DUAL Varactor Diodes 1,767

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  2. Varactor Diodes
Manufacturers
    • Api Technologies
    • Broadcom
    • Defense Logistics Agency
    • Diodes Incorporated
    • Infineon Technologies
    • M/a-com Technology Solutions
    • Microchip Technology
    • Microsemi
    • Motorola
    • NXP Semiconductors
    • Onsemi
    • Renesas Electronics
    • STMicroelectronics
    • Skyworks Solutions
    • TE Connectivity
    • Texas Instruments
    • Toshiba
Diode Type
    • VARIABLE CAPACITANCE DIODE
Terminal Position (1)
    • DUAL
    • AXIAL
    • BOTTOM
    • END
    • SINGLE
    • UNSPECIFIED
    • UPPER
Terminal Form
    • C BEND
    • FLAT
    • GULL WING
    • NO LEAD
    • THROUGH-HOLE
    • UNSPECIFIED
    • WIRE
    • WRAP AROUND
No. of Terminals
    • 1
    • 2
    • 3
    • 4
    • 6
    • 8
Surface Mount
    • NO
    • YES
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Minimum Quality Factor
    • 10
    • 100
    • 1000
    • 133
    • 1400
    • 15
    • 150
    • 1500
    • 175
    • 190
    • 20
    • 200
    • 2000
    • 225
    • 2400
    • 25
    • 250
    • 280
    • 30
    • 300
    • 3000
    • 3200
    • 325
    • 33
    • 35
    • 350
    • 3500
    • 375
    • 400
    • 4000
    • 45
    • 450
    • 5
    • 50
    • 500
    • 550
    • 60
    • 600
    • 66
    • 70
    • 700
    • 75
    • 750
    • 80
    • 800
Package Body Material
    • CERAMIC, GLASS-SEALED
    • CERAMIC, METAL-SEALED COFIRED
    • GLASS
    • PLASTIC/EPOXY
    • UNSPECIFIED
Config
    • 2 BANKS, COMMON CATHODE, 2 ELEMENTS
    • COMMON ANODE, 2 ELEMENTS
    • COMMON CATHODE, 2 ELEMENTS
    • COMMON CATHODE, 3 ELEMENTS
    • COMPLEX
    • SEPARATE, 2 ELEMENTS
    • SEPARATE, 3 ELEMENTS
    • SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
    • SINGLE
Variable Capacitance Diode Classification
    • ABRUPT
    • HYPERABRUPT
Frequency Band
    • HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
    • KA BAND
    • L BAND
    • MEDIUM FREQUENCY
    • MILLIMETER WAVE BAND
    • S BAND
    • ULTRA HIGH FREQUENCY
    • ULTRA HIGH FREQUENCY TO KA BAND
    • ULTRA HIGH FREQUENCY TO L BAND
    • VERY HIGH FREQUENCY
    • VERY HIGH FREQUENCY TO KU BAND
    • VERY HIGH FREQUENCY TO L BAND
    • VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
    • X BAND
Maximum Output Current
    • .1 A
Maximum Forward Voltage (VF)
    • .715 V
Maximum Reverse Recovery Time
    • .004 us
Maximum Reverse Current
    • .000000003 uA
    • .000000005 uA
    • .00000001 uA
    • .00000002 uA
    • .00000005 uA
    • .0000001 uA
    • .003 uA
    • .005 uA
    • .01 uA
    • .02 uA
    • .05 uA
    • .1 uA
    • .2 uA
    • .5 uA
    • 2 uA
No. of Elements
    • 1
    • 2
    • 3
    • 4
    • 5
Reverse Test Voltage
    • 10 V
