Samsung DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4E660811C-TL50	Samsung	EDO DRAM	COMMERCIAL	32	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		8388608 words		YES		5		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel			8MX8	8M	0 Cel		DUAL	1	R-PDSO-G32		5.5 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH						20.95 mm	50 ns
KMM5408000AK-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words				5		40	MICROELECTRONIC ASSEMBLY					70 Cel		3-STATE	8MX40	8M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V				Not Qualified	335544320 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							70 ns
K4H281638E-TLB30	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		8388608 words		YES		2.5		16	SMALL OUTLINE, THIN PROFILE				.65 mm	70 Cel			8MX16	8M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm	.7 ns
K4E151611C-JC450	Samsung	EDO DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		150 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44		DRAMs	1.27 mm	70 Cel		3-STATE	1MX16	1M	0 Cel		DUAL		R-PDSO-J42						Not Qualified	16777216 bit						.001 Amp			45 ns
K4H510838B-ZLB00	Samsung	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		2.5		8	GRID ARRAY, THIN PROFILE				1 mm	70 Cel			64MX8	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2	2.7 V	1.2 mm		10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e1					12 mm	.75 ns
K4B2G0446D-HCMAT	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		135 mA	536870912 words	8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel		3-STATE	512MX4	512M	0 Cel		BOTTOM		R-PBGA-B78				933 MHz		Not Qualified	2147483648 bit						.012 Amp	8		.195 ns
K4S56163LF-XN1L0	Samsung	SYNCHRONOUS DRAM	OTHER	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel			16MX16	16M	-25 Cel		BOTTOM	1	R-PBGA-B54		2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH		30	240			11 mm	7 ns
M378T5663QZ3-CE7	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2280 mA	268435456 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40		DRAMs	1 mm	95 Cel		3-STATE	256MX64	256M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		400 MHz		Not Qualified	17179869184 bit	1.7 V	AUTO/SELF REFRESH			260	.24 Amp			.4 ns
KM416V1004ATR-L8	Samsung	EDO DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		3-STATE	1MX16	1M	0 Cel		DUAL	1	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH						20.95 mm	80 ns
M393T5750BY3-CCC	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	6600 mA	268435456 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		Other Memory ICs	1 mm	95 Cel		3-STATE	256MX72	256M	0 Cel	TIN SILVER COPPER	DUAL	1	R-XDMA-N240	3	1.9 V		200 MHz		Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH	e1		260				.6 ns
KMM377S3320T3-GH	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3800 mA	33554432 words		YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel		3-STATE	32MX72	32M	0 Cel		DUAL	2	R-XDMA-N168		3.6 V		100 MHz		Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH				.02 Amp			6 ns
K4M56163LG-BN1HT	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		110 mA	16777216 words	1,2,4,8,FP		COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32		DRAMs	.8 mm	85 Cel		3-STATE	16MX16	16M	-25 Cel	MATTE TIN	BOTTOM		S-PBGA-B54	1			111 MHz		Not Qualified	268435456 bit			e3			.001 Amp	1,2,4,8		7 ns
K4M56323LG-FF60	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		180 mA	8388608 words	1,2,4,8,FP		COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32		DRAMs	.8 mm	70 Cel			8MX32	8M	-25 Cel		BOTTOM		R-PBGA-B90	1			167 MHz		Not Qualified	268435456 bit						.001 Amp	1,2,4,8		5.4 ns
K4E641612E-TP600	Samsung	EDO DRAM	INDUSTRIAL	50	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	4194304 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	85 Cel		3-STATE	4MX16	4M	-40 Cel		DUAL		R-PDSO-G50						Not Qualified	67108864 bit						.0002 Amp			60 ns
KM416C1004AR-6	Samsung	EDO DRAM	COMMERCIAL	44	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	100 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32		DRAMs	.8 mm	70 Cel	YES	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		20.95 mm	60 ns
M466S1724BT2-L10	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	960 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel		3-STATE	16MX64	16M	0 Cel		ZIG-ZAG	1	R-XZMA-N144	1	3.6 V		100 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				.008 Amp			7 ns
K4J52324QC-BJ12	Samsung	DDR3 DRAM	OTHER	136	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1195 mA	16777216 words	4,8		COMMON	2	2	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32		DRAMs	.8 mm	85 Cel		3-STATE	16MX32	16M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B136	1			800 MHz		Not Qualified	536870912 bit			e3			.12 Amp	4,8		.23 ns
K4E660812E-JI45T	Samsung	EDO DRAM	INDUSTRIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		120 mA	8388608 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44		DRAMs	1.27 mm	85 Cel		3-STATE	8MX8	8M	-40 Cel		DUAL		R-PDSO-J32						Not Qualified	67108864 bit						.001 Amp			45 ns
KMM5321200AW-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	300 mA	1048576 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel		3-STATE	1MX32	1M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V	19.05 mm			Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.002 Amp			70 ns
KM418C256LJ-7	Samsung	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	150 mA	262144 words		NO	COMMON	5	5	18	SMALL OUTLINE	SOJ40,.44		DRAMs	1.27 mm	70 Cel		3-STATE	256KX18	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40		5.5 V	3.56 mm		10.16 mm	Not Qualified	4718592 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0002 Amp		26.035 mm	70 ns
K4E170812D-FC50	Samsung	EDO DRAM	COMMERCIAL	28	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	90 mA	2097152 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.34		DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		3.6 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp		18.41 mm	50 ns
K4E170411D-F5000	Samsung	EDO DRAM	COMMERCIAL	24	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				5		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel			4MX4	4M	0 Cel		DUAL	1	R-PDSO-G24		5.5 V	1.2 mm		7.62 mm		16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.14 mm	50 ns
M372V1600CJ0-C60	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1800 mA	16777216 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel		3-STATE	16MX72	16M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V	31.75 mm			Not Qualified	1207959552 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.03 Amp			60 ns
K4B510446E-ZCH0	Samsung
