NO Varactor Diodes 429

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
MV2101G	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	450	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		CYLINDRICAL	Varactors	30 V			TIN SILVER COPPER	O-PBCY-T2		Not Qualified	.28 W	6.8 pF	HIGH Q, HIGH RELIABILITY	TO-92	10 %	30 V	e1	260	SILICON	2.5
MV1404	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	200	GLASS	SINGLE	HYPERABRUPT			1		LONG FORM			125 Cel			O-LALF-W2	ISOLATED	Not Qualified	.4 W	120 pF		DO-204AA	20 %	12 V			SILICON	10
1N5705	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	325	GLASS	SINGLE	ABRUPT		.00000002 uA	1	60 V	LONG FORM	Varactors	60 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	39 pF		DO-7	20 %	65 V	e0		SILICON	3.2
SVC321B	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE			.1 uA	1	9 V	CYLINDRICAL		16 V	100 Cel			O-PBCY-T2							3 %	16 V			SILICON	15.5
MV2101ZL1	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	450	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	6.8 pF	HIGH RELIABILITY, EUROPEAN PART NUMBER	TO-92	10 %	30 V	e0		SILICON	2.5
SVC390	Onsemi	VARIABLE CAPACITANCE DIODE				NO		200									Varactors	16 V								50 pF
1N5451	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	300	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	39 pF		DO-7	20 %	30 V	e0		SILICON	2.6
MV2109RLRPG	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		CYLINDRICAL	Varactors	30 V			TIN SILVER COPPER	O-PBCY-T2		Not Qualified	.28 W	33 pF	HIGH RELIABILITY	TO-92	10 %	30 V	e1	260	SILICON	2.5
1N5444	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	400	GLASS	SINGLE	ABRUPT		.02 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	12 pF		DO-7	20 %	30 V	e0		SILICON	2.6
1N4791	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.005 uA	1	20 V	LONG FORM	Varactors	20 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.5 W	18 pF		DO-7	20 %	22 V	e0		SILICON	2.36
1N5464	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	550	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	12 pF		DO-7	20 %	30 V	e0		SILICON	2.8
1N5456A	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	175	GLASS	SINGLE	ABRUPT	ULTRA HIGH FREQUENCY		1		LONG FORM						O-LALF-W2	ISOLATED	Not Qualified	.4 W	100 pF		DO-204AA	10 %	30 V			SILICON	2.7
1N4807	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.000000005 uA	1	90 V	LONG FORM	Varactors	90 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.5 W	22 pF		DO-7	20 %	99 V	e0		SILICON	2.35
LV2205RLRM	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	400	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	15 pF	HIGH RELIABILITY	TO-92	10 %	25 V	e0		SILICON	2.5
MV2105RLRP	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	400	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	15 pF	HIGH RELIABILITY	TO-92	10 %	30 V	e0		SILICON	2.5
SVC203SPA	Onsemi	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	3	NO	RECTANGULAR	60	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		IN-LINE					Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)	R-PSIP-T3		Not Qualified	.1 W				7.64 %	16 V			SILICON	2.1924
SVC344	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	3	NO	ROUND	200	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL	Varactors	30 V				O-PBCY-W3		Not Qualified		430 pF		TO-92	2 %	30 V			SILICON	15
1N4804	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.000000005 uA	1	100 V	LONG FORM	Varactors	100 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.5 W	12 pF		DO-7	20 %	110 V	e0		SILICON	2.35
MV1630	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE				1		LONG FORM					TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	18 pF		DO-204AA	10 %	20 V	e0		SILICON	2
MV209RLRP	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		CYLINDRICAL					TIN LEAD	O-PBCY-T2		Not Qualified	.2 W	29 pF	HIGH RELIABILITY	TO-92	10.34 %	30 V	e0		SILICON	5
1N4789	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.005 uA	1	25 V	LONG FORM	Varactors	25 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.5 W	12 pF		DO-7	20 %	28 V	e0		SILICON	2.35
1N5462	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	600	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	8.2 pF		DO-7	20 %	30 V	e0		SILICON	2.8
