NO Varactor Diodes 429

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio	Reference Standard
2803	Api Technologies	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	150	GLASS	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		LONG FORM						O-LALF-W2	ISOLATED	Not Qualified		10 pF		DO-7		22 V				SILICON	4.9
1N5446A	Microsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	350	GLASS	SINGLE	ABRUPT			1		LONG FORM			175 Cel		TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	18 pF	HIGH RELIABILITY	DO-7	10 %	30 V	e0			SILICON	2.6
1N5470B	Microsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	500	GLASS	SINGLE	ABRUPT			1		LONG FORM			175 Cel		TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	33 pF	HIGH RELIABILITY	DO-7	5 %	30 V	e0			SILICON	2.9
1N5470A	Microsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	500	GLASS	SINGLE	ABRUPT			1		LONG FORM			175 Cel		TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	33 pF	HIGH RELIABILITY	DO-7	10 %	30 V	e0			SILICON	2.9
1N5470	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	500	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	33 pF		DO-7	20 %	30 V	e0			SILICON	2.9
1N5470C	Microsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	500	GLASS	SINGLE	ABRUPT			1		LONG FORM			175 Cel		TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	33 pF	HIGH RELIABILITY	DO-7	2 %	30 V	e0			SILICON	2.9
JANTXV1N5470B	Defense Logistics Agency	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	500	UNSPECIFIED	SINGLE				1		LONG FORM						O-XALF-W2	ISOLATED	Not Qualified	.4 W	33 pF			5 %	30 V				SILICON	2.9	MIL-19500/436A
PC123	Api Technologies	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	50	GLASS	SINGLE	ABRUPT		.5 uA	1	30 V	LONG FORM	Varactors	30 V	175 Cel			O-LALF-W2	ISOLATED	Not Qualified	.4 W	15 pF	SUPER Q	DO-7	20 %					SILICON	4.6
MV2106	Motorola	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND		PLASTIC/EPOXY	SINGLE			.1 uA	1	25 V	CYLINDRICAL			125 Cel		TIN LEAD	O-PBCY-W2		Not Qualified	.28 W	18 pF			10 %	30 V	e0			SILICON	2.5
MV2115	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	100	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL	Varactors	30 V			TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	100 pF		TO-92	10 %	30 V	e0			SILICON	2.6
MVAM115	Motorola	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	150	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		.1 uA	1	15 V	CYLINDRICAL			125 Cel	-55 Cel	TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	500 pF	3% MATCHED SETS AVAILABLE	TO-226AC		18 V	e0			SILICON	15
1SV149	Toshiba	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	2	NO	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE			.05 uA	1	15 V	IN-LINE			125 Cel		Tin/Lead (Sn/Pb)	R-PSIP-T2		Not Qualified			2.5% MATCHED GROUP AVAILABLE		.5 %	15 V	e0			SILICON	15
MV1401	Motorola	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	200	GLASS	SINGLE	HYPERABRUPT		.1 uA	1	10 V	LONG FORM			175 Cel		TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	550 pF		DO-204AB	15 %	12 V	e0			SILICON	14
MV1620	Motorola	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	300	GLASS	SINGLE	ABRUPT	ULTRA HIGH FREQUENCY	.1 uA	1	15 V	LONG FORM	Varactors	20 V	125 Cel		Tin/Lead (Sn/Pb)	O-LALF-W2	ISOLATED	Not Qualified	.4 W	6.8 pF		DO-204AA		20 V	e0			SILICON	2
MV2201	Motorola	VARIABLE CAPACITANCE DIODE				NO		300									Varactors	25 V			Tin/Lead (Sn/Pb)					6.8 pF					e0
MVAM109	Motorola	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	150	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		.1 uA	1	9 V	CYLINDRICAL	Varactors	15 V	125 Cel	-55 Cel	TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	460 pF	3% MATCHED SETS AVAILABLE	TO-226AC		15 V	e0			SILICON	12
MVAM125	Motorola	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	150	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		.1 uA	1	25 V	CYLINDRICAL	Varactors	28 V	125 Cel	-55 Cel	TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	500 pF	3% MATCHED SETS AVAILABLE	TO-226AC		28 V	e0			SILICON	15
TIV21	Texas Instruments	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	150	CERAMIC, GLASS-SEALED	SINGLE		ULTRA HIGH FREQUENCY		1		LONG FORM	Varactors	30 V				O-GALF-W2	ISOLATED	Not Qualified	.25 W	11 pF	AVAILABLE IN MATCHED SETS	DO-34		30 V				SILICON	4.5
TIV22	Texas Instruments	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	150	CERAMIC, GLASS-SEALED	SINGLE		ULTRA HIGH FREQUENCY		1		LONG FORM	Varactors	30 V				O-GALF-W2	ISOLATED	Not Qualified	.25 W	11 pF	AVAILABLE IN MATCHED SETS	DO-34		30 V				SILICON	4
TIV25	Texas Instruments	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	80	CERAMIC, GLASS-SEALED	SINGLE		VERY HIGH FREQUENCY		1		LONG FORM	Varactors	30 V				O-GALF-W2	ISOLATED	Not Qualified	.25 W	28 pF	AVAILABLE IN MATCHED SETS	DO-34		30 V				SILICON	4.5
TIV308	Texas Instruments	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	200	CERAMIC, GLASS-SEALED	SINGLE				1		LONG FORM	Varactors	20 V				O-GALF-W2	ISOLATED	Not Qualified	.25 W	11 pF		DO-35		20 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	2.4
