FLAT Varactor Diodes 577

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Config Variable Capacitance Diode Classification Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Reverse Recovery Time Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features JEDEC-95 Code Diode Cap Tolerance Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

BB182BT/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

R-PDSO-F2

Not Qualified

50 pF

EXCELLENT MATCHING TO 2% DMA, HIGH LINEARITY, LOW SERIES RESISTANCE

6 %

34 V

SILICON

17

BB208-02

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

10 V

125 Cel

-55 Cel

Tin (Sn)

R-PDSO-F2

1

Not Qualified

10.1 pF

e3

30

260

SILICON

3.7

934053250135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

19.11 pF

4.66 %

32 V

e3

SILICON

8.45

BB145

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

8 V

MATTE TIN

R-PDSO-F2

Not Qualified

6.9 pF

6 V

e3

260

SILICON

2

934056920115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

85 Cel

-55 Cel

Tin (Sn)

R-PDSO-F2

1

Not Qualified

30.85 pF

8.59 %

e3

30

260

SILICON

2.5

BB145C

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

12 V

R-PDSO-F2

Not Qualified

5.88 %

10 V

SILICON

2.39

BB184,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

13 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

14 pF

2% MATCHED SETS OF 5 DIODES ARE AVAILABLE

9.29 %

13 V

e3

SILICON

6

BB145B,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

8 V

150 Cel

-55 Cel

TIN

R-PDSO-F2

1

Not Qualified

6.8 pF

5.88 %

6 V

e3

30

260

SILICON

2.2

IEC-60134

934056920135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

85 Cel

-55 Cel

TIN

R-PDSO-F2

1

Not Qualified

30.85 pF

8.59 %

e3

30

260

SILICON

2.5

BB142

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

8 V

TIN

R-PDSO-F2

Not Qualified

4.6 pF

e3

SILICON

2

BB199

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

150 Cel

-65 Cel

TIN

R-PDSO-F2

.3 W

39.5 pF

7.59 %

e3

SILICON

2.8

934055438335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

Tin (Sn)

R-PDSO-F2

1

Not Qualified

12.5 pF

36 %

e3

30

260

SILICON

12

BB198

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

150 Cel

-65 Cel

TIN

R-PDSO-F2

.3 W

26.75 pF

6.54 %

20 V

e3

SILICON

4.3

934055721335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

R-PDSO-F2

Not Qualified

50 pF

6 %

34 V

SILICON

17

934047500135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

57 pF

8.77 %

32 V

e3

SILICON

20.6

BB202

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

6 V

85 Cel

-55 Cel

Tin (Sn)

R-PDSO-F2

1

Not Qualified

8.59 %

e3

30

260

SILICON

2.5

934050190335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

38.5 pF

10 %

32 V

e3

SILICON

13.5

BB202,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

6 V

85 Cel

-55 Cel

TIN

R-PDSO-F2

1

Not Qualified

8.59 %

e3

30

260

SILICON

2.5

BB179,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

19.74 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

30 V

e3

SILICON

8.45

BB179,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

19.74 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

30 V

e3

SILICON

8.45

BB179B,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

19.11 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

4.66 %

32 V

e3

SILICON

8.45

BB178,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

32 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

38.5 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

e3

SILICON

13.5

BB179

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

19.74 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

30 V

e3

SILICON

8.45

BB179B-T

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

R-PDSO-F2

Not Qualified

19.11 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

4.66 %

32 V

SILICON

8.45

BB173

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

VERY HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

32 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

1

38.65 pF

10 %

e3

SILICON

13.5

IEC-60134

BB175

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

VERY HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

32 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

1

57 pF

8.77 %

32 V

e3

SILICON

20.6

IEC-60134

BB178/T3

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

32 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

38.5 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

e3

SILICON

13.5

BB179-T

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

19.74 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

30 V

e3

SILICON

8.45

BB179BT/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

19.11 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

4.66 %

32 V

e3

SILICON

8.45

BB179B

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

19.11 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

4.66 %

32 V

e3

SILICON

8.45

BB179T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

19.74 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

30 V

e3

SILICON

8.45

BB178,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

32 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

38.5 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

e3

SILICON

13.5

BB178T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

32 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

38.5 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

e3

SILICON

13.5

BB178

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

32 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

38.5 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

e3

SILICON

13.5

BB179/T3

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

19.74 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

30 V

e3

SILICON

8.45

SP000743550

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

125 Cel

-55 Cel

R-PDSO-F2

5.3 pF

9.43 %

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

1.8

SP000743556

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

150 Cel

-55 Cel

R-PDSO-F2

18.6 pF

5.66 %

16 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

2

BB565

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

R-PDSO-F2

1

Not Qualified

20 pF

LOW INDUCTANCE

7.5 %

SILICON

6.3

BB664

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

R-PDSO-F2

1

Not Qualified

41.8 pF

6.59 %

30 V

SILICON

11

BB689

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

R-PDSO-F2

1

Not Qualified

56.5 pF

CAPACITANCE MATCHED TO 2%

9.33 %

SILICON

14.5

BB664E6433

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

R-PDSO-F2

Not Qualified

41.8 pF

6.59 %

30 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

11

BB857-02V

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

.2 uA

1

30 V

SMALL OUTLINE

35 V

150 Cel

-55 Cel

R-PDSO-F2

6.6 pF

NOT SPECIFIED

NOT SPECIFIED

SILICON

9.7

BB565H7902XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

R-PDSO-F2

20 pF

LOW INDUCTANCE

7.5 %

SILICON

6.3

BB664-02V-H7902

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

150 Cel

-55 Cel

R-PDSO-F2

1

41.8 pF

6.59 %

30 V

260

SILICON

11

BB664-02VE6433

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

R-PDSO-F2

Not Qualified

41.8 pF

6.59 %

30 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

11

BB857H7902XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

1

SMALL OUTLINE

150 Cel

-55 Cel

R-PDSO-F2

6.6 pF

9.09 %

30 V

SILICON

9.7

BB68902VE7908XT

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

R-PDSO-F2

56.5 pF

CAPACITANCE MATCHED TO 2%

9.33 %

NOT SPECIFIED

NOT SPECIFIED

SILICON

14.5

BB565H7912XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

R-PDSO-F2

20 pF

LOW INDUCTANCE

7.5 %

NOT SPECIFIED

NOT SPECIFIED

SILICON

6.3

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.