Texas Instruments DRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

5962-9062203MXX

Texas Instruments

FAST PAGE DRAM

MILITARY

20

DFP

RECTANGULAR

UNSPECIFIED

FAST PAGE

YES

1

CMOS

MIL-STD-883

FLAT

ASYNCHRONOUS

4194304 words

5

1

FLATPACK

1.27 mm

125 Cel

4MX1

4M

-55 Cel

DUAL

1

R-XDFP-F20

5.5 V

2.54 mm

12.45 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

17.78 mm

80 ns

TMX4C1029-15DJ

Texas Instruments

NIBBLE MODE DRAM

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

NIBBLE

YES

1

CMOS

J BEND

ASYNCHRONOUS

1048576 words

5

1

SMALL OUTLINE

1.27 mm

3-STATE

1MX1

1M

DUAL

1

R-PDSO-J20

5.5 V

3.76 mm

7.57 mm

Not Qualified

1048576 bit

4.5 V

17.145 mm

150 ns

TMS4060NL

Texas Instruments

COMMERCIAL

22

DIP

64

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

60 mA

4096 words

SEPARATE

1

IN-LINE

DIP22,.4

Other Memory ICs

2.54 mm

70 Cel

3-STATE

4KX1

4K

0 Cel

DUAL

R-PDIP-T22

Not Qualified

4096 bit

NOT SPECIFIED

NOT SPECIFIED

300 ns

TM8SK64JPU-10

Texas Instruments

SYNCHRONOUS DRAM MODULE

COMMERCIAL

144

DIMM

4096

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

195 mA

8388608 words

YES

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM144,32

DRAMs

.8 mm

70 Cel

3-STATE

8MX64

8M

0 Cel

DUAL

1

R-XDMA-N144

3.6 V

28.702 mm

100 MHz

Not Qualified

536870912 bit

3 V

AUTO/SELF REFRESH

.002 Amp

8 ns

SMJ44C251B-12HJM

Texas Instruments

VIDEO DRAM

MILITARY

28

SOJ

512

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

YES

1

CMOS

38535Q/M;38534H;883B

J BEND

ASYNCHRONOUS

100 mA

262144 words

5

5

4

SMALL OUTLINE

SOJ28,.4

Other Memory ICs

1.27 mm

125 Cel

3-STATE

256KX4

256K

-55 Cel

DUAL

2

R-CDSO-J28

5.5 V

4.52 mm

10.541 mm

Not Qualified

1048576 bit

4.5 V

CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.015 Amp

18.542 mm

120 ns

5962-9061703MRX

Texas Instruments

FAST PAGE DRAM

MILITARY

20

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

ASYNCHRONOUS

262144 words

5

4

IN-LINE

2.54 mm

125 Cel

256KX4

256K

-55 Cel

TIN LEAD

DUAL

1

R-CDIP-T20

5.5 V

3.93 mm

7.62 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

25.4 mm

100 ns

TMX4C1028-10N

Texas Instruments

TM4100EAD9-70

Texas Instruments

FAST PAGE DRAM MODULE

COMMERCIAL

30

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

810 mA

4194304 words

YES

COMMON

5

5

9

MICROELECTRONIC ASSEMBLY

SIM30

DRAMs

2.54 mm

70 Cel

3-STATE

4MX9

4M

0 Cel

SINGLE

1

R-XSMA-N30

5.5 V

22.987 mm

Not Qualified

37748736 bit

4.5 V

AUTO/SELF REFRESH

.009 Amp

70 ns

SMJ44400-80HMM

Texas Instruments

FAST PAGE DRAM

MILITARY

20

SON

1024

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

YES

1

CMOS

38535Q/M;38534H;883B

NO LEAD

ASYNCHRONOUS

85 mA

1048576 words

NO

COMMON

5

5

4

SMALL OUTLINE

SOLCC20/26,.4

DRAMs

1.27 mm

125 Cel

3-STATE

1MX4

1M

-55 Cel

DUAL

1

R-CDSO-N20

5.5 V

2.337 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.004 Amp

17.78 mm

80 ns

TM248GBK32S-80

Texas Instruments

EDO DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

MOS

NO LEAD

ASYNCHRONOUS

1280 mA

2097152 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

2MX32

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.4 mm

Not Qualified

67108864 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.016 Amp

80 ns

TMS55170-70DGH

Texas Instruments

VIDEO DRAM

COMMERCIAL

64

SSOP

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

5

16

SMALL OUTLINE, SHRINK PITCH

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

5.5 V

2.38 mm

12.04 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT

26.295 mm

70 ns