    • 100 V
    • 12 V
    • 15 V
    • 16 V
    • 17.6 V
    • 19 V
    • 20 V
    • 25 V
    • 26 V
    • 28 V
    • 30 V
    • 32 V
    • 4 V
    • 40 V
    • 50 V
    • 55 V
    • 6 V
    • 60 V
    • 65 V
    • 8 V
    • 9 V
    • 90 V
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • IN-LINE
    • LONG FORM
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • Other Diodes
    • Rectifier Diodes
    • Signal Diodes
    • Varactors
Maximum Repetitive Peak Reverse Voltage
    • 10 V
    • 100 V
    • 12 V
    • 120 V
    • 13 V
    • 14 V
    • 140 V
    • 15 V
    • 16 V
    • 18 V
    • 20 V
    • 22 V
    • 25 V
    • 27 V
    • 28 V
    • 30 V
    • 32 V
    • 33 V
    • 34 V
    • 35 V
    • 36 V
    • 40 V
    • 48 V
    • 50 V
    • 55 V
    • 6 V
    • 60 V
    • 65 V
    • 7 V
    • 8 V
    • 85 V
    • 9 V
    • 90 V
Maximum Operating Temperature
    • 100 Cel
    • 125 Cel
    • 150 Cel
    • 175 Cel
    • 200 Cel
    • 85 Cel
Minimum Operating Temperature
    • -55 Cel
    • -65 Cel
Terminal Finish
    • MATTE TIN
    • Matte Tin (Sn)
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Bismuth (Sn/Bi)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
    • Tin/Lead (Sn80Pb20)
    • Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)
JESD-30 Code
    • O-CEMW-N2
    • O-GALF-W2
    • O-LALF-W2
    • O-LELF-R2
    • O-PBCY-T2
    • O-PBCY-T3
    • O-PBCY-W2
    • O-PBCY-W3
    • O-XALF-W2
    • O-XAMW-G2
    • O-XBCY-T3
    • O-XEMW-N2
    • R-CBCC-N2
    • R-CBCC-N3
    • R-PBCC-N2
    • R-PBCC-N3
    • R-PDIP-T2
    • R-PDSO-F2
    • R-PDSO-F3
    • R-PDSO-F4
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G6
    • R-PDSO-G8
    • R-PDSO-N2
    • R-PDSO-X
    • R-PSIP-T2
    • R-PSIP-T3
    • R-PSIP-W2
    • R-XBCC-N2
    • R-XBCC-N3
    • R-XBCC-N4
    • R-XDSO-F2
    • R-XDSO-N2
    • S-XUUC-N1
    • X-XXMW-F2
Moisture Sensitivity Level (MSL)
    • 1
    • NOT APPLICABLE
Case Connection
    • CATHODE
    • ISOLATED
Qualification
    • Not Qualified
Maximum Power Dissipation
    • .1 W
    • .15 W
    • .2 W
    • .225 W
    • .25 W
    • .28 W
    • .3 W
    • .33 W
    • .4 W
    • .5 W
    • .75 W
    • .8 W
Nominal Diode Capacitance
    • .1 pF
    • .225 pF
    • .3 pF
    • .4 pF
    • .45 pF
    • .5 pF
    • .6 pF
    • .75 pF
    • .8 pF
    • .86 pF
    • .9 pF
    • 1 pF
    • 1.01 pF
    • 1.055 pF
    • 1.1 pF
    • 1.2 pF
    • 1.3 pF
    • 1.305 pF
    • 1.36 pF
    • 1.37 pF
    • 1.5 pF
    • 1.575 pF
    • 1.58 pF
    • 1.8 pF
    • 1.85 pF
    • 1.86 pF
    • 1.89 pF
    • 1.9 pF
    • 1.95 pF
    • 10 pF
    • 10.1 pF
    • 10.25 pF
    • 10.4 pF
    • 10.45 pF
    • 10.5 pF
    • 10.515 pF
    • 10.55 pF
    • 100 pF
    • 102 pF
    • 11 pF
    • 11.5 pF
    • 11.6 pF
    • 12 pF
    • 12.5 pF
    • 12.7 pF
    • 120 pF
