Texas Instruments DRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

SMJ55166-70HKCM

Texas Instruments

VIDEO DRAM

MILITARY

64

GDFP

512

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE WITH EDO

YES

1

CMOS

38535Q/M;38534H;883B

FLAT

ASYNCHRONOUS

225 mA

262144 words

5

5

16

FLATPACK, GUARD RING

TPAK64,1.6SQ,20

Other Memory ICs

.5 mm

125 Cel

3-STATE

256KX16

256K

-55 Cel

DUAL

2

R-CDFP-F64

5.5 V

3.81 mm

10.985 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT

NOT SPECIFIED

NOT SPECIFIED

.012 Amp

18.985 mm

70 ns

TMS426800P-70DZ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

28

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

2097152 words

YES

3.3

8

SMALL OUTLINE

1.27 mm

70 Cel

2MX8

2M

0 Cel

DUAL

1

R-PDSO-J28

3.6 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

3 V

RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH

18.415 mm

70 ns

TM124BBK32S-70

Texas Instruments

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

720 mA

1048576 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX32

1M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.527 mm

Not Qualified

33554432 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.008 Amp

70 ns

TM248CBK32-70L

Texas Instruments

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

2097152 words

5

32

MICROELECTRONIC ASSEMBLY

70 Cel

2MX32

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

67108864 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

70 ns

TM4257GV9-12

Texas Instruments

TM124MBK36BK36E-70

Texas Instruments

TMS464160-80DGC

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

32

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

4194304 words

3.3

16

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

DUAL

1

R-PDSO-G32

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

20.95 mm

80 ns

5962-9062202MXX

Texas Instruments

FAST PAGE DRAM

MILITARY

20

DFP

RECTANGULAR

UNSPECIFIED

FAST PAGE

YES

1

CMOS

MIL-STD-883

FLAT

ASYNCHRONOUS

4194304 words

5

1

FLATPACK

1.27 mm

125 Cel

4MX1

4M

-55 Cel

DUAL

1

R-XDFP-F20

5.5 V

2.54 mm

12.45 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

17.78 mm

100 ns

TMS426409A-60DGA

Texas Instruments

EDO DRAM

COMMERCIAL

24

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

SYNCHRONOUS

90 mA

4194304 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP24/26,.36

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

DUAL

1

R-PDSO-G24

3.6 V

1.2 mm

7.62 mm

Not Qualified

16777216 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

17.14 mm

60 ns

TMS464409P-40DGC

Texas Instruments

EDO DRAM

COMMERCIAL

32

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

MOS

GULL WING

ASYNCHRONOUS

160 mA

16777216 words

YES

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

DRAMs

1.27 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

DUAL

1

R-PDSO-G32

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.00015 Amp

20.95 mm

40 ns

TMS417400PDGA-80

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

4194304 words

YES

5

4

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

4MX4

4M

0 Cel

DUAL

1

R-PDSO-G24

5.5 V

1.2 mm

7.62 mm

Not Qualified

16777216 bit

4.5 V

CAS BEFORE RAS/SELF REFRESH

17.14 mm

80 ns

TM124MBK36S-80L

Texas Instruments

FAST PAGE DRAM MODULE

COMMERCIAL

72

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1048576 words

5

36

MICROELECTRONIC ASSEMBLY

18

70 Cel

3-STATE

1MX36

1M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

37748736 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

80 ns

TMS428169A-60DGER

Texas Instruments

EDO DRAM

COMMERCIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

150 mA

1048576 words

NO

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

R-PDSO-G44

Not Qualified

16777216 bit

.001 Amp

60 ns

TMS4256-20FML

Texas Instruments

PAGE MODE DRAM

COMMERCIAL

18

QCCJ

256

RECTANGULAR

PLASTIC/EPOXY

PAGE

YES

1

NMOS

J BEND

ASYNCHRONOUS

262144 words

SEPARATE

5

5

1

CHIP CARRIER

LDCC18,.33X.53

DRAMs

1.27 mm

70 Cel

3-STATE

256KX1

256K

0 Cel

QUAD

1

R-PQCC-J18

5.5 V

3.53 mm

7.366 mm

Not Qualified

262144 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

12.446 mm

200 ns

TMS416400P-60DJ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

80 mA

4194304 words

YES

COMMON

5

5

4

SMALL OUTLINE

SOJ24/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

DUAL

1

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/BATTERY BACKUP/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.0005 Amp

