FLAT Varactor Diodes 577

Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Config Variable Capacitance Diode Classification Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Reverse Recovery Time Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features JEDEC-95 Code Diode Cap Tolerance Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

ZV931V2TA

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

125 Cel

R-PDSO-F2

Not Qualified

.25 W

7.15 pF

LOW NOISE

9.09 %

12 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

ZV933V2TA

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

150

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

125 Cel

R-PDSO-F2

Not Qualified

.25 W

22.5 pF

LOW NOISE

20 %

12 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

ZV831BV2TC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Varactors

25 V

MATTE TIN

R-PDSO-F2

1

Not Qualified

.25 W

15 pF

LOW NOISE

5 %

25 V

e3

30

260

SILICON

4.5

ZV950V2TA

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

250

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Varactors

12 V

MATTE TIN

R-PDSO-F2

1

Not Qualified

.25 W

7.05 pF

10.64 %

12 V

e3

30

260

SILICON

2

UZV832BV2TC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

R-PDSO-F2

Not Qualified

.25 W

22 pF

LOW NOISE

5 %

25 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

5

JDV2S41FS

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

R-PDSO-F2

Not Qualified

15 pF

6.67 %

15 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

2.5

JDV2S05S

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

10 V

150 Cel

TIN LEAD

R-XDSO-F2

Not Qualified

4.2 pF

8.33 %

10 V

e0

SILICON

1.7

1SV279,H3F(T

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.003 uA

1

15 V

SMALL OUTLINE

15 V

125 Cel

R-PDSO-F2

15 pF

6.67 %

15 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

2

JDV2S25FS

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

10 V

150 Cel

R-PDSO-F2

Not Qualified

3.19 %

NOT SPECIFIED

NOT SPECIFIED

SILICON

2.77

1SV325

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

10 V

125 Cel

R-PDSO-F2

Not Qualified

46.75 pF

5.88 %

NOT SPECIFIED

NOT SPECIFIED

SILICON

4

JDV2S36E(TH3APN,F)

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

R-PDSO-F2

46.75 pF

5.88 %

10 V

SILICON

6.3

1SV309

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY TO KA BAND

1

SMALL OUTLINE

Varactors

35 V

125 Cel

Tin/Lead (Sn/Pb)

R-PDSO-F2

Not Qualified

3.93 pF

15.78 %

30 V

e0

SILICON

5

1SV329

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

10 V

125 Cel

TIN LEAD

R-PDSO-F2

Not Qualified

6.2 pF

8.06 %

e0

SILICON

2.7

JDV2S06S

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

10 V

Tin/Lead (Sn/Pb)

R-PDSO-F2

Not Qualified

16 pF

6.25 %

e0

SILICON

1.8

1SV314(TPH3)

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

10 V

125 Cel

Tin/Lead (Sn/Pb)

R-PDSO-F2

7.85 pF

7.01 %

e0

SILICON

2.4

1SV311

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

10 V

125 Cel

R-PDSO-F2

Not Qualified

10.4 pF

6.73 %

NOT SPECIFIED

NOT SPECIFIED

SILICON

1.8

JDV2S10S

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

10 V

150 Cel

Tin/Lead (Sn/Pb)

R-PDSO-F2

Not Qualified

7.8 pF

7 %

10 V

e0

SILICON

2.4

JDV2S40FS

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

R-PDSO-F2

4.35 pF

8.05 %

SILICON

2.3

1SV161

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

.01 uA

1

28 V

SMALL OUTLINE

125 Cel

Tin/Lead (Sn/Pb)

