Samsung DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4S513233F-EL750JR	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	70 Cel		16MX32	16M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.4 mm		11 mm	Not Qualified	536870912 bit	2.7 V	AUTO/SELF REFRESH						13 mm	5.4 ns
K4F660812D-TL600	Samsung	FAST PAGE DRAM	COMMERCIAL	32	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	100 mA	8388608 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	0 Cel		DUAL	1	R-PDSO-G32		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH		30	240	.001 Amp		20.95 mm	60 ns
K4S513233F-MC750	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	70 Cel		16MX32	16M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.4 mm		11 mm	Not Qualified	536870912 bit	2.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm	5.4 ns
K4S561633F-XN1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		165 mA	16777216 words	1,2,4,8,FP		COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32		DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		S-PBGA-B54				105 MHz		Not Qualified	268435456 bit			e0			.0005 Amp	1,2,4,8		7 ns
M374S1623BT0-C1L0	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2430 mA	16777216 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M	0 Cel	TIN SILVER COPPER	DUAL		R-PDMA-N168	3			100 MHz		Not Qualified	1207959552 bit			e1			.018 Amp			7 ns
KM416C256SLZ-10	Samsung	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	105 mA	262144 words		NO	COMMON	5	5	16	IN-LINE	ZIP40,.1		DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40		5.5 V	12.07 mm		2.96 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0001 Amp			100 ns
KM4216V258G-70	Samsung	VIDEO DRAM		64	SSOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				3.3		16	SMALL OUTLINE, SHRINK PITCH				.8 mm			256KX16	256K			DUAL	2	R-PDSO-G64		3.6 V	3 mm		11.43 mm	Not Qualified	4194304 bit	3 V							26.03 mm	70 ns
M470T6554EZ3-LE6	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1120 mA	67108864 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	95 Cel	3-STATE	64MX64	64M	0 Cel		ZIG-ZAG	1	R-XZMA-N200		1.9 V		333 MHz		Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.064 Amp			.45 ns
KM44C16100BS-6K	Samsung	FAST PAGE DRAM	COMMERCIAL	32	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	16777216 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32						Not Qualified	67108864 bit			e0			.001 Amp			60 ns
K4B2G0846E-MCF70	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		200 mA	268435456 words			COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	0 Cel		BOTTOM		R-PBGA-B78				400 MHz		Not Qualified	2147483648 bit						.02 Amp			.4 ns
K4E661612D-TP60	Samsung	EDO DRAM	INDUSTRIAL	50	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	110 mA	4194304 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G50		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.0002 Amp		20.95 mm	60 ns
KMM332V400AJ-L8	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	480 mA	4194304 words		NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	0 Cel		DUAL	1	R-XDMA-N72		3.6 V	25.4 mm			Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.0024 Amp			80 ns
KM48H8030T-8	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		8388608 words	2,4,8	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46		DRAMs	.65 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G66		3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0			.02 Amp	2,4,8	22.22 mm
K4H560838D-GLA2	Samsung	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	280 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	8	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32		DRAMs	.8 mm	70 Cel	3-STATE	32MX8	32M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60		2.7 V	1.05 mm	133 MHz	8.1 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.003 Amp	2,4,8	15.1 mm	.75 ns
K4M56323PG-HC90	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		140 mA	8388608 words	1,2,4,8,FP		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32		DRAMs	.8 mm	70 Cel		8MX32	8M	-25 Cel	MATTE TIN	BOTTOM		R-PBGA-B90	1			111 MHz		Not Qualified	268435456 bit			e3			.0003 Amp	1,2,4,8		7 ns
K4U52324QE-BC08T	Samsung	GDDR4 DRAM	OTHER	136	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1190 mA	16777216 words	8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32		DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	0 Cel		BOTTOM		R-PBGA-B136				1200 MHz		Not Qualified	536870912 bit						.123 Amp	8		.19 ns
KM48S16030AT-F10	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		16MX8	16M	0 Cel		DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH						22.22 mm	7 ns
KMM366S104CTL-G0	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	460 mA	1048576 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	1MX64	1M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V		100 MHz		Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH				.004 Amp			8 ns
M312L3313ETS-LA0	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3270 mA	33554432 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N184		2.7 V		100 MHz		Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH	e0			1.06 Amp
KM44C4000ALLT-8	Samsung	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	60 mA	4194304 words		YES	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46		DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G24		5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp		18.41 mm	80 ns
K4M56323LD-EU1H	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	290 mA	8388608 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32		DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	2.7 V	1.45 mm	105 MHz	11 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH			260	.0012 Amp	1,2,4,8	13 mm	7 ns
KM4216V258GF-8	Samsung	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words		YES		3.3		16	SMALL OUTLINE, SHRINK PITCH				.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		3.6 V	3 mm		11.43 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 512 X 16 SAM PORT						26.03 mm	80 ns
