DIP EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
CAT28LV65HPI-30	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	3.3			8	IN-LINE				2.54 mm	85 Cel	8KX8	8K	-40 Cel		TIN LEAD			DUAL		R-PDIP-T28		3.6 V	5.08 mm			15.24 mm	Not Qualified			65536 bit	3 V			e0				36.703 mm	300 ns	3
CAT28C256HPI-20	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	85 Cel	32KX8	32K	-40 Cel		TIN LEAD			DUAL		R-PDIP-T28		5.5 V	5.08 mm			15.24 mm	Not Qualified			262144 bit	4.5 V			e0				36.703 mm	200 ns	5
CAT25040P	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words	5			8	IN-LINE				2.54 mm	70 Cel	512X8	512	0 Cel		TIN LEAD			DUAL		R-PDIP-T8		6 V	4.57 mm		5 MHz	7.62 mm	Not Qualified	5 ms	SPI	4096 bit	2.5 V			e0				9.36 mm
CAT25010P-REV-C	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	5			8	IN-LINE					70 Cel	128X8	128	0 Cel		TIN LEAD			DUAL		R-PDIP-T8		5.5 V			5 MHz		Not Qualified	5 ms	SPI	1024 bit	2.5 V			e0
CAT24WC08GLA-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	1024 words			2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	105 Cel	1KX8	1K	-40 Cel			1010DMMR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	8192 bit							.000001 Amp
CAT24WC16LE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	2048 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel	2KX8	2K	-40 Cel			1010MMMR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit							.000001 Amp
CAT25040LE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words	5			8	IN-LINE				2.54 mm	125 Cel	512X8	512	-40 Cel		MATTE TIN			DUAL		R-PDIP-T8		6 V	4.57 mm		1 MHz	7.62 mm	Not Qualified	5 ms	SPI	4096 bit	1.8 V			e3				9.36 mm
CAT28LV256PI-30	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	85 Cel	32KX8	32K	-40 Cel	NO				DUAL		R-PDIP-T28	1	3.6 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	3 V		64				.00015 Amp	36.695 mm	300 ns	3	YES
CAT25C65PE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	8192 words	5		2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel	8KX8	8K	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	SPI	65536 bit	1.8 V			e0			.00001 Amp	9.59 mm
CAT28C513L-15	Onsemi	EEPROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words	5			8	IN-LINE			100	2.54 mm	70 Cel	64KX8	64K	0 Cel		MATTE TIN			DUAL		R-PDIP-T32		5.5 V	5.08 mm			15.24 mm	Not Qualified			524288 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e3				42.037 mm	150 ns	5
CAT24WC08LA-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	1024 words			2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	105 Cel	1KX8	1K	-40 Cel			1010DMMR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	8192 bit							.000001 Amp
CAT28LV256L-20T	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	3.3			8	IN-LINE				2.54 mm	70 Cel	32KX8	32K	0 Cel		MATTE TIN			DUAL		R-PDIP-T28		3.6 V	5.08 mm			15.24 mm	Not Qualified	10 ms		262144 bit	3 V			e3				36.695 mm	200 ns	3
CAT25C128LE-G	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		10 mA	16384 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel	16KX8	16K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDIP-T8				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.00001 Amp
CAT24WC02LIREV-C	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	256 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel	256X8	256	-40 Cel			1010DDDR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT24WC64LA-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words				8	IN-LINE	DIP8,.3		100	2.54 mm	105 Cel	8KX8	8K	-40 Cel			1010DDDR		DUAL	HARDWARE	R-PDIP-T8		5.5 V	4.57 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm		10 ms	I2C	65536 bit	1.8 V						.00001 Amp	9.59 mm
CAT28C65BPI-90	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	85 Cel	8KX8	8K	-40 Cel	NO			YES	DUAL		R-PDIP-T28	1	5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		65536 bit	4.5 V		32				.0001 Amp	36.695 mm	90 ns	5	YES
CAT25040PA-1.8REV-C	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words	5			8	IN-LINE					105 Cel	512X8	512	-40 Cel		TIN LEAD			DUAL		R-PDIP-T8		5.5 V			1 MHz		Not Qualified	5 ms	SPI	4096 bit	1.8 V			e0