    • 13 pF
    • 13.25 pF
    • 13.8 pF
    • 14 pF
    • 14.16 pF
    • 14.2 pF
    • 14.5 pF
    • 14.8 pF
    • 14.95 pF
    • 15 pF
    • 15.2 pF
    • 15.21 pF
    • 15.29 pF
    • 15.3 pF
    • 15.75 pF
    • 15.8 pF
    • 15.81 pF
    • 16 pF
    • 16.25 pF
    • 16.5 pF
    • 17 pF
    • 17.5 pF
    • 17.75 pF
    • 175 pF
    • 18 pF
    • 18.22 pF
    • 18.3 pF
    • 18.5 pF
    • 18.6 pF
    • 18.7 pF
    • 18.75 pF
    • 19 pF
    • 19.1 pF
    • 19.11 pF
    • 19.23 pF
    • 19.25 pF
    • 19.3 pF
    • 19.7 pF
    • 19.74 pF
    • 19.75 pF
    • 19.9 pF
    • 19.92 pF
    • 2 pF
    • 2.05 pF
    • 2.1 pF
    • 2.11 pF
    • 2.145 pF
    • 2.15 pF
    • 2.2 pF
    • 2.3 pF
    • 2.5 pF
    • 2.525 pF
    • 2.6 pF
    • 2.7 pF
    • 2.75 pF
    • 2.85 pF
    • 2.88 pF
    • 20 pF
    • 20.2 pF
    • 20.25 pF
    • 21.26 pF
    • 22 pF
    • 22.5 pF
    • 22.75 pF
    • 23 pF
    • 23.6 pF
    • 24 pF
    • 24.15 pF
    • 25 pF
    • 250 pF
    • 26 pF
    • 26.75 pF
    • 27 pF
    • 27.3 pF
    • 27.75 pF
    • 27.8 pF
    • 28 pF
    • 28.19 pF
    • 28.5 pF
    • 29 pF
    • 29.3 pF
    • 29.5 pF
    • 29.75 pF
    • 3 pF
    • 3.05 pF
    • 3.1 pF
    • 3.15 pF
    • 3.3 pF
    • 3.31 pF
    • 3.3135 pF
    • 3.34 pF
    • 3.4 pF
    • 3.43 pF
    • 3.5 pF
    • 3.59 pF
    • 3.665 pF
    • 3.73 pF
    • 3.8 pF
    • 3.85 pF
    • 3.93 pF
    • 30 pF
    • 30.1 pF
    • 30.3 pF
    • 30.5 pF
    • 30.85 pF
    • 31 pF
    • 31.25 pF
    • 31.5 pF
    • 31.75 pF
    • 32 pF
    • 33 pF
    • 33.5 pF
    • 34.85 pF
    • 35 pF
    • 35.22 pF
    • 35.5 pF
    • 36 pF
    • 36.09 pF
    • 36.99 pF
    • 360 pF
    • 37 pF
    • 37.25 pF
    • 37.91 pF
    • 38 pF
    • 38.3 pF
    • 38.5 pF
    • 38.65 pF
    • 38.84 pF
    • 388.1 pF
    • 39 pF
    • 39.3 pF
    • 39.5 pF
    • 4 pF
    • 4.2 pF
    • 4.25 pF
    • 4.35 pF
    • 4.4 pF
    • 4.45 pF
    • 4.5 pF
    • 4.6 pF
    • 4.65 pF
    • 4.7 pF
    • 4.75 pF
    • 4.86 pF
    • 4.9 pF
    • 4.95 pF
    • 40 pF
    • 40.65 pF
    • 41 pF
    • 41.8 pF
    • 42 pF
    • 42.75 pF
    • 427.5 pF
    • 43 pF
    • 43.25 pF
    • 43.45 pF
    • 43.75 pF
    • 430 pF
    • 435 pF
    • 439 pF
    • 44.25 pF
    • 44.75 pF
    • 440 pF
    • 45 pF
    • 45.25 pF
    • 45.55 pF
    • 45.75 pF
    • 450 pF
    • 459 pF
    • 46 pF
    • 46.1 pF
    • 46.75 pF
    • 460 pF
    • 461 pF
    • 462.8 pF
    • 47 pF
    • 47.365 pF
    • 47.5 pF
    • 470 pF
    • 473.05 pF
    • 48 pF
    • 485 pF
    • 49.5 pF
    • 497.5 pF
    • 5 pF
    • 5.3 pF
    • 5.4 pF
    • 5.6 pF
    • 50 pF
    • 500 pF
    • 503 pF
    • 51 pF
    • 52 pF
    • 52.5 pF
    • 524.6 pF
    • 53 pF
    • 55 pF
    • 550 pF
    • 56 pF
    • 56.5 pF
    • 57 pF
    • 58 pF
    • 6 pF
    • 6.19 pF
    • 6.2 pF
    • 6.5 pF