M53210800DB0-C60	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	656 mA	8388608 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel		3-STATE	8MX32	8M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V	25.4 mm			Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH				.016 Amp			60 ns
K4N56163QG-ZC2A	Samsung	GDDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		370 mA	16777216 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32		DRAMs	.8 mm	85 Cel		3-STATE	16MX16	16M	0 Cel		BOTTOM		R-PBGA-B84				350 MHz		Not Qualified	268435456 bit						.01 Amp	4,8		.45 ns
K4H560838N-LCB3	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	33554432 words	2,4,8		COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46		DRAMs	.635 mm	70 Cel		3-STATE	32MX8	32M	0 Cel	MATTE TIN	DUAL		R-PDSO-G66	3			166 MHz		Not Qualified	268435456 bit			e3	30	260	.003 Amp	2,4,8		.7 ns
K4F170411C-FC600	Samsung	FAST PAGE DRAM	COMMERCIAL	24	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				5		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel			4MX4	4M	0 Cel		DUAL	1	R-PDSO-G24		5.5 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		30	240			17.14 mm	60 ns
K4E660812D-JI60	Samsung	EDO DRAM	INDUSTRIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	100 mA	8388608 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44		DRAMs	1.27 mm	85 Cel		3-STATE	8MX8	8M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp		20.96 mm	60 ns
K4C89093AF-ACF50	Samsung	DDR1 DRAM	OTHER	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		9	GRID ARRAY, THIN PROFILE				1 mm	85 Cel			32MX9	32M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60		2.625 V	1.2 mm		10.5 mm	Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH	e0					15.5 mm	.6 ns
KMM5364003BK-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	810 mA	4194304 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel		3-STATE	4MX36	4M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V				Not Qualified	150994944 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.009 Amp			50 ns
K4M561633G-BL750	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	120 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32		DRAMs	.8 mm	70 Cel		3-STATE	16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54	3	3.6 V	1 mm	133 MHz	8 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH	e1		260	.001 Amp	1,2,4,8	11 mm	5.4 ns
KM44C256CSLJ-7	Samsung	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	65 mA	262144 words			COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J20		5.5 V	3.68 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0001 Amp		17.145 mm	70 ns
K4T1G164QG-BCF80	Samsung	DDR2 DRAM		84	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	170 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,9X15,32		DRAMs	.8 mm			3-STATE	64MX16	64M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1 mm	533 MHz	7.5 mm	Not Qualified	1073741824 bit	1.7 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	e1			.01 Amp	4,8	12.5 mm	.35 ns
M53230224CE2-C50	Samsung	EDO DRAM MODULE	COMMERCIAL	72			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words				5		32	MICROELECTRONIC ASSEMBLY					70 Cel			2MX32	2M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V				Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							50 ns
M485L6523MT0-CA2	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	70 Cel		3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N200	1	2.7 V		133 MHz		Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH							.75 ns
K4H561638D-ZLCC0	Samsung	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.6		16	GRID ARRAY, THIN PROFILE				1 mm	70 Cel			16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2	2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.5 V	AUTO/SELF REFRESH	e1					14 mm	.65 ns
K4T56163QI-ZLE60	Samsung	SYNCHRONOUS DRAM		84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm				16MX16	16M			BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		9 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm	.45 ns
K4S1G0632M-TC1L	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	340 mA	268435456 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	4	SMALL OUTLINE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	256MX4	256M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V		100 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH	e0			.01 Amp	1,2,4,8		6 ns
K4T1G084QR-HCF7T	Samsung	CACHE DRAM MODULE	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	285 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		DRAMs	.8 mm	85 Cel		3-STATE	128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B60	3	1.9 V	1.2 mm	400 MHz	10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH			260		4,8	11 mm	.4 ns
KMM5328000AVG-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words				5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel		3-STATE	8MX32	8M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V				Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							50 ns
KM41C16000ASLS-7	Samsung	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	70 mA	16777216 words		NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36		DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G24		5.5 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp		17.14 mm	70 ns
M471B1G73BH0-CH9	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1520 mA	1073741824 words			COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24		DRAMs	.6 mm	85 Cel		3-STATE	1GX64	1G	0 Cel		DUAL		R-PDMA-N204				667 MHz		Not Qualified	68719476736 bit									.255 ns
KMM5362003G-8	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		648 mA	2097152 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel		3-STATE	2MX36	2M	0 Cel		SINGLE		R-PSMA-N72			25.4 mm			Not Qualified	75497472 bit						.018 Amp			80 ns
KM416V4100BS-6	Samsung	FAST PAGE DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	110 mA	4194304 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G50		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp		20.95 mm	60 ns
KMM5324000VP-6	Samsung	FAST PAGE DRAM MODULE		72			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD			4194304 words						32	MICROELECTRONIC ASSEMBLY								4MX32	4M			SINGLE	1	R-XSMA-N72						Not Qualified	134217728 bit									60 ns
KM416C1200BT-L6	Samsung	FAST PAGE DRAM	COMMERCIAL	44	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	150 mA	1048576 words		YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp		20.95 mm	60 ns
KM41V16000CK-L5	Samsung	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	90 mA	16777216 words		YES	SEPARATE	3.3	3.3	1	SMALL OUTLINE	SOJ24/26,.34		DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		3.6 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp		17.15 mm	50 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.