TIV23	Texas Instruments	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	100	CERAMIC, GLASS-SEALED	SINGLE		ULTRA HIGH FREQUENCY		1		LONG FORM	Varactors	30 V				O-GALF-W2	ISOLATED	Not Qualified	.25 W	11 pF	AVAILABLE IN MATCHED SETS	DO-34		30 V				SILICON	4
TIV306	Texas Instruments	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	200	CERAMIC, GLASS-SEALED	SINGLE				1		LONG FORM	Varactors	20 V				O-GALF-W2	ISOLATED	Not Qualified	.25 W	7 pF		DO-35		20 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	2.2
TIV24	Texas Instruments	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	80	CERAMIC, GLASS-SEALED	SINGLE		VERY HIGH FREQUENCY		1		LONG FORM	Varactors	30 V				O-GALF-W2	ISOLATED	Not Qualified	.25 W	28 pF	AVAILABLE IN MATCHED SETS	DO-34		30 V				SILICON	3.5
TIV307	Texas Instruments	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	200	CERAMIC, GLASS-SEALED	SINGLE				1		LONG FORM	Varactors	20 V				O-GALF-W2	ISOLATED	Not Qualified	.25 W	9 pF		DO-35		20 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	2.3
1N5446ARL	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	350	GLASS	SINGLE	ABRUPT	ULTRA HIGH FREQUENCY		1		LONG FORM						O-LALF-W2	ISOLATED	Not Qualified	.4 W	18 pF		DO-204AA	10 %	30 V				SILICON	2.6
1N5447	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	350	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	20 pF		DO-7	20 %	30 V	e0			SILICON	2.6
SVC321C	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE			.1 uA	1	9 V	CYLINDRICAL		16 V	100 Cel			O-PBCY-T2							3 %	16 V				SILICON	15.5
MV1648	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE				1		LONG FORM						O-LALF-W2	ISOLATED	Not Qualified	.4 W	82 pF		DO-204AA	10 %	20 V				SILICON	2
LV2209RLRE	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	33 pF	HIGH RELIABILITY	TO-92	10 %	25 V	e0			SILICON	2.5
1N5473	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	300	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	56 pF		DO-7	20 %	30 V	e0			SILICON	2.9
MV2109RLRP	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		CYLINDRICAL	Varactors	30 V			TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	33 pF	HIGH RELIABILITY	TO-92	10 %	30 V	e0		235	SILICON	2.5
1N5443	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	400	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	10 pF		DO-7	20 %	30 V	e0			SILICON	2.6
MC209RLRA	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	200	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		CYLINDRICAL					TIN LEAD	O-PBCY-T3		Not Qualified	.2 W	29 pF		TO-92	10.34 %	30 V	e0			SILICON	5
1N5448ARL	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	350	GLASS	SINGLE	ABRUPT	ULTRA HIGH FREQUENCY		1		LONG FORM						O-LALF-W2	ISOLATED	Not Qualified	.4 W	22 pF		DO-204AA	10 %	30 V				SILICON	2.6
MV2105RL	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	400	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	15 pF	HIGH RELIABILITY, EUROPEAN PART NUMBER	TO-92	10 %	30 V	e0			SILICON	2.5
MV2101RL1	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	450	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	6.8 pF	HIGH RELIABILITY, EUROPEAN PART NUMBER	TO-92	10 %	30 V	e0			SILICON	2.5
1N4792	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.000000005 uA	1	20 V	LONG FORM	Varactors	20 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.5 W	22 pF		DO-7	20 %	22 V	e0			SILICON	2.35
LV2209RL	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	33 pF	HIGH RELIABILITY, EUROPEAN PART NUMBER	TO-92	10 %	25 V	e0			SILICON	2.5
MV104RLRP	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL			125 Cel		TIN LEAD	O-PBCY-T3		Not Qualified	.28 W	39.5 pF		TO-92	6.33 %	32 V	e0			SILICON	2.5
SVC201SPA	Onsemi	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE					Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)	R-PSIP-T2		Not Qualified		28.19 pF	HIGH Q			16 V				SILICON	2.2
1N4803	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.000000005 uA	1	100 V	LONG FORM	Varactors	100 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.5 W	10 pF		DO-7	20 %	110 V	e0			SILICON	2.34
MV2101RL	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	450	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	6.8 pF	HIGH RELIABILITY, EUROPEAN PART NUMBER	TO-92	10 %	30 V	e0			SILICON	2.5
LV2209RLRP	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	33 pF	HIGH RELIABILITY	TO-92	10 %	25 V	e0			SILICON	2.5
1N5700	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	400	GLASS	SINGLE	ABRUPT		.00000002 uA	1	60 V	LONG FORM	Varactors	60 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	15 pF		DO-7	20 %	65 V	e0			SILICON	2.8
LV2209RLRM	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	33 pF	HIGH RELIABILITY	TO-92	10 %	25 V	e0			SILICON	2.5
MV2109	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		CYLINDRICAL	Varactors	30 V			Tin/Lead (Sn/Pb)	O-PBCY-T2		Not Qualified	.28 W	33 pF	HIGH Q, HIGH RELIABILITY	TO-92	10 %	30 V	e0	30	235	SILICON	2.5
SVC321SPAA	Onsemi	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	2	NO	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE			.1 uA	1	9 V	IN-LINE	Varactors	16 V	100 Cel			R-PSIP-T2							3 %	16 V				SILICON	15.5

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.