RECTANGULAR DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
W631GG6NB-11	Winbond Electronics	DDR3 DRAM	OTHER	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	240 mA	67108864 words	8	YES	COMMON	1.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		3-STATE	64MX16	64M		0 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1 mm	933 MHz	7.5 mm		1073741824 bit	1.425 V					.045 Amp	8	13 mm	20 ns
W631GG6NB11I	Winbond Electronics	DDR3 DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	240 mA	67108864 words	8	YES	COMMON	1.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		3-STATE	64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1 mm	933 MHz	7.5 mm		1073741824 bit	1.425 V					.045 Amp	8	13 mm	20 ns
AS4C256M16D3B-12BINTR	Alliance Memory	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	55 mA	268435456 words	4,8	YES	COMMON	1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		3-STATE	256MX16	256M	1.425 V	-40 Cel		BOTTOM	1	R-PBGA-B96	3	1.575 V	1.2 mm	800 MHz	9 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH				.032 Amp	4,8	13.5 mm
AS4C512M16D3L-12BINTR	Alliance Memory	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	185 mA	536870912 words	4,8	YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		3-STATE	512MX16	512M	1.283 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm	800 MHz	9 mm		8589934592 bit	1.283 V		e1			.011 Amp	4,8	14 mm
HY57V281620HCLT-HI	Sk Hynix	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	220 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel		3-STATE	8MX16	8M		-40 Cel		DUAL	1	R-PDSO-G54		3.6 V	1.194 mm	133 MHz	10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	1,2,4,8	22.238 mm	5.4 ns
HYB25D512160BE-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		33554432 words	2,4,8	YES	COMMON	2.5	2,5	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel		3-STATE	32MX16	32M		0 Cel	MATTE TIN	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e3			.004 Amp	2,4,8	22.22 mm	.7 ns
IS42S16100C1-7TL	Integrated Silicon Solution	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	140 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M		0 Cel	MATTE TIN	DUAL	1	R-PDSO-G50		3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e3	10	260	.002 Amp	1,2,4,8	20.95 mm	5.5 ns
IS42S16100H-7TLI	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	50	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	70 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	85 Cel		3-STATE	1MX16	1M		-40 Cel		DUAL	1	R-PDSO-G50		3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	16777216 bit	3 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH				.0035 Amp	1,2,4,8	20.95 mm	5.5 ns
IS42S16400J-6TL	Integrated Silicon Solution	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	80 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		.8 mm	70 Cel	NO	3-STATE	4MX16	4M		0 Cel		DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH					1,2,4,8	22.22 mm	5.4 ns
IS42S16800F-6TL	Integrated Silicon Solution	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	120 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	8MX16	8M		0 Cel	MATTE TIN	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e3	30	260	.002 Amp	1,2,4,8	22.22 mm	5.4 ns
IS42S32400F-7TL	Integrated Silicon Solution	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	160 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20	DRAMs	.5 mm	70 Cel		3-STATE	4MX32	4M		0 Cel	MATTE TIN	DUAL	1	R-PDSO-G86	3	3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e3	30	260	.002 Amp	1,2,4,8	22.22 mm	5.4 ns
IS43LD16640C-25BLI	Integrated Silicon Solution	LPDDR2 DRAM	INDUSTRIAL	134	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.65 mm	85 Cel			64MX16	64M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B134		1.3 V	1.1 mm		10 mm		1073741824 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	e1	10	260			11.5 mm
IS43LD32128B-25BLI	Integrated Silicon Solution	LPDDR2 DRAM		134	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	4,8,16	YES	COMMON	1.2		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA134,10X17,25		.65 mm	85 Cel		3-STATE	128MX32	128M		-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	1.1 mm	400 MHz	10 mm		4294967296 bit	1.14 V	also operates with 1.8v nom supply			260		4,8,16	11.5 mm
IS43LD32640B-18BLI-TR	Integrated Silicon Solution	LPDDR2 DRAM	INDUSTRIAL	134	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.2		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.65 mm	85 Cel			64MX32	64M		-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	1.1 mm		10 mm		2147483648 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
IS43LQ16128A-062BLI	Integrated Silicon Solution	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	16,32	NO	COMMON			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	95 Cel			128MX16	128M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.95 V	.85 mm	1600 MHz	10 mm		2147483648 bit	1.7 V	terminal pitch-max					16,32	14.5 mm
IS43QR16512A-083TBL	Integrated Silicon Solution	DDR DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	353 mA	536870912 words	4,8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		3-STATE	512MX16	512M		0 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1200 MHz	10 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	260	.025 Amp	4,8	14 mm
IS43TR16128C-15HBL	Integrated Silicon Solution	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			128MX16	128M		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96	3	1.575 V	1.2 mm		9 mm		2147483648 bit	1.425 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	e1	10	260			13 mm
IS43TR81024BL-107MBL	Integrated Silicon Solution	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel			1GX8	1G		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78	3	1.45 V	1.2 mm		10 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1	10	260			14 mm
IS46TR16256BL-125KBLA2	Integrated Silicon Solution	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	105 Cel			256MX16	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm		9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			13 mm
K4A4G165WE-BIWE	Samsung	DDR4 DRAM	INDUSTRIAL	96			RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL			268435456 words				1.2		16					95 Cel			256MX16	256M		-40 Cel		BOTTOM	1	R-PBGA-B96							4294967296 bit
K4A4G165WF-BCTD	Samsung	DDR4 DRAM	OTHER	96			RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL			268435456 words				1.2		16					85 Cel			256MX16	256M		0 Cel		BOTTOM	1	R-PBGA-B96							4294967296 bit
K4S281632O-LI75	Samsung	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		100 mA	8388608 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel		3-STATE	8MX16	8M		-40 Cel		DUAL		R-PDSO-G54	3			133 MHz		Not Qualified	134217728 bit					260	.002 Amp	1,2,4,8		5.4 ns
M12L2561616A-6TG2A	Elite Semiconductor Microelectronics Technologyinc	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel			16MX16	16M		0 Cel		DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		268435456 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	5.4 ns
M393A4K40DB3-CWE	Samsung	DDR4 DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		4294967296 words				1.2		72	MICROELECTRONIC ASSEMBLY							4GX72	4G				DUAL	1	R-XDMA-N288							274877906944 bit