    • 6.6 pF
    • 6.7 pF
    • 6.8 pF
    • 6.82 pF
    • 6.9 pF
    • 60 pF
    • 62.39 pF
    • 64 pF
    • 67.5 pF
    • 68 pF
    • 68.7 pF
    • 69 pF
    • 7 pF
    • 7.05 pF
    • 7.15 pF
    • 7.37 pF
    • 7.4 pF
    • 7.45 pF
    • 7.5 pF
    • 7.65 pF
    • 7.8 pF
    • 7.85 pF
    • 70 pF
    • 76.75 pF
    • 8.2 pF
    • 8.31 pF
    • 8.6 pF
    • 8.7 pF
    • 8.8 pF
    • 81 pF
    • 82 pF
    • 9 pF
    • 9.1 pF
    • 9.3 pF
    • 9.5 pF
    • 95 pF
    • 97.095 pF
Additional Features
    • 0.5% MATCHED SETS OF 4 DIODES AND 2% MATCHED SETS OF 15 DIODES ARE AVAILABLE
    • 0.7% MATCHED SETS OF 4 DIODES AND 2% MATCHED SETS OF 15 DIODES ARE AVAILABLE
    • 1% MATCHED SETS OF 4 DIODES AND 2% MATCHED SETS OF 15 DIODES ARE AVAILABLE
    • 1% MATCHING GUARANTEED
    • 1.5% MATCHED SETS AVAILABLE
    • 1.6% MATCHED SETS AVAILABLE
    • 2% MATCHED GROUP AVAILABLE, SMALL TRACKING ERROR
    • 2% MATCHED SETS AVAILABLE
    • 2% MATCHED SETS OF 10 DIODES ARE AVAILABLE
    • 2% MATCHED SETS OF 15 DIODES ARE AVAILABLE
    • 2% MATCHED SETS OF 5 DIODES ARE AVAILABLE
    • 2% MATCHED SETS OF 8 DIODES ARE AVAILABLE
    • 2.5% MATCHED GROUP AVAILABLE
    • 2.5% MATCHED GROUP AVAILABLE, SMALL TRACKING ERROR
    • 2.5% MATCHED SETS ARE AVAILABLE
    • 3% MATCHED GROUP AVAILABLE
    • 3% MATCHED SETS ARE AVAILABLE
    • 3% MATCHED SETS ARE AVAILABLE ,3% MATCHED SET OF THREE DIODES
    • 3% MATCHED SETS ARE AVAILABLE, 3% MATCHED SET OF TWO DIODES
    • 3% MATCHED SETS AVAILABLE
    • 6% MATCHED GROUP AVAILABLE
    • 6% MATCHED GROUP AVAILABLE, SMALL TRACKING ERROR
    • 6% MATCHED SETS ARE AVAILABLE, SMALL TRACKING ERROR
    • AVAILABLE IN MATCHED SETS
    • CAPACITANCE MATCHED TO 1.5%
    • CAPACITANCE MATCHED TO 2%
    • CAPACITANCE MATCHED TO 2.5%
    • CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES
    • CAPACITANCE MATCHED TO 2.5% FOR FOUR DEVICES
    • CAPACITANCE MATCHED TO 2.5% FOR THREE DEVICES
    • CAPACITANCE MATCHED TO 2.5% FOR TWO DEVICES
    • CAPACITANCE MATCHED TO 3%
    • CAPACITANCE MATCHED TO 3% FOR ANY TWO DIODES
    • CAPACITANCE MATCHED TO 5 %, LOW INDUCTANCE
    • CAPACITANCE MATCHED TO 6%, SMALL TRACKING ERROR
    • EUROPEAN PART NUMBER
    • EXCELLENT MATCHING TO 1.6% DMA
    • EXCELLENT MATCHING TO 2% DMA
    • EXCELLENT MATCHING TO 2% DMA, HIGH LINEARITY, LOW SERIES RESISTANCE
    • HIGH Q
    • HIGH Q, 1% MATCHING GUARANTEED
    • HIGH Q, HIGH RELIABILITY
    • HIGH Q, LOW INDUCTANCE
    • HIGH RELIABILITY
    • HIGH RELIABILITY, EUROPEAN PART NUMBER
    • HIGH RELIABILITY, LOW LEAKAGE CURRENT
    • LOW INDUCTANCE
    • LOW NOISE
    • MATCHED PAIR AVAILABLE
    • MATCHED TO 2.5%
    • MATCHED TO 3%
    • SMALL TRACKING ERROR
    • SMALL TRACKING ERROR, 2% MATCHED SETS ARE AVAILABLE
    • SMALL TRACKING ERROR, 2.5% MATCHED SETS ARE AVAILABLE