TM497MBK36A-80

Texas Instruments

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1040 mA

4194304 words

NO

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX36

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.527 mm

Not Qualified

150994944 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.012 Amp

80 ns

TMX44C256-10N

Texas Instruments

FAST PAGE DRAM

20

DIP

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

262144 words

5

4

IN-LINE

2.54 mm

3-STATE

256KX4

256K

DUAL

1

R-PDIP-T20

5.5 V

5.08 mm

7.62 mm

Not Qualified

1048576 bit

4.5 V

24.325 mm

100 ns

TMS44C256-15DJL

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

262144 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

256KX4

256K

0 Cel

DUAL

1

R-PDSO-J20

5.5 V

3.76 mm

7.57 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

17.145 mm

150 ns

TM4256GP9-10L

Texas Instruments

PAGE MODE DRAM

COMMERCIAL

30

SIMM

256

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

NO LEAD

262144 words

COMMON

5

5

9

MICROELECTRONIC ASSEMBLY

SIM30

DRAMs

2.54 mm

70 Cel

3-STATE

256KX9

256K

0 Cel

SINGLE

R-PSMA-N30

11.43 mm

Not Qualified

2359296 bit

100 ns

5962-8949703MZX

Texas Instruments

VIDEO DRAM

MILITARY

28

QCCN

RECTANGULAR

UNSPECIFIED

FAST PAGE

YES

1

CMOS

MIL-STD-883

NO LEAD

ASYNCHRONOUS

110 mA

262144 words

5

5

4

CHIP CARRIER

SOLCC28,.4

Other Memory ICs

1.27 mm

125 Cel

256KX4

256K

-55 Cel

QUAD

2

R-XQCC-N28

5.5 V

Not Qualified

1048576 bit

4.5 V

CAS BEFORE RAS/HIDDEN REFRESH

.015 Amp

120 ns

SMJ55166-80GBM

Texas Instruments

VIDEO DRAM

MILITARY

68

PGA

512

SQUARE

CERAMIC, METAL-SEALED COFIRED

FAST PAGE WITH EDO

NO

1

CMOS

38535Q/M;38534H;883B

PIN/PEG

ASYNCHRONOUS

200 mA

262144 words

5

5

16

GRID ARRAY

PGA68,9X9

Other Memory ICs

2.54 mm

125 Cel

3-STATE

256KX16

256K

-55 Cel

PERPENDICULAR

2

S-CPGA-P68

5.5 V

24.38 mm

Not Qualified

4194304 bit

4.5 V

CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.012 Amp

24.38 mm

80 ns

TMS44165L-80DZ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

40

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

105 mA

262144 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

R-PDSO-J40

Not Qualified

4194304 bit

NOT SPECIFIED

NOT SPECIFIED

.0002 Amp

80 ns

TM8TT64JPN-8A

Texas Instruments

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

RECTANGULAR

UNSPECIFIED

FOUR BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

8388608 words

YES

3.3

64

MICROELECTRONIC ASSEMBLY

70 Cel

8MX64

8M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

Not Qualified

536870912 bit

3 V

AUTO/SELF REFRESH

6 ns

TM2SR72EPH-10BU

Texas Instruments

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2097152 words

3.3

72

MICROELECTRONIC ASSEMBLY

70 Cel

2MX72

2M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

Not Qualified

150994944 bit

3 V

7 ns

TMS44800S-80DGC

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

28

TSOP2

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

100 mA

524288 words

YES

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSOP28,.46

DRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

DUAL

1

R-PDSO-G28

5.5 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.0002 Amp

18.41 mm

80 ns

TMS426169P-60DGE

Texas Instruments

EDO DRAM

COMMERCIAL

44

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

90 mA

1048576 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

1

R-PDSO-G44

3.6 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.0002 Amp

20.95 mm

60 ns

TMS626412A-12DGE

Texas Instruments

SYNCHRONOUS DRAM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

