Samsung DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4M56163PG-RE75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		75 mA	16777216 words	1,2,4,8,FP		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32		DRAMs	.8 mm	85 Cel		3-STATE	16MX16	16M	-25 Cel		BOTTOM		S-PBGA-B54	1			133 MHz		Not Qualified	268435456 bit						.00001 Amp	1,2,4,8		6 ns
K4S56323LF-FC1H0	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel			8MX32	8M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH		30	240			13 mm	7 ns
KM48C2100CK-L5	Samsung	FAST PAGE DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	110 mA	2097152 words		YES	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34		DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.5 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.00025 Amp		18.42 mm	50 ns
KM48V2100ASLJ-6	Samsung	FAST PAGE DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	100 mA	2097152 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.44		DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J28		3.6 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp		18.42 mm	60 ns
M464S0824DT1-C1H	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	600 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel		3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N144	1	3.6 V		100 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				.008 Amp			6 ns
M393B5273BH1	Samsung	DDR3 DRAM
M312L3310FTS-CA0	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4820 mA	33554432 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel		3-STATE	32MX72	32M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		100 MHz		Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH				.36 Amp			.8 ns
M393T2950BG3-CD5	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	5900 mA	134217728 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		Other Memory ICs	1 mm	95 Cel		3-STATE	128MX72	128M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N240		1.9 V		267 MHz		Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e0			.784 Amp			.5 ns
M366S3323DTS-C7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1840 mA	33554432 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel		3-STATE	32MX64	32M	0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V		133 MHz		Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH				.032 Amp			5.4 ns
M381L2923BTM-LC4	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4725 mA	134217728 words		YES	COMMON	2.6	2.6	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel		3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		200 MHz		Not Qualified	9663676416 bit	2.5 V	AUTO/SELF REFRESH							.65 ns
M377S3227BT1-C1L0	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3060 mA	33554432 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel		3-STATE	32MX72	32M	0 Cel		DUAL		R-PDMA-N168				100 MHz		Not Qualified	2415919104 bit						.038 Amp			6 ns
KM48S8030BT-GH	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	150 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	8MX8	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0			.001 Amp	1,2,4,8	22.22 mm	6 ns
KM41C16000ASLTR-6	Samsung	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	80 mA	16777216 words		NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46		DRAMs	1.27 mm	70 Cel	YES	3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G24		5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp		18.41 mm	60 ns
KM416S8030BT-FL	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	210 mA	8388608 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	8MX16	8M	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G54		3.6 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	134217728 bit	3 V		e0			.001 Amp	1,2,4,8	22.22 mm	6 ns
KM418C256BJ-6	Samsung	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	95 mA	262144 words		NO	COMMON	5	5	18	SMALL OUTLINE	SOJ40,.44		DRAMs	1.27 mm	70 Cel		3-STATE	256KX18	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J40		5.5 V	3.76 mm		10.16 mm	Not Qualified	4718592 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		26.04 mm	60 ns
KM48V8100AJ-L7	Samsung	FAST PAGE DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	130 mA	8388608 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44		DRAMs	1.27 mm	70 Cel		3-STATE	8MX8	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0005 Amp		20.96 mm	70 ns
K4H280838C-TCB3	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	400 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46		DRAMs	.65 mm	70 Cel		3-STATE	16MX8	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0			.004 Amp	2,4,8	22.22 mm	.7 ns
K4M56163LG-RF1L0	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	8388608 words	1,2,4,8,FP	YES	COMMON	2.5	2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32		DRAMs	.8 mm	70 Cel		3-STATE	8MX16	8M	-25 Cel		BOTTOM	1	R-PBGA-B54		2.7 V	1 mm	111 MHz	8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH		30	240	.001 Amp	1,2,4,8	11 mm	7 ns
KM48V514DLT-8	Samsung	EDO DRAM	COMMERCIAL	28	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		524288 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		3-STATE	512KX8	512K	0 Cel		DUAL	1	R-PDSO-G28		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH						18.41 mm	80 ns
KM416C256BLJ-5	Samsung	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	110 mA	262144 words		NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44		DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40		5.25 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp		26.04 mm	50 ns
K4H561638H-ZLB3	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		330 mA	16777216 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32		DRAMs	.8 mm	70 Cel		3-STATE	16MX16	16M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			166 MHz		Not Qualified	268435456 bit			e3			.003 Amp	2,4,8		.7 ns
K4A8G045WB-BCTD0	Samsung	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2147483648 words		YES		1.2		4	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel			2GX4	2G	0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		7.5 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH						11 mm
M366S1723IUU-C7A	Samsung	DDR DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	880 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel		3-STATE	16MX64	16M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V		133 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.016 Amp			5.4 ns
K4E660812D-JI45T	Samsung	EDO DRAM		32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	120 mA	8388608 words		YES	COMMON	3.3		8	SMALL OUTLINE	SOJ32,.44			1.27 mm	85 Cel		3-STATE	8MX8	8M	-40 Cel		DUAL	1	R-PDSO-J32		3.6 V	3.76 mm		10.16 mm		67108864 bit	3 V					.001 Amp		20.96 mm	45 ns
K4E660412E-JI450	Samsung	EDO DRAM	INDUSTRIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		120 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44		DRAMs	1.27 mm	85 Cel		3-STATE	16MX4	16M	-40 Cel		DUAL		R-PDSO-J32						Not Qualified	67108864 bit						.0005 Amp			45 ns