17.145 mm

60 ns

TMS46400PDGA-60

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

20

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

1048576 words

YES

3.3

4

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

1MX4

1M

0 Cel

DUAL

1

R-PDSO-G20

3.6 V

1.2 mm

7.62 mm

Not Qualified

4194304 bit

3 V

CAS BEFORE RAS/SELF REFRESH

17.14 mm

60 ns

TM248NBK36B-70

Texas Instruments

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1620 mA

2097152 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

2MX36

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.527 mm

Not Qualified

75497472 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.018 Amp

70 ns

TM512LBK36B-6

Texas Instruments

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

512

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

855 mA

524288 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

18

DRAMs

1.27 mm

70 Cel

3-STATE

512KX36

512K

0 Cel

SINGLE

1

R-XSMA-N72

5.25 V

25.4 mm

Not Qualified

18874368 bit

4.75 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.018 Amp

60 ns

TM4EP64CJN-60

Texas Instruments

EDO DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

SINGLE BANK PAGE BURST

NO

1

MOS

NO LEAD

SYNCHRONOUS

1440 mA

4194304 words

NO

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

4MX72

4M

0 Cel

GOLD

DUAL

1

R-PDMA-N168

3.6 V

25.53 mm

Not Qualified

301989888 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH

e4

.016 Amp

133.35 mm

60 ns

SMJ417100-60FNCM

Texas Instruments

FAST PAGE DRAM

MILITARY

24

SON

2048

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

16777216 words

5

1

SMALL OUTLINE

1.27 mm

125 Cel

16MX1

16M

-55 Cel

DUAL

1

R-CDSO-N24

5.5 V

3.18 mm

11.43 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

19.685 mm

60 ns

TMS426800-70DE

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

32

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

2097152 words

3.3

8

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

2MX8

2M

0 Cel

DUAL

1

R-PDSO-G32

3.6 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

3 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

20.95 mm

70 ns

TM248NBK36T-80

Texas Instruments

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1600 mA

2097152 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

2MX36

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.527 mm

Not Qualified

75497472 bit

4.5 V

RAS ONLY, CAS BEFORE RAS, HIDDEN REFRESH

.02 Amp

80 ns

TMS426169AP-70DGE

Texas Instruments

EDO DRAM

COMMERCIAL

44

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

100 mA

1048576 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

1

R-PDSO-G44

3.6 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.00015 Amp

20.95 mm

70 ns

TM893GBK32I-50

Texas Instruments

EDO DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

YES

1

CMOS

NO LEAD

SYNCHRONOUS

2080 mA

4194304 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX32

4M

0 Cel

QUAD

1

R-XQMA-N72

5.5 V

25.4 mm

Not Qualified

134217728 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.016 Amp

50 ns

TMS4108-20NL0

Texas Instruments

PAGE MODE DRAM

COMMERCIAL

16

DIP

64

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

8192 words

SEPARATE

1

IN-LINE

DIP16,.3

DRAMs

2.54 mm

70 Cel

3-STATE

8KX1

8K

0 Cel

DUAL

R-PDIP-T16

Not Qualified

8192 bit

NOT SPECIFIED

NOT SPECIFIED

200 ns

5962-9061701MUA

Texas Instruments

FAST PAGE DRAM

MILITARY

20

DFP

RECTANGULAR

UNSPECIFIED

FAST PAGE

YES

1

CMOS

MIL-STD-883

FLAT

ASYNCHRONOUS

262144 words

5

4

FLATPACK

1.27 mm

125 Cel

256KX4

256K

-55 Cel

TIN LEAD

DUAL

1

R-XDFP-F20

5.5 V

2.41 mm

9.652 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

17.02 mm

150 ns

