RAMBUS DRAM DRAM 438

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
UPD488170LG6-A50	Renesas Electronics	RAMBUS DRAM	COMMERCIAL	72	SSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		480 mA	2097152 words		COMMON	3.3	3.3	9	SMALL OUTLINE, SHRINK PITCH	SSOP72,.5	DRAMs	.635 mm	70 Cel		3-STATE	2MX9	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G72				250 MHz		Not Qualified	18874368 bit			e0		.135 Amp
UPD488170LG6-A53	Renesas Electronics	RAMBUS DRAM	COMMERCIAL	72	SSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		510 mA	2097152 words		COMMON	3.3	3.3	9	SMALL OUTLINE, SHRINK PITCH	SSOP72,.5	DRAMs	.635 mm	70 Cel		3-STATE	2MX9	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G72				267 MHz		Not Qualified	18874368 bit			e0		.145 Amp
UPD488488FB-C60-53-DP1	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX18	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				600 MHz		Not Qualified	150994944 bit			e0
UPD488448FB-C71-45-DQ2	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words		COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				711 MHz		Not Qualified	134217728 bit			e0
UPD488448FF-C80-45-DQ1	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words		COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				800 MHz		Not Qualified	134217728 bit			e0
UPD488448FB-C80-45-DQ1	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words		COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				800 MHz		Not Qualified	134217728 bit			e0
UPD488448FB-C80-45-DQ2	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words		COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				800 MHz		Not Qualified	134217728 bit			e0
UPD488130LVN-A50	Renesas Electronics	RAMBUS DRAM		32				PLASTIC/EPOXY		YES		CMOS			480 mA	2097152 words		COMMON	3.3	3.3	8		SMSIP32,25	DRAMs	2.54 mm			3-STATE	2MX8	2M		Tin/Lead (Sn/Pb)	SINGLE						250 MHz		Not Qualified	16777216 bit			e0
UPD488448FF-C71-45-DQ1	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words		COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				711 MHz		Not Qualified	134217728 bit			e0
UPD488385FB-C80-45BF1	Renesas Electronics	RAMBUS DRAM		74	FBGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		700 mA	4194304 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY, FINE PITCH	BGA74,7X16,30	DRAMs	.75 mm			3-STATE	4MX18	4M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B74				800 MHz		Not Qualified	75497472 bit			e0		.006 Amp
UPD488448FB-C60-53-DQ1	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words		COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				600 MHz		Not Qualified	134217728 bit			e0
UPD488170LVN-A50-9	Renesas Electronics	RAMBUS DRAM	COMMERCIAL	32		1024		PLASTIC/EPOXY		YES		CMOS			480 mA	2097152 words		COMMON	3.3	3.3	9		SMSIP32,25	DRAMs	2.54 mm	70 Cel		3-STATE	2MX9	2M	0 Cel	Tin/Lead (Sn/Pb)	SINGLE						250 MHz		Not Qualified	18874368 bit			e0		.135 Amp
UPD488170LVN-A45	Renesas Electronics	RAMBUS DRAM	COMMERCIAL	32		1024		PLASTIC/EPOXY		YES		CMOS			440 mA	2097152 words		COMMON	3.3	3.3	9		SMSIP32,25	DRAMs	2.54 mm	70 Cel		3-STATE	2MX9	2M	0 Cel	Tin/Lead (Sn/Pb)	SINGLE						225 MHz		Not Qualified	18874368 bit			e0		.33 Amp
UPD488385-C60-45BF1	Renesas Electronics	RAMBUS DRAM		74	BGA			PLASTIC/EPOXY		YES		CMOS	BALL			4194304 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA74(UNSPEC)	DRAMs				3-STATE	4MX18	4M		Tin/Lead (Sn/Pb)	BOTTOM						600 MHz		Not Qualified	75497472 bit			e0
UPD488170VN-A40-9	Renesas Electronics	RAMBUS DRAM	OTHER	32		1024		PLASTIC/EPOXY		YES		CMOS				2097152 words		COMMON	3.3	3.3	9		SMSIP32,25	DRAMs	2.54 mm	100 Cel		3-STATE	2MX9	2M	0 Cel	Tin/Lead (Sn/Pb)	SINGLE						200 MHz		Not Qualified	18874368 bit			e0
UPD488170LG6-A60	Renesas Electronics	RAMBUS DRAM	COMMERCIAL	72	SSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		560 mA	2097152 words		COMMON	3.3	3.3	9	SMALL OUTLINE, SHRINK PITCH	SSOP72,.5	DRAMs	.635 mm	70 Cel		3-STATE	2MX9	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G72				300 MHz		Not Qualified	18874368 bit			e0		.16 Amp
