Samsung DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MR18R0824BM0-CG6	Samsung	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40		DRAMs	1 mm			3-STATE	32MX18	32M			DUAL	1	R-XDMA-N184		2.63 V		600 MHz		Not Qualified	603979776 bit	2.37 V	SELF CONTAINED REFRESH							53.3 ns
K4T1G084QQ-HCF7	Samsung	DDR2 DRAM		60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		250 mA	134217728 words	4,8		COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32		DRAMs	.8 mm			3-STATE	128MX8	128M		TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3			400 MHz		Not Qualified	1073741824 bit			e1		260		4,8		.4 ns
M395T5160CZ4-CE65	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES	COMMON	1.8	1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		Other Memory ICs	1 mm	85 Cel		3-STATE	512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED
KM44V16004BK-5D	Samsung	EDO DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		100 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44		DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32						Not Qualified	67108864 bit			e0			.0005 Amp			50 ns
M312L3223DG0-LA2	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3780 mA	33554432 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel		3-STATE	32MX72	32M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		133 MHz		Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH				1.12 Amp			.75 ns
KMM5364005CK-60	Samsung	DRAM MODULE
KMM372C883BS-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	810 mA	8388608 words			COMMON	5	5	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel		3-STATE	8MX72	8M	0 Cel		DUAL	1	R-XDMA-N168		5.5 V				Not Qualified	603979776 bit	4.5 V	RAS ONLY/HIDDEN REFRESH; CAS BEFORE RAS REFRESH				.03 Amp			50 ns
K4F160811C-FL50	Samsung	FAST PAGE DRAM	COMMERCIAL	28	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	110 mA	2097152 words		YES	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.34		DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		5.5 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.00025 Amp		18.41 mm	50 ns
KM48C8100AS-5	Samsung	FAST PAGE DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	150 mA	8388608 words		NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		DRAMs	1.27 mm	70 Cel		3-STATE	8MX8	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		20.95 mm	50 ns
KM4216V255T-7	Samsung	VIDEO DRAM	COMMERCIAL	64	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				3.3		16	SMALL OUTLINE, THIN PROFILE				.65 mm	70 Cel		3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT						23.49 mm	70 ns
KM44C4100ASLJ-5	Samsung	FAST PAGE DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	110 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/28,.44		DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J24		5.5 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp		18.41 mm	50 ns
KM416S4020BT-G10	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	135 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0			.001 Amp	1,2,4,8	22.22 mm	7 ns
KM41C1001CTR-7	Samsung	NIBBLE MODE DRAM		20	TSOP2-R		RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	CMOS	GULL WING			1048576 words				5		1	SMALL OUTLINE, THIN PROFILE				1.27 mm				1MX1	1M			DUAL	1	R-PDSO-G20			1.2 mm		7.62 mm	Not Qualified	1048576 bit								17.14 mm	70 ns
K4H280838E-TCC4	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	330 mA	16777216 words	2,4,8	YES	COMMON	2.6	2.6	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46		DRAMs	.65 mm	70 Cel		3-STATE	16MX8	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	134217728 bit	2.5 V	AUTO/SELF REFRESH	e0			.003 Amp	2,4,8	22.22 mm	.7 ns
KMM5364003BK/BKG-7	Samsung	FAST PAGE DRAM MODULE		72	SIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD			4194304 words				5		36	MICROELECTRONIC ASSEMBLY								4MX36	4M			SINGLE	1	R-XSMA-N72						Not Qualified	150994944 bit									70 ns
M381L6423FTM-LA2	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2660 mA	67108864 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel		3-STATE	64MX72	64M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N184		2.7 V		133 MHz		Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	e0						.75 ns
K4T1G164QJ-BCE70	Samsung	DDR2 DRAM	OTHER	84	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel			64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1 mm		7.5 mm		1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			12.5 mm	.4 ns
KMM366S424BT-G8	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4194304 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel			4MX64	4M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH							8 ns
K4E660812E-TI500	Samsung	EDO DRAM	INDUSTRIAL	32	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	8388608 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		DRAMs	1.27 mm	85 Cel		3-STATE	8MX8	8M	-40 Cel		DUAL		R-PDSO-G32						Not Qualified	67108864 bit						.001 Amp			50 ns
KM44C4010TR-7	Samsung	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	80 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46		DRAMs	1.27 mm	70 Cel	YES	3-STATE	4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G24		5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.001 Amp		18.41 mm	70 ns
KM48C2000ALTR-6	Samsung	FAST PAGE DRAM	COMMERCIAL	28	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	80 mA	2097152 words		NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46		DRAMs	1.27 mm	70 Cel	YES	3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G28		5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0003 Amp		18.41 mm	60 ns
K4T1G084QE-HCE6	Samsung	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	155 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		DRAMs	.8 mm	85 Cel		3-STATE	128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B60	3	1.9 V	1.2 mm	333 MHz	7.5 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH			260		4,8	9.5 mm	.45 ns
M464S0424DT1-L1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	400 mA	4194304 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel		3-STATE	4MX64	4M	0 Cel		DUAL	1	R-XDMA-N144	1	3.6 V	25.4 mm	100 MHz		Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH				.004 Amp			6 ns
KM416V4104AS-L6	Samsung	EDO DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	140 mA	4194304 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G50		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0003 Amp		20.95 mm	60 ns
K1C6416B2E-FI70T	Samsung
