RAMBUS DRAM DRAM 438

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
HYB25M288180C-745	Infineon Technologies	RAMBUS DRAM		62	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE	BGA66,10X13,32	DRAMs	.8 mm			3-STATE	16MX18	16M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	711 MHz	10.5 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH	e0		11 mm	45 ns
HYB25R64160C-653	Infineon Technologies	RAMBUS DRAM		54	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			4194304 words		COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA54,8X9,40/32	DRAMs	.8 mm			3-STATE	4MX16	4M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B54			600 MHz		Not Qualified	67108864 bit			e0
HYB25R144180C-840	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	800 MHz	10.5 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0		11 mm	40 ns
HYB25M288180C-653	Infineon Technologies	RAMBUS DRAM		62	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE	BGA66,10X13,32	DRAMs	.8 mm			3-STATE	16MX18	16M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	600 MHz	10.5 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH	e0		11 mm	53 ns
HYB25R144180C-653	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	600 MHz	10.5 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0		11 mm	53 ns
HYB25M144180C-845	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	800 MHz	10.5 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0		11 mm	45 ns
HYB25R72180C-750	Infineon Technologies	RAMBUS DRAM		54	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			4194304 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA54,8X9,40/32	DRAMs	.8 mm			3-STATE	4MX18	4M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B54			711 MHz		Not Qualified	75497472 bit			e0
HYB25R288180C-745	Infineon Technologies	RAMBUS DRAM		62	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE	BGA66,10X13,32	DRAMs	.8 mm			3-STATE	16MX18	16M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	711 MHz	10.5 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH	e0		11 mm	45 ns
HYB25M128160C-845	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	800 MHz	10.5 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0		11 mm	45 ns
HYB25R72180C-840	Infineon Technologies	RAMBUS DRAM		54	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			4194304 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA54,8X9,40/32	DRAMs	.8 mm			3-STATE	4MX18	4M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B54			800 MHz		Not Qualified	75497472 bit			e0
HYB25R288180C-845	Infineon Technologies	RAMBUS DRAM		62	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE	BGA66,10X13,32	DRAMs	.8 mm			3-STATE	16MX18	16M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	800 MHz	10.5 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH	e0		11 mm	45 ns
HYB25M288180C-845	Infineon Technologies	RAMBUS DRAM		62	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE	BGA66,10X13,32	DRAMs	.8 mm			3-STATE	16MX18	16M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	800 MHz	10.5 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH	e0		11 mm	45 ns
HYB25R128160C-840	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	800 MHz	10.5 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0		11 mm	40 ns
HYB25M288180C-840	Infineon Technologies	RAMBUS DRAM		62	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE	BGA66,10X13,32	DRAMs	.8 mm			3-STATE	16MX18	16M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	800 MHz	10.5 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH	e0		11 mm	40 ns
HYB25R128160C-845	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	800 MHz	10.5 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0		11 mm	45 ns
HYB25M144180C-840	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	800 MHz	10.5 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0		11 mm	40 ns
HYB25M128160C-840	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	800 MHz	10.5 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0		11 mm	40 ns
HYB25R288180C-653	Infineon Technologies	RAMBUS DRAM		62	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE	BGA66,10X13,32	DRAMs	.8 mm			3-STATE	16MX18	16M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	600 MHz	10.5 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH	e0		11 mm	53 ns
HYB25R72180C-645	Infineon Technologies	RAMBUS DRAM		54	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			4194304 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA54,8X9,40/32	DRAMs	.8 mm			3-STATE	4MX18	4M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B54			600 MHz		Not Qualified	75497472 bit			e0
HYB25R64160C-845	Infineon Technologies	RAMBUS DRAM		54	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			4194304 words		COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA54,8X9,40/32	DRAMs	.8 mm			3-STATE	4MX16	4M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B54			800 MHz		Not Qualified	67108864 bit			e0
HYB25R288180C-840	Infineon Technologies	RAMBUS DRAM		62	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE	BGA66,10X13,32	DRAMs	.8 mm			3-STATE	16MX18	16M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	800 MHz	10.5 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH	e0		11 mm	40 ns
HYB25R128160C-653	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	600 MHz	10.5 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0		11 mm	53 ns
HYB25M144180C-653	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	600 MHz	10.5 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0		11 mm	53 ns
HYB25R64160C-840	Infineon Technologies	RAMBUS DRAM		54	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			4194304 words		COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA54,8X9,40/32	DRAMs	.8 mm			3-STATE	4MX16	4M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B54			800 MHz		Not Qualified	67108864 bit			e0