UPD488385FB-C80-40BF1	Renesas Electronics	RAMBUS DRAM		74	FBGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		700 mA	4194304 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY, FINE PITCH	BGA74,7X16,30	DRAMs	.75 mm			3-STATE	4MX18	4M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B74				800 MHz		Not Qualified	75497472 bit			e0		.006 Amp
UPD488488FB-C80-45-DP1	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX18	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				800 MHz		Not Qualified	150994944 bit			e0
UPD488488FB-C71-45-DP2	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX18	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				711 MHz		Not Qualified	150994944 bit			e0
UPD488385-C60-53BF1	Renesas Electronics	RAMBUS DRAM		74	BGA			PLASTIC/EPOXY		YES		CMOS	BALL			4194304 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA74(UNSPEC)	DRAMs				3-STATE	4MX18	4M		Tin/Lead (Sn/Pb)	BOTTOM						600 MHz		Not Qualified	75497472 bit			e0
UPD488448FF-C60-53-DQ1	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words		COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				600 MHz		Not Qualified	134217728 bit			e0
UPD488130LG6-A50	Renesas Electronics	RAMBUS DRAM		72	SSOP		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		480 mA	2097152 words		COMMON	3.3	3.3	8	SMALL OUTLINE, SHRINK PITCH	SSOP72,.5	DRAMs	.635 mm			3-STATE	2MX8	2M		Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G72				250 MHz		Not Qualified	16777216 bit			e0
UPD488385-C80-40BF1	Renesas Electronics	RAMBUS DRAM		74	BGA			PLASTIC/EPOXY		YES		CMOS	BALL			4194304 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA74(UNSPEC)	DRAMs				3-STATE	4MX18	4M		Tin/Lead (Sn/Pb)	BOTTOM						800 MHz		Not Qualified	75497472 bit			e0
UPD488130LVN-A50-9	Renesas Electronics	RAMBUS DRAM		32				PLASTIC/EPOXY		YES		CMOS			480 mA	2097152 words		COMMON	3.3	3.3	8		SMSIP32,25	DRAMs	2.54 mm			3-STATE	2MX8	2M		Tin/Lead (Sn/Pb)	SINGLE						250 MHz		Not Qualified	16777216 bit			e0		.135 Amp
UPD488031LG6-A50	Renesas Electronics	RAMBUS DRAM	COMMERCIAL	36	SSOP		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		480 mA	1048576 words		COMMON	3.3	3.3	8	SMALL OUTLINE, SHRINK PITCH	SSOP36,.5	DRAMs	.635 mm	70 Cel		3-STATE	1MX8	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G36						Not Qualified	8388608 bit			e0		.135 Amp
UPD488130LVN-A45	Renesas Electronics	RAMBUS DRAM		32				PLASTIC/EPOXY		YES		CMOS			440 mA	2097152 words		COMMON	3.3	3.3	8		SMSIP32,25	DRAMs	2.54 mm			3-STATE	2MX8	2M		Tin/Lead (Sn/Pb)	SINGLE						225 MHz		Not Qualified	16777216 bit			e0
UPD488448FB-C71-45-DQ1	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words		COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				711 MHz		Not Qualified	134217728 bit			e0
K4R881869M-NCG6T	Samsung	RAMBUS DRAM		92	FBGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			16777216 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm			3-STATE	16MX18	16M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B92				600 MHz		Not Qualified	301989888 bit			e0				53.3 ns
K4Y50164UC-JCB3T	Samsung	RAMBUS DRAM		104	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	YES		1.8		16	GRID ARRAY, THIN PROFILE			1.27 mm				32MX16	32M			BOTTOM	1	R-PBGA-B104		1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	SELF CONTAINED REFRESH				14.5 mm	35 ns
K4Y54084UF-JCA2	Samsung	RAMBUS DRAM		104	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	33554432 words		COMMON	1.8	1.8	8	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm			3-STATE	32MX8	32M			BOTTOM		R-PBGA-B104				300 MHz		Not Qualified	268435456 bit					.34 Amp		53.6 ns
K4Y50044UC-JCA2	Samsung	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		900 mA	134217728 words		COMMON	1.8	1.8	4	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel		3-STATE	128MX4	128M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B104	1					Not Qualified	536870912 bit			e3		.025 Amp		36 ns
K4R881869A-FCT90	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES		2.5		18	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm				16MX18	16M			BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm		10.5 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH				18 mm