DUAL BANK PAGE BURST

YES

1

MOS

GULL WING

SYNCHRONOUS

4194304 words

YES

3.3

4

SMALL OUTLINE, THIN PROFILE

.8 mm

70 Cel

4MX4

4M

0 Cel

DUAL

1

R-PDSO-G44

3.6 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

3 V

AUTO/SELF REFRESH

18.41 mm

8 ns

TM024GAD8-70

Texas Instruments

FAST PAGE DRAM MODULE

COMMERCIAL

30

512

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1048576 words

5

8

MICROELECTRONIC ASSEMBLY

70 Cel

3-STATE

1MX8

1M

0 Cel

SINGLE

1

R-XSMA-N30

5.5 V

Not Qualified

8388608 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

70 ns

SMJ4164-15FGM

Texas Instruments

PAGE MODE DRAM

MILITARY

18

QCCN

256

RECTANGULAR

CERAMIC

YES

MOS

38535Q/M;38534H;883B

NO LEAD

65536 words

SEPARATE

5

5

1

CHIP CARRIER

LCC18,.3X.43

DRAMs

1.27 mm

125 Cel

3-STATE

64KX1

64K

-55 Cel

QUAD

R-XQCC-N18

Not Qualified

65536 bit

NOT SPECIFIED

NOT SPECIFIED

150 ns

TMS427800-80DE

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

32

TSOP2

2048

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

2097152 words

3.3

8

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

2MX8

2M

0 Cel

DUAL

1

R-PDSO-G32

3.6 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

3 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

20.95 mm

80 ns

TMS44100P-70SD

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

20

ZIP

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

4194304 words

YES

5

1

IN-LINE

1.27 mm

70 Cel

4MX1

4M

0 Cel

ZIG-ZAG

1

R-PZIP-T20

5.5 V

10.16 mm

2.8 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH

70 ns

CMS405-7

Texas Instruments

DRAM CARD

COMMERCIAL

60

1024

UNSPECIFIED

UNSPECIFIED

FAST PAGE

NO

1

CMOS

UNSPECIFIED

ASYNCHRONOUS

2097152 words

5

18

MICROELECTRONIC ASSEMBLY

55 Cel

2MX18

2M

0 Cel

UNSPECIFIED

1

X-XXMA-X60

5.25 V

Not Qualified

37748736 bit

4.75 V

70 ns

TMS416160A-70DGC

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

44

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

80 mA

1048576 words

NO

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

R-PDSO-G44

Not Qualified

16777216 bit

.001 Amp

70 ns

TMX44C259-15N

Texas Instruments

NIBBLE MODE DRAM

20

DIP

512

RECTANGULAR

PLASTIC/EPOXY

NIBBLE

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

262144 words

5

4

IN-LINE

2.54 mm

3-STATE

256KX4

256K

DUAL

1

R-PDIP-T20

5.5 V

5.08 mm

7.62 mm

Not Qualified

1048576 bit

4.5 V

24.325 mm

150 ns

SMJ44C256-80JDM

Texas Instruments

FAST PAGE DRAM

MILITARY

20

DIP

512

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

NO

1

CMOS

MIL-PRF-38535

THROUGH-HOLE

SYNCHRONOUS

80 mA

262144 words

COMMON

5

5

4

IN-LINE

DIP20,.3

DRAMs

2.54 mm

125 Cel

3-STATE

256KX4

256K

-55 Cel

DUAL

1

R-CDIP-T20

5.5 V

4.45 mm

7.62 mm

Not Qualified

1048576 bit

4.5 V

CAS BEFORE RAS REFRESH

NOT SPECIFIED

NOT SPECIFIED

.003 Amp

80 ns

TMS55161-60DGH

Texas Instruments

VIDEO DRAM

COMMERCIAL

64

SSOP

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

225 mA

262144 words

5

5

16

SMALL OUTLINE, SHRINK PITCH

SOP64,.54,32

Other Memory ICs

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

5.5 V

2.38 mm

12.04 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT

NOT SPECIFIED

NOT SPECIFIED

.005 Amp

26.295 mm

60 ns

TMS416100-80DGB

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

TSOP2-R

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

16777216 words

5

1

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

16MX1

16M

0 Cel

DUAL

1

R-PDSO-G24

5.5 V

1.2 mm

7.62 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY; CAS BEFORE RAS REFRESH

