Samsung DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
KM416C256BLLTR-8	Samsung	FAST PAGE DRAM	COMMERCIAL	40	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	75 mA	262144 words		YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G40		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.00015 Amp		18.41 mm	80 ns
KMM366S213DTS-G8	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2097152 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel			2MX64	2M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH							6 ns
K4E640812D-JP60	Samsung	EDO DRAM	INDUSTRIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	100 mA	8388608 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44		DRAMs	1.27 mm	85 Cel		3-STATE	8MX8	8M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.0002 Amp		20.96 mm	60 ns
M464S0924CT1-L75	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel			8MX64	8M	0 Cel		DUAL	1	R-XDMA-N144		3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH							5.4 ns
K4M56323LD-MG1H	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	290 mA	8388608 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32		DRAMs	.8 mm	85 Cel			8MX32	8M	-25 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B90		2.7 V	1.45 mm	105 MHz	11 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.0012 Amp	1,2,4,8	13 mm	7 ns
K4S641622A-TC80R0	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		200 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL		R-PDSO-G54	3			125 MHz		Not Qualified	67108864 bit			e0			.002 Amp	4,8		6 ns
M366S3323AT0-C1H	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel			32MX64	32M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH							6 ns
KM416V254BT-8	Samsung	EDO DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	60 mA	262144 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G40		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp		18.41 mm	80 ns
K4E660412E-JC60	Samsung	EDO DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	70 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44		DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp		20.96 mm	60 ns
K4H641638N-LCB30	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	200 mA	4194304 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46		DRAMs	.65 mm	70 Cel		3-STATE	4MX16	4M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp	2,4,8	22.22 mm	.7 ns
K4S643233H-FC600	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2097152 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	70 Cel			2MX32	2M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.4 mm		8 mm	Not Qualified	67108864 bit	2.7 V	AUTO/SELF REFRESH		30	240			13 mm	5.4 ns
M364E0404BT0-C60	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	440 mA	4194304 words			COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel		3-STATE	4MX64	4M	0 Cel		DUAL	1	R-XDMA-N168		5.5 V	25.4 mm			Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.03 Amp			60 ns
KM48V8104AS-L6	Samsung	EDO DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	140 mA	8388608 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		DRAMs	1.27 mm	70 Cel		3-STATE	8MX8	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0003 Amp		20.95 mm	60 ns
K4F640811B-JC500	Samsung	FAST PAGE DRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		8388608 words				5		8	SMALL OUTLINE				1.27 mm	70 Cel			8MX8	8M	0 Cel		DUAL	1	R-PDSO-J32		5.5 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		30	225			20.96 mm	50 ns
K4H1G0838A-ULA20	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	230 mA	134217728 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46		DRAMs	.65 mm	70 Cel		3-STATE	128MX8	128M	0 Cel		DUAL	1	R-PDSO-G66	3	2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH				.015 Amp	2,4,8	22.22 mm	.75 ns
KM41C16000ALK-8	Samsung	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	60 mA	16777216 words		NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24/26,.34		DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J24		5.5 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0003 Amp		17.145 mm	80 ns
K4H510438F-LC000	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		134217728 words		YES		2.5		4	SMALL OUTLINE, THIN PROFILE				.65 mm	70 Cel			128MX4	128M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm		536870912 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm
KMM5328100CSG-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words				5		32	MICROELECTRONIC ASSEMBLY					70 Cel			8MX32	8M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V				Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							60 ns
K4M28163LF-BE75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		155 mA	8388608 words	1,2,4,8,FP		COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32		DRAMs	.8 mm	85 Cel		3-STATE	8MX16	8M	-25 Cel		BOTTOM		S-PBGA-B54				133 MHz		Not Qualified	134217728 bit						.0005 Amp	1,2,4,8		5.4 ns
K4T1G084QQ-HCD60	Samsung	DDR2 DRAM	OTHER	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	95 Cel			128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm		9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH						11 mm	.45 ns
KMM332V410AT-L8	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	640 mA	4194304 words		NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	16	DRAMs	1.27 mm	70 Cel		3-STATE	4MX32	4M	0 Cel		DUAL	1	R-XDMA-N72		3.6 V	25.4 mm			Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.0024 Amp			80 ns
K4T51043QJ-BCE70	Samsung	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	140 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		DRAMs	.8 mm	85 Cel		3-STATE	128MX4	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2	1.9 V	1.2 mm	400 MHz	7.5 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1		260	.008 Amp	4,8	9.5 mm	.4 ns
M393B1K70CH0-CH9	Samsung	DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4940 mA	1073741824 words		YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		Other Memory ICs	1 mm	85 Cel		3-STATE	1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240	2	1.575 V	4 mm	667 MHz	30 mm	Not Qualified	77309411328 bit	1.425 V	AUTO/SELF REFRESH			260	1.042 Amp		133.35 mm	.255 ns
M466S0424CT0-L10	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	440 mA	4194304 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel		3-STATE	4MX64	4M	0 Cel		ZIG-ZAG	1	R-XZMA-N144		3.6 V		100 MHz		Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH				.004 Amp			7 ns
K4M28323PH-HG750JR	Samsung	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel			4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		8 mm	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH						13 mm	6 ns
K4B2G0446C-HYH90	Samsung	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	95 Cel			512MX4	512M	0 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		7.5 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH						11 mm	.225 ns
