DIP EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
CAT28C256HP-12	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	70 Cel	32KX8	32K	0 Cel				DUAL			R-PDIP-T28		5.5 V	5.08 mm			15.24 mm	Not Qualified			262144 bit	4.5 V	100000 PROGRAM/ERASE CYCLES						36.703 mm	120 ns	5
CAT24WC66LI-G	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	8192 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel	8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	65536 bit				e4		260	.000001 Amp
CAT28C256FP-25	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	70 Cel	32KX8	32K	0 Cel		TIN LEAD		DUAL			R-PDIP-T28		5.5 V	5.08 mm			15.24 mm	Not Qualified			262144 bit	4.5 V			e0				36.703 mm	250 ns	5
CAT28LV65PI-35	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	3.3			8	IN-LINE				2.54 mm	85 Cel	8KX8	8K	-40 Cel		TIN LEAD		DUAL			R-PDIP-T28		3.6 V	5.08 mm			15.24 mm	Not Qualified			65536 bit	3 V			e0				36.703 mm	350 ns	3
CAT24WC16GLE-1.8REV-D	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	2048 words			2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel	2KX8	2K	-40 Cel			1010MMMR	DUAL		HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit							.000001 Amp
CAT25128LI-GT2	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		16384 words	5			8	IN-LINE			100	2.54 mm	85 Cel	16KX8	16K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL			R-PDIP-T8		5.5 V	5.33 mm		5 MHz	7.62 mm	Not Qualified	5 ms	SPI	131072 bit	1.8 V	100 YEAR DATA RETENTION		e4				9.27 mm
CAT24C128LE-G	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	16384 words	5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel	16KX8	16K	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V	100 YEAR DATA RETENTION		e4	NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	9.27 mm
CAT28C257LI-90	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	85 Cel	32KX8	32K	-40 Cel		MATTE TIN		DUAL			R-PDIP-T28		5.5 V	5.08 mm			15.24 mm	Not Qualified	5 ms		262144 bit	4.5 V			e3				36.695 mm	90 ns	5
CAT24WC02L-1.8REV-F	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	256 words			2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	256X8	256	0 Cel			1010DDDR	DUAL		HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT24WC32GLE	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	4096 words				8	IN-LINE	DIP8,.3		100	2.54 mm	125 Cel	4KX8	4K	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDIP-T8		5.5 V	4.57 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm		10 ms	I2C	32768 bit	2.5 V						.00001 Amp	9.59 mm
CAT24WC257L-3	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	32768 words	5			8	IN-LINE	DIP8,.3		100	2.54 mm	70 Cel	32KX8	32K	0 Cel			10100DDR	DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	4.57 mm	100000 Write/Erase Cycles	1 MHz	7.62 mm		10 ms	I2C	262144 bit	3 V						.000001 Amp	9.59 mm
CAT24WC16P-1.8	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	2048 words			2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	2KX8	2K	0 Cel			1010MMMR	DUAL		HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit							.000001 Amp
CAT25C17L	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	2048 words	5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	2KX8	2K	0 Cel		MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	5 MHz	7.62 mm	Not Qualified	5 ms	SPI	16384 bit	2.5 V			e3				9.59 mm
CAT24C64LI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		8192 words	5			8	IN-LINE			100	2.54 mm	85 Cel	8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL			R-PDIP-T8		5.5 V	5.33 mm		1 MHz	7.62 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V	100 YEAR DATA RETENTION		e4				9.27 mm
CAT24WC33PI	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	4096 words	3		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel	4KX8	4K	-40 Cel		TIN LEAD	1010DDDR	DUAL		HARDWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	32768 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEARS DATA RETENTION; SELF TIMED WRITE		e0			.000001 Amp	9.35 mm
CAT25020GLE-REV-C	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5			8	IN-LINE					125 Cel	256X8	256	-40 Cel		NICKEL PALLADIUM GOLD		DUAL			R-PDIP-T8		5.5 V			5 MHz		Not Qualified	5 ms	SPI	2048 bit	2.5 V			e4