    • SMALL TRACKING ERROR, CAPACITANCE MATCHED TO 2%
    • SMALL TRACKING ERROR, CAPACITANCE MATCHED TO 2.5%
    • SUPER Q
JEDEC-95 Code
    • DO-204AA
    • DO-204AB
    • DO-34
    • DO-35
    • DO-7
    • TO-226AC
    • TO-236AB
    • TO-261AA
    • TO-92
Diode Cap Tolerance
    • .5 %
    • 1 %
    • 1.64 %
    • 1.68 %
    • 1.71 %
    • 1.75 %
    • 10 %
    • 10.06 %
    • 10.11 %
    • 10.14 %
    • 10.2 %
    • 10.26 %
    • 10.29 %
    • 10.34 %
    • 10.45 %
    • 10.53 %
    • 10.56 %
    • 10.59 %
    • 10.64 %
    • 10.67 %
    • 10.77 %
    • 10.81 %
    • 10.9 %
    • 11.1 %
    • 11.11 %
    • 11.36 %
    • 12.07 %
    • 12.09 %
    • 12.13 %
    • 12.2 %
    • 12.24 %
    • 12.82 %
    • 12.92 %
    • 13.04 %
    • 14.28 %
    • 14.62 %
    • 15 %
    • 15.09 %
    • 15.15 %
    • 15.78 %
    • 16.63 %
    • 16.639 %
    • 16.64 %
    • 16.66 %
    • 18.75 %
    • 2 %
    • 2.53 %
    • 2.66 %
    • 2.67 %
    • 2.69 %
    • 2.7 %
    • 2.76 %
    • 2.85 %
    • 2.86 %
    • 2.872 %
    • 2.93 %
    • 20 %
    • 20.75 %
    • 21.73 %
    • 22.22 %
    • 23.81 %
    • 25.93 %
    • 3 %
    • 3.01 %
    • 3.03 %
    • 3.04 %
    • 3.062 %
    • 3.13 %
    • 3.19 %
    • 3.22 %
    • 3.26 %
    • 3.3 %
    • 3.31 %
    • 3.35 %
    • 3.36 %
    • 3.47 %
    • 3.5 %
    • 3.52 %
    • 3.53 %
    • 3.7 %
    • 3.75 %
    • 3.89 %
    • 3.9 %
    • 3.91 %
    • 3.93 %
    • 3.94 %
    • 3.95 %
    • 30.23 %
    • 33.33 %
    • 36 %
    • 4 %
    • 4.08 %
    • 4.09 %
    • 4.32 %
    • 4.41 %
    • 4.42 %
    • 4.43 %
    • 4.47 %
    • 4.57 %
    • 4.62 %
    • 4.65 %
    • 4.66 %
    • 4.68 %
    • 4.69 %
    • 4.76 %
    • 4.79 %
    • 4.84 %
    • 4.89 %
    • 4.92 %
    • 5 %
    • 5.02 %
    • 5.08 %
    • 5.1 %
    • 5.18 %
    • 5.23 %
    • 5.26 %
    • 5.35 %
    • 5.351 %
    • 5.36 %
    • 5.45 %
    • 5.46 %
    • 5.49 %
    • 5.51 %
    • 5.53 %
    • 5.54 %
    • 5.56 %
    • 5.59 %
    • 5.6 %
    • 5.66 %
    • 5.75 %
    • 5.85 %
    • 5.88 %
    • 5.95 %
    • 5.98 %
    • 6 %
    • 6.15 %
    • 6.17 %
    • 6.21 %
    • 6.25 %
    • 6.33 %
    • 6.35 %
    • 6.36 %
    • 6.45 %
    • 6.451 %
    • 6.48 %
    • 6.52 %
    • 6.54 %
    • 6.55 %
    • 6.56 %
    • 6.59 %
    • 6.67 %
    • 6.73 %
    • 6.81 %
    • 6.87 %
    • 6.89 %
    • 6.9 %
    • 6.93 %
    • 6.94 %
    • 7 %
    • 7.01 %
    • 7.04 %
    • 7.08 %
    • 7.09 %
    • 7.14 %
    • 7.25 %
    • 7.33 %
    • 7.43 %
    • 7.46 %
    • 7.5 %
    • 7.59 %
    • 7.6 %
    • 7.604 %
    • 7.64 %
    • 7.69 %
    • 7.7 %
    • 7.71 %
    • 7.72 %
    • 7.75 %
    • 7.76 %
    • 7.848 %
    • 7.85 %
    • 7.937 %
    • 7.94 %
    • 8 %
    • 8.05 %
    • 8.06 %
    • 8.09 %
    • 8.11 %
    • 8.33 %
    • 8.42 %
    • 8.43 %
    • 8.59 %
    • 8.62 %
    • 8.67 %
    • 8.72 %
