DUAL Varactor Diodes 1,767

Reset All

Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	No. of Elements	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
BBY53-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	6 V	125 Cel	-55 Cel	TIN	R-PDSO-F2	1	Not Qualified		5.3 pF		9.43 %	6 V	e3			SILICON	1.8
BBY53-05W-H6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT	ULTRA HIGH FREQUENCY	2	SMALL OUTLINE	Varactors	6 V	125 Cel	-55 Cel	MATTE TIN	R-PDSO-G3	1			5.3 pF		9.43 %	6 V	e3		260	SILICON	1.8
BBY5305WE6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT	ULTRA HIGH FREQUENCY	2	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G3				5.3 pF		9.43 %	6 V				SILICON	1.8
BBY56-03W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE			1	SMALL OUTLINE	Varactors	10 V				R-PDSO-G2	1	Not Qualified		40 pF	LOW INDUCTANCE	7.5 %					SILICON	2.15
BBY58-03W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	10 V				R-PDSO-G2	1	Not Qualified		18.3 pF	LOW INDUCTANCE	4.89 %	10 V				SILICON	1.15
BBY55-02VE6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	16 V				R-PDSO-F2		Not Qualified		18.6 pF		5.66 %	16 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	2
BB639E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	1	SMALL OUTLINE	Varactors	30 V			MATTE TIN	R-PDSO-G2		Not Qualified		38.3 pF				e3			SILICON	13.5
BBY5806WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON ANODE, 2 ELEMENTS	HYPERABRUPT		1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G3				18.3 pF	LOW INDUCTANCE	4.89 %	10 V				SILICON	1.15
BBY52-02W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	7 V				R-PDSO-F2	1	Not Qualified		1.85 pF	LOW INDUCTANCE	22.22 %	7 V				SILICON	1.1
BBY5302VH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY	1	SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-F2	1			5.3 pF		9.43 %	6 V	e3			SILICON	1.8
BB555	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY	1	SMALL OUTLINE	Varactors	30 V				R-PDSO-F2	1	Not Qualified		18.7 pF	LOW INDUCTANCE	6.67 %	30 V				SILICON	6
BBY5803WE6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G2				18.3 pF	LOW INDUCTANCE	4.89 %	10 V				SILICON	1.15
BBY56-02WE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE			1	SMALL OUTLINE	Varactors	10 V				R-PDSO-F2	1	Not Qualified		40 pF		7.5 %	10 V			260	SILICON	2.15
BBY51	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT		2	SMALL OUTLINE	Varactors	6 V				R-PDSO-G3	1	Not Qualified		5.4 pF		6.48 %	7 V				SILICON	1.55
BBY53	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT		2	SMALL OUTLINE	Varactors	6 V	125 Cel	-55 Cel		R-PDSO-G3	1	Not Qualified		5.3 pF		9.43 %	6 V				SILICON	1.8
BBY51-07E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	4	YES	RECTANGULAR		PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS	HYPERABRUPT		2	SMALL OUTLINE					MATTE TIN	R-PDSO-G4		Not Qualified		5.3 pF			7 V	e3			SILICON	1.55
BBY5502WE6327XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				18.6 pF	LOW INDUCTANCE	5.66 %	16 V				SILICON	2
BBY53-02V-H6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY	1	SMALL OUTLINE	Varactors	6 V	125 Cel	-55 Cel		R-PDSO-F2	1			5.3 pF		9.43 %	6 V			260	SILICON	1.8
BBY5202WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				1.85 pF	LOW INDUCTANCE	22.22 %	7 V				SILICON	1.1
BBY57-03W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	10 V				R-PDSO-G2	1	Not Qualified		17.5 pF	LOW INDUCTANCE		10 V				SILICON	3
BBY52E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT		2	SMALL OUTLINE						R-PDSO-G3		Not Qualified		1.85 pF			7 V				SILICON	1.1
BBY5702VE6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE						R-PDSO-F2				17.5 pF		5.98 %	10 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	3
BBY58-02W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	10 V				R-PDSO-F2	1	Not Qualified		18.3 pF	LOW INDUCTANCE	4.89 %	10 V				SILICON	1.15
BBY5503WE6327BTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G2				18.6 pF	LOW INDUCTANCE	5.66 %	16 V				SILICON	2