CAT24WC16GLIREV-F	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	2048 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel	2KX8	2K	-40 Cel			1010MMMR	DUAL		HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit							.000001 Amp
CAT28C65BFPI-15	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	5			8	IN-LINE				2.54 mm	85 Cel	8KX8	8K	-40 Cel		TIN LEAD		DUAL			R-PDIP-T28		5.5 V	5.08 mm			15.24 mm	Not Qualified			65536 bit	4.5 V			e0				36.703 mm	150 ns	5
CAT25C11LE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	128 words	5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel	128X8	128	-40 Cel		MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	5 MHz	7.62 mm	Not Qualified	5 ms	SPI	1024 bit	2.5 V			e3			.00001 Amp	9.59 mm
CAT24C16LIG	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	2048 words	3.3			8	IN-LINE	DIP8,.3		100	2.54 mm	85 Cel	2KX8	2K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010MMMR	DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm		5 ms	I2C	16384 bit	1.7 V			e4			.000001 Amp	9.27 mm
CAT25020GL-1.8REV-C	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5			8	IN-LINE					70 Cel	256X8	256	0 Cel		NICKEL PALLADIUM GOLD		DUAL			R-PDIP-T8		5.5 V			1 MHz		Not Qualified	5 ms	SPI	2048 bit	1.8 V			e4
CAT28LV65HP-25	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	3.3			8	IN-LINE				2.54 mm	70 Cel	8KX8	8K	0 Cel		TIN LEAD		DUAL			R-PDIP-T28		3.6 V	5.08 mm			15.24 mm	Not Qualified			65536 bit	3 V			e0				36.703 mm	250 ns	3
CAT28LV256PE-30	Onsemi	EEPROM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	125 Cel	32KX8	32K	-40 Cel	NO			DUAL			R-PDIP-T28	1	3.6 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	3 V		64				.00015 Amp	36.695 mm	300 ns	3	YES
CAT24FC02PE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words	3		2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel	256X8	256	-40 Cel		TIN LEAD	1010DDDR	DUAL		HARDWARE	R-PDIP-T8		5.5 V	4.57 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e0			.00001 Amp	9.59 mm
CAT24WC164PA	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	2048 words	3		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	105 Cel	2KX8	2K	-40 Cel		TIN LEAD	1DDDMMMR	DUAL		HARDWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	2.5 V			e0			.00001 Amp	9.36 mm
CAT25040GLI-1.8REV-C	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words	5			8	IN-LINE					85 Cel	512X8	512	-40 Cel		NICKEL PALLADIUM GOLD		DUAL			R-PDIP-T8		5.5 V			1 MHz		Not Qualified	5 ms	SPI	4096 bit	1.8 V			e4
CAT24WC66LA-GT3	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words	5			8	IN-LINE			100	2.54 mm	105 Cel	8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL			R-PDIP-T8		5.5 V	5.33 mm		.4 MHz	7.62 mm		10 ms	I2C	65536 bit	2.5 V	100 YEAR DATA RETENTION		e4				9.27 mm
CAT24FC66PA	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	8192 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	105 Cel	8KX8	8K	-40 Cel		Tin/Lead (Sn/Pb)	1010DDDR	DUAL		HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	65536 bit				e0			.000001 Amp
CAT28LV256L-25	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel	32KX8	32K	0 Cel	NO	Tin (Sn)		DUAL			R-PDIP-T28		3.6 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	3 V		64	e3			.00015 Amp	36.695 mm	250 ns	3	YES
CAT24WC02LEREV-E	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	256 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel	256X8	256	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT24WC02PE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	256 words			2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel	256X8	256	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT24FC32LE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	4096 words	5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel	4KX8	4K	-40 Cel		MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDIP-T8		5.5 V	4.57 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V			e3			.00001 Amp	9.36 mm
