LPDDR4 DRAM DRAM 425

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Interleaved Burst Length	Length
MT53D512M32D2DS-053WT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	536870912 words	16,32	YES	COMMON	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	85 Cel		512MX32	512M		-25 Cel		BOTTOM	1		1.95 V	.8 mm	1869.1 MHz	10 mm	17179869184 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY, TERM PITCH-MAX				16,32	14.5 mm
MT53E512M32D1ZW-046WT:B	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	536870912 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	85 Cel		512MX32	512M		-25 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.05 mm	2136.7 MHz	10 mm	17179869184 bit	1.06 V	TERMINAL_PITCH_MAX; SELF REFRESH; ALSO OPERATES WITH 1.8V NOMINAL SUPPLY				16,32	14.5 mm
MT53E128M32D2DS-053AUT:A	Micron Technology	LPDDR4 DRAM	AUTOMOTIVE	200	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	134217728 words		YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.65 mm	125 Cel		128MX32	128M	1.06 V	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	1866 MHz	10 mm	4294967296 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED		14.5 mm
MT53E512M32D1ZW-046AIT:B	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	536870912 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	95 Cel		512MX32	512M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.05 mm	2133 MHz	10 mm	17179869184 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX				16,32	14.5 mm
MT53D512M32D2DS-053AIT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	536870912 words	16,32	YES	COMMON	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	95 Cel		512MX32	512M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.95 V	.8 mm	1869.1 MHz	10 mm	17179869184 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY, TERM PITCH-MAX				16,32	14.5 mm
MT53E1G32D2FW-046AIT:B	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	1073741824 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	95 Cel		1GX32	1G		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.1 mm	2133 MHz	10 mm	34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX				16,32	14.5 mm
MT53E512M32D1ZW-046IT:B	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	536870912 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	95 Cel		512MX32	512M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.05 mm	2136.7 MHz	10 mm	17179869184 bit	1.06 V	TERMINAL_PITCH_MAX; SELF REFRESH; ALSO OPERATES WITH 1.8V NOMINAL SUPPLY				16,32	14.5 mm
MT53E512M32D1ZW-046AAT:B	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	536870912 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	105 Cel		512MX32	512M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.05 mm	2133 MHz	10 mm	17179869184 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX				16,32	14.5 mm
MT53D1024M32D4DT-046WT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	1073741824 words	16,32	YES	COMMON	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	85 Cel		1GX32	1G		-25 Cel		BOTTOM	1		1.95 V	.95 mm	2136.7 MHz	10 mm	34359738368 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY, TERM PITCH-MAX				16,32	14.5 mm
MT53D512M32D2DS-046AIT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	536870912 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	95 Cel		512MX32	512M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2136.7 MHz	10 mm	17179869184 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX				16,32	14.5 mm
MT53E1G32D2FW-046IT:B	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	1073741824 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	95 Cel		1GX32	1G		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B200	1.17 V	1.1 mm	2136.7 MHz	10 mm	34359738368 bit	1.06 V	TERMINAL_PITCH_MAX; SELF REFRESH; ALSO OPERATES WITH 1.8V NOMINAL SUPPLY	e1	30	260	16,32	14.5 mm
MT53E256M32D2DS-053WT:B	Micron Technology	LPDDR4 DRAM
MT53E1536M32D4DT-046WT:A	Micron Technology	LPDDR4 DRAM
MT53E256M32D2DS-046AIT:B	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	268435456 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	95 Cel	3-STATE	256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2133 MHz	10 mm	8589934592 bit	1.06 V					16,32	14.5 mm
MT53D1024M32D4DT-046AAT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	1073741824 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	105 Cel		1GX32	1G		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.95 mm	2136.7 MHz	10 mm	34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX		NOT SPECIFIED	NOT SPECIFIED	16,32	14.5 mm
MT53D512M32D2DS-046AAT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	536870912 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	105 Cel		512MX32	512M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2136.7 MHz	10 mm	17179869184 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX				16,32	14.5 mm
K4F6E3S4HM-MGCJ	Samsung Electro-mechanics	LPDDR4 DRAM	OTHER	200	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	ASYNCHRONOUS	536870912 words				1.1	32	GRID ARRAY			85 Cel		512MX32	512M		-25 Cel		BOTTOM		R-PBGA-B200					17179869184 bit
MT53E512M32D1ZW-046AUT:B	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	536870912 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	125 Cel		512MX32	512M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.05 mm	2133 MHz	10 mm	17179869184 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX				16,32	14.5 mm
MT53D1024M32D4DT-046AIT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	1073741824 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	95 Cel		1GX32	1G		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.95 mm	2136.7 MHz	10 mm	34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX				16,32	14.5 mm
NT6AN512T32AV-J2	Nanya Technology	LPDDR4 DRAM	OTHER	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	536870912 words				1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.8 mm	105 Cel		512MX32	512M		-30 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1 mm		10 mm	17179869184 bit	1.06 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					15 mm
MT53D1024M32D4DT-053AIT:D	Micron Technology	LPDDR4 DRAM
MT53E256M32D2DS-046IT:B	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	268435456 words		YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	85 Cel		256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.032 mm	2133 MHz	10 mm	8589934592 bit	1.06 V						14.5 mm
MT53E256M32D2DS-053AUT:B	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	268435456 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	125 Cel	3-STATE	256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	1866 MHz	10 mm	8589934592 bit	1.06 V					16,32	14.5 mm