    • 8.76 %
    • 8.77 %
    • 8.82 %
    • 9.07 %
    • 9.09 %
    • 9.15 %
    • 9.16 %
    • 9.21 %
    • 9.29 %
    • 9.3 %
    • 9.33 %
    • 9.39 %
    • 9.43 %
    • 9.52 %
    • 9.523 %
    • 9.68 %
    • 9.8 %
    • 9.85 %
Minimum Breakdown Voltage
    • 10 V
    • 110 V
    • 12 V
    • 13 V
    • 14 V
    • 15 V
    • 16 V
    • 17 V
    • 18 V
    • 20 V
    • 22 V
    • 25 V
    • 27 V
    • 28 V
    • 30 V
    • 32 V
    • 33 V
    • 34 V
    • 35 V
    • 44 V
    • 45 V
    • 50 V
    • 55 V
    • 6 V
    • 60 V
    • 61 V
    • 65 V
    • 66 V
    • 7 V
    • 72 V
    • 85 V
    • 90 V
    • 99 V
Maximum Non Repetitive Peak Forward Current
    • 4.5 A
JESD-609 Code
    • e0
    • e1
    • e2
    • e3
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 20
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 220
    • 235
    • 240
    • 245
    • 260
    • NOT SPECIFIED
Diode Element Material
    • GALLIUM ARSENIDE
    • SILICON
Minimum Diode Capacitance Ratio
    • 1.1
    • 1.15
    • 1.2
    • 1.25
    • 1.3
    • 1.45
    • 1.5
    • 1.55
    • 1.6
    • 1.65
    • 1.68
    • 1.6929
    • 1.7
    • 1.72
    • 1.73
    • 1.74
    • 1.75
    • 1.8
    • 1.81
    • 1.88
    • 1.9
    • 10
    • 10.2
    • 10.3
    • 10.6
    • 10.7
    • 10.8
    • 11
    • 11.5
    • 12
    • 12.5
    • 13
    • 13.4
    • 13.5
    • 13.7
    • 14
    • 14.5
    • 14.8
    • 14.85
    • 15
    • 15.5
    • 16
    • 16.2
    • 17
    • 17.5
    • 17.7
    • 18.5
    • 19.5
    • 2
    • 2.02
    • 2.05
    • 2.08
    • 2.09
    • 2.1
    • 2.13
    • 2.15
    • 2.1924
    • 2.2
    • 2.24
    • 2.26
    • 2.28
    • 2.3
    • 2.32
    • 2.33
    • 2.34
    • 2.35
    • 2.36
    • 2.37
    • 2.38
    • 2.39
    • 2.4
    • 2.42
    • 2.43
    • 2.5
    • 2.55
    • 2.6
    • 2.62
    • 2.7
    • 2.73
    • 2.77
    • 2.79
    • 2.8
    • 2.81
    • 2.82
    • 2.83
    • 2.9
    • 2.941
    • 20
    • 20.6
    • 21
    • 22.5
    • 23
    • 23.3
    • 24
    • 3
    • 3.091
    • 3.1
    • 3.2
    • 3.25
    • 3.3
    • 3.4
    • 3.5
    • 3.55
    • 3.625
    • 3.7
    • 3.75
    • 3.8
    • 35
    • 4
    • 4.1
    • 4.2
    • 4.3
    • 4.45
    • 4.5
    • 4.6
    • 4.9
    • 5
    • 5.6
    • 5.9
    • 6
    • 6.2
    • 6.3
    • 7
    • 7.1
    • 7.12
    • 7.3
    • 7.6
    • 7.8
    • 8
    • 8.2
    • 8.45
    • 8.8
    • 8.9
    • 9
    • 9.5
    • 9.7
    • 9.8
Reference Standard
    • AEC-Q101
    • IEC-60134
    • MIL-19500/436A
Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Config Variable Capacitance Diode Classification Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Reverse Recovery Time Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features JEDEC-95 Code Diode Cap Tolerance Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