TMS416409A-60DJ

Texas Instruments

EDO DRAM

COMMERCIAL

24

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

SYNCHRONOUS

90 mA

4194304 words

NO

COMMON

5

5

4

SMALL OUTLINE

SOJ24/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

DUAL

1

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

17.145 mm

60 ns

TM4256FC1-15L

Texas Instruments

DRAM MODULE

COMMERCIAL

22

256

RECTANGULAR

UNSPECIFIED

PAGE

NO

1

NMOS

THROUGH-HOLE

ASYNCHRONOUS

1048576 words

SEPARATE

5

1

MICROELECTRONIC ASSEMBLY

SIP22,.2

DRAMs

2.54 mm

70 Cel

3-STATE

1MX1

1M

0 Cel

SINGLE

1

R-XSMA-T22

5.5 V

Not Qualified

1048576 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

150 ns

SMJ416160-60HKDM

Texas Instruments

FAST PAGE DRAM

MILITARY

50

DFP

4096

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

YES

1

CMOS

FLAT

ASYNCHRONOUS

1048576 words

5

16

FLATPACK

.8 mm

125 Cel

3-STATE

1MX16

1M

-55 Cel

DUAL

1

R-CDFP-F50

5.5 V

3.55 mm

16.5 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

21 mm

60 ns

TM256GU9C-70

Texas Instruments

FAST PAGE DRAM MODULE

COMMERCIAL

30

SIMM

512

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

240 mA

262144 words

COMMON

5

5

9

MICROELECTRONIC ASSEMBLY

SIM30

DRAMs

2.54 mm

70 Cel

3-STATE

256KX9

256K

0 Cel

SINGLE

1

R-XSMA-N30

5.5 V

16.637 mm

Not Qualified

2359296 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.006 Amp

70 ns

SMJ4C1024-80FQM

Texas Instruments

FAST PAGE DRAM

MILITARY

20

SON

512

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

YES

1

CMOS

38535Q/M;38534H;883B

NO LEAD

SYNCHRONOUS

75 mA

1048576 words

SEPARATE

5

5

1

SMALL OUTLINE

SOLCC20/26,.35

DRAMs

1.27 mm

125 Cel

3-STATE

1MX1

1M

-55 Cel

DUAL

1

R-CDSO-N20

5.5 V

2.34 mm

8.89 mm

Not Qualified

1048576 bit

4.5 V

CAS BEFORE RAS REFRESH

NOT SPECIFIED

NOT SPECIFIED

.003 Amp

17.145 mm

80 ns

SMJ4C1024-15FQM

Texas Instruments

FAST PAGE DRAM

MILITARY

20

SON

512

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

YES

1

CMOS

38535Q/M;38534H;883B

NO LEAD

SYNCHRONOUS

55 mA

1048576 words

SEPARATE

5

5

1

SMALL OUTLINE

SOLCC20/26,.35

DRAMs

1.27 mm

125 Cel

3-STATE

1MX1

1M

-55 Cel

DUAL

1

R-CDSO-N20

5.5 V

2.34 mm

8.89 mm

Not Qualified

1048576 bit

4.5 V

CAS BEFORE RAS REFRESH

NOT SPECIFIED

NOT SPECIFIED

.003 Amp

17.145 mm

150 ns

5962-9062203MVA

Texas Instruments

FAST PAGE DRAM

MILITARY

16

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

ASYNCHRONOUS

4194304 words

5

1

IN-LINE

2.54 mm

125 Cel

4MX1

4M

-55 Cel

TIN LEAD

DUAL

1

R-CDIP-T16

5.5 V

3.93 mm

7.62 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

20.32 mm

80 ns

TMS4C1024-10DJL

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

1048576 words

5

1

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

1MX1

1M

0 Cel

DUAL

1

R-PDSO-J20

5.5 V

3.76 mm

7.57 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

17.145 mm

100 ns

TM4EP72BJN-60

Texas Instruments

EDO DRAM MODULE

COMMERCIAL

168

DIMM

2048

RECTANGULAR

PLASTIC/EPOXY

SINGLE BANK PAGE BURST

NO

1

MOS

NO LEAD

SYNCHRONOUS

1800 mA

4194304 words

NO

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

4MX72

4M

0 Cel

GOLD

DUAL

1

R-PDMA-N168

3.6 V

25.53 mm

Not Qualified

301989888 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH

e4

.018 Amp

133.35 mm

60 ns

TM024EAD9-80

Texas Instruments

FAST PAGE DRAM MODULE

COMMERCIAL

30

512

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1048576 words

5

9

MICROELECTRONIC ASSEMBLY

70 Cel

3-STATE

1MX9

1M

0 Cel

SINGLE

1

R-XSMA-N30

5.5 V

Not Qualified

9437184 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

80 ns

TM497BBK32I-70

Texas Instruments

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