CAT28LV256PA-30T	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	3.3			8	IN-LINE				2.54 mm	105 Cel	32KX8	32K	-40 Cel		TIN LEAD			DUAL		R-PDIP-T28		3.6 V	5.08 mm			15.24 mm	Not Qualified	10 ms		262144 bit	3 V			e0				36.695 mm	300 ns	3
CAT28LV64LA20	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8 mA	8192 words	3.3	YES	3.3	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	105 Cel	8KX8	8K	-40 Cel	NO				DUAL		R-PDIP-T28		3.6 V	6.35 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		65536 bit	3 V		32		NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	37.4 mm	200 ns	3	YES
CAT24WC01LEREV-F	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	128 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	128X8	128	0 Cel			1010DDDR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT25020LA-G	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5			8	IN-LINE				2.54 mm	125 Cel	256X8	256	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		R-PDIP-T8		5.5 V	4.57 mm		5 MHz	7.62 mm	Not Qualified	5 ms	SPI	2048 bit	1.8 V			e4				9.59 mm
CAT24WC08GL	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	1024 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	1KX8	1K	0 Cel			1010DMMR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	8192 bit							.000001 Amp
CAT28C65BL-20	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	5			8	IN-LINE				2.54 mm	70 Cel	8KX8	8K	0 Cel		MATTE TIN			DUAL		R-PDIP-T28		5.5 V	5.08 mm			15.24 mm	Not Qualified			65536 bit	4.5 V	AUTOMATIC WRITE; PAGE WRITE		e3				36.703 mm	200 ns	5
CAT25010PI	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	5			8	IN-LINE				2.54 mm	85 Cel	128X8	128	-40 Cel		TIN LEAD			DUAL		R-PDIP-T8		6 V	4.57 mm		5 MHz	7.62 mm	Not Qualified	5 ms	SPI	1024 bit	2.5 V			e0				9.36 mm
CAT24WC04LIREV-F	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	512 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel	512X8	512	-40 Cel			1010DDMR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit							.000001 Amp
CAT24WC01P-1.8REV-C	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	128 words			2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	128X8	128	0 Cel			1010DDDR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT24WC128LA	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	16384 words	5			8	IN-LINE	DIP8,.3		100	2.54 mm	105 Cel	16KX8	16K	-40 Cel			1010XXXR		DUAL	HARDWARE	R-PDIP-T8		6 V	4.57 mm	100000 Write/Erase Cycles	.4 MHz	7.62 mm		10 ms	I2C	131072 bit	2.5 V						.00001 Amp	9.59 mm		5
CAT24WC01GL-1.8REV-E	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	128 words			2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	128X8	128	0 Cel			1010DDDR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT24WC66LA-G	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words	3		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	105 Cel	8KX8	8K	-40 Cel			1010DDDR		DUAL	HARDWARE	R-PDIP-T8		5.5 V		1000000 Write/Erase Cycles		7.62 mm	Not Qualified	10 ms	I2C	65536 bit	1.8 V						.000001 Amp	9.27 mm
CAT24WC16GL	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	2048 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	2KX8	2K	0 Cel			1010MMMR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit							.000001 Amp
CAT24WC02LIREV-F	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	256 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel	256X8	256	-40 Cel			1010DDDR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT28C513HPI-12	Onsemi	EEPROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words	5			8	IN-LINE			100	2.54 mm	85 Cel	64KX8	64K	-40 Cel		TIN LEAD			DUAL		R-PDIP-T32		5.5 V	5.08 mm			15.24 mm	Not Qualified			524288 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0				42.037 mm	120 ns	5
CAT24WC128P-1.8	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	16384 words	5			8	IN-LINE	DIP8,.3		100	2.54 mm	70 Cel	16KX8	16K	0 Cel			1010XXXR		DUAL	HARDWARE	R-PDIP-T8		6 V	4.57 mm	100000 Write/Erase Cycles	.1 MHz	7.62 mm		10 ms	I2C	131072 bit	1.8 V						.000001 Amp	9.59 mm		5
