DUAL Varactor Diodes 1,767

Reset All

Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Output Current	Maximum Forward Voltage (VF)	Maximum Reverse Recovery Time	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Diode Cap Tolerance	Minimum Breakdown Voltage	Maximum Non Repetitive Peak Forward Current	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
BB857-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	ABRUPT					.2 uA	1	30 V	SMALL OUTLINE		35 V	150 Cel	-55 Cel		R-PDSO-F2				6.6 pF						NOT SPECIFIED	NOT SPECIFIED	SILICON	9.7
BB640	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE							1		SMALL OUTLINE	Varactors	30 V	150 Cel	-55 Cel	TIN	R-PDSO-G2	1	Not Qualified		69 pF		10.14 %			e3			SILICON	15
BB565H7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY					1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				20 pF	LOW INDUCTANCE	7.5 %						SILICON	6.3
BB664-02V-H7902	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	ABRUPT	VERY HIGH FREQUENCY					1		SMALL OUTLINE	Varactors	35 V	150 Cel	-55 Cel		R-PDSO-F2	1			41.8 pF		6.59 %	30 V				260	SILICON	11
BB664-02VE6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY					1		SMALL OUTLINE	Varactors	35 V				R-PDSO-F2		Not Qualified		41.8 pF		6.59 %	30 V			NOT SPECIFIED	NOT SPECIFIED	SILICON	11
BB914E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS							2		SMALL OUTLINE	Varactors	18 V				R-PDSO-G3		Not Qualified		43.75 pF	1.5% MATCHED SETS AVAILABLE	2.86 %	18 V			NOT SPECIFIED	NOT SPECIFIED	SILICON	2.28
BB857H7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	ABRUPT						1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				6.6 pF		9.09 %	30 V					SILICON	9.7
BB68902VE7908XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY					1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				56.5 pF	CAPACITANCE MATCHED TO 2%	9.33 %				NOT SPECIFIED	NOT SPECIFIED	SILICON	14.5
BB565H7912XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY					1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				20 pF	LOW INDUCTANCE	7.5 %				NOT SPECIFIED	NOT SPECIFIED	SILICON	6.3
BB689-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY					1		SMALL OUTLINE	Varactors	30 V				R-PDSO-F2	1	Not Qualified		56.5 pF	CAPACITANCE MATCHED TO 2%	9.33 %						SILICON	14.5
BB689H7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY					1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				56.5 pF	CAPACITANCE MATCHED TO 2%	9.33 %						SILICON	14.5
BB664-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY					1		SMALL OUTLINE	Varactors	35 V				R-PDSO-F2	1	Not Qualified		41.8 pF		6.59 %	30 V					SILICON	11
BB565-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY					1		SMALL OUTLINE	Varactors	30 V				R-PDSO-F2	1	Not Qualified		20 pF	LOW INDUCTANCE	7.5 %						SILICON	6.3
BB545E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY					1		SMALL OUTLINE	Varactors	35 V				R-PDSO-G2		Not Qualified		20 pF						NOT SPECIFIED	NOT SPECIFIED	SILICON	9
BB804E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS							2		SMALL OUTLINE	Varactors	18 V				R-PDSO-G3		Not Qualified				6.15 %	18 V			NOT SPECIFIED	NOT SPECIFIED	SILICON	1.65
BAW222	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON ANODE, 2 ELEMENTS			.1 A	.715 V	.004 us		2		SMALL OUTLINE	Rectifier Diodes	85 V	150 Cel		MATTE TIN	R-PDSO-G3		Not Qualified	.25 W	.5 pF			85 V	4.5 A	e3			SILICON
BB659C02VH7912XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY					1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				39 pF		7.01 %	35 V			NOT SPECIFIED	NOT SPECIFIED	SILICON	9.5
BB835	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		S BAND					1		SMALL OUTLINE	Varactors	30 V	150 Cel	-55 Cel	TIN LEAD	R-PDSO-G2		Not Qualified		9.1 pF		8.11 %			e0			SILICON	13.5
BB659C02VH7908XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY					1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				39 pF		7.01 %	35 V			NOT SPECIFIED	NOT SPECIFIED	SILICON	9.5
BB659CH7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY					1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				39 pF		7.01 %	35 V					SILICON	9.5
BB644	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY					1		SMALL OUTLINE	Varactors	30 V				R-PDSO-G2	1	Not Qualified		41.8 pF		6.59 %	30 V					SILICON	11
BB831	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		L BAND					1		SMALL OUTLINE	Varactors	30 V				R-PDSO-G2	1	Not Qualified		8.8 pF	CAPACITANCE MATCHED TO 3%	11.36 %						SILICON	7.8
BB535	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY					1		SMALL OUTLINE	Varactors	30 V	150 Cel	-55 Cel	TIN	R-PDSO-G2	1	Not Qualified		18.7 pF	LOW INDUCTANCE	6.67 %	30 V		e3			SILICON	6