MT40A1G16HBA-083E:A	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			1GX16	1G		0 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		9.5 mm		17179869184 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			14 mm
MT40A1G8WE-075E:B	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	63 mA	1073741824 words	8	YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32		.8 mm	95 Cel			1GX8	1G		0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1333.33 MHz	8 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH				.046 Amp	8	12 mm
MT40A1G8WE-075E:BTR	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	63 mA	1073741824 words	8	YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32		.8 mm	95 Cel			1GX8	1G		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1333.33 MHz	8 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.046 Amp	8	12 mm
MT40A1G8WE-075E:D	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			1GX8	1G		0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		8 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH						12 mm
MT40A1G8WE-075EAIT:B	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	182 mA	1073741824 words	8	YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		3-STATE	1GX8	1G		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1333 MHz	8 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.025 Amp	8	12 mm
MT40A1G8WE-075EAIT:BTR	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	149 mA	1073741824 words	8	YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel			1GX8	1G		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1333.33 MHz	8 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.025 Amp	8	12 mm
MT40A1G8WE-075EIT:B	Micron Technology	DDR4 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			1GX8	1G		-40 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		8 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH						12 mm
MT40A1G8WE-083E:B	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32		.8 mm	85 Cel	NO		1GX8	1G		0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		8 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		8	12 mm
MT40A1G8WE-083E:BTR	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	175 mA	1073741824 words	8	YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel			1GX8	1G		0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1200.48 MHz	8 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.034 Amp	8	12 mm
MT40A1G8WE-083EAAT:B	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	184 mA	1073741824 words	8	YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	105 Cel		3-STATE	1GX8	1G		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1200 MHz	8 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.027 Amp	8	12 mm
MT40A1G8WE-083EAAT:BTR	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	138 mA	1073741824 words	8	YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	105 Cel			1GX8	1G		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1200.4 MHz	8 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.025 Amp	8	12 mm
MT40A1G8WE-083EAIT:B	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	182 mA	1073741824 words	8	YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		3-STATE	1GX8	1G		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1200 MHz	8 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.025 Amp	8	12 mm
MT40A1G8WE-083EAUT:B	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	192 mA	1073741824 words	8	YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	125 Cel		3-STATE	1GX8	1G		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1200 MHz	8 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.042 Amp	8	12 mm
MT40A1G8WE-083EAUT:BTR	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	138 mA	1073741824 words	8	YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	125 Cel			1GX8	1G		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1200.4 MHz	8 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.025 Amp	8	12 mm
MT40A1G8WE-083EIT:B	Micron Technology	DDR4 DRAM	INDUSTRIAL	78	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32		.8 mm	85 Cel	NO		1GX8	1G		-40 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		8 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		8	12 mm
MT40A2G8VA-062EIT:BTR	Micron Technology	DDR4 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words		YES		1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel			2GX8	2G		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		10 mm		17179869184 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260			11 mm
MT40A512M16JY-083EAIT:BTR	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	255 mA	536870912 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel			512MX16	512M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1200.4 MHz	8 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.025 Amp	8	14 mm
MT40A512M16TD-062EAUT:R	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	.225 mA	536870912 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	125 Cel			512MX16	512M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1600 MHz	7.5 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH				.03 Amp	8	13 mm
MT41J128M16HA-107G:D	Micron Technology	DDR3 DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm				128MX16	128M				BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		9 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH						14 mm
MT41J128M16HA-15EAAT:D	Micron Technology	DDR3 DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	425 mA	134217728 words	8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel		3-STATE	128MX16	128M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm	667 MHz	9 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1			.012 Amp	8	14 mm	.255 ns
MT41J128M16HA-15EIT:D	Micron Technology	DDR3 DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	425 mA	134217728 words	8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel		3-STATE	128MX16	128M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm	667 MHz	9 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1	30	260	.012 Amp	8	14 mm	.255 ns
MT41K512M16HA-107AIT:A	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			512MX16	512M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		9 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH						14 mm
MT42L64M32D2HE-18AAT:D	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	400 mA	67108864 words	4,8,16	YES	COMMON	1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA134,10X17,25		.65 mm	105 Cel		3-STATE	64MX32	64M		-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	1 mm	533 MHz	10 mm		2147483648 bit	1.14 V					.01 Amp	4,8,16	11.5 mm
MT42L64M32D2HE-18AUT:D	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	400 mA	67108864 words	4,8,16	YES	COMMON	1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA134,10X17,25		.65 mm	125 Cel		3-STATE	64MX32	64M		-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	1 mm	533 MHz	10 mm		2147483648 bit	1.14 V					.01 Amp	4,8,16	11.5 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.