RAMBUS DRAM DRAM 438

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
K4Y54164UF-JCC4	Samsung	RAMBUS DRAM		104	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	16777216 words		COMMON	1.8	1.8	16	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm			3-STATE	16MX16	16M			BOTTOM		R-PBGA-B104						Not Qualified	268435456 bit						.34 Amp		53.6 ns
KM418RD8AC-SK70	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		262144 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	256KX18	256K		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	711 MHz	10.2 mm	Not Qualified	4718592 bit	2.37 V	AUTO/SELF REFRESH	e0				12 mm	45 ns
K4R761869A-FCS9	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm			3-STATE	32MX18	32M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm		13.4 mm	Not Qualified	603979776 bit	2.37 V	SELF CONTAINED REFRESH	e0				15.1 mm	35 ns
K4R271669B-MCG6	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	600 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0				12 mm	53.3 ns
K4R761869A-GCM8	Samsung	RAMBUS DRAM		92	FBGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			33554432 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm			3-STATE	32MX18	32M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B92	3					Not Qualified	603979776 bit			e1		260			40 ns
K4Y54044UF-JCC40	Samsung	RAMBUS DRAM		104	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	YES		1.8		4	GRID ARRAY, THIN PROFILE			1.27 mm				64MX4	64M			BOTTOM	1	R-PBGA-B104		1.89 V	1.13 mm		14 mm	Not Qualified	268435456 bit	1.71 V	SELF CONTAINED REFRESH					14.5 mm
K4R521669A-FCS9	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm			3-STATE	32MX16	32M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm		13.4 mm	Not Qualified	536870912 bit	2.37 V	SELF CONTAINED REFRESH	e0				15.1 mm	35 ns
K4R881869E-GCT90	Samsung	RAMBUS DRAM		92	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES		2.5		18	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm				16MX18	16M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B92	2	2.63 V	1 mm		9.3 mm	Not Qualified	301989888 bit	2.37 V	AUTO/SELF REFRESH	e1				15.1 mm
K4Y54164UF-JCA20	Samsung	RAMBUS DRAM		104	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES		1.8		16	GRID ARRAY, THIN PROFILE			1.27 mm				16MX16	16M			BOTTOM	1	R-PBGA-B104		1.89 V	1.13 mm		14 mm	Not Qualified	268435456 bit	1.71 V	SELF CONTAINED REFRESH					14.5 mm
K4R571669D-FCN10	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES		2.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm				16MX16	16M			BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm		9.3 mm	Not Qualified	268435456 bit	2.37 V	SELF CONTAINED REFRESH		30	240		15.1 mm
KM416RD8AD-RK70	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	711 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0				12 mm	45 ns
K4R441869B-NCK7T	Samsung	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX18	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				711 MHz		Not Qualified	150994944 bit			e0
K4R881869D-FCT90	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES		2.5		18	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm				16MX18	16M			BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm		9.3 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH					15.1 mm
K4Y50084UC-JCA2	Samsung	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		980 mA	67108864 words		COMMON	1.8	1.8	8	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel		3-STATE	64MX8	64M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B104	1					Not Qualified	536870912 bit			e3			.025 Amp		36 ns
K4R271669B-SCK8	Samsung	RAMBUS DRAM		54	LBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES		2.5		16	GRID ARRAY, LOW PROFILE			1.27 mm				8MX16	8M			BOTTOM	1	R-PBGA-B54		2.63 V	1.25 mm		11.8 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH					12 mm
K4R761869A-FCN1	Samsung	RAMBUS DRAM		92	FBGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			33554432 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm			3-STATE	32MX18	32M	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B92						Not Qualified	603979776 bit			e0					32 ns
K4R271669A-SCK8	Samsung	RAMBUS DRAM		54	LBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, LOW PROFILE	BGA54,7X9,50	DRAMs	1.27 mm			3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B54		2.63 V	1.25 mm	800 MHz	11.8 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0				12 mm	45 ns
K4R571669M-NCK7T	Samsung	RAMBUS DRAM		92	FBGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			16777216 words		COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm			3-STATE	16MX16	16M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B92				711 MHz		Not Qualified	268435456 bit			e0					45 ns
K4R881869D-FCS90	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES		2.5		18	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm				16MX18	16M			BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm		9.3 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH					15.1 mm
K4R881869D-FCM8	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm			3-STATE	16MX18	16M		TIN LEAD	BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm	800 MHz	9.3 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH	e0				15.1 mm	40 ns
K4Y50164UE-JCA2T	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		920 mA	33554432 words		COMMON	1.8	1.8	16	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel		3-STATE	32MX16	32M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B100	1					Not Qualified	536870912 bit			e3			.04 Amp		36 ns
KM49RC2H-A60	Samsung	RAMBUS DRAM		36	LSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	GULL WING	SYNCHRONOUS	500 mA	2097152 words		COMMON	3.3	3.3	9	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	SSOP72,.5	DRAMs	.65 mm			3-STATE	2MX9	2M		TIN LEAD	DUAL	1	R-PDSO-G36		3.45 V	1.7 mm	600 MHz		Not Qualified	18874368 bit	3.15 V		e0			.001 Amp	25.1 mm
K4Y50044UE-JCC4T	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1110 mA	134217728 words		COMMON	1.8	1.8	4	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel		3-STATE	128MX4	128M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B100	1					Not Qualified	536870912 bit			e3			.04 Amp		28 ns
K4R271669A-NCK8	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0				12 mm	45 ns
