Texas Instruments DRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

SMJ55166-75HKC

Texas Instruments

VIDEO DRAM

MILITARY

64

GDFP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE WITH EDO

YES

1

CMOS

FLAT

ASYNCHRONOUS

262144 words

5

16

FLATPACK, GUARD RING

.5 mm

125 Cel

256KX16

256K

-55 Cel

DUAL

2

R-CDFP-F64

5.5 V

3.81 mm

10.985 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT

18.985 mm

75 ns

TM4164EL9-20L

Texas Instruments

DRAM MODULE

COMMERCIAL

30

256

RECTANGULAR

UNSPECIFIED

PAGE

NO

1

NMOS

THROUGH-HOLE

ASYNCHRONOUS

65536 words

COMMON

5

9

MICROELECTRONIC ASSEMBLY

SIP30,.2

DRAMs

2.54 mm

70 Cel

3-STATE

64KX9

64K

0 Cel

SINGLE

1

R-XSMA-T30

5.5 V

Not Qualified

589824 bit

4.5 V

RAS ONLY REFRESH

NOT SPECIFIED

NOT SPECIFIED

200 ns

TMS426169P-70DGE

Texas Instruments

EDO DRAM

COMMERCIAL

44

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

80 mA

1048576 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

1

R-PDSO-G44

3.6 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.0002 Amp

20.95 mm

70 ns

TMS44C250-10DZL

Texas Instruments

VIDEO DRAM

COMMERCIAL

28

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

262144 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

256KX4

256K

0 Cel

DUAL

2

R-PDSO-J28

5.5 V

3.76 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT

18.415 mm

100 ns

TMS46400-10DGB

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

20

TSOP2-R

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

1048576 words

3.3

4

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

1MX4

1M

0 Cel

DUAL

1

R-PDSO-G20

3.6 V

1.2 mm

7.62 mm

Not Qualified

4194304 bit

3 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

17.14 mm

100 ns

TM4EJ64NPU-60

Texas Instruments

EDO DRAM MODULE

COMMERCIAL

144

DIMM

8192

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

440 mA

4194304 words

NO

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM144,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX64

4M

0 Cel

DUAL

1

R-XDMA-N144

3.6 V

25.4 mm

Not Qualified

268435456 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.002 Amp

60 ns

TMS418169P-60DZ

Texas Instruments

EDO DRAM

COMMERCIAL

42

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

190 mA

1048576 words

YES

COMMON

5

5

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

1

R-PDSO-J42

5.5 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.0005 Amp

27.305 mm

60 ns

TM2SR72EPHBU

Texas Instruments

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2097152 words

3.3

72

MICROELECTRONIC ASSEMBLY

70 Cel

2MX72

2M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

Not Qualified

150994944 bit

3 V

7.5 ns

TM4256GP8-20L

Texas Instruments

DRAM MODULE

COMMERCIAL

30

SIMM

256

RECTANGULAR

UNSPECIFIED

PAGE

NO

1

NMOS

NO LEAD

ASYNCHRONOUS

262144 words

COMMON

5

5

8

MICROELECTRONIC ASSEMBLY

SIM30

DRAMs

2.54 mm

70 Cel

3-STATE

256KX8

256K

0 Cel

SINGLE

1

R-XSMA-N30

5.5 V

11.43 mm

Not Qualified

2097152 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

200 ns

TM497MBK36H-70

Texas Instruments

DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1160 mA

4194304 words

NO

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX36

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.527 mm

Not Qualified

150994944 bit

4.5 V

RAS ONLY/CAS BEFORE RAS REFRESH

.012 Amp

70 ns

TMS48C128-70DJ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

85 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOJ24/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