K4R521669A-FCM9	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	YES		2.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm				32MX16	32M			BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm		13.4 mm	Not Qualified	536870912 bit	2.37 V	SELF CONTAINED REFRESH				15.1 mm
K4R881869D-FCCS9	Samsung	RAMBUS DRAM
K4R881869D-FCM9	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm			3-STATE	16MX18	16M		TIN LEAD	BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm	1066 MHz	9.3 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH	e0			15.1 mm	35 ns
K4Y50084UC-JCC40	Samsung	RAMBUS DRAM	OTHER	104	TBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	1360 mA	67108864 words	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE	BGA104,11X16,50/32	DRAMs	1.27 mm	100 Cel		3-STATE	64MX8	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B104	2	1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	SELF CONTAINED REFRESH	e1		.025 Amp	14.5 mm	28 ns
KM418RD8C-RG60	Samsung	RAMBUS DRAM		62	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	600 MHz	12.6 mm	Not Qualified	150994944 bit	2.37 V	SELF REFRESH	e0			13.15 mm
KM418RD8C-RK80	Samsung	RAMBUS DRAM		62	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	800 MHz	12.6 mm	Not Qualified	150994944 bit	2.37 V	SELF REFRESH	e0			13.15 mm
K4R441869B-MCK7T	Samsung	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX18	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				711 MHz		Not Qualified	150994944 bit			e0
K4Y50024UE-JCA2	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		710 mA	268435456 words		COMMON	1.8	1.8	2	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel		3-STATE	256MX2	256M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B100	1					Not Qualified	536870912 bit			e3		.04 Amp		36 ns
K4Y50044UC-JCC4	Samsung	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1270 mA	134217728 words		COMMON	1.8	1.8	4	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel		3-STATE	128MX4	128M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B104	1					Not Qualified	536870912 bit			e3		.025 Amp		28 ns
K4Y50024UC-JCC40	Samsung	RAMBUS DRAM	OTHER	104	TBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	1210 mA	268435456 words	YES	COMMON	1.8	1.8	2	GRID ARRAY, THIN PROFILE	BGA104,11X16,50/32	DRAMs	1.27 mm	100 Cel		3-STATE	256MX2	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B104	2	1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	SELF CONTAINED REFRESH	e1		.025 Amp	14.5 mm	28 ns
K4Y54164UF-JCC30	Samsung	RAMBUS DRAM		104	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES		1.8		16	GRID ARRAY, THIN PROFILE			1.27 mm				16MX16	16M			BOTTOM	1	R-PBGA-B104		1.89 V	1.13 mm		14 mm	Not Qualified	268435456 bit	1.71 V	SELF CONTAINED REFRESH				14.5 mm
K4R881869E-GCT9000	Samsung	RAMBUS DRAM		92	FBGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		750 mA	16777216 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm			3-STATE	16MX18	16M			BOTTOM		R-PBGA-B92				1066 MHz		Not Qualified	301989888 bit							32 ns
K4Y50164UC-JCB3	Samsung	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1300 mA	33554432 words		COMMON	1.8	1.8	16	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel		3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B104	3					Not Qualified	536870912 bit			e1	260	.025 Amp		35 ns
K4Y50024UC-JCA2	Samsung	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		820 mA	268435456 words		COMMON	1.8	1.8	2	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel		3-STATE	256MX2	256M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B104	1					Not Qualified	536870912 bit			e3		.025 Amp		36 ns
K4R441869B-NCG6	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	600 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm	53.3 ns
K4R881869E-GCT9T	Samsung	RAMBUS DRAM		92	VFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES		2.5		18	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm				16MX18	16M			BOTTOM	1	R-PBGA-B92		2.63 V	1 mm		9.3 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH				15.1 mm	32 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.