M470T6464AZ3-CE6	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1400 mA	67108864 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	95 Cel		3-STATE	64MX64	64M	0 Cel		ZIG-ZAG	1	R-XZMA-N200	2	1.9 V		333 MHz		Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH				.06 Amp			.45 ns
M312L2828ETS-CB0	Samsung	CACHE DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		5880 mA	134217728 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel		3-STATE	128MX72	128M	0 Cel		DUAL		R-PDMA-N184	1			133 MHz		Not Qualified	9663676416 bit									.75 ns
K4T51083QC-ZLCC	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			67108864 words	4,8		COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32		DRAMs	.8 mm	95 Cel		3-STATE	64MX8	64M	-5 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	536870912 bit			e3			.18 Amp	4,8		.6 ns
K4H641638Q-LLCC	Samsung	CACHE DRAM MODULE	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	4194304 words	2,4,8		COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46		DRAMs	.635 mm	70 Cel		3-STATE	4MX16	4M	0 Cel	MATTE TIN	DUAL		R-PDSO-G66	1			400 MHz		Not Qualified	67108864 bit			e3		260	.003 Amp	2,4,8		.65 ns
M470L3223DT0-CA2	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2240 mA	33554432 words		YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	70 Cel		3-STATE	32MX64	32M	0 Cel		DUAL	1	R-XDMA-N200	1	2.7 V		133 MHz		Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH							.75 ns
KM4216C258G-8	Samsung	VIDEO DRAM	COMMERCIAL	64	SSOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5	5	16	SMALL OUTLINE, SHRINK PITCH	SOP64,.54,32		Other Memory ICs	.8 mm	70 Cel			256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64		5.5 V	3 mm		11.43 mm	Not Qualified	4194304 bit	4.5 V		e0			.01 Amp		26.03 mm	80 ns
K4M281633H-RL1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		60 mA	8388608 words	1,2,4,8,FP		COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32		DRAMs	.8 mm	70 Cel		3-STATE	8MX16	8M	-25 Cel		BOTTOM		S-PBGA-B54	1			111 MHz		Not Qualified	134217728 bit						.0005 Amp	1,2,4,8		7 ns
KM41C16100LT-6	Samsung	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	110 mA	16777216 words		NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46		DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G24		5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.0003 Amp		18.41 mm	60 ns
KM41C16002ATR-6	Samsung	STATIC COLUMN DRAM	COMMERCIAL	24	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	GULL WING	ASYNCHRONOUS	80 mA	16777216 words		NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46		SRAMs	1.27 mm	70 Cel	YES	3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G24		5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		18.41 mm	60 ns
K4F640812E-JL600	Samsung	FAST PAGE DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		100 mA	8388608 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44		DRAMs	1.27 mm	70 Cel		3-STATE	8MX8	8M	0 Cel		DUAL		R-PDSO-J32						Not Qualified	67108864 bit						.0002 Amp			60 ns
M372F0405BT0-C60	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	600 mA	4194304 words		NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel		3-STATE	4MX72	4M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	301989888 bit	3 V	RAS ONLY, CAS BEFORE RAS, HIDDEN REFRESH				.03 Amp			60 ns
K4S56163LC-RL15	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	125 mA	16777216 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32		DRAMs	.8 mm	70 Cel		3-STATE	16MX16	16M	-25 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B54		2.7 V	1 mm	66 MHz	8.1 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.0005 Amp	1,2,4,8	15.1 mm	9 ns
M470T2953CZ3-LF7	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	95 Cel		3-STATE	128MX64	128M	0 Cel		ZIG-ZAG	1	R-XZMA-N200		1.9 V		400 MHz		Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED				.4 ns
KMM374F1680AK-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	2520 mA	16777216 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	36	DRAMs	1.27 mm	70 Cel		3-STATE	16MX72	16M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	1207959552 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.009 Amp			60 ns
KM44V16000AS-7	Samsung	FAST PAGE DRAM	COMMERCIAL	32	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	80 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp		20.95 mm	70 ns
M381L2923CUM-CB0	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3330 mA	134217728 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel		3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N184		2.7 V		133 MHz		Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED				.75 ns
K4X51163PG-FGC8T	Samsung	DDR1 DRAM	OTHER	60	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	100 mA	33554432 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32		DRAMs	.8 mm	85 Cel		3-STATE	32MX16	32M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	3	1.95 V	1 mm	200 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1		260	.000015 Amp	2,4,8,16	10 mm	5 ns
K4H1G0638B-TLA2T	Samsung	CACHE DRAM MODULE	COMMERCIAL	64	SSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		390 mA	268435456 words			COMMON	2.5	2.5	4	SMALL OUTLINE, SHRINK PITCH	SSOP66,.46		DRAMs	.635 mm	70 Cel		3-STATE	256MX4	256M	0 Cel		DUAL		R-PDSO-G66	3			133 MHz		Not Qualified	1073741824 bit					240	.01 Amp			.75 ns
M395T5163QZ4-CE69	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES	COMMON	1.5	1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		Other Memory ICs	1 mm	85 Cel		3-STATE	512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240	3	1.575 V		333 MHz		Not Qualified	38654705664 bit	1.455 V	AUTO/SELF REFRESH			260
K4S643222B-TC80R0	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	86	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		150 mA	2097152 words	1,2,4,8,FP		COMMON	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP86,.46,20		DRAMs	.5 mm	70 Cel		3-STATE	2MX32	2M	0 Cel	TIN LEAD	DUAL		R-PDSO-G86	3			125 MHz		Not Qualified	67108864 bit			e0			.001 Amp	1,2,4,8		6 ns
M392T5160QJA-CF7	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	6750 mA	536870912 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		DRAMs	1 mm	85 Cel		3-STATE	512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		400 MHz		Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH			260	.54 Amp			.4 ns
KM44C4003ALLJ-7	Samsung	FAST PAGE DRAM	COMMERCIAL	28	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	70 mA	4194304 words		YES	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.44		DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J28		5.5 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp		18.415 mm	70 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.