DUAL

1

R-PDSO-J24

5.5 V

3.76 mm

7.57 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.002 Amp

17.145 mm

70 ns

SMJ4C1024-12HLMT

Texas Instruments

FAST PAGE DRAM

MILITARY

20

SON

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

YES

1

MOS

NO LEAD

ASYNCHRONOUS

1048576 words

5

1

SMALL OUTLINE

1.27 mm

125 Cel

1MX1

1M

-55 Cel

DUAL

1

R-CDSO-N20

5.5 V

2.03 mm

8.89 mm

Not Qualified

1048576 bit

4.5 V

CAS BEFORE RAS REFRESH

17.145 mm

120 ns

TM4257GU8-20

Texas Instruments

TMS44100P-80DGB

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

20

TSOP2-R

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

4194304 words

YES

5

1

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

4MX1

4M

0 Cel

DUAL

1

R-PDSO-G20

5.5 V

1.2 mm

7.62 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH

17.14 mm

80 ns

TM248NBK36C-8

Texas Instruments

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

770 mA

2097152 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

2MX36

2M

0 Cel

SINGLE

R-PSMA-N72

Not Qualified

75497472 bit

.02 Amp

80 ns

TMX4461-12N

Texas Instruments

VIDEO DRAM

24

DIP

256

RECTANGULAR

PLASTIC/EPOXY

PAGE

NO

1

MOS

THROUGH-HOLE

ASYNCHRONOUS

65536 words

5

4

IN-LINE

2.54 mm

3-STATE

64KX4

64K

DUAL

2

R-PDIP-T24

5.08 mm

15.24 mm

Not Qualified

262144 bit

CAS BEFORE RAS/HIDDEN REFRESH; 256 X 4 SAM PORT

31.75 mm

120 ns

TMS45169P-70DZ

Texas Instruments

EDO DRAM

COMMERCIAL

40

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

160 mA

262144 words

YES

COMMON

5

5

16

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

R-PDSO-J40

Not Qualified

4194304 bit

NOT SPECIFIED

NOT SPECIFIED

.00035 Amp

70 ns

TM124FBK32F-60

Texas Instruments

EDO DRAM MODULE

COMMERCIAL

72

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1048576 words

YES

5

32

MICROELECTRONIC ASSEMBLY

16

70 Cel

3-STATE

1MX32

1M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

33554432 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

60 ns

TMS428160P-60DZ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

42

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

190 mA

1048576 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

1

R-PDSO-J42

3.6 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.0002 Amp

27.305 mm

60 ns

TMS416160P-80DZ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

42

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

70 mA

1048576 words

YES

COMMON

5

5

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

1

R-PDSO-J42

5.5 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.0005 Amp

27.305 mm

80 ns

TMS426800AP-50DGC

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

28

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

90 mA

2097152 words

YES

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP28,.46

DRAMs

1.27 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

DUAL

R-PDSO-G28

Not Qualified

16777216 bit

NOT SPECIFIED

NOT SPECIFIED

.00015 Amp

50 ns

TM248GBK32S-80L

Texas Instruments

EDO DRAM MODULE

COMMERCIAL

72

SIMM

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

2097152 words

5

32

MICROELECTRONIC ASSEMBLY

70 Cel

2MX32

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

67108864 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

80 ns

TMX4C1024-15DJ

Texas Instruments

FAST PAGE DRAM

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

1048576 words

5

1

SMALL OUTLINE

1.27 mm

3-STATE

1MX1

1M

DUAL

1

R-PDSO-J20

5.5 V

3.76 mm

7.57 mm

Not Qualified

1048576 bit

4.5 V

17.145 mm

150 ns

5962-9062202MUA

Texas Instruments

FAST PAGE DRAM

MILITARY

20

SON

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

YES

1

CMOS

MIL-STD-883

NO LEAD

ASYNCHRONOUS

4194304 words

5

1

SMALL OUTLINE

1.27 mm

125 Cel

4MX1

4M

-55 Cel

TIN LEAD

DUAL

1

R-CDSO-N20

5.5 V

1.93 mm

8.89 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

17.145 mm

100 ns

TMS416400P-60DGB

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

TSOP2-R

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

4194304 words

YES

5

4

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

4MX4

4M

0 Cel

DUAL

1

R-PDSO-G24

5.5 V

1.2 mm

7.62 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; BATTERY BACKUP; SELF REFRESH