MV209ZL1	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		CYLINDRICAL			125 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.2 W	29 pF	HIGH RELIABILITY, EUROPEAN PART NUMBER	TO-92	10.34 %	30 V	e0		SILICON	5
MV209RL1	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		CYLINDRICAL			125 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.2 W	29 pF	HIGH RELIABILITY, EUROPEAN PART NUMBER	TO-92	10.34 %	30 V	e0		SILICON	5
SVCA361	Onsemi	VARIABLE CAPACITANCE DIODE				NO		200									Varactors	16 V								500 pF
1N5442	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	450	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	8.2 pF		DO-7	20 %	30 V	e0		SILICON	2.5
MV2109RLRM	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	33 pF	HIGH RELIABILITY	TO-92	10 %	30 V	e0		SILICON	2.5
1N5440	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	450	GLASS	SINGLE			.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	4.7 pF			20 %	30 V	e0		SILICON	2.4
LV2205RLRP	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	400	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	15 pF	HIGH RELIABILITY	TO-92	10 %	25 V	e0		SILICON	2.5
1N5475	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	225	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	82 pF		DO-7	20 %	30 V	e0		SILICON	2.9
SVC321D	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE			.1 uA	1	9 V	CYLINDRICAL		16 V	100 Cel			O-PBCY-T2							3 %	16 V			SILICON	15.5
1N5686	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	500	GLASS	SINGLE	ABRUPT		.00000002 uA	1	40 V	LONG FORM	Varactors	40 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	18 pF		DO-7	20 %	45 V	e0		SILICON	3.2
MV2109RL	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	33 pF	HIGH RELIABILITY, EUROPEAN PART NUMBER	TO-92	10 %	30 V	e0		SILICON	2.5
1N4800	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.000000005 uA	1	15 V	LONG FORM	Varactors	15 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.5 W	100 pF		DO-7	20 %	17 V	e0		SILICON	2.24
MV2109RLRA	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		CYLINDRICAL	Varactors	30 V			TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	33 pF	HIGH RELIABILITY	TO-92	10 %	30 V	e0	235	SILICON	2.5
1N5476	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	200	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	100 pF		DO-7	20 %	30 V	e0		SILICON	2.9
1N4795	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.005 uA	1	20 V	LONG FORM	Varactors	55 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.5 W	39 pF		DO-7	20 %	22 V	e0		SILICON	2.34
MV104RLRAG	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT			2		CYLINDRICAL	Varactors	32 V			TIN SILVER COPPER	O-PBCY-T3		Not Qualified	.28 W	39.5 pF	1% MATCHING GUARANTEED	TO-92	6.33 %	32 V	e1	260	SILICON	2.5
SVC211	Onsemi	VARIABLE CAPACITANCE DIODE				NO		100									Varactors	30 V								42 pF
1N5691	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	400	GLASS	SINGLE	ABRUPT		.00000002 uA	1	40 V	LONG FORM	Varactors	40 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	47 pF		DO-7	20 %	45 V	e0		SILICON	3.3
MV2101RLRE	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	450	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	6.8 pF	HIGH RELIABILITY	TO-92	10 %	30 V	e0		SILICON	2.5
1N5466	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	500	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	18 pF		DO-7	20 %	30 V	e0		SILICON	2.9
SVC321SP	Onsemi	VARIABLE CAPACITANCE DIODE				NO		200									Varactors	8 V								459 pF
1N5468	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	500	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	22 pF		DO-7	20 %	30 V	e0		SILICON	2.9
BB909A116	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V			SILICON	12
BB909A-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel			O-LALF-W2	ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE			32 V			SILICON	12
BB809-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel			O-LALF-W2	ISOLATED	Not Qualified			3% MATCHED SETS ARE AVAILABLE			30 V			SILICON	8
BB909B133	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V			SILICON	12

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.