DIP EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
CAT25C03LE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	256 words	5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel	256X8	256	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	5 MHz	7.62 mm	Not Qualified	5 ms	SPI	2048 bit	2.5 V			e3				9.59 mm
CAT25010LI-GD	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words	5		2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel	128X8	128	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified	5 ms	SPI	1024 bit	2.5 V			e4		260	.000002 Amp	9.27 mm
CAT24WC04PAREV-F	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	512 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	105 Cel	512X8	512	-40 Cel			1010DDMR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit							.000001 Amp
CAT25C08LA-1.8G	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		1024 words	5			8	IN-LINE				2.54 mm	105 Cel	1KX8	1K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)			DUAL		R-PDIP-T8		5.5 V	4.57 mm		1 MHz	7.62 mm	Not Qualified	10 ms	SPI	8192 bit	1.8 V			e4	40	260		9.59 mm
CAT28C257LA-12	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	105 Cel	32KX8	32K	-40 Cel	NO	MATTE TIN			DUAL		R-PDIP-T28		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		262144 bit	4.5 V		128	e3			.00015 Amp	36.695 mm	120 ns	5	YES
CAT25C33LE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	4096 words	5		2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel	4KX8	4K	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	SPI	32768 bit	1.8 V			e3				9.59 mm
CAT24FC32ALI	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	4096 words	2.5		2/3.3	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel	4KX8	4K	-40 Cel		MATTE TIN	1010DDDR		DUAL	HARDWARE	R-PDIP-T8		3.6 V	4.57 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	32768 bit	1.8 V			e3			.0000009 Amp	9.59 mm
CAT24WC128PI	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	16384 words	5			8	IN-LINE	DIP8,.3		100	2.54 mm	85 Cel	16KX8	16K	-40 Cel			1010XXXR		DUAL	HARDWARE	R-PDIP-T8		6 V	4.57 mm	100000 Write/Erase Cycles	.4 MHz	7.62 mm		10 ms	I2C	131072 bit	2.5 V						.000001 Amp	9.59 mm		5
CAT24WC02LREV-E	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	256 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	256X8	256	0 Cel			1010DDDR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT28C257LA-90	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	105 Cel	32KX8	32K	-40 Cel		MATTE TIN			DUAL		R-PDIP-T28		5.5 V	5.08 mm			15.24 mm	Not Qualified	5 ms		262144 bit	4.5 V			e3				36.695 mm	90 ns	5
CAT28LV64P-25	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8 mA	8192 words	3.3	YES	3.3	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel	8KX8	8K	0 Cel	NO				DUAL		R-PDIP-T28	1	3.6 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		65536 bit	3 V		32				.0001 Amp	36.695 mm	250 ns	3	YES
CAT28C257PA-12T	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE			100	2.54 mm	105 Cel	32KX8	32K	-40 Cel		TIN LEAD			DUAL		R-PDIP-T28		5.5 V	6.35 mm			15.24 mm	Not Qualified	5 ms		262144 bit	4.5 V	100 YEAR DATA RETENTION		e0	30	240		37.4 mm	120 ns	5
CAT24WC02GL-1.8REV-C	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	256 words			2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	256X8	256	0 Cel			1010DDDR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT24WC66LA-C	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words	5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	105 Cel	8KX8	8K	-40 Cel		MATTE TIN	1010DDDR		DUAL	HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	65536 bit	4.5 V			e3			.000001 Amp	9.27 mm
CAT24FC256PI-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	4 mA	32768 words	3		2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel	32KX8	32K	-40 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDIP-T8		6 V	4.57 mm	100000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V			e0			.000001 Amp	9.36 mm
CAT28C256HPI-25	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	85 Cel	32KX8	32K	-40 Cel		TIN LEAD			DUAL		R-PDIP-T28		5.5 V	5.08 mm			15.24 mm	Not Qualified			262144 bit	4.5 V			e0				36.703 mm	250 ns	5
