RAMBUS DRAM DRAM 438

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
TC59R1809HK	Toshiba	RAMBUS DRAM	COMMERCIAL	36	LSSOP		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words	YES		3.3		9	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH			.65 mm	70 Cel		3-STATE	2MX9	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G36	3.6 V	1.7 mm		11 mm	Not Qualified	18874368 bit	3 V	SELF REFRESH	e0		25 mm
TC59YM816BKG32C	Toshiba	RAMBUS DRAM		107	TFBGA	16384	SQUARE	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES	COMMON	1.8	1.8	16	MICROELECTRONIC ASSEMBLY	BGA104,11X16,50/32	DRAMs	.8 mm			3-STATE	16MX16	16M			DUAL	1	R-XDMA-N240	1.86 V	1.2 mm			Not Qualified	268435456 bit	1.74 V	AUTO/SELF REFRESH
TC59RM818MB-7	Toshiba	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm			3-STATE	16MX18	16M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B92	2.63 V	1.2 mm	711 MHz	9.057 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH	e0		17.349 mm	50 ns
TC59RM716MB-6	Toshiba	RAMBUS DRAM		62	TFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1.2 mm	600 MHz	11.66 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0		12.92 mm
TC59YM916BKG32A	Toshiba	RAMBUS DRAM		100	TFBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	1450 mA	33554432 words	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA100,11X16,50/32	DRAMs	.8 mm			3-STATE	32MX16	32M			BOTTOM	1	R-PBGA-B100	1.86 V	1.2 mm		14.56 mm	Not Qualified	536870912 bit	1.74 V	SELF CONTAINED REFRESH		.00005 Amp	15.18 mm
TC59RM818MB-6	Toshiba	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm			3-STATE	16MX18	16M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B92	2.63 V	1.2 mm	600 MHz	9.057 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH	e0		17.349 mm	53 ns
TC59R0808HK	Toshiba	RAMBUS DRAM	COMMERCIAL	36	LSSOP		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	GULL WING	SYNCHRONOUS		1048576 words	YES		3.3		8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH			.65 mm	70 Cel		3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G36	3.6 V	1.7 mm		11 mm	Not Qualified	8388608 bit	3 V	SELF REFRESH	e0		25 mm
TC59RM718RB-7	Toshiba	RAMBUS DRAM		62	TFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX18	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1.2 mm	711 MHz	11.66 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0		12.92 mm
TC59RM718MB-6	Toshiba	RAMBUS DRAM		62	TFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX18	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1.2 mm	600 MHz	11.66 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0		12.92 mm
TC59RM718GB-8	Toshiba	RAMBUS DRAM		54	LBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	MOS	BALL	SYNCHRONOUS		8388608 words	YES		2.5		18	GRID ARRAY, LOW PROFILE			1.27 mm				8MX18	8M			BOTTOM	1	R-PBGA-B54	2.63 V	1.3 mm		11.66 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH			12.92 mm
TC59RM716RB-7	Toshiba	RAMBUS DRAM		62	TFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1.2 mm	711 MHz	11.66 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0		12.92 mm
TC59RM816MB-8	Toshiba	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm			3-STATE	16MX16	16M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B92	2.63 V	1.2 mm	800 MHz	9.057 mm	Not Qualified	268435456 bit	2.37 V	SELF CONTAINED REFRESH	e0		17.349 mm	45 ns
TC59YM916BKG24A	Toshiba	RAMBUS DRAM		100	TFBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA100,11X16,50/32	DRAMs	.8 mm			3-STATE	32MX16	32M			BOTTOM	1	R-PBGA-B100	1.86 V	1.2 mm		14.56 mm	Not Qualified	536870912 bit	1.74 V	SELF CONTAINED REFRESH			15.18 mm
TC59YM916BKG32B	Toshiba	RAMBUS DRAM		100	TFBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	1450 mA	33554432 words	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA100,11X16,50/32	DRAMs	.8 mm			3-STATE	32MX16	32M			BOTTOM	1	R-PBGA-B100	1.86 V	1.2 mm		14.56 mm	Not Qualified	536870912 bit	1.74 V	SELF CONTAINED REFRESH		.00005 Amp	15.18 mm
TC59RM716GB-8	Toshiba	RAMBUS DRAM		54	LBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, LOW PROFILE	BGA54,7X9,50	DRAMs	1.27 mm			3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B54	2.63 V	1.3 mm	800 MHz	11.66 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0		12.92 mm
