QCCJ EEPROM 1,527

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
XC18V02PC44C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		262144 words		3.3		8	CHIP CARRIER				1.27 mm	85 Cel		256KX8	256K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J44	3	3.6 V	4.572 mm			16.5862 mm	Not Qualified	2097152 bit	3 V		e0					16.5862 mm	20 ns
XC18V04PC44C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		524288 words		3.3		8	CHIP CARRIER				1.27 mm	85 Cel		512KX8	512K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J44	3	3.6 V	4.572 mm			16.5862 mm	Not Qualified	4194304 bit	3 V		e0					16.5862 mm	20 ns
XQ18V04CC44M	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE	40k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	50 mA	524288 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	10	1.27 mm	125 Cel		512KX8	512K	-55 Cel	TIN LEAD	QUAD	S-CQCC-J44		3.6 V	4.826 mm	2000 Write/Erase Cycles	20 MHz	16.51 mm	Not Qualified	4194304 bit	3 V		e0			NOR TYPE	.02 Amp	16.51 mm
XQR1701LCC44V	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE	50k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		1048576 words		3.3		1	CHIP CARRIER				1.27 mm	125 Cel		1MX1	1M	-55 Cel	TIN LEAD	QUAD	S-CQCC-J44		3.6 V	4.826 mm		15 MHz	16.51 mm	Not Qualified	1048576 bit	3 V		e0					16.51 mm
XC18V01PC20C0799	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		8	CHIP CARRIER				1.27 mm	85 Cel		128KX8	128K	-40 Cel		QUAD	S-PQCC-J20		3.6 V	4.572 mm			8.9662 mm	Not Qualified	1048576 bit	3 V							8.9662 mm	15 ns
XC18512PC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	30 mA	524288 words		3.3	2.5/3.3,3.3	1	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	10	1.27 mm	85 Cel		512KX1	512K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	3.6 V	4.57 mm	10000 Write/Erase Cycles	15 MHz	8.9662 mm	Not Qualified	524288 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	225	NOR TYPE	.0001 Amp	8.9662 mm	45 ns
XQ1704LCC44B	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	J BEND	SERIAL	SYNCHRONOUS		4194304 words		3.3		1	CHIP CARRIER				1.27 mm	125 Cel		4MX1	4M	-55 Cel	TIN LEAD	QUAD	S-CQCC-J44		3.6 V	4.826 mm			16.51 mm	Not Qualified	4194304 bit	3 V		e0					16.51 mm
XQ1704LCC44M	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	J BEND	SERIAL	SYNCHRONOUS		4194304 words		3.3		1	CHIP CARRIER				1.27 mm	125 Cel		4MX1	4M	-55 Cel	TIN LEAD	QUAD	S-CQCC-J44		3.6 V	4.826 mm			16.51 mm	Not Qualified	4194304 bit	3 V		e0					16.51 mm
XC18256PC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	30 mA	262144 words		3.3	2.5/3.3,3.3	1	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	10	1.27 mm	70 Cel		256KX1	256K	0 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	3.6 V	4.57 mm	10000 Write/Erase Cycles	15 MHz	8.9662 mm	Not Qualified	262144 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	225	NOR TYPE	.0001 Amp	8.9662 mm	45 ns
XC18V02PC44C0799	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		262144 words		3.3		8	CHIP CARRIER				1.27 mm	85 Cel		256KX8	256K	-40 Cel		QUAD	S-PQCC-J44		3.6 V	4.572 mm			16.5862 mm	Not Qualified	2097152 bit	3 V							16.5862 mm	20 ns
XQR17V16CC44V	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE	50k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	125 Cel	3-STATE	2MX8	2M	-55 Cel	TIN LEAD	QUAD	S-CQCC-J44		3.6 V	4.826 mm			16.51 mm	Not Qualified	16777216 bit	3 V		e0				.001 Amp	16.51 mm
XC18V128PC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		1	CHIP CARRIER				1.27 mm	85 Cel		128KX1	128K	-40 Cel		QUAD	S-PQCC-J20		3.6 V	4.572 mm			8.9662 mm	Not Qualified	131072 bit	3 V							8.9662 mm	20 ns
XQR1701LCCG44V	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE	50k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		1048576 words		3.3		1	CHIP CARRIER				1.27 mm	125 Cel		1MX1	1M	-55 Cel	MATTE TIN	QUAD	S-CQCC-J44		3.6 V	4.826 mm		15 MHz	16.51 mm	Not Qualified	1048576 bit	3 V		e3					16.51 mm
XQR1704LCC44M	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	J BEND	SERIAL	SYNCHRONOUS		4194304 words		3.3		1	CHIP CARRIER				1.27 mm	125 Cel		4MX1	4M	-55 Cel	TIN LEAD	QUAD	S-CQCC-J44		3.6 V	4.826 mm			16.51 mm	Not Qualified	4194304 bit	3 V		e0					16.51 mm
XC18V04PCG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	524288 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel	Matte Tin (Sn)	QUAD	S-PQCC-J44	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	20 MHz	16.5862 mm	Not Qualified	4194304 bit	3 V		e3	30	245	NOR TYPE	.01 Amp	16.5862 mm	20 ns