BBY51E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT		2	SMALL OUTLINE	Varactors	7 V			MATTE TIN	R-PDSO-G3	1	Not Qualified		5.4 pF		6.48 %	7 V	e3		260	SILICON	1.55
BBY57-02WE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	10 V				R-PDSO-F2	1	Not Qualified		17.5 pF		5.98 %	10 V			260	SILICON	3
BBY58-05W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT		2	SMALL OUTLINE	Varactors	10 V				R-PDSO-G3	1	Not Qualified		18.3 pF	LOW INDUCTANCE	4.89 %	10 V				SILICON	1.15
BBY51E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT		2	SMALL OUTLINE	Varactors	7 V			MATTE TIN	R-PDSO-G3	1	Not Qualified		5.4 pF		6.48 %	7 V	e3		260	SILICON	1.55
BBY5805WE6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT		1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G3				18.3 pF	LOW INDUCTANCE	4.89 %	10 V				SILICON	1.15
BBY51-03WE6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	7 V				R-PDSO-G2		Not Qualified		5.4 pF		6.48 %	7 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	1.55
BBY51-07E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	4	YES	RECTANGULAR		PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS	HYPERABRUPT		2	SMALL OUTLINE					MATTE TIN	R-PDSO-G4		Not Qualified		5.3 pF			7 V	e3			SILICON	1.55
BBY53-05W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT		2	SMALL OUTLINE	Varactors	6 V	125 Cel	-55 Cel		R-PDSO-G3	1	Not Qualified		5.3 pF		9.43 %	6 V				SILICON	1.8
BBY6605WE6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT		1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G3				68.7 pF	HIGH Q	4 %	12 V				SILICON	5
BBY5302WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY	1	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-F2				5.3 pF		9.43 %	6 V				SILICON	1.8
BBY52-03WE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE						R-PDSO-G2		Not Qualified		1.85 pF			7 V				SILICON	1.1
BB844	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		VERY HIGH FREQUENCY	2	SMALL OUTLINE	Varactors	20 V				R-PDSO-G3	1	Not Qualified		43.75 pF	CAPACITANCE MATCHED TO 1.5%	2.86 %	18 V				SILICON	3.2
BBY58-07F	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	4	YES	RECTANGULAR		PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS	HYPERABRUPT		2	SMALL OUTLINE						R-PDSO-F4		Not Qualified		18.3 pF	HIGH Q	4.89 %	10 V				SILICON	2.8
BBY5802VE6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				18.3 pF		4.89 %	10 V				SILICON	1.15
BBY52-03WE6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE						R-PDSO-G2		Not Qualified		1.85 pF			7 V				SILICON	1.1
BBY53-03WE6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	6 V			Matte Tin (Sn)	R-PDSO-G2		Not Qualified		5.3 pF			6 V	e3			SILICON	1.8
BBY5305WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT	ULTRA HIGH FREQUENCY	2	SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-G3	1			5.3 pF		9.43 %	6 V	e3			SILICON	1.8
ZMV830BTA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	25 V			MATTE TIN	R-PDSO-G2	1	Not Qualified	.33 W	10 pF	LOW NOISE	5 %	25 V	e3	30	260	SILICON	4.5
UZC834BTA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE					Matte Tin (Sn)	R-PDSO-G3	1	Not Qualified	.33 W	47 pF	LOW NOISE	5 %	25 V	e3	40	260	SILICON	5
ZMV834ATC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	25 V			MATTE TIN	R-PDSO-G2	1	Not Qualified	.33 W	47 pF	LOW NOISE	10 %	25 V	e3	30	260	SILICON	5
FMMV2103TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	400	PLASTIC/EPOXY	SINGLE	ABRUPT		1	SMALL OUTLINE						R-PDSO-G3		Not Qualified	.33 W	10 pF	LOW NOISE	10 %	30 V				SILICON	2.6
ZC830TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE						R-PDSO-G3		Not Qualified	.33 W	10 pF	LOW NOISE	20 %	25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	4.5
ZMV931	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY	1	SMALL OUTLINE	Varactors	12 V	125 Cel		MATTE TIN	R-PDSO-G2	1	Not Qualified	.33 W	14.5 pF	HIGH RELIABILITY, LOW LEAKAGE CURRENT		12 V	e3	30	260	SILICON
UZC836BTC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE					Matte Tin (Sn)	R-PDSO-G3	1	Not Qualified	.33 W	100 pF	LOW NOISE	5 %	25 V	e3	40	260	SILICON	5

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.