CAT24WC03LI-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words	3		2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel	256X8	256	-40 Cel		MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V			e3			.0000009 Amp	9.59 mm
CAT24WC08LE-1.8REV-F	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	1024 words			2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel	1KX8	1K	-40 Cel			1010DMMR	DUAL		HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	8192 bit							.000001 Amp
CAT28C16ALA-90	Onsemi	EEPROM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	IN-LINE	DIP24,.6	EEPROMs	100	2.54 mm	105 Cel	2KX8	2K	-40 Cel	NO	TIN		DUAL			R-PDIP-T24		5.5 V	6.35 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		16384 bit	4.5 V			e3			.0001 Amp	31.875 mm	90 ns	5	YES
CAT28C256PI-12	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	85 Cel	32KX8	32K	-40 Cel	NO			DUAL			R-PDIP-T28	1	5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		262144 bit	4.5 V	10000 PROGRAM/ERASE CYCLES	64				.00015 Amp	36.695 mm	120 ns	5	YES
CAT24WC164PI	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	2048 words	3		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel	2KX8	2K	-40 Cel		TIN LEAD	1DDDMMMR	DUAL		HARDWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	2.5 V			e0			.000001 Amp	9.36 mm
CAT24WC03P-1.8	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words	3		2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	256X8	256	0 Cel		TIN LEAD	1010DDDR	DUAL		HARDWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION; SELF TIMED WRITE		e0			.0000009 Amp	9.59 mm
CAT25C64LA-1.8-G	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	8192 words	5		2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	105 Cel	8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	SPI	65536 bit	1.8 V			e4			.00001 Amp	9.271 mm
CAT25C64PE-G	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		8192 words	5			8	IN-LINE				2.54 mm	125 Cel	8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL			R-PDIP-T8		5.5 V	5.334 mm		3 MHz	7.62 mm	Not Qualified	10 ms	SPI	65536 bit	2.5 V			e4				9.271 mm
CAT25C65P	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	8192 words	5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	8KX8	8K	0 Cel		TIN LEAD		DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	3 MHz	7.62 mm	Not Qualified	10 ms	SPI	65536 bit	2.5 V			e0			.000001 Amp	9.59 mm
CAT28C64BHPI-12	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	5			8	IN-LINE				2.54 mm	85 Cel	8KX8	8K	-40 Cel		TIN LEAD		DUAL			R-PDIP-T28		5.5 V	5.08 mm			15.24 mm	Not Qualified			65536 bit	4.5 V			e0				36.703 mm	120 ns	5
CAT24WC03GL	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	256 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	256X8	256	0 Cel			1010DDDR	DUAL		HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.0000009 Amp
CAT25C128LA-G	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		10 mA	16384 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	105 Cel	16KX8	16K	-40 Cel				DUAL		HARDWARE/SOFTWARE	R-PDIP-T8				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.00001 Amp
CAT24WC16LI-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	2048 words			2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel	2KX8	2K	-40 Cel			1010MMMR	DUAL		HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit							.000001 Amp
CAT28C257LA-15T	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE			100	2.54 mm	105 Cel	32KX8	32K	-40 Cel		TIN		DUAL			R-PDIP-T28		5.5 V	6.35 mm			15.24 mm	Not Qualified	5 ms		262144 bit	4.5 V	100 YEAR DATA RETENTION		e3	NOT SPECIFIED	260		37.4 mm	150 ns	5
CAT28LV256PA-20T	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	3.3			8	IN-LINE				2.54 mm	105 Cel	32KX8	32K	-40 Cel		TIN LEAD		DUAL			R-PDIP-T28		3.6 V	5.08 mm			15.24 mm	Not Qualified	10 ms		262144 bit	3 V			e0				36.695 mm	200 ns	3
CAT24WC05GLI	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	512 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel	512X8	512	-40 Cel			1010DDMR	DUAL		HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit							.0000009 Amp

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.