R-PDSO-F2

Not Qualified

SMALL TRACKING ERROR, 2.5% MATCHED SETS ARE AVAILABLE

30 V

e0

SILICON

9.5

JDV2S36E

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

125 Cel

R-PDSO-F2

Not Qualified

46.75 pF

5.88 %

10 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

6.3

JDV2S19FS

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

10 V

150 Cel

TIN LEAD

R-PDSO-F2

Not Qualified

3.665 pF

5.59 %

e0

SILICON

1.74

1SV323

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

10 V

125 Cel

R-PDSO-F2

Not Qualified

10 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

4

JDV2S71E

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

150 Cel

TIN LEAD

R-PDSO-F2

Not Qualified

9.09 %

e0

SILICON

10

1SV331

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

10 V

125 Cel

TIN LEAD

R-PDSO-F2

Not Qualified

18 pF

5.56 %

e0

SILICON

3.5

1SV314

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

10 V

125 Cel

R-PDSO-F2

Not Qualified

7.85 pF

7.01 %

NOT SPECIFIED

NOT SPECIFIED

SILICON

2.4

JDV2S29FS

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

10 V

150 Cel

R-PDSO-F2

Not Qualified

3.75 %

NOT SPECIFIED

NOT SPECIFIED

SILICON

2.73

1SV323,H3F(B

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

VERY HIGH FREQUENCY

.003 uA

1

10 V

SMALL OUTLINE

10 V

125 Cel

R-PDSO-F2

28 pF

5.36 %

10 V

SILICON

4

1SV305,L3F(T

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

R-PDSO-F2

18.3 pF

5.46 %

SILICON

2.8

1SV280

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

.003 uA

1

15 V

SMALL OUTLINE

Varactors

15 V

125 Cel

R-PDSO-F2

Not Qualified

4.25 pF

10.59 %

15 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

2

JDV4P08T

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

ULTRA HIGH FREQUENCY

2

SMALL OUTLINE

Varactors

10 V

150 Cel

TIN LEAD

R-PDSO-F4

Not Qualified

18.3 pF

5.46 %

e0

SILICON

2.8

JDV2S28FS

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

10 V

150 Cel

TIN LEAD

R-PDSO-F2

Not Qualified

10.515 pF

3 %

10 V

e0

SILICON

2.08

1SV305,L3F(B

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

VERY HIGH FREQUENCY

.003 uA

1

10 V

SMALL OUTLINE

10 V

125 Cel

R-PDSO-F2

18.3 pF

5.46 %

10 V

SILICON

2.8

JDV2S26FS

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

10 V

150 Cel

R-PDSO-F2

Not Qualified

3.03 %

NOT SPECIFIED

NOT SPECIFIED

SILICON

2.82

1SV279

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.003 uA

1

15 V

SMALL OUTLINE

Varactors

15 V

125 Cel

R-PDSO-F2

Not Qualified

15 pF

6.67 %

15 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

2

1SV226

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

.01 uA

1

28 V

SMALL OUTLINE

125 Cel

R-PDSO-F2

Not Qualified

45 pF

SMALL TRACKING ERROR, 2.5% MATCHED SETS ARE AVAILABLE

30 V

SILICON

14

JDV2S02E

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

10 V

TIN LEAD

R-PDSO-F2

Not Qualified

2.05 pF

12.2 %

e0

SILICON

1.8

JDV2S01E

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

10 V

125 Cel

TIN LEAD

R-PDSO-F2

Not Qualified

3.15 pF

9.52 %

e0

SILICON

1.8

JDV2S10T

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

10 V

125 Cel

Tin/Lead (Sn/Pb)

R-PDSO-F2

Not Qualified

10 V

e0

SILICON

2.4

1SV278

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.01 uA

1

28 V

SMALL OUTLINE

125 Cel

Tin/Lead (Sn/Pb)

R-PDSO-F2

Not Qualified

15.21 pF

2.5% MATCHED GROUP AVAILABLE, SMALL TRACKING ERROR

6.87 %

30 V

e0

SILICON

5.9

1SV291

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY TO KA BAND

.00000001 uA

1

28 V

SMALL OUTLINE

Varactors

35 V

125 Cel

Tin/Lead (Sn/Pb)

R-PDSO-F2

Not Qualified

4.95 pF

6% MATCHED GROUP AVAILABLE

15.15 %

30 V

e0

SILICON

7.3

1SV280H3F(T

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

ULTRA HIGH FREQUENCY

.003 uA

1

15 V

SMALL OUTLINE

15 V

125 Cel

R-PDSO-F2

4.25 pF

10.59 %

15 V

SILICON

2

1SV282

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.01 uA

1

32 V

SMALL OUTLINE

Varactors

36 V

125 Cel

R-PDSO-F2

Not Qualified

35.5 pF

2% MATCHED GROUP AVAILABLE, SMALL TRACKING ERROR

7.04 %

34 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

12

1SV305,H3F

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

VERY HIGH FREQUENCY

.003 uA

1

10 V

SMALL OUTLINE

10 V

125 Cel

R-PDSO-F2

18.3 pF

5.46 %

10 V

SILICON

2.8

1SV305,H3F(T

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

VERY HIGH FREQUENCY

.003 uA

1

10 V

SMALL OUTLINE

10 V

125 Cel

R-PDSO-F2

18.3 pF

5.46 %

10 V

SILICON

2.8

JDV2S13FS

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

10 V

150 Cel

TIN LEAD

R-PDSO-F2

Not Qualified

6.2 pF

8.06 %

e0

SILICON

2.7

JDV2S16FS

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

10 V

150 Cel

TIN LEAD

R-PDSO-F2

Not Qualified

3.59 pF

5.85 %

e0

SILICON

1.9

JDV2S07S

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

10 V

Tin/Lead (Sn/Pb)

R-PDSO-F2

Not Qualified

4.5 pF

10.11 %

e0

SILICON

2

JDV2S10FS

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

10 V

150 Cel

R-PDSO-F2

Not Qualified

7.85 pF

7.01 %

NOT SPECIFIED

NOT SPECIFIED

SILICON

2.4

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.