MT53E256M32D2DS-053AAT:B	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	268435456 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	105 Cel	3-STATE	256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	1866 MHz	10 mm	8589934592 bit	1.06 V			NOT SPECIFIED	NOT SPECIFIED	16,32	14.5 mm
MT53E256M32D2DS-046AUT:B	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	268435456 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	125 Cel	3-STATE	256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2133 MHz	10 mm	8589934592 bit	1.06 V					16,32	14.5 mm
MT53D512M32D2DS-053AUT:D	Micron Technology	LPDDR4 DRAM	AUTOMOTIVE								1	CMOS				536870912 words				1.1	32				125 Cel		512MX32	512M		-40 Cel			1				1866 MHz		17179869184 bit
MT53D512M32D2DS-046AUT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	536870912 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	125 Cel		512MX32	512M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2136.7 MHz	10 mm	17179869184 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX				16,32	14.5 mm
MT53E1G32D2FW-046WT:B	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	1073741824 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	85 Cel		1GX32	1G		-25 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.1 mm	2136.7 MHz	10 mm	34359738368 bit	1.06 V	TERMINAL_PITCH_MAX; SELF REFRESH; ALSO OPERATES WITH 1.8V NOMINAL SUPPLY				16,32	14.5 mm
MT53E1G32D2FW-046AUT:B	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	1073741824 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	125 Cel		1GX32	1G		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.1 mm	2133 MHz	10 mm	34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX				16,32	14.5 mm
MT53D512M32D2DS-046WT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	536870912 words	16,32	YES	COMMON	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	85 Cel		512MX32	512M		-25 Cel		BOTTOM	1		1.95 V	.8 mm	2136.7 MHz	10 mm	17179869184 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY, TERM PITCH-MAX				16,32	14.5 mm
MT53E1G32D2FW-046AAT:B	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	1073741824 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	105 Cel		1GX32	1G		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.1 mm	2133 MHz	10 mm	34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX				16,32	14.5 mm
MT53E256M32D2DS-053AIT:B	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	268435456 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	95 Cel	3-STATE	256MX32	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	1866 MHz	10 mm	8589934592 bit	1.06 V		e1	30	260	16,32	14.5 mm
MT53D512M16D1DS-046AIT:D	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	536870912 words	16,32	YES	COMMON	1.1	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	95 Cel		512MX16	512M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2136.7 MHz	10 mm	8589934592 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX				16,32	14.5 mm
MT53E2G32D4DE-046WT:C	Micron Technology	LPDDR4 DRAM
MT53E1G16D1FW-046AAT:A	Micron Technology	LPDDR4 DRAM
MT53E512M32D2FW-046AAT:D	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	536870912 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	105 Cel		512MX32	512M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.1 mm	2136.7 MHz	10 mm	17179869184 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX				16,32	14.5 mm
MT53D1024M32D4DT-053WT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	1073741824 words	16,32	YES	COMMON	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	85 Cel		1GX32	1G		-25 Cel		BOTTOM	1		1.95 V	.95 mm	1869.1 MHz	10 mm	34359738368 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY, TERM PITCH-MAX				16,32	14.5 mm
AS4C256M32MD4-062BAN	Alliance Memory	LPDDR4 DRAM		200			RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL		268435456 words					32				105 Cel		256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200					8589934592 bit
MT53E256M32D2DS-046WT:B	Micron Technology	LPDDR4 DRAM
MT53E1G16D1FW-046AIT:A	Micron Technology	LPDDR4 DRAM
MT53E1G32D2FW-046AUT:A	Micron Technology	LPDDR4 DRAM
MT53E128M32D2DS-046AAT:A	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	134217728 words		YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.65 mm	105 Cel		128MX32	128M	1.06 V	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2133 MHz	10 mm	4294967296 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED		14.5 mm
MT53E128M32D2DS-046WT:A	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	134217728 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	85 Cel		128MX32	128M		-25 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2133 MHz	10 mm	4294967296 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX				16,32	14.5 mm
MT53E2G32D4NQ-046WT:A	Micron Technology	LPDDR4 DRAM					RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	2147483648 words		NO			32				85 Cel		2GX32	2G		-25 Cel		BOTTOM	1	R-PBGA-B					68719476736 bit
W66CP2NQUAFJ	Winbond Electronics	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	134217728 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	105 Cel		128MX32	128M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	1600 MHz	10 mm	4294967296 bit	1.06 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; TERM PITCH-MAX				16,32	14.5 mm
W66CP2NQUAGJ	Winbond Electronics	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	134217728 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	105 Cel		128MX32	128M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	1869.1 MHz	10 mm	4294967296 bit	1.06 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; TERM PITCH-MAX				16,32	14.5 mm
W66CP2NQUAHJ	Winbond Electronics	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	134217728 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	105 Cel		128MX32	128M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2136.7 MHz	10 mm	4294967296 bit	1.06 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; TERM PITCH-MAX				16,32	14.5 mm
AS4C128M16MD4-062BAN	Alliance Memory	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	134217728 words	16,32	YES	COMMON	1.1	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	105 Cel	3-STATE	128MX16	128M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	1600 MHz	10 mm	2147483648 bit	1.06 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; TERM PITCH-MAX				16,32	14.5 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.