF	CAPACITANCE MATCHED TO 3%		15 V	e0			SILICON	2
ISV161	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY							IN-LINE					R-PDIP-T2	Not Qualified		26 pF			30 V				SILICON
ISV153	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY							IN-LINE					R-PDIP-T2	Not Qualified		14.16 pF			30 V				SILICON
1SV103	Toshiba	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	3	NO	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		IN-LINE			125 Cel		R-PSIP-T3	Not Qualified							NOT SPECIFIED	240	SILICON	2.6
ISV103	Toshiba	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY							IN-LINE					R-PSIP-T2	Not Qualified		37 pF			35 V		NOT SPECIFIED	240	SILICON
ISV153A	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY							IN-LINE					R-PDIP-T2	Not Qualified		14.16 pF			30 V				SILICON
ISV101	Toshiba	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY							IN-LINE					R-PSIP-T2	Not Qualified		28 pF			15 V		NOT SPECIFIED	240	SILICON
ISV102	Toshiba	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY							IN-LINE					R-PSIP-T2	Not Qualified		360 pF			30 V		NOT SPECIFIED	240	SILICON
1S2207(B)MC	Renesas Electronics	VARIABLE CAPACITANCE DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		IN-LINE					R-PDIP-T2	Not Qualified			HIGH RELIABILITY						SILICON	2.2
1S2207(B)LC	Renesas Electronics	VARIABLE CAPACITANCE DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		IN-LINE					R-PDIP-T2	Not Qualified			HIGH RELIABILITY						SILICON	2.2
1S2207(B)KC	Renesas Electronics	VARIABLE CAPACITANCE DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		IN-LINE					R-PDIP-T2	Not Qualified			HIGH RELIABILITY						SILICON	2.2

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.