QCCJ EEPROM 1,527

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
X28C512JZ-12T1	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	120 ns	5	YES
X28C512JMB-15	Renesas Electronics	EEPROM	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	38535Q/M;38534H;883B	J BEND	PARALLEL		50 mA	65536 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	125 Cel		64KX8	64K	-55 Cel	NO		QUAD	R-PQCC-J32				100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128				.0005 Amp		150 ns		YES
X28C512J-20	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL		50 mA	65536 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel		64KX8	64K	0 Cel	NO		QUAD	R-PQCC-J32				100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128				.0005 Amp		200 ns		YES
X28C512JMB-90	Renesas Electronics	EEPROM	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	38535Q/M;38534H;883B	J BEND	PARALLEL		50 mA	65536 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	125 Cel		64KX8	64K	-55 Cel	NO		QUAD	R-PQCC-J32				100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128				.0005 Amp		90 ns		YES
X28C512JZ-15	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	150 ns	5	YES
X28C513JZ-12	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	120 ns	5	YES
X28C512JM-12	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	125 Cel	3-STATE	64KX8	64K	-55 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	120 ns	5	YES
X28C512JM-90	Renesas Electronics	EEPROM	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL		50 mA	65536 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	125 Cel		64KX8	64K	-55 Cel	NO		QUAD	R-PQCC-J32				100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128				.0005 Amp		90 ns		YES
X28C513J-12T1	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	120 ns	5	YES
X28C513JI-15	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	150 ns	5	YES
X28C512JZ-15T1	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	150 ns	5	YES
X28C512JIZ-15T1	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	150 ns	5	YES
X28C512JIZ-15	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	150 ns	5	YES
X28C512JM-15	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	125 Cel	3-STATE	64KX8	64K	-55 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	150 ns	5	YES
X28C513JIZ-12	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	120 ns	5	YES
X28C512JMB-12	Renesas Electronics	EEPROM	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	38535Q/M;38534H;883B	J BEND	PARALLEL		50 mA	65536 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	125 Cel		64KX8	64K	-55 Cel	NO		QUAD	R-PQCC-J32				100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128				.0005 Amp		120 ns		YES
X28C513J-15T1	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	150 ns	5	YES
X28C512J-15T1	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	150 ns	5	YES
X28HC256JZ-15	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		32KX8	32K	0 Cel		MATTE TIN	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm		5 ms	262144 bit	4.5 V			e3	30	260		13.97 mm	150 ns	5
X28HC256JZ-15T13	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		32KX8	32K	0 Cel		MATTE TIN	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm		5 ms	262144 bit	4.5 V			e3	30	260		13.97 mm	150 ns	5
X28HC64J-90	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		8KX8	8K	0 Cel			QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm		5 ms	65536 bit	4.5 V							13.97 mm	90 ns	5
X28HC256JZ-12	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		32KX8	32K	0 Cel		MATTE TIN	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm		5 ms	262144 bit	4.5 V			e3	30	260		13.97 mm	120 ns	5
X28HC64JI-12T1	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	100	1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD	QUAD	R-PQCC-J32	5	5.5 V	3.55 mm	1000000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	65536 bit	4.5 V	SOFTWARE DATA PROTECTION; 64 BYTE PAGE WRITE; 100 YEARS DATA RETENTION	64	e0			.0002 Amp	13.97 mm	120 ns	5	YES
X28HC64JI-90T2	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5			8	CHIP CARRIER			100	1.27 mm	85 Cel		8KX8	8K	-40 Cel			QUAD	R-PQCC-J32		5.5 V	3.56 mm		11.43 mm	Not Qualified		65536 bit	4.5 V	SOFTWARE DATA PROTECTION; 64 BYTE PAGE WRITE; 100 YEARS DATA RETENTION						13.97 mm	90 ns	5
X28HC256J-12T13	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		32KX8	32K	0 Cel			QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm		5 ms	262144 bit	4.5 V							13.97 mm	120 ns	5
X28HC64JZ-70T1	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel		8KX8	8K	0 Cel	NO	MATTE TIN	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm	1000000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	65536 bit	4.5 V		64	e3	30	245	.0002 Amp	13.97 mm	70 ns	5	YES