BB145B,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

8 V

150 Cel

-55 Cel

TIN

R-PDSO-F2

1

Not Qualified

6.8 pF

5.88 %

6 V

e3

30

260

SILICON

2.2

IEC-60134

BB804GT/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY

2

SMALL OUTLINE

R-PDSO-G3

Not Qualified

45.75 pF

1.64 %

18 V

SILICON

1.65

BB150-T

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

R-PDSO-G2

Not Qualified

42 pF

9.52 %

SILICON

14

934050110115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-G2

1

Not Qualified

16 pF

10 %

e3

30

260

SILICON

2.7

BB132

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

TIN

R-PDSO-G2

Not Qualified

2.5 pF

1% MATCHED SETS OF 4 DIODES AND 2% MATCHED SETS OF 15 DIODES ARE AVAILABLE

2.53 %

30 V

e3

SILICON

24

934056920135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

85 Cel

-55 Cel

TIN

R-PDSO-F2

1

Not Qualified

30.85 pF

8.59 %

e3

30

260

SILICON

2.5

BB158

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

TIN

R-PDSO-G2

Not Qualified

39.3 pF

6.36 %

30 V

e3

SILICON

14.5

BB159/T3

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

TIN

R-PDSO-G2

Not Qualified

18.75 pF

4 %

e3

SILICON

8.2

BB901-T

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

.01 uA

1

28 V

SMALL OUTLINE

85 Cel

R-PDSO-G3

Not Qualified

1.055 pF

30 V

SILICON

12

BB156,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

10 V

125 Cel

-55 Cel

Tin (Sn)