5962-9951401QYA	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE		CERAMIC, GLASS-SEALED	YES	1	CMOS	MIL-PRF-38535	J BEND	SERIAL	SYNCHRONOUS	10 mA	1048576 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	TIN LEAD	QUAD	S-GQCC-J44		3.6 V	4.826 mm		15 MHz	16.51 mm	Not Qualified	1048576 bit	3 V		e0				.0001 Amp	16.51 mm	45 ns	3
XC17256DPC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	262144 words	COMMON	5	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	5.5 V	4.572 mm		12 MHz	8.9662 mm	Not Qualified	262144 bit	4.5 V		e0	30	225		.00005 Amp	8.9662 mm
XC1765LPC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON	5	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	5.5 V	4.572 mm		2.5 MHz	8.9662 mm	Not Qualified	65536 bit	4.5 V		e0	30	225		.0015 Amp	8.9662 mm
XC17V08PCG44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		1048576 words		3.3		8	CHIP CARRIER				1.27 mm	85 Cel		1MX8	1M	-40 Cel	Matte Tin (Sn)	QUAD	S-PQCC-J44	3	3.6 V	4.57 mm			16.5862 mm	Not Qualified	8388608 bit	3 V		e3	30	245			16.5862 mm
XC1765ELPCG20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		65536 words		3.3		1	CHIP CARRIER				1.27 mm	85 Cel		64KX1	64K	-40 Cel	Matte Tin (Sn)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm			8.9662 mm	Not Qualified	65536 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	245			8.9662 mm
XC17V08PC44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	1048576 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J44	3	3.6 V	4.57 mm		20 MHz	16.5862 mm	Not Qualified	8388608 bit	3 V		e0	30	225		.001 Amp	16.5862 mm
XC17V02PC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	15 mA	2097152 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	2MX1	2M	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified	2097152 bit	3 V		e0	30	225		.001 Amp	8.9662 mm
XC1701-PCG20M	Xilinx	CONFIGURATION MEMORY	MILITARY	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		1048576 words		5		1	CHIP CARRIER				1.27 mm	125 Cel		1MX1	1M	-55 Cel	MATTE TIN	QUAD	S-PQCC-J20	3	5.5 V	4.57 mm			8.9662 mm	Not Qualified	1048576 bit	4.5 V		e3					8.9662 mm	45 ns
XC17128EPCG20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		131072 words		5		1	CHIP CARRIER				1.27 mm	85 Cel		128KX1	128K	-40 Cel	Matte Tin (Sn)	QUAD	S-PQCC-J20	3	5.5 V	4.572 mm			8.9662 mm	Not Qualified	131072 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	245			8.9662 mm
XC17V04PC44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J44	3	3.6 V	4.57 mm		15 MHz	16.5862 mm	Not Qualified	4194304 bit	3 V		e0	30	225		.001 Amp	16.5862 mm
XC17128-PC20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	5	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	128KX1	128K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	5.25 V	4.318 mm		10 MHz	8.9662 mm	Not Qualified	131072 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225		.0005 Amp	8.9662 mm
XC1702LPCG44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		2097152 words		3.3		1	CHIP CARRIER				1.27 mm	85 Cel		2MX1	2M	-40 Cel	Matte Tin (Sn)	QUAD	S-PQCC-J44	3	3.6 V	4.572 mm			16.5862 mm	Not Qualified	2097152 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	245			16.5862 mm
XC17256EPCG20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	262144 words	COMMON	5	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Matte Tin (Sn)	QUAD	S-PQCC-J20	3	5.25 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified	262144 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	245		.00005 Amp	8.9662 mm
XC17256ELPCG20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		262144 words		3.3		1	CHIP CARRIER				1.27 mm	85 Cel		256KX1	256K	-40 Cel	Matte Tin (Sn)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm			8.9662 mm	Not Qualified	262144 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	245			8.9662 mm
XC1701PCG20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		1048576 words		5		1	CHIP CARRIER				1.27 mm	70 Cel		1MX1	1M	0 Cel	MATTE TIN	QUAD	S-PQCC-J20	3	5.25 V	4.572 mm			8.9662 mm	Not Qualified	1048576 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	245			8.9662 mm
XC1765ELPC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm		2.5 MHz	8.9662 mm	Not Qualified	65536 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225		.00005 Amp	8.9662 mm
XC1701LPC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	1048576 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified	1048576 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225		.00005 Amp	8.9662 mm
