FLAT Varactor Diodes 577

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	No. of Elements	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio	Reference Standard
BBY58-02V-E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	10 V	150 Cel	-55 Cel		R-PDSO-F2	1			18.3 pF		4.89 %	10 V			260	SILICON	1.15	AEC-Q101
BBY5102WE6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE						R-PDSO-F2				5.4 pF		6.48 %	7 V				SILICON	1.55
BB55502VE7902XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY	1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				18.7 pF	LOW INDUCTANCE	6.67 %	30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	6
BBY65-02VE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	15 V			MATTE TIN	R-PDSO-F2	1	Not Qualified		29.5 pF		4.41 %	15 V	e3		260	SILICON	10
BBY55-02W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	16 V				R-PDSO-F2	1	Not Qualified		18.6 pF	LOW INDUCTANCE	5.66 %	16 V				SILICON	2
BBY55-02VE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	16 V			MATTE TIN	R-PDSO-F2	1	Not Qualified		18.6 pF		5.66 %	16 V	e3		260	SILICON	2
BB55502VH7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY	1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				18.7 pF	LOW INDUCTANCE	6.67 %	30 V				SILICON	6
BBY55-02V-H6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY	1	SMALL OUTLINE	Varactors	16 V	150 Cel	-55 Cel	MATTE TIN	R-PDSO-F2	1			18.6 pF		5.66 %	16 V	e3		260	SILICON	2
BBY56-02W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE			1	SMALL OUTLINE	Varactors	10 V				R-PDSO-F2	1	Not Qualified		40 pF	LOW INDUCTANCE	7.5 %					SILICON	2.15
BBY6502VE6327XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				29.5 pF		4.41 %	15 V				SILICON	10
BBY59-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	15 V			MATTE TIN	R-PDSO-F2	1	Not Qualified		27.8 pF		4.32 %	15 V	e3			SILICON	3.4
BB555H7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY	1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				18.7 pF	LOW INDUCTANCE	6.67 %	30 V				SILICON	6
BBY65-02VE6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	15 V				R-PDSO-F2		Not Qualified		29.5 pF		4.41 %	15 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	10
BBY57-02WH6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	10 V			MATTE TIN	R-PDSO-F2	1	Not Qualified		17.5 pF		5.98 %	10 V	e3		260	SILICON	3
BBY53-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	6 V	125 Cel	-55 Cel	TIN	R-PDSO-F2	1	Not Qualified		5.3 pF		9.43 %	6 V	e3			SILICON	1.8
BBY55-02VE6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	16 V				R-PDSO-F2		Not Qualified		18.6 pF		5.66 %	16 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	2
BBY52-02W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	7 V				R-PDSO-F2	1	Not Qualified		1.85 pF	LOW INDUCTANCE	22.22 %	7 V				SILICON	1.1
BBY5302VH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY	1	SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-F2	1			5.3 pF		9.43 %	6 V	e3			SILICON	1.8
BB555	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY	1	SMALL OUTLINE	Varactors	30 V				R-PDSO-F2	1	Not Qualified		18.7 pF	LOW INDUCTANCE	6.67 %	30 V				SILICON	6
BBY56-02WE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE			1	SMALL OUTLINE	Varactors	10 V				R-PDSO-F2	1	Not Qualified		40 pF		7.5 %	10 V			260	SILICON	2.15
BBY5502WE6327XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				18.6 pF	LOW INDUCTANCE	5.66 %	16 V				SILICON	2
BBY53-02V-H6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY	1	SMALL OUTLINE	Varactors	6 V	125 Cel	-55 Cel		R-PDSO-F2	1			5.3 pF		9.43 %	6 V			260	SILICON	1.8
BBY5202WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				1.85 pF	LOW INDUCTANCE	22.22 %	7 V				SILICON	1.1
BBY5702VE6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE						R-PDSO-F2				17.5 pF		5.98 %	10 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	3
BBY58-02W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	10 V				R-PDSO-F2	1	Not Qualified		18.3 pF	LOW INDUCTANCE	4.89 %	10 V				SILICON	1.15
BBY57-02WE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	10 V				R-PDSO-F2	1	Not Qualified		17.5 pF		5.98 %	10 V			260	SILICON	3
BBY5302WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY	1	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-F2				5.3 pF		9.43 %	6 V				SILICON	1.8