R-PDSO-G2

1

Not Qualified

16 pF

10 %

e3

30

260

SILICON

2.7

BBY31212

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

R-PDSO-G3

Not Qualified

16.5 pF

SILICON

BB142

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

8 V

TIN

R-PDSO-F2

Not Qualified

4.6 pF

e3

SILICON

2

934018030135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

TIN

R-PDSO-G2

Not Qualified

19.25 pF

9.09 %

e3

SILICON

8.9

934019370115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

TIN

R-PDSO-G2

1

Not Qualified

19.25 pF

9.09 %

e3

SILICON

8.9

BB146

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

R-PDSO-G2

Not Qualified

39 pF

EXCELLENT MATCHING TO 1.6% DMA

10.26 %

SILICON

17.5

BBY42TRL13

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

R-PDSO-G3

Not Qualified

SILICON

12

BB619-T

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

125 Cel

-55 Cel

R-PDSO-G2

Not Qualified

37.25 pF

CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES

10.06 %

30 V

SILICON

12.5

BB146T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

R-PDSO-G2

Not Qualified

39 pF

EXCELLENT MATCHING TO 1.6% DMA

10.26 %

SILICON

17.5

BBY31

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

.01 uA

1

28 V

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

TIN

R-PDSO-G3

Not Qualified

16.5 pF

11.11 %

30 V

e3

SILICON

BB151T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

TIN

R-PDSO-G2

Not Qualified

19.1 pF

e3

SILICON

1.45

BB804R235

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY

.02 uA

2

16 V

SMALL OUTLINE

125 Cel

-55 Cel

R-PDSO-G3

Not Qualified

.25 W

18 V

SILICON

1.65

BB804,215

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY

.02 uA

2

16 V

SMALL OUTLINE

Varactors

18 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-G3

Not Qualified

44.25 pF

TO-236AB

5.08 %

18 V

e3

260

SILICON

1.65

934042930115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.01 uA

1

10 V

SMALL OUTLINE

125 Cel

-55 Cel

R-PDSO-G2

Not Qualified

.2 W

10 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

1.6929

BB804W

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY

2

SMALL OUTLINE

R-PDSO-G3

Not Qualified

44.75 pF

1.68 %

18 V

SILICON

1.65

BB149T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-G2

Not Qualified

18.75 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

4 %

30 V

e3

260

SILICON

8.2

BBY39T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

ULTRA HIGH FREQUENCY

.01 uA

2

28 V

SMALL OUTLINE

85 Cel

R-PDSO-G3

Not Qualified

16.5 pF

MATCHED PAIR AVAILABLE

TO-236AB

30 V

SILICON

8

BB199

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

150 Cel

-65 Cel

TIN

R-PDSO-F2

.3 W

39.5 pF

7.59 %

e3

SILICON

2.8

BB901

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

.00000001 uA

1

28 V

SMALL OUTLINE

Varactors

28 V

85 Cel

R-PDSO-G3

Not Qualified

1.055 pF

30 V

SILICON

12

BB804Y235

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY

.02 uA

2

16 V

SMALL OUTLINE

125 Cel

-55 Cel

R-PDSO-G3

Not Qualified

.25 W

18 V

SILICON

1.65

934055438335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

Tin (Sn)

R-PDSO-F2

1

Not Qualified

12.5 pF

36 %

e3

30

260

SILICON

12

BB198

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

150 Cel

-65 Cel

TIN

R-PDSO-F2

.3 W

26.75 pF

6.54 %

20 V

e3

SILICON

4.3

BB208-03,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

10 V

125 Cel

-55 Cel

TIN

R-PDSO-G2

1

Not Qualified

10.1 pF

e3

30

260

SILICON

3.7

934055721335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

R-PDSO-F2

Not Qualified

50 pF

6 %

34 V

SILICON

17

BBY39212

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

ULTRA HIGH FREQUENCY

2

SMALL OUTLINE

R-PDSO-G3

Not Qualified

16.5 pF

SILICON

8

BB147T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

TIN

R-PDSO-G2

Not Qualified

102 pF

2% MATCHED SETS OF 8 DIODES ARE AVAILABLE

9.8 %

e3

SILICON

35

BB804TRL13

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

SMALL OUTLINE

R-PDSO-G3

Not Qualified

SILICON

1.65

934047500135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

57 pF

8.77 %

32 V

e3

SILICON

20.6

BB159-T

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

R-PDSO-G2

Not Qualified

18.75 pF

4 %

SILICON

8.2

BB202

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

6 V

85 Cel

-55 Cel

Tin (Sn)

R-PDSO-F2

1

Not Qualified

8.59 %

e3

30

260

SILICON

2.5

BB804-1

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY

.02 uA

2

16 V

SMALL OUTLINE

100 Cel

R-PDSO-G3

Not Qualified

SILICON

1.65

BB148/T3

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-G2

Not Qualified

39.3 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

30 V

e3

SILICON

14.5

BB149

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

TIN

R-PDSO-G2

Not Qualified

18.75 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

4 %

30 V

e3

SILICON

8.2

934018010115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

TIN

R-PDSO-G2

Not Qualified

67.5 pF

11.11 %

e3

SILICON

24

BB804R212

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY

.02 uA

2

16 V

SMALL OUTLINE

125 Cel

-55 Cel

R-PDSO-G3

Not Qualified

.25 W

18 V

SILICON

1.65

934050190335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

38.5 pF

10 %

32 V

e3

SILICON

13.5

BB202,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

6 V

85 Cel

-55 Cel

TIN

R-PDSO-F2

1

Not Qualified

8.59 %

e3

30

260

SILICON

2.5

BB172X

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

VERY HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

32 V

125 Cel

-55 Cel

R-PDSO-G2

1

38.5 pF

10 %

32 V

260

SILICON

13.5

IEC-60134

BB179,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

19.74 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

30 V

e3

SILICON

8.45

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.