KM44C4103AJ-6	Samsung	FAST PAGE DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	100 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.44		DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J28		5.5 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		18.42 mm	60 ns
K4M64163PK-BF1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		50 mA	4194304 words	1,2,4,8,FP		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32		DRAMs	.8 mm	70 Cel		3-STATE	4MX16	4M	-25 Cel	MATTE TIN	BOTTOM		S-PBGA-B54	1			111 MHz		Not Qualified	67108864 bit			e3			.0003 Amp	1,2,4,8		7 ns
K4H560838H-ULB3	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		280 mA	33554432 words	2,4,8		COMMON	2.3	2.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46		DRAMs	.635 mm	70 Cel		3-STATE	32MX8	32M	0 Cel	MATTE TIN	DUAL		R-PDSO-G66	1			166 MHz		Not Qualified	268435456 bit			e3			.003 Amp	2,4,8		.7 ns
K4S561632H-UL60	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	200 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	16MX16	16M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G54	1	3.6 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e3			.002 Amp	1,2,4,8	22.22 mm	5 ns
M470L0914ET0-LB3	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1580 mA	8388608 words		YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	70 Cel		3-STATE	8MX64	8M	0 Cel		ZIG-ZAG	1	R-XZMA-N200	1	2.7 V		166 MHz		Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH				.012 Amp			.7 ns
M378T6553CZ0-CF7	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1960 mA	67108864 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40		DRAMs	1 mm	95 Cel		3-STATE	64MX64	64M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V		400 MHz		Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.064 Amp			.4 ns
M471B5273DH0-CMA	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1320 mA	536870912 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24		DRAMs	.6 mm	85 Cel		3-STATE	512MX64	512M	0 Cel		DUAL	1	R-XDMA-N204		1.575 V	30.15 mm	933 MHz	3.8 mm	Not Qualified	34359738368 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX				.192 Amp		67.6 mm	.195 ns
M386A4G40EM2-CPB/RC/TD	Samsung	DDR DRAM MODULE
KMM372C1680CK-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1440 mA	16777216 words			COMMON	5	5	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel		3-STATE	16MX72	16M	0 Cel		DUAL	1	R-XDMA-N168		5.5 V	53.34 mm			Not Qualified	1207959552 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.03 Amp			60 ns
KMM364E400BK-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1440 mA	4194304 words			COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel		3-STATE	4MX64	4M	0 Cel		DUAL	1	R-XDMA-N168		5.5 V	25.4 mm			Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.03 Amp			60 ns
M372F1600DJ0-C60	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1800 mA	16777216 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel		3-STATE	16MX72	16M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V	31.75 mm			Not Qualified	1207959552 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.03 Amp			60 ns
M391T6453FG0-LE6	Samsung	DDR DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY								64MX72	64M			DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH							.45 ns
M366S3953MTS-C1H	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2880 mA	134217728 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel		3-STATE	128MX64	128M	0 Cel		DUAL		R-PDMA-N168				100 MHz		Not Qualified	8589934592 bit						.08 Amp			6 ns
M312L5628MT0-LA0	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4080 mA	268435456 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		Other Memory ICs	1.27 mm	70 Cel		3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		100 MHz		Not Qualified	19327352832 bit	2.3 V	AUTO/SELF REFRESH							.8 ns
KMM372C883AK-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1350 mA	8388608 words			COMMON	5	5	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel		3-STATE	8MX72	8M	0 Cel		DUAL	1	R-XDMA-N168		5.5 V				Not Qualified	603979776 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.03 Amp			50 ns
KM41V16000BS-L7	Samsung	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	70 mA	16777216 words		YES	SEPARATE	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36		DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G24		3.6 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0003 Amp		17.14 mm	70 ns
K4E171611C-TL50T	Samsung	EDO DRAM	COMMERCIAL	44	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	1048576 words		YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M	0 Cel		DUAL		R-PDSO-G44						Not Qualified	16777216 bit						.0002 Amp			50 ns
K4E171612C-TC600	Samsung	EDO DRAM	COMMERCIAL	44	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	1048576 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M	0 Cel		DUAL		R-PDSO-G44						Not Qualified	16777216 bit						.0005 Amp			60 ns
KM432S2030CT-F8	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	160 mA	2097152 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20		DRAMs	.5 mm	70 Cel		3-STATE	2MX32	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G86		3.6 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	22.22 mm	6 ns
K4H1G0838A-ULB00	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	230 mA	134217728 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46		DRAMs	.65 mm	70 Cel		3-STATE	128MX8	128M	0 Cel		DUAL	1	R-PDSO-G66	3	2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH				.015 Amp	2,4,8	22.22 mm	.75 ns
K4H511638C-UCA20	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	345 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46		DRAMs	.65 mm	70 Cel		3-STATE	32MX16	32M	0 Cel		DUAL	1	R-PDSO-G66	2	2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH				.005 Amp	2,4,8	22.22 mm	.75 ns
M366S3323IUU-C7A	Samsung	DDR DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1120 mA	33554432 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel		3-STATE	32MX64	32M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V		133 MHz		Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.032 Amp			5.4 ns
M366S0924MTS-C1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	800 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel		3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V		100 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				.004 Amp			6 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.