LPDDR4 DRAM DRAM 425

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT53E256M32D2DS-046AAT:B	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	105 Cel	3-STATE	256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2133 MHz	10 mm	8589934592 bit	1.06 V			NOT SPECIFIED	NOT SPECIFIED		16,32	14.5 mm
MT53E128M32D2DS-046AIT:A	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.65 mm	85 Cel		128MX32	128M	1.06 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2133 MHz	10 mm	4294967296 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	e1	30	260			14.5 mm
MT53D512M16D1DS-046AAT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	105 Cel		512MX16	512M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2136.7 MHz	10 mm	8589934592 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53E128M32D2DS-046AUT:A	Micron Technology	LPDDR4 DRAM	AUTOMOTIVE	200	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.65 mm	125 Cel		128MX32	128M	1.06 V	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2133 MHz	10 mm	4294967296 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			14.5 mm
MT53E512M32D2FW-046WT:D	Micron Technology	LPDDR4 DRAM
IS43LQ16128A-062BLI	Integrated Silicon Solution	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	16,32	NO	COMMON		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	95 Cel		128MX16	128M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.95 V	.85 mm	1600 MHz	10 mm	2147483648 bit	1.7 V	terminal pitch-max					16,32	14.5 mm
MT53B256M32D1DS-062AAT:C	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	410 mA	268435456 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	105 Cel		256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	1600 MHz	10 mm	8589934592 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX				.0033 Amp	16,32	14.5 mm
MT53D512M16D1DS-046WT:D	Micron Technology	LPDDR4 DRAM
MT53E256M32D1KS-046AAT:L	Micron Technology	LPDDR4 DRAM		200	VFBGA	32768	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100, ISO 26262	BALL	SYNCHRONOUS	42.3 mA	268435456 words	16,32	YES	COMMON	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	105 Cel		256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.95 V	.95 mm	2133 MHz	10 mm	8589934592 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY				.0009 Amp	16,32	14.5 mm
MT53D1024M32D4DT-046AUT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	125 Cel		1GX32	1G		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.95 mm	2136.7 MHz	10 mm	34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53E1536M32D4DT-046AIT:A	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		1610612736 words	16,32	YES	COMMON	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	95 Cel		1536MX32	1536M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.95 V	.95 mm	2136.7 MHz	10 mm	51539607552 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM					16,32	14.5 mm
IS43LQ32256A-062BLI	Integrated Silicon Solution	LPDDR4 DRAM		200	TFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words	16,32	NO	COMMON		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.65 mm	85 Cel		256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.95 V	1.1 mm	1600 MHz	10 mm	8589934592 bit	1.7 V	TERM PITCH-MAX; ALSO REQUIRE SUPPLY VOLTAGE 1.06V TO 1.17V					16,32	14.5 mm
MT53E1G32D2FW-046AIT:A	Micron Technology	LPDDR4 DRAM
MT53E256M32D1KS-046AIT:L	Micron Technology	LPDDR4 DRAM		200	VFBGA	32768	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100, ISO 26262	BALL	SYNCHRONOUS	39.1 mA	268435456 words	16,32	YES	COMMON	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	95 Cel		256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.95 V	.95 mm	2133 MHz	10 mm	8589934592 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY				.0008 Amp	16,32	14.5 mm
MT53E768M32D4DT-053AIT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	95 Cel	3-STATE	768MX32	768M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.95 mm	1866 MHz	10 mm	25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX		NOT SPECIFIED	NOT SPECIFIED		16,32	14.5 mm
NT6AN256T32AV-J2	Nanya Technology	LPDDR4 DRAM	OTHER	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	105 Cel	3-STATE	256MX32	256M		-30 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.83 mm	1866 MHz	10 mm	8589934592 bit	1.06 V	AUTO/SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY VOLTAGE					16,32	15 mm
MT53E768M32D4DT-053WT:E	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	85 Cel	3-STATE	768MX32	768M		-25 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.95 mm	1866 MHz	10 mm	25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E256M32D2FW-046AAT:B	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	105 Cel	3-STATE	256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.1 mm	2133 MHz	10 mm	8589934592 bit	1.06 V						16,32	14.5 mm
MT53E256M32D2FW-046WT:B	Micron Technology	LPDDR4 DRAM
MT53E128M32D2DS-053AIT:A	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.65 mm	85 Cel		128MX32	128M	1.06 V	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	1866 MHz	10 mm	4294967296 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			14.5 mm