TC59RM716RB-6	Toshiba	RAMBUS DRAM		62	TFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1.2 mm	600 MHz	11.66 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0		12.92 mm
TC59RM718MB-7	Toshiba	RAMBUS DRAM		62	TFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX18	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1.2 mm	711 MHz	11.66 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0		12.92 mm
TC59RM716RB-8	Toshiba	RAMBUS DRAM		62	TFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1.2 mm	800 MHz	11.66 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0		12.92 mm
TC59R0409VK	Toshiba	RAMBUS DRAM									1	CMOS				524288 words			5		9								512KX9	512K				1		5.5 V				Not Qualified	4718592 bit	4.5 V
TC59RM718RB-6	Toshiba	RAMBUS DRAM		62	TFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX18	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1.2 mm	600 MHz	11.66 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0		12.92 mm
TC59YM916BKG40C	Toshiba	RAMBUS DRAM		100	TFBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA100,11X16,50/32	DRAMs	.8 mm			3-STATE	32MX16	32M			BOTTOM	1	R-PBGA-B100	1.86 V	1.2 mm		14.56 mm	Not Qualified	536870912 bit	1.74 V	SELF CONTAINED REFRESH			15.18 mm
TC59YM816BKG24A	Toshiba	RAMBUS DRAM		107	TFBGA	16384	SQUARE	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES	COMMON	1.8	1.8	16	MICROELECTRONIC ASSEMBLY	BGA104,11X16,50/32	DRAMs	.8 mm			3-STATE	16MX16	16M			DUAL	1	R-XDMA-N240	1.86 V	1.2 mm			Not Qualified	268435456 bit	1.74 V	AUTO/SELF REFRESH
TC59YM816BKG40C	Toshiba	RAMBUS DRAM		107	TFBGA	16384	SQUARE	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES	COMMON	1.8	1.8	16	MICROELECTRONIC ASSEMBLY	BGA104,11X16,50/32	DRAMs	.8 mm			3-STATE	16MX16	16M			DUAL	1	R-XDMA-N240	1.86 V	1.2 mm			Not Qualified	268435456 bit	1.74 V	AUTO/SELF REFRESH
TC59RM718GB-6	Toshiba	RAMBUS DRAM		54	LBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	MOS	BALL	SYNCHRONOUS		8388608 words	YES		2.5		18	GRID ARRAY, LOW PROFILE			1.27 mm				8MX18	8M			BOTTOM	1	R-PBGA-B54	2.63 V	1.3 mm		11.66 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH			12.92 mm
TC59RM816MB-6	Toshiba	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm			3-STATE	16MX16	16M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B92	2.63 V	1.2 mm	600 MHz	9.057 mm	Not Qualified	268435456 bit	2.37 V	SELF CONTAINED REFRESH	e0		17.349 mm	53 ns
TC59R0409SVP	Toshiba	RAMBUS DRAM	OTHER	32	SIP		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS		524288 words	YES		5		9	IN-LINE			.65 mm	100 Cel		3-STATE	512KX9	512K	0 Cel		SINGLE	1	R-PSIP-T32	5.5 V	11.5 mm		1.2 mm	Not Qualified	4718592 bit	4.5 V	SELF CONTAINED REFRESH; RAMBUS SIGNALING LOGIC INTERFACE; OPTEMP SPECIFIED AS TJ			25 mm
TC59RM816MB-7	Toshiba	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm			3-STATE	16MX16	16M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B92	2.63 V	1.2 mm	711 MHz	9.057 mm	Not Qualified	268435456 bit	2.37 V	SELF CONTAINED REFRESH	e0		17.349 mm	50 ns
TC59YM816BKG32B	Toshiba	RAMBUS DRAM		107	TFBGA	16384	SQUARE	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES	COMMON	1.8	1.8	16	MICROELECTRONIC ASSEMBLY	BGA104,11X16,50/32	DRAMs	.8 mm			3-STATE	16MX16	16M			DUAL	1	R-XDMA-N240	1.86 V	1.2 mm			Not Qualified	268435456 bit	1.74 V	AUTO/SELF REFRESH
TC59YM916AMG24A	Toshiba	RAMBUS DRAM		108	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	YES		1.8		16	GRID ARRAY, THIN PROFILE			1.27 mm				32MX16	32M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B108	1.86 V	1.2 mm			Not Qualified	536870912 bit	1.74 V	SELF CONTAINED REFRESH	e1
UPD48830LG6-A50	Renesas Electronics	RAMBUS DRAM	COMMERCIAL	72	SSOP		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		480 mA	1048576 words		COMMON	3.3	3.3	8	SMALL OUTLINE, SHRINK PITCH	SSOP72,.5	DRAMs	.635 mm	70 Cel		3-STATE	1MX8	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G72			250 MHz		Not Qualified	8388608 bit			e0	.0002 Amp
UPD488448FB-C60-53-DQ2	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words		COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62			600 MHz		Not Qualified	134217728 bit			e0
