FLAT Varactor Diodes 577

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	Nominal Diode Capacitance	Additional Features	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
BB689-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V				R-PDSO-F2	1	Not Qualified	56.5 pF	CAPACITANCE MATCHED TO 2%	9.33 %					SILICON	14.5
BB689H7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			56.5 pF	CAPACITANCE MATCHED TO 2%	9.33 %					SILICON	14.5
BB664-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	35 V				R-PDSO-F2	1	Not Qualified	41.8 pF		6.59 %	30 V				SILICON	11
BB565-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V				R-PDSO-F2	1	Not Qualified	20 pF	LOW INDUCTANCE	7.5 %					SILICON	6.3
BB659C02VH7912XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			39 pF		7.01 %	35 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	9.5
BB659C02VH7908XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			39 pF		7.01 %	35 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	9.5
BB659CH7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			39 pF		7.01 %	35 V				SILICON	9.5
BB867-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	35 V			MATTE TIN	R-PDSO-F2	1	Not Qualified	8.7 pF	CAPACITANCE MATCHED TO 5 %, LOW INDUCTANCE	8.05 %		e3			SILICON	14
BB664E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	35 V				R-PDSO-F2		Not Qualified	41.8 pF		6.59 %	30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	11
BB659E6805	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			MATTE TIN	R-PDSO-F2		Not Qualified	38.3 pF	LOW INDUCTANCE	2.872 %		e3			SILICON	9.8
BB66402VH7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			41.8 pF		6.59 %	30 V				SILICON	11
BB659H7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			38.3 pF	LOW INDUCTANCE	5.26 %	30 V				SILICON	9.8
BB56502VH7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			20 pF	LOW INDUCTANCE	7.5 %					SILICON	6.3
BB679-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	30 V				R-PDSO-F2	1	Not Qualified	47.5 pF		8.42 %					SILICON	12
BB659C-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	35 V				R-PDSO-F2	1	Not Qualified	39 pF		7.01 %	35 V				SILICON	9.5
BB857	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	35 V				R-PDSO-F2	1	Not Qualified	6.6 pF		9.09 %					SILICON	10.2
BB68902VH7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			56.5 pF	CAPACITANCE MATCHED TO 2%	9.33 %					SILICON	14.5
BB565H7908XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			20 pF	LOW INDUCTANCE	7.5 %			NOT SPECIFIED	NOT SPECIFIED	SILICON	6.3
BB857-H7902	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ABRUPT			1		SMALL OUTLINE	Varactors	35 V	150 Cel	-55 Cel	MATTE TIN	R-PDSO-F2	1		6.6 pF		9.09 %		e3		260	SILICON	9.7
BB659	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V				R-PDSO-F2	1	Not Qualified	38.3 pF	LOW INDUCTANCE	5.26 %	30 V				SILICON	9.8
BB565H7903XTMA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			20 pF	LOW INDUCTANCE	7.5 %			NOT SPECIFIED	NOT SPECIFIED	SILICON	6.3
BB66402VE7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			41.8 pF		6.59 %	30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	11
BB659C	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V				R-PDSO-F2	1	Not Qualified	39 pF		7.01 %	35 V				SILICON	9.5
BB689H7908XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			56.5 pF	CAPACITANCE MATCHED TO 2%	9.33 %			NOT SPECIFIED	NOT SPECIFIED	SILICON	14.5
BB857E7902XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	35 V				R-PDSO-F2		Not Qualified	6.6 pF		9.09 %			NOT SPECIFIED	NOT SPECIFIED	SILICON	10.2
BB68902VH7908XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			56.5 pF	CAPACITANCE MATCHED TO 2%	9.33 %			NOT SPECIFIED	NOT SPECIFIED	SILICON	14.5
BB664H7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			41.8 pF		6.59 %	30 V				SILICON	11
BB664-02VE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	35 V				R-PDSO-F2		Not Qualified	41.8 pF		6.59 %	30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	11
BBY55-02WE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	16 V			MATTE TIN	R-PDSO-F2	1	Not Qualified	18.6 pF		5.66 %	16 V	e3		260	SILICON	2
BBY51-02W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	7 V				R-PDSO-F2	1	Not Qualified	5.4 pF	LOW INDUCTANCE	6.48 %	7 V				SILICON	1.55
BBY55-02WE6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	16 V				R-PDSO-F2		Not Qualified	18.6 pF		5.66 %	16 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	2
BBY51-02WE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	7 V			MATTE TIN	R-PDSO-F2	1	Not Qualified	5.4 pF		6.48 %	7 V	e3		260	SILICON	1.55
BBY57-02W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	10 V			MATTE TIN	R-PDSO-F2	1	Not Qualified	17.5 pF	LOW INDUCTANCE	5.98 %	10 V	e3			SILICON	3
BBY51-02WE6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	7 V				R-PDSO-F2		Not Qualified	5.4 pF		6.48 %	7 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	1.55
BBY58-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	10 V			TIN	R-PDSO-F2	1	Not Qualified	18.3 pF		4.89 %	10 V	e3			SILICON	1.15
BBY5502WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			18.6 pF	LOW INDUCTANCE	5.66 %	16 V				SILICON	2
BBY59-02VE6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	15 V			MATTE TIN	R-PDSO-F2		Not Qualified	27.8 pF		4.32 %	15 V	e3			SILICON	3.4
BBY59-02VE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	15 V			MATTE TIN	R-PDSO-F2	1	Not Qualified	27.8 pF		4.32 %	15 V	e3		260	SILICON	3.4
BBY66-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors				TIN	R-PDSO-F2	1	Not Qualified	68.7 pF		4 %	12 V	e3			SILICON	5
BB555-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	35 V				R-PDSO-F2	1	Not Qualified	18.7 pF	LOW INDUCTANCE	6.67 %	30 V				SILICON	6
BBY56-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ABRUPT	ULTRA HIGH FREQUENCY	.005 uA	1	6 V	SMALL OUTLINE		10 V	150 Cel	-55 Cel		R-PDSO-F2			40 pF					NOT SPECIFIED	NOT SPECIFIED	SILICON	2.15
BBY65-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	15 V			TIN	R-PDSO-F2	1	Not Qualified	29.5 pF		4.41 %	15 V	e3			SILICON	10
BBY5802WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			18.3 pF	LOW INDUCTANCE	4.89 %	10 V				SILICON	1.15
BBY51-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY	.01 uA	1	6 V	SMALL OUTLINE		7 V	125 Cel	-55 Cel		R-PDSO-F2			5.4 pF					NOT SPECIFIED	NOT SPECIFIED	SILICON	1.55
BBY55-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	16 V			Matte Tin (Sn)	R-PDSO-F2	1	Not Qualified	18.6 pF		5.66 %	16 V	e3			SILICON	2
BBY53-02W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	6 V	125 Cel	-55 Cel		R-PDSO-F2	1	Not Qualified	5.3 pF		9.43 %	6 V				SILICON	1.8
BBY57-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	10 V			TIN	R-PDSO-F2	1	Not Qualified	17.5 pF		5.98 %	10 V	e3			SILICON	3
BBY5602WE6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE						R-PDSO-F2			40 pF		7.5 %	10 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	2.15

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.