17.14 mm

80 ns

TM497FBK32H-50

Texas Instruments

EDO DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

YES

1

CMOS

NO LEAD

SYNCHRONOUS

1040 mA

4194304 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX32

4M

0 Cel

QUAD

1

R-XQMA-N72

5.5 V

25.4 mm

Not Qualified

134217728 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.008 Amp

50 ns

SMJ417400-60FNCM

Texas Instruments

FAST PAGE DRAM

MILITARY

24

SON

2048

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

4194304 words

5

4

SMALL OUTLINE

1.27 mm

125 Cel

4MX4

4M

-55 Cel

DUAL

1

R-CDSO-N24

5.5 V

3.18 mm

11.43 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

19.685 mm

60 ns

TMS427400P-10DGA

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

TSOP2

2048

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

4194304 words

YES

3.3

4

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

4MX4

4M

0 Cel

DUAL

1

R-PDSO-G24

3.6 V

1.2 mm

7.62 mm

Not Qualified

16777216 bit

3 V

RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH

17.14 mm

100 ns

TM124BBK32F-80

Texas Instruments

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

140 mA

1048576 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX32

1M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.527 mm

Not Qualified

33554432 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.002 Amp

80 ns

TM124MBK36A-8

Texas Instruments

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

900 mA

1048576 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

18

DRAMs

1.27 mm

70 Cel

3-STATE

1MX36

1M

0 Cel

SINGLE

1

R-XSMA-N72

5.25 V

25.5778 mm

Not Qualified

37748736 bit

4.75 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.012 Amp

80 ns

TMS427400P-10DJ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

4194304 words

YES

3.3

4

SMALL OUTLINE

1.27 mm

70 Cel

4MX4

4M

0 Cel

DUAL

1

R-PDSO-J24

3.6 V

3.76 mm

7.57 mm

Not Qualified

16777216 bit

3 V

RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH

17.145 mm

100 ns

TMS416800-80DZ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

28

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

2097152 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

DUAL

1

R-PDSO-J28

5.5 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

18.415 mm

80 ns

TMS428160A-60DZ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

42

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

150 mA

1048576 words

NO

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

R-PDSO-J42

Not Qualified

16777216 bit

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

60 ns

TMS416100-60DGC

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

16777216 words

5

1

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

16MX1

16M

0 Cel

DUAL

1

R-PDSO-G24

5.5 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

18.41 mm

60 ns

TMS4C1027-10DJ

Texas Instruments

STATIC COLUMN DRAM

COMMERCIAL

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

STATIC COLUMN

YES

1

CMOS

J BEND

ASYNCHRONOUS

65 mA

1048576 words

SEPARATE

5

5

1

SMALL OUTLINE

SOJ20/26,.34

SRAMs

1.27 mm

70 Cel

3-STATE

1MX1

1M

0 Cel

DUAL

1

R-PDSO-J20

5.5 V

3.76 mm

7.57 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.002 Amp

17.145 mm

100 ns

TMS428169AP-70DGE

Texas Instruments

EDO DRAM

COMMERCIAL

44

TSOP2

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

140 mA

1048576 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

1

R-PDSO-G44

3.6 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.00015 Amp

20.95 mm

70 ns

SMJ44C256-10HLM

Texas Instruments

FAST PAGE DRAM

MILITARY

20

SON

512

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

YES

1

CMOS

MIL-PRF-38535

NO LEAD

SYNCHRONOUS

70 mA

262144 words

COMMON

5

5

4

SMALL OUTLINE

SOLCC20/26,.35

DRAMs

1.27 mm

125 Cel

3-STATE

256KX4

256K

-55 Cel

DUAL

1

R-CDSO-N20

5.5 V

2.03 mm

8.89 mm

Not Qualified

1048576 bit

4.5 V

CAS BEFORE RAS REFRESH

NOT SPECIFIED

NOT SPECIFIED

.003 Amp

17.145 mm

100 ns

TM248CBK32U-60

Texas Instruments

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

360 mA

2097152 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

2MX32

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.4 mm

Not Qualified

67108864 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.004 Amp

60 ns

TM4EP72CJN-70

Texas Instruments

EDO DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

SINGLE BANK PAGE BURST

NO

1

MOS

NO LEAD

SYNCHRONOUS

1440 mA

4194304 words

NO

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

4MX72

4M

0 Cel

GOLD

DUAL

1

R-PDMA-N168

3.6 V

25.53 mm

Not Qualified

301989888 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH

e4

.018 Amp

133.35 mm

70 ns

TMX44C257-12N

Texas Instruments

STATIC COLUMN DRAM

20

DIP

512

RECTANGULAR

PLASTIC/EPOXY

STATIC COLUMN

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

262144 words

5

4

IN-LINE

2.54 mm

3-STATE

256KX4

256K

DUAL

1

R-PDIP-T20

5.5 V

5.08 mm

7.62 mm

Not Qualified

1048576 bit

4.5 V

24.325 mm

120 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.