UPD488488FB-C71-45-DP1	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX18	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62			711 MHz		Not Qualified	150994944 bit			e0
UPD48830LG6-A45	Renesas Electronics	RAMBUS DRAM	COMMERCIAL	72	SSOP		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		440 mA	1048576 words		COMMON	3.3	3.3	8	SMALL OUTLINE, SHRINK PITCH	SSOP72,.5	DRAMs	.635 mm	70 Cel		3-STATE	1MX8	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G72			225 MHz		Not Qualified	8388608 bit			e0	.0002 Amp
UPD488448FF-C60-53-DQ2	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words		COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62			600 MHz		Not Qualified	134217728 bit			e0
UPD488488FB-C80-45-DP2	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX18	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62			800 MHz		Not Qualified	150994944 bit			e0
UPD488170LVN-A50	Renesas Electronics	RAMBUS DRAM	COMMERCIAL	32		1024		PLASTIC/EPOXY		YES		CMOS			480 mA	2097152 words		COMMON	3.3	3.3	9		SMSIP32,25	DRAMs	2.54 mm	70 Cel		3-STATE	2MX9	2M	0 Cel	Tin/Lead (Sn/Pb)	SINGLE					250 MHz		Not Qualified	18874368 bit			e0	.35 Amp
UPD488170LVN-A45-9	Renesas Electronics	RAMBUS DRAM	COMMERCIAL	32		1024		PLASTIC/EPOXY		YES		CMOS			440 mA	2097152 words		COMMON	3.3	3.3	9		SMSIP32,25	DRAMs	2.54 mm	70 Cel		3-STATE	2MX9	2M	0 Cel	Tin/Lead (Sn/Pb)	SINGLE					225 MHz		Not Qualified	18874368 bit			e0	.125 Amp
UPD488488FB-C60-53-DP2	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX18	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62			600 MHz		Not Qualified	150994944 bit			e0
UPD488385FB-C60-53BF1	Renesas Electronics	RAMBUS DRAM		74	FBGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		570 mA	4194304 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY, FINE PITCH	BGA74,7X16,30	DRAMs	.75 mm			3-STATE	4MX18	4M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B74			600 MHz		Not Qualified	75497472 bit			e0	.006 Amp
UPD488385-C80-45BF1	Renesas Electronics	RAMBUS DRAM		74	BGA			PLASTIC/EPOXY		YES		CMOS	BALL			4194304 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA74(UNSPEC)	DRAMs				3-STATE	4MX18	4M		Tin/Lead (Sn/Pb)	BOTTOM					800 MHz		Not Qualified	75497472 bit			e0
UPD488448FF-C80-45-DQ2	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words		COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62			800 MHz		Not Qualified	134217728 bit			e0
UPD488448FF-C71-45-DQ2	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words		COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62			711 MHz		Not Qualified	134217728 bit			e0
UPD488130LG6-A45	Renesas Electronics	RAMBUS DRAM		72	SSOP		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		440 mA	2097152 words		COMMON	3.3	3.3	8	SMALL OUTLINE, SHRINK PITCH	SSOP72,.5	DRAMs	.635 mm			3-STATE	2MX8	2M		Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G72			225 MHz		Not Qualified	16777216 bit			e0
UPD488130LVN-A45-9	Renesas Electronics	RAMBUS DRAM		32				PLASTIC/EPOXY		YES		CMOS			440 mA	2097152 words		COMMON	3.3	3.3	8		SMSIP32,25	DRAMs	2.54 mm			3-STATE	2MX8	2M		Tin/Lead (Sn/Pb)	SINGLE					225 MHz		Not Qualified	16777216 bit			e0	.125 Amp
UPD488170VN-A50-9	Renesas Electronics	RAMBUS DRAM	OTHER	32		1024		PLASTIC/EPOXY		YES		CMOS				2097152 words		COMMON	3.3	3.3	9		SMSIP32,25	DRAMs	2.54 mm	100 Cel		3-STATE	2MX9	2M	0 Cel	Tin/Lead (Sn/Pb)	SINGLE					250 MHz		Not Qualified	18874368 bit			e0
UPD488130	Renesas Electronics	RAMBUS DRAM		32				PLASTIC/EPOXY		YES		CMOS				2097152 words		COMMON	5	5	8		SMSIP32,25	DRAMs	2.54 mm			3-STATE	2MX8	2M		Tin/Lead (Sn/Pb)	SINGLE							Not Qualified	16777216 bit			e0
UPD488170LG6-A45	Renesas Electronics	RAMBUS DRAM	COMMERCIAL	72	SSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		440 mA	2097152 words		COMMON	3.3	3.3	9	SMALL OUTLINE, SHRINK PITCH	SSOP72,.5	DRAMs	.635 mm	70 Cel		3-STATE	2MX9	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G72			225 MHz		Not Qualified	18874368 bit			e0	.33 Amp
UPD488385-C80-50BF1	Renesas Electronics	RAMBUS DRAM		74	BGA			PLASTIC/EPOXY		YES		CMOS	BALL			4194304 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA74(UNSPEC)	DRAMs				3-STATE	4MX18	4M		Tin/Lead (Sn/Pb)	BOTTOM					800 MHz		Not Qualified	75497472 bit			e0

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.