FLAT Varactor Diodes 577

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Config Variable Capacitance Diode Classification Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Reverse Recovery Time Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features JEDEC-95 Code Diode Cap Tolerance Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

934055438135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

Tin (Sn)

R-PDSO-F2

1

Not Qualified

12.5 pF

36 %

e3

30

260

SILICON

12

934055438115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

Tin (Sn)

R-PDSO-F2

1

Not Qualified

12.5 pF

36 %

e3

30

260

SILICON

12

BB142T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

TIN

R-PDSO-F2

Not Qualified

4.6 pF

e3

SILICON

2

BB145T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

TIN

R-PDSO-F2

Not Qualified

6.9 pF

6 V

e3

SILICON

2

BB141

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

8 V

TIN

R-PDSO-F2

Not Qualified

4.2 pF

e3

SILICON

1.65

933215290135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

TIN

R-PDSO-F2

Not Qualified

4.6 pF

10.11 %

e3

SILICON

2

934056505115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

R-PDSO-F2

Not Qualified

6.9 pF

7.25 %

10 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

2.39

934050200115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

19.74 pF

EXCELLENT MATCHING TO 2% DMA

7.7 %

e3

SILICON

8.45

BB143T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

TIN

R-PDSO-F2

Not Qualified

5.3 pF

e3

SILICON

2.1

934050190135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

TIN

R-PDSO-F2

Not Qualified

38.5 pF

EXCELLENT MATCHING TO 2% DMA

10 %

32 V

e3

SILICON

13.5

BB187T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

29.3 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

e3

SILICON

11

934053250115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

19.11 pF

4.66 %

32 V

e3

SILICON

8.45

BB182T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

57 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

8.77 %

32 V

e3

SILICON

20.6

934050200135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

TIN

R-PDSO-F2

Not Qualified

19.74 pF

EXCELLENT MATCHING TO 2% DMA

7.7 %

e3

SILICON

8.45

BB182-T

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

57 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

8.77 %

32 V

e3

SILICON

20.6

BB182B

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

R-PDSO-F2

Not Qualified

50 pF

EXCELLENT MATCHING TO 2% DMA, HIGH LINEARITY, LOW SERIES RESISTANCE

6 %

34 V

SILICON

17

BB181T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

150 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

36 %

e3

SILICON

12

934055435115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

R-PDSO-F2

Not Qualified

5.3 pF

9.52 %

NOT SPECIFIED

NOT SPECIFIED

SILICON

2.1

BB141,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

150 Cel

-55 Cel

TIN

R-PDSO-F2

NOT APPLICABLE

Not Qualified

4.2 pF

e3

NOT SPECIFIED

NOT SPECIFIED

SILICON

1.65

BB141T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

8 V

150 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

4.2 pF

e3

SILICON

1.65

BB181,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

1

Not Qualified

36 %

e3

30

260

SILICON

12

BB181

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

150 Cel

-55 Cel

Tin (Sn)

R-PDSO-F2

1

Not Qualified

36 %

e3

30

260

SILICON

12

BB208-02,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

10 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

1

Not Qualified

10.1 pF

e3

30

260

SILICON

3.7

934047500335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

57 pF

8.77 %

32 V

e3

SILICON

20.6

BB145,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

150 Cel

-55 Cel

TIN

R-PDSO-F2

NOT APPLICABLE

Not Qualified

6.9 pF

6 V

e3

NOT SPECIFIED

NOT SPECIFIED

SILICON

2

BB184,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

13 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

14 pF

2% MATCHED SETS OF 5 DIODES ARE AVAILABLE

9.29 %

13 V

e3

SILICON

6

BB143

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

8 V

MATTE TIN

R-PDSO-F2

Not Qualified

5.3 pF

e3

260

SILICON

2.1

934055909115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

150 Cel

-55 Cel

Tin (Sn)

R-PDSO-F2

1

Not Qualified

6.9 pF

7.25 %

e3

30

260

SILICON

2.2

934055720135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

31.75 pF

7.72 %

32 V

e3

SILICON

11

934055720115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

31.75 pF

7.72 %

32 V

e3

SILICON

11

934050200335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

19.74 pF

7.7 %

e3

SILICON

8.45

BB145B

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

8 V

Tin (Sn)

R-PDSO-F2

1

Not Qualified

6.8 pF

5.88 %

6 V

e3

30

260

SILICON

2.2

934050190115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

38.5 pF

EXCELLENT MATCHING TO 2% DMA

10 %

32 V

e3

SILICON

13.5

934053250335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

19.11 pF

4.66 %

32 V

e3

SILICON

8.45

BB182

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

57 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

8.77 %

32 V

e3

SILICON

20.6

933202800115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

R-PDSO-F2

Not Qualified

4.2 pF

7.14 %

NOT SPECIFIED

NOT SPECIFIED

SILICON

1.65

BB145BT/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

TIN

R-PDSO-F2

Not Qualified

6.8 pF

5.88 %

6 V

e3

SILICON

2.2

BB143,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

150 Cel

-55 Cel

TIN

R-PDSO-F2

NOT APPLICABLE

Not Qualified

5.3 pF

e3

NOT SPECIFIED

NOT SPECIFIED

SILICON

2.1

BB187

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

29.3 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

e3

SILICON

11

BB187,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

29.3 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

e3

SILICON

11

BB182,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

57 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

8.77 %

32 V

e3

SILICON

20.6

934047500115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

57 pF

8.77 %

32 V

e3

SILICON

20.6

934055676115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

R-PDSO-F2

Not Qualified

6.9 pF

7.25 %

NOT SPECIFIED

NOT SPECIFIED

SILICON

2

934055721115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

R-PDSO-F2

Not Qualified

50 pF

6 %

34 V

SILICON

17

933215290115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

TIN

R-PDSO-F2

Not Qualified

4.6 pF

10.11 %

e3

SILICON

2

934055720335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

31.75 pF

7.72 %

32 V

e3

SILICON

11

BB145B-01

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

R-PDSO-F2

Not Qualified

6.8 pF

5.88 %

SILICON

2.2

BB184

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

14 pF

2% MATCHED SETS OF 5 DIODES ARE AVAILABLE

9.29 %

13 V

e3

SILICON

6

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.