X28HC64J-90T1	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5			8	CHIP CARRIER			100	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel			QUAD	R-PQCC-J32		5.5 V	3.56 mm		11.43 mm	Not Qualified		65536 bit	4.5 V	SOFTWARE DATA PROTECTION; 64 BYTE PAGE WRITE; 100 YEARS DATA RETENTION						13.97 mm	90 ns	5
X28HC256JZ-12T1	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		32KX8	32K	0 Cel		MATTE TIN	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm	Not Qualified	5 ms	262144 bit	4.5 V			e3	30	260		13.97 mm	120 ns	5
X28HC256JZ-90T1	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		32KX8	32K	0 Cel		MATTE TIN	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm	Not Qualified	5 ms	262144 bit	4.5 V			e3	30	260		13.97 mm	90 ns	5
X28HC256J-15T13	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		32KX8	32K	0 Cel			QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm		5 ms	262144 bit	4.5 V							13.97 mm	150 ns	5
X28HC256JZ-90	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		32KX8	32K	0 Cel		MATTE TIN	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm		5 ms	262144 bit	4.5 V			e3	30	260		13.97 mm	90 ns	5
X28HC64JZ-70	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		8KX8	8K	0 Cel		MATTE TIN	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm		5 ms	65536 bit	4.5 V			e3	30	245		13.97 mm	70 ns	5
X28HC64JIZ-70T1	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO	MATTE TIN	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm	1000000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	65536 bit	4.5 V		64	e3	30	245	.0002 Amp	13.97 mm	70 ns	5	YES
X28HC64J-12T1	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	100	1.27 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD	QUAD	R-PQCC-J32	5	5.5 V	3.55 mm	1000000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	65536 bit	4.5 V	SOFTWARE DATA PROTECTION; 64 BYTE PAGE WRITE; 100 YEARS DATA RETENTION	64	e0		225	.0002 Amp	13.97 mm	120 ns	5	YES
X28HC256JIZ-90T13	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel		MATTE TIN	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm		5 ms	262144 bit	4.5 V			e3	30	260		13.97 mm	90 ns	5
X28HC256JIZ-90T	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		100	1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	MATTE TIN	QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm		5 ms	262144 bit	4.5 V		128	e3			.0005 Amp	13.97 mm	90 ns	5	YES
X28HC64JI-12	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		8KX8	8K	-40 Cel			QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm		5 ms	65536 bit	4.5 V							13.97 mm	120 ns	5
X28HC64J-70T1	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5			8	CHIP CARRIER			100	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel			QUAD	R-PQCC-J32		5.5 V	3.56 mm		11.43 mm	Not Qualified		65536 bit	4.5 V	SOFTWARE DATA PROTECTION; 64 BYTE PAGE WRITE; 100 YEARS DATA RETENTION						13.97 mm	70 ns	5
X28HC64JZ-12	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		8KX8	8K	0 Cel		MATTE TIN	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm		5 ms	65536 bit	4.5 V			e3	30	245		13.97 mm	120 ns	5
X28HC256JIZ-12T13	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel		MATTE TIN	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm		5 ms	262144 bit	4.5 V			e3	30	260		13.97 mm	120 ns	5
X28HC64JIZ-90T1	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO	MATTE TIN	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm	1000000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	65536 bit	4.5 V		64	e3	30	245	.0002 Amp	13.97 mm	90 ns	5	YES
X28HC256JIZ-15T1	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel		MATTE TIN	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm	Not Qualified	5 ms	262144 bit	4.5 V			e3	30	260		13.97 mm	150 ns	5
X28HC256JIZ-15T13	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel		MATTE TIN	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm		5 ms	262144 bit	4.5 V			e3	30	260		13.97 mm	150 ns	5
X28HC256JZ-90T13	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		32KX8	32K	0 Cel		MATTE TIN	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm		5 ms	262144 bit	4.5 V			e3	30	260		13.97 mm	90 ns	5
X28HC256JZ-12T13	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		32KX8	32K	0 Cel		MATTE TIN	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm		5 ms	262144 bit	4.5 V			e3	30	260		13.97 mm	120 ns	5
X28HC256JZ-15T1	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		32KX8	32K	0 Cel		MATTE TIN	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm	Not Qualified	5 ms	262144 bit	4.5 V			e3	30	260		13.97 mm	150 ns	5
X28HC256JI-12T13	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel			QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm		5 ms	262144 bit	4.5 V							13.97 mm	120 ns	5
X28HC64JIZ-70	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		8KX8	8K	-40 Cel		MATTE TIN	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm		5 ms	65536 bit	4.5 V			e3	30	245		13.97 mm	70 ns	5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.