800 mA

4194304 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX32

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.527 mm

Not Qualified

134217728 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.008 Amp

70 ns

TMS417409A-50DGA

Texas Instruments

EDO DRAM

COMMERCIAL

24

TSOP2

2048

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

130 mA

4194304 words

NO

COMMON

5

5

4

SMALL OUTLINE, THIN PROFILE

TSOP24/26,.36

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

DUAL

1

R-PDSO-G24

5.5 V

1.2 mm

7.62 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

17.14 mm

50 ns

TM8SR64JPU-12

Texas Instruments

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

16384

RECTANGULAR

UNSPECIFIED

FOUR BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1280 mA

8388608 words

YES

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

32

DRAMs

1.27 mm

70 Cel

3-STATE

8MX64

8M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

31.75 mm

83 MHz

Not Qualified

536870912 bit

3 V

AUTO/SELF REFRESH

.016 Amp

8 ns

TMS465409P-60DGC

Texas Instruments

EDO DRAM

COMMERCIAL

32

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

MOS

GULL WING

ASYNCHRONOUS

110 mA

16777216 words

YES

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

DRAMs

1.27 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

DUAL

1

R-PDSO-G32

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.00015 Amp

20.95 mm

60 ns

TM248CBJ32F-80L

Texas Instruments

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

2097152 words

5

32

MICROELECTRONIC ASSEMBLY

70 Cel

2MX32

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

67108864 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

80 ns

TMS427400DJ-60

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

4194304 words

3.3

4

SMALL OUTLINE

1.27 mm

70 Cel

4MX4

4M

0 Cel

DUAL

1

R-PDSO-J24

3.6 V

3.76 mm

7.62 mm

Not Qualified

16777216 bit

3 V

CAS BEFORE RAS

17.145 mm

60 ns

TM4257FL8-15

Texas Instruments

TMS418160A-50DGE

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

180 mA

1048576 words

NO

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

R-PDSO-G44

Not Qualified

16777216 bit

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

50 ns

TMS626812-10BDGE

Texas Instruments

SYNCHRONOUS DRAM

COMMERCIAL

44

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

120 mA

2097152 words

1,2,4,8

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

DUAL

R-PDSO-G44

100 MHz

Not Qualified

16777216 bit

NOT SPECIFIED

NOT SPECIFIED

.002 Amp

1,2,4,8

6 ns

SMJ416400-80FNC

Texas Instruments

FAST PAGE DRAM

MILITARY

24

SON

4096

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

4194304 words

5

4

SMALL OUTLINE

1.27 mm

125 Cel

3-STATE

4MX4

4M

-55 Cel

DUAL

1

R-CDSO-N24

5.5 V

3.18 mm

11.43 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

19.685 mm

80 ns

SMJ4416-20JDS

Texas Instruments

PAGE MODE DRAM

OTHER

18

DIP

256

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

PAGE

NO

1

NMOS

38535Q/M;38534H;883B

THROUGH-HOLE

ASYNCHRONOUS

16384 words

COMMON

5

5

4

IN-LINE

DIP18,.3

DRAMs

2.54 mm

100 Cel

3-STATE

16KX4

16K

-55 Cel

DUAL

1

R-CDIP-T18

5.5 V

5.08 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

RAS ONLY REFRESH

NOT SPECIFIED

NOT SPECIFIED

22.606 mm

200 ns

TMS626812-12DGER

Texas Instruments

SYNCHRONOUS DRAM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

DUAL BANK PAGE BURST

YES

1

MOS

GULL WING

SYNCHRONOUS

2097152 words

YES

3.3

8

SMALL OUTLINE, THIN PROFILE

.8 mm

70 Cel

2MX8

2M

0 Cel

DUAL

1

R-PDSO-G44

3.6 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

3 V

AUTO/SELF REFRESH

18.41 mm

9 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.