CAT28C257P-15T	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE			100	2.54 mm	70 Cel	32KX8	32K	0 Cel		TIN LEAD			DUAL		R-PDIP-T28		5.5 V	6.35 mm			15.24 mm	Not Qualified	5 ms		262144 bit	4.5 V	100 YEAR DATA RETENTION		e0	30	240		37.4 mm	150 ns	5
CAT24C01BLI-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words	3		2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel	128X8	128	-40 Cel		MATTE TIN			DUAL		R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	1024 bit	1.8 V			e3			.000001 Amp	9.59 mm
CAT28C256PI-15T	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	85 Cel	32KX8	32K	-40 Cel		TIN LEAD			DUAL		R-PDIP-T28		5.5 V	6.35 mm			15.24 mm	Not Qualified	5 ms		262144 bit	4.5 V			e0				37.4 mm	150 ns	5
CAT24WC01P-1.8	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	128 words			2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	128X8	128	0 Cel			1010DDDR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT28C65BPA-15	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs	100	2.54 mm	105 Cel	8KX8	8K	-40 Cel	NO			YES	DUAL		R-PDIP-T28	1	5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		65536 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS	32				.0001 Amp	36.695 mm	150 ns	5	YES
CAT25020LA	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5			8	IN-LINE				2.54 mm	125 Cel	256X8	256	-40 Cel		MATTE TIN			DUAL		R-PDIP-T8		5.5 V	4.57 mm		5 MHz	7.62 mm	Not Qualified	5 ms	SPI	2048 bit	1.8 V			e3				9.59 mm
CAT25C11GL-1.8	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	2.5			8	IN-LINE				2.54 mm	70 Cel	128X8	128	0 Cel		NICKEL PALLADIUM GOLD			DUAL		R-PDIP-T8		6 V	4.57 mm		1 MHz	7.62 mm	Not Qualified	10 ms	SPI	1024 bit	1.8 V			e4				9.59 mm
CAT25C64LE-G	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		8192 words	5			8	IN-LINE				2.54 mm	125 Cel	8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		R-PDIP-T8		5.5 V	5.334 mm		3 MHz	7.62 mm	Not Qualified	10 ms	SPI	65536 bit	2.5 V			e4				9.271 mm
CAT28C513HPA-15	Onsemi	EEPROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words	5			8	IN-LINE			100	2.54 mm	105 Cel	64KX8	64K	-40 Cel		TIN LEAD			DUAL		R-PDIP-T32		5.5 V	5.08 mm			15.24 mm	Not Qualified			524288 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0				42.037 mm	150 ns	5
CAT24WC128LI	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	16384 words	5			8	IN-LINE	DIP8,.3		100	2.54 mm	85 Cel	16KX8	16K	-40 Cel			1010XXXR		DUAL	HARDWARE	R-PDIP-T8		6 V	4.57 mm	100000 Write/Erase Cycles	.4 MHz	7.62 mm		10 ms	I2C	131072 bit	2.5 V						.000001 Amp	9.59 mm		5
CAT28LV256PA-25	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	105 Cel	32KX8	32K	-40 Cel	NO				DUAL		R-PDIP-T28	1	3.6 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	3 V		64				.00015 Amp	36.695 mm	250 ns	3	YES
CAT25040LI-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words	5			8	IN-LINE				2.54 mm	85 Cel	512X8	512	-40 Cel		MATTE TIN			DUAL		R-PDIP-T8		6 V	4.57 mm		1 MHz	7.62 mm	Not Qualified	5 ms	SPI	4096 bit	1.8 V			e3				9.36 mm
CAT24C01BL-1.8	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words	3		2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	128X8	128	0 Cel		MATTE TIN			DUAL		R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	1024 bit	1.8 V			e3			.000001 Amp	9.59 mm
CAT24WC04LAREV-F	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	512 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	105 Cel	512X8	512	-40 Cel			1010DDMR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit							.000001 Amp
CAT24C32LE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		4096 words	5			8	IN-LINE			100	2.54 mm	125 Cel	4KX8	4K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		R-PDIP-T8		5.5 V	5.33 mm		1 MHz	7.62 mm	Not Qualified	5 ms	I2C	32768 bit	1.8 V	100 YEAR DATA RETENTION		e4				9.27 mm
CAT25C08LA	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	1024 words	5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	105 Cel	1KX8	1K	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	4.57 mm	1000000 Write/Erase Cycles	5 MHz	7.62 mm	Not Qualified	5 ms	SPI	8192 bit	2.5 V			e3			.00001 Amp	9.59 mm