HYB25R144180C-745	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	711 MHz	10.5 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0		11 mm	45 ns
HYB25R144180C-845	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	800 MHz	10.5 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0		11 mm	45 ns
HYB25R72180C-745	Infineon Technologies	RAMBUS DRAM		54	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			4194304 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA54,8X9,40/32	DRAMs	.8 mm			3-STATE	4MX18	4M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B54			711 MHz		Not Qualified	75497472 bit			e0
HYB25M128160C-653	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	600 MHz	10.5 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0		11 mm	53 ns
HYB25R72180C-845	Infineon Technologies	RAMBUS DRAM		54	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			4194304 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA54,8X9,40/32	DRAMs	.8 mm			3-STATE	4MX18	4M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B54			800 MHz		Not Qualified	75497472 bit			e0
HYB25M144180C-745	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	711 MHz	10.5 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0		11 mm	45 ns
HYB25R72180C-653	Infineon Technologies	RAMBUS DRAM		54	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			4194304 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA54,8X9,40/32	DRAMs	.8 mm			3-STATE	4MX18	4M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B54			600 MHz		Not Qualified	75497472 bit			e0
HYB25M128160C-745	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	711 MHz	10.5 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0		11 mm	45 ns
HYB25R128160C-745	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	711 MHz	10.5 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0		11 mm	45 ns
TC59YM916AMG40B	Toshiba	RAMBUS DRAM		108	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	YES		1.8		16	GRID ARRAY, THIN PROFILE			1.27 mm				32MX16	32M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B108	1.86 V	1.2 mm			Not Qualified	536870912 bit	1.74 V	SELF CONTAINED REFRESH	e1
TC59R0409	Toshiba	RAMBUS DRAM		32	SIP		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS		524288 words			5		9	IN-LINE			.65 mm				512KX9	512K			SINGLE	1	R-PSIP-T32	5.5 V	11.5 mm		1.2 mm	Not Qualified	4718592 bit	4.5 V				25 mm
TC59RM718MB-8	Toshiba	RAMBUS DRAM		62	TFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX18	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1.2 mm	800 MHz	11.66 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0		12.92 mm
TC59R1809VK	Toshiba	RAMBUS DRAM	COMMERCIAL	32			RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	L BEND	SYNCHRONOUS		2097152 words	YES		3.3		9	VERTICAL SURFACE MOUNT				70 Cel			2MX9	2M	0 Cel	TIN LEAD	SINGLE	1	R-PSVP-L32	3.6 V				Not Qualified	18874368 bit	3 V	SELF REFRESH	e0
TC59YM916BKG32C	Toshiba	RAMBUS DRAM		100	TFBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	1450 mA	33554432 words	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA100,11X16,50/32	DRAMs	.8 mm			3-STATE	32MX16	32M			BOTTOM	1	R-PBGA-B100	1.86 V	1.2 mm		14.56 mm	Not Qualified	536870912 bit	1.74 V	SELF CONTAINED REFRESH		.00005 Amp	15.18 mm
TC59YM816BKG40B	Toshiba	RAMBUS DRAM		107	TFBGA	16384	SQUARE	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES	COMMON	1.8	1.8	16	MICROELECTRONIC ASSEMBLY	BGA104,11X16,50/32	DRAMs	.8 mm			3-STATE	16MX16	16M			DUAL	1	R-XDMA-N240	1.86 V	1.2 mm			Not Qualified	268435456 bit	1.74 V	AUTO/SELF REFRESH
TC59RM716MB-7	Toshiba	RAMBUS DRAM		62	TFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1.2 mm	711 MHz	11.66 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0		12.92 mm
TC59RM716MB-8	Toshiba	RAMBUS DRAM		62	TFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1.2 mm	800 MHz	11.66 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0		12.92 mm
TC59YM916AMG32A	Toshiba	RAMBUS DRAM		108	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	YES		1.8		16	GRID ARRAY, THIN PROFILE			1.27 mm				32MX16	32M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B108	1.86 V	1.2 mm			Not Qualified	536870912 bit	1.74 V	SELF CONTAINED REFRESH	e1
TC59RM718RB-8	Toshiba	RAMBUS DRAM		62	TFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX18	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1.2 mm	800 MHz	11.66 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0		12.92 mm
TC59R1609VK	Toshiba	RAMBUS DRAM		32	SIP		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS		2097152 words	YES		5		9	IN-LINE			.65 mm			3-STATE	2MX9	2M			SINGLE	1	R-PSIP-T32		11.7 mm		1.2 mm	Not Qualified	18874368 bit		SELF CONTAINED REFRESH; RAMBUS SIGNALING LOGIC INTERFACE			24.13 mm
TC59YM816BKG32A	Toshiba	RAMBUS DRAM		107	TFBGA	16384	SQUARE	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES	COMMON	1.8	1.8	16	MICROELECTRONIC ASSEMBLY	BGA104,11X16,50/32	DRAMs	.8 mm			3-STATE	16MX16	16M			DUAL	1	R-XDMA-N240	1.86 V	1.2 mm			Not Qualified	268435456 bit	1.74 V	AUTO/SELF REFRESH
TC59RM818MB-8	Toshiba	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm			3-STATE	16MX18	16M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B92	2.63 V	1.2 mm	800 MHz	9.057 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH	e0		17.349 mm	45 ns
TC59YM916AMG32B	Toshiba	RAMBUS DRAM		108	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	YES		1.8		16	GRID ARRAY, THIN PROFILE			1.27 mm				32MX16	32M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B108	1.86 V	1.2 mm			Not Qualified	536870912 bit	1.74 V	SELF CONTAINED REFRESH	e1
TC59YM916BKG40B	Toshiba	RAMBUS DRAM		100	TFBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA100,11X16,50/32	DRAMs	.8 mm			3-STATE	32MX16	32M			BOTTOM	1	R-PBGA-B100	1.86 V	1.2 mm		14.56 mm	Not Qualified	536870912 bit	1.74 V	SELF CONTAINED REFRESH			15.18 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.