Samsung DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4G323222M-PC70	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	230 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9		DRAMs	.65 mm	70 Cel		3-STATE	1MX32	1M	0 Cel		QUAD	1	R-PQFP-G100	1	3.6 V	3 mm	143 MHz	14 mm	Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH				.002 Amp	4,8	20 mm	5.5 ns
K4T1G084QD-ZLE60	Samsung	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	240 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		DRAMs	.8 mm	95 Cel		3-STATE	128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	333 MHz	9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		4,8	11 mm	.45 ns
K4E640412E-JC45	Samsung	EDO DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	120 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44		DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp		20.96 mm	45 ns
KM41C16000AT-8	Samsung	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	60 mA	16777216 words		NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46		DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G24		5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		18.41 mm	80 ns
KMM5322104BKU/BKUG-5	Samsung	EDO DRAM MODULE		72	SIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD			2097152 words				5		32	MICROELECTRONIC ASSEMBLY								2MX32	2M			SINGLE	1	R-XSMA-N72						Not Qualified	67108864 bit									50 ns
KM48V512DLT-6	Samsung	FAST PAGE DRAM	COMMERCIAL	28	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		524288 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		3-STATE	512KX8	512K	0 Cel		DUAL	1	R-PDSO-G28		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH						18.41 mm	60 ns
K4F661612E-TC45T	Samsung	FAST PAGE DRAM	COMMERCIAL	50	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		130 mA	4194304 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G50						Not Qualified	67108864 bit			e0			.0005 Amp			45 ns
KM416V4100C-S5	Samsung	FAST PAGE DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	120 mA	4194304 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G50		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp		20.95 mm	50 ns
K4F640412E-TL60	Samsung	FAST PAGE DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	100 mA	16777216 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.0002 Amp		20.95 mm	60 ns
K4H510838B-NLAA	Samsung	DDR1 DRAM	COMMERCIAL	54	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP54,.46,16		DRAMs	.4 mm	70 Cel		3-STATE	64MX8	64M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0			.005 Amp	2,4,8		.75 ns
KMM53616000BK-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1200 mA	16777216 words		NO	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel		3-STATE	16MX36	16M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V				Not Qualified	603979776 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.012 Amp			60 ns
M391B5673EH1-CH9	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2385 mA	268435456 words		YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		Other Memory ICs	1 mm	95 Cel		3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240	2	1.575 V		667 MHz		Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH				.18 Amp			.255 ns
M470T2953BY3-LCC	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1960 mA	134217728 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	95 Cel		3-STATE	128MX64	128M	0 Cel		ZIG-ZAG	1	R-XZMA-N200	2	1.9 V		200 MHz		Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH				.128 Amp			.6 ns
K4M641633K-BG1L0	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	100 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32		DRAMs	.8 mm	85 Cel		3-STATE	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54	2	3.6 V	1 mm	111 MHz	8 mm	Not Qualified	67108864 bit	2.7 V	AUTO/SELF REFRESH	e1			.0005 Amp	1,2,4,8	8 mm	7 ns
K4F640812E-TL60T	Samsung	FAST PAGE DRAM	COMMERCIAL	32	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	8388608 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		DRAMs	1.27 mm	70 Cel		3-STATE	8MX8	8M	0 Cel		DUAL		R-PDSO-G32						Not Qualified	67108864 bit						.0002 Amp			60 ns
KMM5324000AK-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words				5		32	MICROELECTRONIC ASSEMBLY					70 Cel		3-STATE	4MX32	4M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V				Not Qualified	134217728 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							50 ns
K4E640812E-TL45	Samsung	EDO DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	120 mA	8388608 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		DRAMs	1.27 mm	70 Cel		3-STATE	8MX8	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.0005 Amp		20.95 mm	45 ns
M395T2953EZ4-CE610	Samsung	DDR DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY								128MX72	128M			DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH
KM416V254DLJ-5	Samsung	EDO DRAM	COMMERCIAL	40	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words		YES		3.3		16	SMALL OUTLINE				1.27 mm	70 Cel			256KX16	256K	0 Cel		DUAL	1	R-PDSO-G40		3.6 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH						26.04 mm	50 ns
K4B2G1646Q-BIK0T	Samsung	DDR3 DRAM	INDUSTRIAL	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		219 mA	134217728 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32		DRAMs	.8 mm	85 Cel		3-STATE	128MX16	128M	-40 Cel		BOTTOM		R-PBGA-B96				800 MHz		Not Qualified	2147483648 bit						.011 Amp	8		.225 ns
M464S1724KUS-L7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	920 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel		3-STATE	16MX64	16M	0 Cel		DUAL	1	R-XDMA-N144	3	3.6 V		133 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH			260	.016 Amp			5.4 ns
KM44C1000BSLJ-6	Samsung	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	90 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20		5.5 V	3.68 mm		7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.0001 Amp		17.145 mm	60 ns
KM44V4004CK-L6	Samsung	EDO DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	80 mA	4194304 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24/26,.34		DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J24		3.6 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp		17.15 mm	60 ns
KM44V4104CK-L5	Samsung	EDO DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	110 mA	4194304 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24/26,.34		DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J24		3.6 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp		17.15 mm	50 ns
K4H1G1638M-TCB00	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words		YES		2.5		16	SMALL OUTLINE, THIN PROFILE				.65 mm	70 Cel			64MX16	64M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm	.75 ns