MT53E1536M32D4DE-046AIT:C	Micron Technology	LPDDR4 DRAM
MT53E256M16D1DS-046AAT:B	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	105 Cel	3-STATE	256MX16	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2133 MHz	10 mm	4294967296 bit	1.06 V		e1	30	260		16,32	14.5 mm
MT53E256M16D1FW-046WT:B	Micron Technology	LPDDR4 DRAM
MT53E2G32D4DT-046AAT:A	Micron Technology	LPDDR4 DRAM
MT53E256M32D2FW-046AUT:B	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	125 Cel	3-STATE	256MX32	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B200	1.17 V	1.1 mm	2133 MHz	10 mm	8589934592 bit	1.06 V		e1	30	260		16,32	14.5 mm
MT53E2G32D4DE-046AIT:A	Micron Technology	LPDDR4 DRAM
MT53E512M16D1FW-046AIT:D	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	95 Cel		512MX16	512M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.1 mm	2136.7 MHz	10 mm	8589934592 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53E384M32D2DS-053AIT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		402653184 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	95 Cel	3-STATE	384MX32	384M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	1866 MHz	10 mm	12884901888 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E768M32D4DE-046AAT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	105 Cel	3-STATE	768MX32	768M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.14 mm	2133 MHz	10 mm	25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E128M32D2DS-053WT:A	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	85 Cel		128MX32	128M		-25 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	1866 MHz	10 mm	4294967296 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E128M32D2FW-046AAT:A	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.65 mm	105 Cel		128MX32	128M	1.06 V	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.1 mm	2133 MHz	10 mm	4294967296 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			14.5 mm
MT53E1536M32D4DE-046AAT:C	Micron Technology	LPDDR4 DRAM
MT53E256M16D1FW-046AIT:B	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	95 Cel	3-STATE	256MX16	256M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.1 mm	2133 MHz	10 mm	4294967296 bit	1.06 V						16,32	14.5 mm
MT53E256M32D2FW-046IT:B	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	95 Cel	3-STATE	256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.1 mm	2133 MHz	10 mm	8589934592 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53E4G32D8CY-046WT:C	Micron Technology	LPDDR4 DRAM
MT53E4G32D8GS-046WT:C	Micron Technology	LPDDR4 DRAM
MT53E512M16D1FW-046AAT:D	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	105 Cel		512MX16	512M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.1 mm	2136.7 MHz	10 mm	8589934592 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53E512M64D4NK-053WT:D	Micron Technology	LPDDR4 DRAM		366	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	300 mA	536870912 words	16,32	YES	COMMON	1.1	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA366,29X29,20	.5 mm	85 Cel	3-STATE	512MX64	512M		-25 Cel		BOTTOM	1	S-PBGA-B366	1.17 V	.7 mm	1866 MHz	15 mm	34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM					16,32	15 mm	3.5 ns
MT53E768M32D2ZW-046AAT:C	Micron Technology	LPDDR4 DRAM
MT53E768M32D2ZW-046AIT:C	Micron Technology	LPDDR4 DRAM
MT53E768M32D4DE-046AIT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	95 Cel	3-STATE	768MX32	768M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.14 mm	2133 MHz	10 mm	25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E768M32D4DT-046AAT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	105 Cel	3-STATE	768MX32	768M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.95 mm	2133 MHz	10 mm	25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX		NOT SPECIFIED	NOT SPECIFIED		16,32	14.5 mm
MT53E768M32D4DT-046AIT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	95 Cel	3-STATE	768MX32	768M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.95 mm	2133 MHz	10 mm	25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E768M64D4HJ-046AIT:B	Micron Technology	LPDDR4 DRAM
K4F4E3S4HF-GFCJ0	Samsung	LPDDR4 DRAM		200	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	ASYNCHRONOUS		134217728 words					32	GRID ARRAY					128MX32	128M				BOTTOM	1	R-PBGA-B200					4294967296 bit
K4F4E3S4HF-GHCJ0	Samsung	LPDDR4 DRAM		200	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	ASYNCHRONOUS		134217728 words					32	GRID ARRAY					128MX32	128M				BOTTOM	1	R-PBGA-B200					4294967296 bit
K4F6E3S4HM-GHCL0	Samsung	LPDDR4 DRAM		200	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	ASYNCHRONOUS		536870912 words					32	GRID ARRAY					512MX32	512M				BOTTOM	1	R-PBGA-B200					17179869184 bit
K4F6E3D4HB-MFCJ0	Samsung	LPDDR4 DRAM		200	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	ASYNCHRONOUS		536870912 words					32	GRID ARRAY					512MX32	512M				BOTTOM	1	R-PBGA-B200					17179869184 bit

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.