CAT24WC129LI-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	16384 words	3		2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel	16KX8	16K	-40 Cel		MATTE TIN	1010XXXR		DUAL	HARDWARE	R-PDIP-T8		6 V	4.57 mm	100000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	131072 bit	1.8 V			e3			.000001 Amp	9.59 mm
CAT25C65PA	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	8192 words	5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	105 Cel	8KX8	8K	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	3 MHz	7.62 mm	Not Qualified	10 ms	SPI	65536 bit	2.5 V			e0			.00001 Amp	9.59 mm
CAT24FC65GLA	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	8192 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	105 Cel	8KX8	8K	-40 Cel			1010DDDR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	65536 bit							.000001 Amp
CAT24C256LI	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	1 mA	32768 words	3.3		2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel	32KX8	32K	-40 Cel		TIN	1010DDDR		DUAL	HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V			e3		260	.000001 Amp	9.27 mm
CAT24WC32GLA	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	4096 words				8	IN-LINE	DIP8,.3		100	2.54 mm	105 Cel	4KX8	4K	-40 Cel			1010DDDR		DUAL	HARDWARE	R-PDIP-T8		5.5 V	4.57 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm		10 ms	I2C	32768 bit	2.5 V						.00001 Amp	9.59 mm
CAT28C65BPI-12	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	85 Cel	8KX8	8K	-40 Cel	NO			YES	DUAL		R-PDIP-T28	1	5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		65536 bit	4.5 V		32				.0001 Amp	36.695 mm	120 ns	5	YES
CAT25C08LI	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	1024 words	5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel	1KX8	1K	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	4.57 mm	1000000 Write/Erase Cycles	5 MHz	7.62 mm	Not Qualified	5 ms	SPI	8192 bit	2.5 V			e3			.000001 Amp	9.59 mm
CAT24WC32GLI-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	4096 words				8	IN-LINE	DIP8,.3		100	2.54 mm	85 Cel	4KX8	4K	-40 Cel			1010DDDR		DUAL	HARDWARE	R-PDIP-T8		5.5 V	4.57 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm		10 ms	I2C	32768 bit	1.8 V						.000001 Amp	9.59 mm
CAT25C32GLI-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		4096 words	5			8	IN-LINE					85 Cel	4KX8	4K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		R-PDIP-T8		6 V			1 MHz			10 ms	SPI	32768 bit	1.8 V			e4
CAT28LV256LI-30T	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	3.3			8	IN-LINE				2.54 mm	85 Cel	32KX8	32K	-40 Cel		MATTE TIN			DUAL		R-PDIP-T28		3.6 V	5.08 mm			15.24 mm	Not Qualified	10 ms		262144 bit	3 V			e3				36.695 mm	300 ns	3
CAT24WC02L	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	256 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	256X8	256	0 Cel			1010DDDR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT28C65BL-15	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel	8KX8	8K	0 Cel	NO	MATTE TIN		YES	DUAL		R-PDIP-T28		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		65536 bit	4.5 V		32	e3			.0001 Amp	36.695 mm	150 ns	5	YES
CAT25C64PI	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		8192 words	5			8	IN-LINE					85 Cel	8KX8	8K	-40 Cel					DUAL		R-PDIP-T8		6 V			3 MHz			10 ms	SPI	65536 bit	2.5 V
CAT28C65BPI-20	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	5			8	IN-LINE				2.54 mm	85 Cel	8KX8	8K	-40 Cel		TIN LEAD			DUAL		R-PDIP-T28		5.5 V	5.08 mm			15.24 mm	Not Qualified			65536 bit	4.5 V	AUTOMATIC WRITE; PAGE WRITE		e0				36.703 mm	200 ns	5
CAT25010LET3	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		131072 words	5			8	IN-LINE				2.54 mm	125 Cel	128KX8	128K	-40 Cel		MATTE TIN			DUAL		R-PDIP-T8		5.5 V	5.33 mm		5 MHz	7.62 mm	Not Qualified	5 ms	SPI	1048576 bit	1.8 V			e3				9.27 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.