K4R881869A-FCM9	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,10X18,32		DRAMs	.8 mm			3-STATE	16MX18	16M		TIN LEAD	BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm	1066 MHz	10.5 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH	e0					18 mm	35 ns
K4S513233F-EL750	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	70 Cel			16MX32	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	3	3.6 V	1.4 mm		11 mm	Not Qualified	536870912 bit	2.7 V	AUTO/SELF REFRESH	e1		260			13 mm	5.4 ns
M471B5673EH1-CH9	Samsung	DDR DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY					85 Cel			256MX64	256M	0 Cel		DUAL	1	R-XDMA-N204		1.575 V	3.8 mm		30 mm	Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			67.6 mm
M383L2828ET1-CAA	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	6550 mA	134217728 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel		3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N184		2.7 V		133 MHz		Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH							.75 ns
KMM5364105BK-7	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	810 mA	4194304 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel		3-STATE	4MX36	4M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V				Not Qualified	150994944 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.009 Amp			70 ns
KM41C1000CLTR-7	Samsung	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	65 mA	1048576 words			SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSSOP20/26,.36		DRAMs	1.27 mm	70 Cel	YES	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G20		5.5 V	1.2 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0002 Amp		17.14 mm	70 ns
M366S0424FTS-C7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	540 mA	4194304 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel		3-STATE	4MX64	4M	0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V		133 MHz		Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH				.004 Amp			5.4 ns
KMM366S424BT-GH	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4194304 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel			4MX64	4M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH							10 ns
KMM364C410CS-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1600 mA	4194304 words			COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel		3-STATE	4MX64	4M	0 Cel		DUAL	1	R-XDMA-N168		5.5 V	25.4 mm			Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.03 Amp			60 ns
K4S641632H-UL75	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		135 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	4MX16	4M	0 Cel		DUAL		R-PDSO-G54	3			133 MHz		Not Qualified	67108864 bit					260	.001 Amp	1,2,4,8		5.4 ns
K4H511638J-LCICC	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.5		16	SMALL OUTLINE, THIN PROFILE				.65 mm	70 Cel			32MX16	32M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm		536870912 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm
KM44C4005BK-L7	Samsung	EDO DRAM	COMMERCIAL	28	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	70 mA	4194304 words		YES	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34		DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.5 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0003 Amp		18.42 mm	70 ns
M366F1680DJ2-C60	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1600 mA	16777216 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel		3-STATE	16MX64	16M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	1073741824 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.008 Amp			60 ns
M464S6453BK0-C1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1920 mA	67108864 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel		3-STATE	64MX64	64M	0 Cel		DUAL	1	R-XDMA-N144		3.6 V		100 MHz		Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.038 Amp			6 ns
K4M511533E-YF75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		190 mA	33554432 words	1,2,4,8,FP		COMMON	3	3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32		DRAMs	.8 mm	70 Cel		3-STATE	32MX16	32M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		S-PBGA-B54				133 MHz		Not Qualified	536870912 bit			e0			.0015 Amp	1,2,4,8		5.4 ns
KMM5324000AKVG-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words				5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel		3-STATE	4MX32	4M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V				Not Qualified	134217728 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							50 ns
M470T5267AZ3-CD5	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2720 mA	536870912 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	85 Cel		3-STATE	512MX64	512M	0 Cel		DUAL	1	R-XDMA-N200	3	1.9 V	30 mm	267 MHz	3.8 mm	Not Qualified	34359738368 bit	1.7 V	AUTO/SELF REFRESH; WD-MAX; SEATED HGT-NOM			260	.24 Amp		67.6 mm	.5 ns
K4E660411B-JC45	Samsung	EDO DRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		16777216 words				5		4	SMALL OUTLINE				1.27 mm	70 Cel			16MX4	16M	0 Cel		DUAL	1	R-PDSO-J32		5.5 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						20.96 mm	45 ns
K4D64163HF-TC50	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	320 mA	4194304 words	2,4,8	YES	COMMON	3.3	2.5,3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46		DRAMs	.65 mm	65 Cel		3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		3.465 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	67108864 bit	3.135 V	AUTO/SELF REFRESH	e0			.005 Amp	2,4,8	22.22 mm	.7 ns
KM48V8004BK-6TH	Samsung	EDO DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		110 mA	8388608 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44		DRAMs	1.27 mm	70 Cel		3-STATE	8MX8	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32						Not Qualified	67108864 bit			e0			.0005 Amp			60 ns
KM416V1204AT-L8	Samsung	EDO DRAM	COMMERCIAL	44	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	130 mA	1048576 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0003 Amp		18.41 mm	80 ns
KM44C4102TR-7	Samsung	STATIC COLUMN DRAM	COMMERCIAL	24	TSOP2-R	2048	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	GULL WING	ASYNCHRONOUS	100 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46		SRAMs	1.27 mm	70 Cel	YES	3-STATE	4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G24		5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.001 Amp		18.41 mm	70 ns
K4E660412D-TC500	Samsung	EDO DRAM	COMMERCIAL	32	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		16777216 words		YES		3.3		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel			16MX4	16M	0 Cel		DUAL	1	R-PDSO-G32		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH		30	240			20.95 mm	50 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.