BB545E7904XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY					1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G2				20 pF	LOW INDUCTANCE	7.5 %						SILICON	6.3
BAW222E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON ANODE, 2 ELEMENTS			.1 A	.715 V	.004 us		2		SMALL OUTLINE	Rectifier Diodes	85 V	150 Cel		MATTE TIN	R-PDSO-G3		Not Qualified	.25 W	1.5 pF			85 V	4.5 A	e3			SILICON
BB535E7904XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY					1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G2				18.7 pF	LOW INDUCTANCE	6.67 %	30 V					SILICON	6
Q62702-B663	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY					1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G2				5.3 pF		15.09 %	7 V					SILICON	1.55
BB837E6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		S BAND					1		SMALL OUTLINE					TIN	R-PDSO-G2	1	Not Qualified		6.6 pF					e3			SILICON	9.7
BB439E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY					1		SMALL OUTLINE	Varactors	30 V			MATTE TIN	R-PDSO-G2	1	Not Qualified		43 pF			28 V		e3	40	260	SILICON	5
BB867-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE							1		SMALL OUTLINE	Varactors	35 V			MATTE TIN	R-PDSO-F2	1	Not Qualified		8.7 pF	CAPACITANCE MATCHED TO 5 %, LOW INDUCTANCE	8.05 %			e3			SILICON	14
BAV222E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			.1 A	.715 V	.004 us		2		SMALL OUTLINE	Rectifier Diodes	85 V	150 Cel		MATTE TIN	R-PDSO-G3		Not Qualified	.25 W	1.5 pF			85 V	4.5 A	e3			SILICON
BB664E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY					1		SMALL OUTLINE	Varactors	35 V				R-PDSO-F2		Not Qualified		41.8 pF		6.59 %	30 V			NOT SPECIFIED	NOT SPECIFIED	SILICON	11
BB833E6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		S BAND					1		SMALL OUTLINE					TIN	R-PDSO-G2	1	Not Qualified		9.3 pF		8.11 %	35 V		e3			SILICON	11
BB659E6805	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY					1		SMALL OUTLINE	Varactors	30 V			MATTE TIN	R-PDSO-F2		Not Qualified		38.3 pF	LOW INDUCTANCE	2.872 %			e3			SILICON	9.8
BB66402VH7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY					1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				41.8 pF		6.59 %	30 V					SILICON	11
BB659H7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY					1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				38.3 pF	LOW INDUCTANCE	5.26 %	30 V					SILICON	9.8
BB833E6327XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	ABRUPT	S BAND					1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G2				9.3 pF		8.11 %	30 V					SILICON	11
BAV222	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			.1 A	.715 V	.004 us		2		SMALL OUTLINE	Rectifier Diodes	85 V	150 Cel		MATTE TIN	R-PDSO-G3		Not Qualified	.25 W	.5 pF			85 V	4.5 A	e3			SILICON
BB914	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS							2		SMALL OUTLINE	Varactors	20 V	125 Cel	-55 Cel	TIN	R-PDSO-G3	1	Not Qualified		43.75 pF	CAPACITANCE MATCHED TO 1.5%	2.86 %	18 V		e3			SILICON	2.28
BB56502VH7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY					1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				20 pF	LOW INDUCTANCE	7.5 %						SILICON	6.3
BB439E6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY					1		SMALL OUTLINE					TIN	R-PDSO-G2	1	Not Qualified		43 pF			28 V		e3			SILICON	5
BB679-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE							1		SMALL OUTLINE	Varactors	30 V				R-PDSO-F2	1	Not Qualified		47.5 pF		8.42 %						SILICON	12
BB659C-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY					1		SMALL OUTLINE	Varactors	35 V				R-PDSO-F2	1	Not Qualified		39 pF		7.01 %	35 V					SILICON	9.5
BB535E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY					1		SMALL OUTLINE	Varactors	35 V				R-PDSO-G2		Not Qualified		18.7 pF						NOT SPECIFIED	NOT SPECIFIED	SILICON	8.2
BB535E7904HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY					1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-G2	1			18.7 pF	LOW INDUCTANCE	6.67 %	30 V		e3			SILICON	6
BB857	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE							1		SMALL OUTLINE	Varactors	35 V				R-PDSO-F2	1	Not Qualified		6.6 pF		9.09 %						SILICON	10.2
BB68902VH7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY					1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				56.5 pF	CAPACITANCE MATCHED TO 2%	9.33 %						SILICON	14.5
BAV222E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			.1 A	.715 V	.004 us		2		SMALL OUTLINE	Rectifier Diodes	85 V	150 Cel		MATTE TIN	R-PDSO-G3		Not Qualified	.25 W	1.5 pF			85 V	4.5 A	e3			SILICON

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.