17.14 mm

60 ns

TMS464160P-80DZ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

32

SOJ

8192

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

4194304 words

YES

3.3

16

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

DUAL

1

R-PDSO-J32

3.6 V

3.76 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

20.955 mm

80 ns

TMS44C256-10DJL

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

262144 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

256KX4

256K

0 Cel

DUAL

1

R-PDSO-J20

5.5 V

3.76 mm

7.57 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

17.145 mm

100 ns

TMS426160P-70DC

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

44

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

1048576 words

YES

3.3

16

SMALL OUTLINE, THIN PROFILE

.8 mm

70 Cel

1MX16

1M

0 Cel

DUAL

1

R-PDSO-G44

3.6 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

3 V

RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH

20.95 mm

70 ns

TMS4164-25NL

Texas Instruments

PAGE MODE DRAM

COMMERCIAL

16

DIP

256

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

65536 words

SEPARATE

5

5

1

IN-LINE

DIP16,.3

DRAMs

2.54 mm

70 Cel

3-STATE

64KX1

64K

0 Cel

DUAL

R-PDIP-T16

Not Qualified

65536 bit

NOT SPECIFIED

NOT SPECIFIED

250 ns

TM248NBK36C-7

Texas Instruments

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

870 mA

2097152 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

2MX36

2M

0 Cel

SINGLE

R-PSMA-N72

Not Qualified

75497472 bit

.02 Amp

70 ns

SMJ416400-80SV

Texas Instruments

FAST PAGE DRAM

MILITARY

24

ZIP

4096

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

4194304 words

5

4

IN-LINE

2.54 mm

125 Cel

3-STATE

4MX4

4M

-55 Cel

ZIG-ZAG

1

R-CZIP-T24

5.5 V

13.08 mm

2.92 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

31.75 mm

80 ns

TM248CBK32H-70

Texas Instruments

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

320 mA

2097152 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

2MX32

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.4 mm

Not Qualified

67108864 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.004 Amp

70 ns

SMJ44100-10JDBM

Texas Instruments

FAST PAGE DRAM

MILITARY

18

DIP

1024

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

ASYNCHRONOUS

80 mA

4194304 words

NO

SEPARATE

5

5

1

IN-LINE

DIP18,.3

DRAMs

2.54 mm

125 Cel

3-STATE

4MX1

4M

-55 Cel

DUAL

1

R-CDIP-T18

5.5 V

5.08 mm

7.62 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.004 Amp

22.86 mm

100 ns

5962-9754503NYX

Texas Instruments

SYNCHRONOUS DRAM

MILITARY

50

TSOP2

RECTANGULAR

PLASTIC/EPOXY

DUAL BANK PAGE BURST

YES

1

CMOS

MIL-STD-883

GULL WING

SYNCHRONOUS

1048576 words

3.3

16

SMALL OUTLINE, THIN PROFILE

.8 mm

125 Cel

1MX16

1M

-55 Cel

TIN LEAD

DUAL

1

R-PDSO-G50

3.465 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

3.135 V

AUTO REFRESH

e0

20.95 mm

12 ns

TMS44460P-80DJ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

80 mA

1048576 words

YES

COMMON

5

5

4

SMALL OUTLINE

SOJ24/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

1

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.0005 Amp

17.145 mm

80 ns

SMJ4464-15JDS

Texas Instruments

PAGE MODE DRAM

OTHER

18

DIP

256

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

PAGE

NO

1

NMOS

38535Q/M;38534H;883B

THROUGH-HOLE

ASYNCHRONOUS

65536 words

COMMON

5

5

4

IN-LINE

DIP18,.3

DRAMs

2.54 mm

110 Cel

3-STATE

64KX4

64K

-55 Cel

DUAL

1

R-CDIP-T18

5.5 V

5.08 mm

7.62 mm

Not Qualified

262144 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

22.606 mm

150 ns

TM4256HE4-15L

Texas Instruments

DRAM MODULE

COMMERCIAL

22

256

RECTANGULAR

UNSPECIFIED

PAGE

NO

1

NMOS

THROUGH-HOLE

ASYNCHRONOUS

68 mA

524288 words

SEPARATE

5

5

4

MICROELECTRONIC ASSEMBLY

SIP24,.2

DRAMs

2.54 mm

70 Cel