CAT28C257HPA-15	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE			100	2.54 mm	105 Cel	32KX8	32K	-40 Cel		TIN LEAD			DUAL		R-PDIP-T28		5.5 V	5.08 mm			15.24 mm	Not Qualified	5 ms		262144 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0				36.703 mm	150 ns	5
CAT24WC02PE-1.8REV-F	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	256 words			2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel	256X8	256	-40 Cel			1010DDDR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT25C64L-1.8	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		8192 words	5			8	IN-LINE					70 Cel	8KX8	8K	0 Cel					DUAL		R-PDIP-T8		6 V			1 MHz			10 ms	SPI	65536 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED
CAT28LV65PA-35	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	3.3			8	IN-LINE			100	2.54 mm	105 Cel	8KX8	8K	-40 Cel		TIN LEAD			DUAL		R-PDIP-T28		3.6 V	5.08 mm			15.24 mm	Not Qualified			65536 bit	3 V	100000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e0				36.703 mm	350 ns	3
CAT25C16LI-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	2048 words	5		2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel	2KX8	2K	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	4.57 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	SPI	16384 bit	1.8 V			e3			.000001 Amp	9.59 mm
CAT24WC02GLIREV-F	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	256 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel	256X8	256	-40 Cel			1010DDDR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT24WC03L	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words	3		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	256X8	256	0 Cel		MATTE TIN	1010DDDR		DUAL	HARDWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			e3			.0000009 Amp	9.59 mm
CAT24WC256P	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	32768 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	32KX8	32K	0 Cel			10100DDR		DUAL	HARDWARE	R-PDIP-T8				100000 Write/Erase Cycles			Not Qualified		I2C	262144 bit							.000001 Amp
CAT25C11LA	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	128 words	5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	105 Cel	128X8	128	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	5 MHz	7.62 mm	Not Qualified	5 ms	SPI	1024 bit	2.5 V			e3			.00001 Amp	9.59 mm
CAT24WC128PA-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	16384 words	5			8	IN-LINE	DIP8,.3		100	2.54 mm	105 Cel	16KX8	16K	-40 Cel			1010XXXR		DUAL	HARDWARE	R-PDIP-T8		6 V	4.57 mm	100000 Write/Erase Cycles	.1 MHz	7.62 mm		10 ms	I2C	131072 bit	1.8 V						.00001 Amp	9.59 mm		5
CAT24WC16PA	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	2048 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	105 Cel	2KX8	2K	-40 Cel			1010MMMR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit							.000001 Amp
CAT25040L-1.8REV-C	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words	5			8	IN-LINE					70 Cel	512X8	512	0 Cel		MATTE TIN			DUAL		R-PDIP-T8		5.5 V			1 MHz		Not Qualified	5 ms	SPI	4096 bit	1.8 V			e3
CAT24WC05PI	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	512 words	3		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel	512X8	512	-40 Cel		TIN LEAD	1010DDMR		DUAL	HARDWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	4096 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION; SELF TIMED WRITE		e0			.0000009 Amp	9.59 mm
CAT28LV256PI-20T	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	3.3			8	IN-LINE				2.54 mm	85 Cel	32KX8	32K	-40 Cel		TIN LEAD			DUAL		R-PDIP-T28		3.6 V	5.08 mm			15.24 mm	Not Qualified	10 ms		262144 bit	3 V			e0				36.695 mm	200 ns	3
CAT25C65LI	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	8192 words	5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel	8KX8	8K	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	3 MHz	7.62 mm	Not Qualified	10 ms	SPI	65536 bit	2.5 V			e3			.000001 Amp	9.59 mm
CAT24WC33L-1.8	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	4096 words	3		2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	4KX8	4K	0 Cel		MATTE TIN	1010DDDR		DUAL	HARDWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	32768 bit	1.8 V			e3			.000001 Amp	9.35 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.