K4R571669E-GCM80	Samsung	RAMBUS DRAM		84	VFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES		2.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm				16MX16	16M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	2	2.63 V	1 mm		9.3 mm	Not Qualified	268435456 bit	2.37 V	SELF CONTAINED REFRESH	e1				13.5 mm
K4R881869A-FCS9	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm			3-STATE	16MX18	16M		TIN LEAD	BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm	1066 MHz	10.5 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH	e0				18 mm	35 ns
K4R761869A-GCM80	Samsung	RAMBUS DRAM		92	VFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	YES		2.5		18	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm				32MX18	32M			BOTTOM	1	R-PBGA-B92		2.63 V	1 mm		13.4 mm	Not Qualified	603979776 bit	2.37 V	SELF CONTAINED REFRESH		NOT SPECIFIED	NOT SPECIFIED		15.1 mm
KM416RD8C-RK80	Samsung	RAMBUS DRAM		62	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	800 MHz	11.5 mm	Not Qualified	134217728 bit	2.37 V	SELF REFRESH	e0				13.15 mm
K4Y50084UE-JCC4	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	67108864 words		COMMON	1.8	1.8	8	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel		3-STATE	64MX8	64M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B100	1					Not Qualified	536870912 bit			e3			.04 Amp		28 ns
K4R571669E-GCK80	Samsung	RAMBUS DRAM		84	VFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES		2.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm				16MX16	16M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	2	2.63 V	1 mm		9.3 mm	Not Qualified	268435456 bit	2.37 V	SELF CONTAINED REFRESH	e1				13.5 mm
K4Y50024UE-JCC4T	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1070 mA	268435456 words		COMMON	1.8	1.8	2	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel		3-STATE	256MX2	256M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B100	1					Not Qualified	536870912 bit			e3			.04 Amp		28 ns
K4Y50044UE-JCA20	Samsung	RAMBUS DRAM	OTHER	100	TFBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	ASYNCHRONOUS	740 mA	134217728 words	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel		3-STATE	128MX4	128M	0 Cel		BOTTOM	1	R-PBGA-B100		1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.04 Amp	14.5 mm	36 ns
K4Y50024UC-JCB3	Samsung	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1000 mA	268435456 words		COMMON	1.8	1.8	2	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel		3-STATE	256MX2	256M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B104	3					Not Qualified	536870912 bit			e1		260	.025 Amp		35 ns
K4Y54084UF-JCC30	Samsung	RAMBUS DRAM		104	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	YES		1.8		8	GRID ARRAY, THIN PROFILE			1.27 mm				32MX8	32M			BOTTOM	1	R-PBGA-B104		1.89 V	1.13 mm		14 mm	Not Qualified	268435456 bit	1.71 V	SELF CONTAINED REFRESH					14.5 mm
K4R571669A-FCM80	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES		2.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm				16MX16	16M			BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm		9.3 mm	Not Qualified	268435456 bit	2.37 V	SELF CONTAINED REFRESH					15.1 mm
K4R881869D-FCN1	Samsung	RAMBUS DRAM		92	FBGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			16777216 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm			3-STATE	16MX18	16M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B92				1200 MHz		Not Qualified	301989888 bit			e0					32 ns
K4R571669D-FCN9	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm			3-STATE	16MX16	16M		TIN LEAD	BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm	1066 MHz	9.3 mm	Not Qualified	268435456 bit	2.37 V	SELF CONTAINED REFRESH	e0				15.1 mm	32 ns
K4R881869M-NCG6T	Samsung	RAMBUS DRAM		92	FBGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			16777216 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm			3-STATE	16MX18	16M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B92				600 MHz		Not Qualified	301989888 bit			e0					53.3 ns
K4Y50164UC-JCB3T	Samsung	RAMBUS DRAM		104	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	YES		1.8		16	GRID ARRAY, THIN PROFILE			1.27 mm				32MX16	32M			BOTTOM	1	R-PBGA-B104		1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	SELF CONTAINED REFRESH					14.5 mm	35 ns
K4Y54084UF-JCA2	Samsung	RAMBUS DRAM		104	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	33554432 words		COMMON	1.8	1.8	8	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm			3-STATE	32MX8	32M			BOTTOM		R-PBGA-B104				300 MHz		Not Qualified	268435456 bit						.34 Amp		53.6 ns
K4Y50044UC-JCA2	Samsung	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		900 mA	134217728 words		COMMON	1.8	1.8	4	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel		3-STATE	128MX4	128M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B104	1					Not Qualified	536870912 bit			e3			.025 Amp		36 ns
K4R881869A-FCT90	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES		2.5		18	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm				16MX18	16M			BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm		10.5 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH					18 mm
K4R521669A-FCM9	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	YES		2.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm				32MX16	32M			BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm		13.4 mm	Not Qualified	536870912 bit	2.37 V	SELF CONTAINED REFRESH					15.1 mm
K4R881869D-FCCS9	Samsung	RAMBUS DRAM
K4R881869D-FCM9	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm			3-STATE	16MX18	16M		TIN LEAD	BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm	1066 MHz	9.3 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH	e0				15.1 mm	35 ns
K4Y50084UC-JCC40	Samsung	RAMBUS DRAM	OTHER	104	TBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	1360 mA	67108864 words	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE	BGA104,11X16,50/32	DRAMs	1.27 mm	100 Cel		3-STATE	64MX8	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B104	2	1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	SELF CONTAINED REFRESH	e1			.025 Amp	14.5 mm	28 ns
KM418RD8C-RG60	Samsung	RAMBUS DRAM		62	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	600 MHz	12.6 mm	Not Qualified	150994944 bit	2.37 V	SELF REFRESH	e0				13.15 mm
KM418RD8C-RK80	Samsung	RAMBUS DRAM		62	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	800 MHz	12.6 mm	Not Qualified	150994944 bit	2.37 V	SELF REFRESH	e0				13.15 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.