DUAL Varactor Diodes 1,767

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Config Variable Capacitance Diode Classification Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Reverse Recovery Time Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features JEDEC-95 Code Diode Cap Tolerance Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

BB565H7908XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

R-PDSO-F2

20 pF

LOW INDUCTANCE

7.5 %

NOT SPECIFIED

NOT SPECIFIED

SILICON

6.3

BB814E6433

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

SMALL OUTLINE

Varactors

20 V

R-PDSO-G3

Not Qualified

44.75 pF

20 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

2.05

BB833

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

S BAND

1

SMALL OUTLINE

Varactors

30 V

150 Cel

-55 Cel

Tin (Sn)

R-PDSO-G2

1

Not Qualified

9.3 pF

8.11 %

30 V

e3

NOT SPECIFIED

NOT SPECIFIED

SILICON

11

BB857-H7902

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

1

SMALL OUTLINE

Varactors

35 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

6.6 pF

9.09 %

e3

260

SILICON

9.7

BB659

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

R-PDSO-F2

1

Not Qualified

38.3 pF

LOW INDUCTANCE

5.26 %

30 V

SILICON

9.8

BB640E6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

35 V

MATTE TIN

R-PDSO-G2

1

Not Qualified

69 pF

e3

260

SILICON

19.5

BB837-E7263

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

1

SMALL OUTLINE

Varactors

35 V

150 Cel

-55 Cel

R-PDSO-G2

6.6 pF

9.09 %

SILICON

9.7

BB512

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.00000002 uA

1

10 V

SMALL OUTLINE

Varactors

12 V

Tin/Lead (Sn/Pb)

R-PDSO-G2

Not Qualified

470 pF

12 V

e0

SILICON

15

BB565H7903XTMA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

R-PDSO-F2

20 pF

LOW INDUCTANCE

7.5 %

NOT SPECIFIED

NOT SPECIFIED

SILICON

6.3

BB804SF2-E6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

ABRUPT

2

SMALL OUTLINE

Varactors

18 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-G3

1

44.75 pF

6.15 %

18 V

e3

260

SILICON

1.65

BB439E6433

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

R-PDSO-G2

Not Qualified

43 pF

28 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

5

BB66402VE7902XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

R-PDSO-F2

41.8 pF

6.59 %

30 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

11

BB659C

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

R-PDSO-F2

1

Not Qualified

39 pF

7.01 %

35 V

SILICON

9.5

BB814E6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

SMALL OUTLINE

Varactors

20 V

R-PDSO-G3

Not Qualified

44.75 pF

20 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

2.05

BB689H7908XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

R-PDSO-F2

56.5 pF

CAPACITANCE MATCHED TO 2%

9.33 %

NOT SPECIFIED

NOT SPECIFIED

SILICON

14.5

BB804E6433

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

200

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

SMALL OUTLINE

Varactors

18 V

Matte Tin (Sn)

R-PDSO-G3

Not Qualified

6.15 %

18 V

e3

SILICON

1.65

BAW222E6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

.1 A

.715 V

.004 us

2

SMALL OUTLINE

Rectifier Diodes

85 V

150 Cel

MATTE TIN

R-PDSO-G3

Not Qualified

.25 W

1.5 pF

85 V

4.5 A

e3

SILICON

BB837

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

35 V

TIN

R-PDSO-G2

1

Not Qualified

6.6 pF

LOW INDUCTANCE

9.09 %

e3

SILICON

10.2

BB857E7902XT

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

35 V

R-PDSO-F2

Not Qualified

6.6 pF

9.09 %

NOT SPECIFIED

NOT SPECIFIED

SILICON

10.2

BB644E6433

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

R-PDSO-G2

Not Qualified

41.8 pF

6.59 %

30 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

11

BB644E7904HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

MATTE TIN

R-PDSO-G2

41.8 pF

6.59 %

30 V

e3

SILICON

11

BB68902VH7908XT

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

R-PDSO-F2

56.5 pF

CAPACITANCE MATCHED TO 2%

9.33 %

NOT SPECIFIED

NOT SPECIFIED

SILICON

14.5

BB644E6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

R-PDSO-G2

Not Qualified

41.8 pF

6.59 %

30 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

11

BB664H7902XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

R-PDSO-F2

41.8 pF

6.59 %

30 V

SILICON

11

BB545E6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

R-PDSO-G2

Not Qualified

20 pF

NOT SPECIFIED

NOT SPECIFIED

SILICON

9

BB535E6433

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

R-PDSO-G2

Not Qualified

18.7 pF

NOT SPECIFIED

NOT SPECIFIED

SILICON

8.2

BB669

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

R-PDSO-G2

1

Not Qualified

56.5 pF

CAPACITANCE MATCHED TO 2%

9.33 %

SILICON

14.5

BB664-02VE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

R-PDSO-F2

Not Qualified

41.8 pF

6.59 %

30 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

11

BB804-SF2

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

SMALL OUTLINE

Matte Tin (Sn)