K4E661612E-TP50	Samsung	EDO DRAM	INDUSTRIAL	50	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		4MX16	4M	-40 Cel		DUAL	1	R-PDSO-G50		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH						20.95 mm	50 ns
K4M511533E-YL750	Samsung	SYNCHRONOUS DRAM	OTHER	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		3		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel		32MX16	32M	-25 Cel		BOTTOM	1	R-PBGA-B54		3.6 V	1.2 mm		10 mm	Not Qualified	536870912 bit	2.7 V	AUTO/SELF REFRESH						11.5 mm	5.4 ns
KM416S4030CT-GLKZ	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		125 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54				100 MHz		Not Qualified	67108864 bit			e0			.001 Amp	1,2,4,8		6 ns
M372V1600CJ0-C50	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1980 mA	16777216 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V	31.75 mm			Not Qualified	1207959552 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.03 Amp			50 ns
K4S641632A-TL12	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		135 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL		R-PDSO-G54				83 MHz		Not Qualified	67108864 bit			e0			.002 Amp	4,8		8 ns
M474B5273DH0-CF8	Samsung	DDR DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				.6 mm	85 Cel		512MX72	512M	0 Cel		DUAL	1	R-XDMA-N204		1.575 V	30.13 mm		3.8 mm		38654705664 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX						67.6 mm
K4E661611B-TC60	Samsung	EDO DRAM	COMMERCIAL	50	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	90 mA	4194304 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G50		5.5 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		20.95 mm	60 ns
KM4132G271BQR-7	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	300 mA	262144 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9		DRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	143 MHz	14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	6 ns
K4S64323LH-FL60	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		120 mA	2097152 words	1,2,4,8,FP		COMMON		1.8/2.5,2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32		DRAMs	.8 mm	70 Cel	3-STATE	2MX32	2M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B90				166 MHz		Not Qualified	67108864 bit			e0			.0005 Amp	1,2,4,8		5.4 ns
KMM374F1600CK3-5	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1980 mA	16777216 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	1207959552 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.009 Amp			50 ns
KM44C1003CT-L6	Samsung	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	75 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G24		5.5 V	1.2 mm		7.62 mm	Not Qualified	4194304 bit	4.5 V		e0			.0002 Amp		17.14 mm	60 ns
KMM379S823CT-GL	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1025 mA	8388608 words		YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM200		DRAMs	1.27 mm	70 Cel	3-STATE	8MX72	8M	0 Cel		DUAL	1	R-XDMA-N200		3.6 V		100 MHz		Not Qualified	603979776 bit	3 V	AUTO/SELF REFRESH				.009 Amp			6 ns
K4S641633H-BF1L0	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	70 Cel		4MX16	4M	-25 Cel		BOTTOM	1	S-PBGA-B54	3	3.6 V	1 mm		8 mm	Not Qualified	67108864 bit	2.7 V	AUTO/SELF REFRESH						8 mm	7 ns
KM44S32030AT-FL	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	210 mA	33554432 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	32MX4	32M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0			.001 Amp	1,2,4,8	22.22 mm	6 ns
KMM5322100AUG-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words				5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	2MX32	2M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V				Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							60 ns
K4S56163LF-ZE1L0	Samsung	SYNCHRONOUS DRAM	OTHER	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	1	R-PBGA-B54	3	2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH						11 mm	7 ns
K4S641632D-TL70	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	140 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0			.001 Amp	1,2,4,8	22.22 mm	6 ns
M374S0823CTS-C80	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1125 mA	8388608 words		YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX72	8M	0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V		125 MHz		Not Qualified	603979776 bit	3 V	AUTO/SELF REFRESH				.009 Amp			6 ns
M463L1624BG0-CA0	Samsung
M393B2K70DM0-K00	Samsung	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				1 mm	85 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N240		1.45 V				Not Qualified	154618822656 bit	1.283 V	AUTO/SELF REFRESH						133.35 mm	.225 ns
KM44V16104AS-L7	Samsung	EDO DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	130 mA	16777216 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0005 Amp		20.95 mm	70 ns
K4E661612D-TL50	Samsung	EDO DRAM	COMMERCIAL	50	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	120 mA	4194304 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G50		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.0002 Amp		20.95 mm	50 ns
M393T2953BG0-CE6	Samsung	DDR DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY							128MX72	128M			DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	9663676416 bit	1.7 V	SELF CONTAINED REFRESH		30	230				.45 ns
K4M511633C-BG1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		180 mA	33554432 words	1,2,4,8,FP		COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32		DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-25 Cel		BOTTOM		S-PBGA-B54				111 MHz		Not Qualified	536870912 bit						.001 Amp	1,2,4,8		7 ns
M368L3223FTN-CA2	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N184		2.7 V		133 MHz		Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH	e0						.75 ns
K4H511638C-UCA2	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		345 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46		DRAMs	.635 mm	70 Cel	3-STATE	32MX16	32M	0 Cel		DUAL		R-PDSO-G66	3			133 MHz		Not Qualified	536870912 bit					260	.005 Amp	2,4,8		.75 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.