3-STATE

512KX4

512K

0 Cel

SINGLE

1

R-XSMA-T22

5.5 V

Not Qualified

2097152 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

150 ns

TMS416400PDJ-70

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

4194304 words

YES

5

4

SMALL OUTLINE

1.27 mm

70 Cel

4MX4

4M

0 Cel

DUAL

1

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

16777216 bit

4.5 V

CAS BEFORE RAS/SELF REFRESH

17.145 mm

70 ns

SMJ44C256-12FQMT

Texas Instruments

FAST PAGE DRAM

MILITARY

20

SON

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

YES

1

MOS

MIL-PRF-38535

NO LEAD

ASYNCHRONOUS

262144 words

5

4

SMALL OUTLINE

1.27 mm

125 Cel

256KX4

256K

-55 Cel

DUAL

1

R-CDSO-N20

5.5 V

2.34 mm

8.89 mm

Not Qualified

1048576 bit

4.5 V

CAS BEFORE RAS REFRESH

17.145 mm

120 ns

TMX44C259-12N

Texas Instruments

NIBBLE MODE DRAM

20

DIP

512

RECTANGULAR

PLASTIC/EPOXY

NIBBLE

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

262144 words

5

4

IN-LINE

2.54 mm

3-STATE

256KX4

256K

DUAL

1

R-PDIP-T20

5.5 V

5.08 mm

7.62 mm

Not Qualified

1048576 bit

4.5 V

24.325 mm

120 ns

TMS427800A-50DZ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

32

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

120 mA

2097152 words

NO

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ32,.44

DRAMs

1.27 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

DUAL

R-PDSO-J32

Not Qualified

16777216 bit

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

50 ns

TMS416160P-60DGE

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

44

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

90 mA

1048576 words

YES

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

1

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.0005 Amp

20.95 mm

60 ns

TMS427400DGA-80

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

4194304 words

3.3

4

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

4MX4

4M

0 Cel

DUAL

1

R-PDSO-G24

3.6 V

1.2 mm

7.62 mm

Not Qualified

16777216 bit

3 V

CAS BEFORE RAS

17.14 mm

80 ns

TMS426400DGA-60

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

4194304 words

3.3

4

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

4MX4

4M

0 Cel

DUAL

1

R-PDSO-G24

3.6 V

1.2 mm

7.62 mm

Not Qualified

16777216 bit

3 V

CAS BEFORE RAS

17.14 mm

60 ns

TMS55166-80DGH

Texas Instruments

VIDEO DRAM

COMMERCIAL

64

SSOP

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

185 mA

262144 words

5

5

16

SMALL OUTLINE, SHRINK PITCH

SOP64,.54,32

Other Memory ICs

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

5.5 V

2.38 mm

12.04 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT

NOT SPECIFIED

NOT SPECIFIED

.005 Amp

26.295 mm

80 ns

SMJ626162-12DGE

Texas Instruments

SYNCHRONOUS DRAM

MILITARY

50

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

DUAL BANK PAGE BURST

YES

1

CMOS

MIL-PRF-38535 Class N

GULL WING

SYNCHRONOUS

180 mA

1048576 words

1,2,4,8,FP

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP50,.46,32

DRAMs

.8 mm

125 Cel

3-STATE

1MX16

1M

-55 Cel

DUAL

1

R-PDSO-G50

3.465 V

1.2 mm

83 MHz

10.16 mm

Not Qualified

16777216 bit

3.135 V

AUTO REFRESH

NOT SPECIFIED

NOT SPECIFIED

.002 Amp

1,2,4,8

20.95 mm

8 ns

TMS426400-80DGA

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

50 mA

4194304 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP24/26,.36

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

DUAL

1

R-PDSO-G24

3.6 V

1.2 mm

7.62 mm

Not Qualified

16777216 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.0005 Amp

17.14 mm

80 ns

TMS416100P-60DJ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

16777216 words

5

1

SMALL OUTLINE

1.27 mm

70 Cel

16MX1

16M

0 Cel

DUAL

1

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

17.145 mm

60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.