KMM536512WG-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD		304 mA	524288 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel		3-STATE	512KX36	512K	0 Cel		SINGLE	1	R-XSMA-N72			25.4 mm			Not Qualified	18874368 bit						.004 Amp			60 ns
KM44V16100AJ-L6	Samsung	FAST PAGE DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	140 mA	16777216 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44		DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0005 Amp		20.96 mm	60 ns
KM44V16000AJ-7	Samsung	FAST PAGE DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	90 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44		DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp		20.96 mm	70 ns
K4D26323QG-GC33T	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		410 mA	4194304 words	2,4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32		DRAMs	.8 mm	65 Cel		3-STATE	4MX32	4M	0 Cel		BOTTOM		S-PBGA-B144				300 MHz		Not Qualified	134217728 bit						.01 Amp	2,4,8		.55 ns
KMM5328100BKG-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	816 mA	8388608 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel		3-STATE	8MX32	8M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V	25.4 mm			Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.016 Amp			60 ns
KM44V4000CS-L5	Samsung	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	90 mA	4194304 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36		DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G24		3.6 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp		17.14 mm	50 ns
M377S1620ET3-C1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2750 mA	16777216 words		YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel		3-STATE	16MX72	16M	0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V		100 MHz		Not Qualified	1207959552 bit	3 V	AUTO/SELF REFRESH				.02 Amp			6 ns
K4S64323LH-HL1H0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2097152 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	70 Cel			2MX32	2M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	2.7 V	1.4 mm		8 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH						13 mm	7 ns
K4S64323LH-HL1H	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		110 mA	2097152 words	1,2,4,8,FP		COMMON		1.8/2.5,2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32		DRAMs	.8 mm	70 Cel		3-STATE	2MX32	2M	-25 Cel		BOTTOM		R-PBGA-B90				105 MHz		Not Qualified	67108864 bit						.0005 Amp	1,2,4,8		7 ns
M393B5673GB0-YF8	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1608 mA	268435456 words		YES	COMMON	1.35	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		Other Memory ICs	1 mm	85 Cel		3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.15 mm	533 MHz	4 mm	Not Qualified	19327352832 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX				.69 Amp		133.35 mm	.3 ns
M383L1713BT0-CB0	Samsung	DDR DRAM MODULE	COMMERCIAL	184			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY					70 Cel			32MX72	32M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V				Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH							.75 ns
M393T3253FZA-CCC	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2885 mA	33554432 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		Other Memory ICs	1 mm	95 Cel		3-STATE	32MX72	32M	0 Cel	TIN SILVER COPPER	DUAL	1	R-XDMA-N240	3	1.9 V		200 MHz		Not Qualified	2415919104 bit	1.7 V	AUTO/SELF REFRESH	e1			.522 Amp			.6 ns
K4B2G1646Q-BCK0T	Samsung	DDR3 DRAM	OTHER	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		219 mA	134217728 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32		DRAMs	.8 mm	85 Cel		3-STATE	128MX16	128M	0 Cel		BOTTOM		R-PBGA-B96				800 MHz		Not Qualified	2147483648 bit						.011 Amp	8		.225 ns
KM44C1000BLT-6	Samsung	FAST PAGE DRAM	COMMERCIAL	20	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	90 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSSOP20/26,.36		DRAMs	1.27 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G20		5.5 V	1.2 mm		7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.0002 Amp		17.14 mm	60 ns
M392T5660DZA-CF7	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		5530 mA	268435456 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		DRAMs	1 mm	95 Cel		3-STATE	256MX72	256M	0 Cel		DUAL		R-PDMA-N240				400 MHz		Not Qualified	19327352832 bit					260	.27 Amp			.4 ns
M464S1724DTS-C1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	880 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel		3-STATE	16MX64	16M	0 Cel		DUAL	1	R-XDMA-N144		3.6 V		100 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				.016 Amp			6 ns
KM44C4002ALS-7	Samsung	STATIC COLUMN DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	GULL WING	ASYNCHRONOUS	70 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36		SRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G24		5.5 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0003 Amp		17.14 mm	70 ns
K4S641633H-BC1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		120 mA	4194304 words	1,2,4,8,FP		COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32		DRAMs	.8 mm	70 Cel		3-STATE	4MX16	4M	-25 Cel		BOTTOM		S-PBGA-B54				105 MHz		Not Qualified	67108864 bit						.0005 Amp	1,2,4,8		7 ns
K4B4G1646B-HCNB0	Samsung	DDR3 DRAM	OTHER	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			268435456 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32		DRAMs	.8 mm	85 Cel		3-STATE	256MX16	256M	0 Cel		BOTTOM		R-PBGA-B96				1066 MHz		Not Qualified	4294967296 bit							8		.18 ns
KM416V256ATR-8	Samsung	FAST PAGE DRAM	COMMERCIAL	40	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	80 mA	262144 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G40		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.0005 Amp		18.41 mm	80 ns
K4S643232H-UL55T	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	86	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		160 mA	2097152 words	1,2,4,8,FP		COMMON	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP86,.46,20		DRAMs	.5 mm	70 Cel		3-STATE	2MX32	2M	0 Cel		DUAL		R-PDSO-G86				182 MHz		Not Qualified	67108864 bit						.002 Amp	1,2,4,8		5 ns
K4B2G1646B-HPH9	Samsung	CACHE DRAM MODULE	INDUSTRIAL	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		300 mA	134217728 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32		DRAMs	.8 mm	95 Cel		3-STATE	128MX16	128M	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B96				667 MHz		Not Qualified	2147483648 bit			e1		260	.012 Amp	8		.255 ns
KM48V512BLT-7	Samsung	FAST PAGE DRAM	COMMERCIAL	28	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	65 mA	524288 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46		DRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0001 Amp		18.41 mm	70 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.