BBY58-07F	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	4	YES	RECTANGULAR		PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS	HYPERABRUPT		2	SMALL OUTLINE						R-PDSO-F4		Not Qualified		18.3 pF	HIGH Q	4.89 %	10 V				SILICON	2.8
BBY5802VE6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				18.3 pF		4.89 %	10 V				SILICON	1.15
UZV933V2TC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	150	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE			125 Cel			R-PDSO-F2		Not Qualified	.25 W	22.5 pF	LOW NOISE	20 %	12 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
UZV932V2TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE			125 Cel			R-PDSO-F2		Not Qualified	.25 W	9.5 pF	LOW NOISE	10.53 %	12 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
ZV953V2TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	12 V			MATTE TIN	R-PDSO-F2	1	Not Qualified	.25 W	33.5 pF		10.45 %	12 V	e3	30	260	SILICON	2
UZV952V2TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	250	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE			85 Cel	-55 Cel		R-PDSO-F2		Not Qualified	.25 W	14.2 pF		10.56 %	12 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	2
UZV931V2TC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE			125 Cel			R-PDSO-F2		Not Qualified	.25 W	7.15 pF	LOW NOISE	9.09 %	12 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
ZV932V2TC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE			125 Cel			R-PDSO-F2		Not Qualified	.25 W	9.5 pF	LOW NOISE	10.53 %	12 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
UZV950V2TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	250	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE			85 Cel	-55 Cel		R-PDSO-F2		Not Qualified	.25 W	7.05 pF		10.64 %	12 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	2
ZV832BV2TC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	25 V			MATTE TIN	R-PDSO-F2	1	Not Qualified	.25 W	22 pF	LOW NOISE	5 %	25 V	e3	30	260	SILICON	5
ZV931V2TC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE			125 Cel			R-PDSO-F2		Not Qualified	.25 W	7.15 pF	LOW NOISE	9.09 %	12 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
UZV832BV2TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE						R-PDSO-F2		Not Qualified	.25 W	22 pF	LOW NOISE	5 %	25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	5
ZV933V2TC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	150	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE			125 Cel			R-PDSO-F2		Not Qualified	.25 W	22.5 pF	LOW NOISE	20 %	12 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
UZV932V2TC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE			125 Cel			R-PDSO-F2		Not Qualified	.25 W	9.5 pF	LOW NOISE	10.53 %	12 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
UZV831BV2TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE						R-PDSO-F2		Not Qualified	.25 W	15 pF	LOW NOISE	5 %	25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	4.5
UZV931V2TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE			125 Cel			R-PDSO-F2		Not Qualified	.25 W	7.15 pF	LOW NOISE	9.09 %	12 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
ZV952V2TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	250	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	12 V			MATTE TIN	R-PDSO-F2	1	Not Qualified	.25 W	14.2 pF		10.56 %	12 V	e3	30	260	SILICON	2
ZV932V2TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE			125 Cel			R-PDSO-F2		Not Qualified	.25 W	9.5 pF	LOW NOISE	10.53 %	12 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
UZV933V2TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	150	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE			125 Cel			R-PDSO-F2		Not Qualified	.25 W	22.5 pF	LOW NOISE	20 %	12 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
UZV953V2TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE			85 Cel	-55 Cel		R-PDSO-F2		Not Qualified	.25 W	33.5 pF		10.45 %	12 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	2
UZV831BV2TC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE						R-PDSO-F2		Not Qualified	.25 W	15 pF	LOW NOISE	5 %	25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	4.5

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.