R-PDSO-G3

1

Not Qualified

18 V

e3

SILICON

1.65

BB833E6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

S BAND

1

SMALL OUTLINE

Varactors

35 V

Matte Tin (Sn)

R-PDSO-G2

1

Not Qualified

9.3 pF

8.11 %

35 V

e3

40

260

SILICON

11

BB669E7904HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

R-PDSO-G2

56.5 pF

CAPACITANCE MATCHED TO 2%

9.33 %

SILICON

14.5

BBY55-02WE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Varactors

16 V

MATTE TIN

R-PDSO-F2

1

Not Qualified

18.6 pF

5.66 %

16 V

e3

260

SILICON

2

BBY51-02W

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Varactors

7 V

R-PDSO-F2

1

Not Qualified

5.4 pF

LOW INDUCTANCE

6.48 %

7 V

SILICON

1.55

BBY55-02WE6433

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Varactors

16 V

R-PDSO-F2

Not Qualified

18.6 pF

5.66 %

16 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

2

BBY51-02WE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Varactors

7 V

MATTE TIN

R-PDSO-F2

1

Not Qualified

5.4 pF

6.48 %

7 V

e3

260

SILICON

1.55

BBY57-02W

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Varactors

10 V

MATTE TIN

R-PDSO-F2

1

Not Qualified

17.5 pF

LOW INDUCTANCE

5.98 %

10 V

e3

SILICON

3

BBY5503WE6327HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

150 Cel

-55 Cel

TIN

R-PDSO-G2

1

18.6 pF

LOW INDUCTANCE

5.66 %

16 V

e3

SILICON

2

BBY6605WH6327XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

HYPERABRUPT

1

SMALL OUTLINE

150 Cel

-55 Cel

TIN

R-PDSO-G3

1

68.7 pF

HIGH Q

4 %

12 V

e3

SILICON

5

BBY51-02WE6433

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Varactors

7 V

R-PDSO-F2

Not Qualified

5.4 pF

6.48 %

7 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

1.55

BBY5103WE6327XT

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

R-PDSO-G2

5.4 pF

6.48 %

7 V

SILICON

1.55

BBY58-02V

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Varactors

10 V

TIN

R-PDSO-F2

1

Not Qualified

18.3 pF

4.89 %

10 V

e3

SILICON

1.15

BBY5502WH6327XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

150 Cel

-55 Cel

R-PDSO-F2

18.6 pF

LOW INDUCTANCE

5.66 %

16 V

SILICON

2

BBY59-02VE6433

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Varactors

15 V

MATTE TIN

R-PDSO-F2

Not Qualified

27.8 pF

4.32 %

15 V

e3

SILICON

3.4

BBY59-02VE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Varactors

15 V

MATTE TIN

R-PDSO-F2

1

Not Qualified

27.8 pF

4.32 %

15 V

e3

260

SILICON

3.4

BBY52-05W

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

HYPERABRUPT

2

SMALL OUTLINE

Varactors

7 V

R-PDSO-G3

1

Not Qualified

1.85 pF

HIGH Q

22.22 %

7 V

SILICON

1.1

BBY52E6433

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

HYPERABRUPT

2

SMALL OUTLINE

R-PDSO-G3

Not Qualified

1.85 pF

7 V

SILICON

1.1

BBY51-03WE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Varactors

7 V

MATTE TIN

R-PDSO-G2

1

Not Qualified

5.4 pF

6.48 %

7 V

e3

260

SILICON

1.55

BBY55-05W

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

HYPERABRUPT

2

SMALL OUTLINE

Varactors

16 V

R-PDSO-G3

1

Not Qualified

15 pF

HIGH Q, LOW INDUCTANCE

6.67 %

16 V

SILICON

2

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.