XC1736A-PC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	36288 words	COMMON	5	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	36288X1	36288	0 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	5.25 V	4.318 mm		2.5 MHz	8.9662 mm	Not Qualified	36288 bit	4.75 V		e0	30	225		.0005 Amp	8.9662 mm		15
XC1736DPC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	36288 words	COMMON	5	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	36288X1	36288	0 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	5.25 V	4.572 mm		5 MHz	8.9662 mm	Not Qualified	36288 bit	4.75 V		e0	30	225		.0015 Amp	8.9662 mm
XC1718DPC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	18144 words	COMMON	5	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	18144X1	18144	0 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	5.25 V	4.572 mm		5 MHz	8.9662 mm	Not Qualified	18144 bit	4.75 V		e0	30	225		.0015 Amp	8.9662 mm
XC17V08PC44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	1048576 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J44	3	3.6 V	4.57 mm		20 MHz	16.5862 mm	Not Qualified	8388608 bit	3 V		e0	30	225		.001 Amp	16.5862 mm
XC1765ELPCG20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		65536 words		3.3		1	CHIP CARRIER				1.27 mm	70 Cel		64KX1	64K	0 Cel	Matte Tin (Sn)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm			8.9662 mm	Not Qualified	65536 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	245			8.9662 mm
XC17256ELPC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	5 mA	262144 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified	262144 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225		.00005 Amp	8.9662 mm
XC17128LPC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	5 mA	131072 words	COMMON	5	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	128KX1	128K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	5.5 V	4.572 mm		10 MHz	8.9662 mm	Not Qualified	131072 bit	4.5 V		e0	30	225		.00005 Amp	8.9662 mm
XC17V08PCG44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		1048576 words		3.3		8	CHIP CARRIER				1.27 mm	70 Cel		1MX8	1M	0 Cel	Matte Tin (Sn)	QUAD	S-PQCC-J44	3	3.6 V	4.57 mm			16.5862 mm	Not Qualified	8388608 bit	3 V		e3	30	245			16.5862 mm
XC17512LPCG20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		524288 words		3.3		1	CHIP CARRIER				1.27 mm	85 Cel		512KX1	512K	-40 Cel	Matte Tin (Sn)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm			8.9662 mm	Not Qualified	524288 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	245			8.9662 mm
XC1704LPC44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	4194304 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J44	3	3.6 V	4.572 mm		15 MHz	16.5862 mm	Not Qualified	4194304 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225		.00005 Amp	16.5862 mm
XC17256LPC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	5 mA	262144 words	COMMON	5	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	5.5 V	4.572 mm		10 MHz	8.9662 mm	Not Qualified	262144 bit	4.5 V		e0	30	225		.00005 Amp	8.9662 mm
XC17V02PCG20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		2097152 words		3.3		1	CHIP CARRIER				1.27 mm	70 Cel		2MX1	2M	0 Cel	Matte Tin (Sn)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm			8.9662 mm	Not Qualified	2097152 bit	3 V		e3	30	245			8.9662 mm
XC17256EPC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	262144 words	COMMON	5	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J20	3	5.5 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified	262144 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225		.00005 Amp	8.9662 mm
XC1736EPC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	36288 words	COMMON	5	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	36288X1	36288	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J20	3	5.5 V	4.572 mm		10 MHz	8.9662 mm	Not Qualified	36288 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225		.00005 Amp	8.9662 mm
XC17128EPC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	5	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	128KX1	128K	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J20	3	5.5 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified	131072 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225		.00005 Amp	8.9662 mm
XC17128EPCG20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	5	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	128KX1	128K	0 Cel	Matte Tin (Sn)	QUAD	S-PQCC-J20	3	5.25 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified	131072 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	245		.00005 Amp	8.9662 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.