QCCJ EEPROM 1,527

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
XC17128EPC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	5		5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	128KX1	128K	0 Cel		Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J20	3	5.25 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified		131072 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	8.9662 mm
XC17V04PC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	3.3		3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel		Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified		4194304 bit	3 V			e0	30	225	.001 Amp	8.9662 mm
XC1736EPCG20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		36288 words		5			1	CHIP CARRIER				1.27 mm	85 Cel		36288X1	36288	-40 Cel		Matte Tin (Sn)	QUAD	S-PQCC-J20	3	5.5 V	4.572 mm			8.9662 mm	Not Qualified		36288 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e3	30	245		8.9662 mm
XC17128LPC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	5 mA	131072 words	COMMON	5		3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	128KX1	128K	0 Cel		TIN LEAD	QUAD	S-PQCC-J20	3	5.25 V	4.572 mm		10 MHz	8.9662 mm	Not Qualified		131072 bit	4.75 V			e0	30	225	.00005 Amp	8.9662 mm
XC17V16PC44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3		3.3	8	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel		Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J44	3	3.6 V	4.57 mm		20 MHz	16.5862 mm	Not Qualified		16777216 bit	3 V			e0	30	225	.001 Amp	16.5862 mm
XC17128ELPCG20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		131072 words		3.3			1	CHIP CARRIER				1.27 mm	85 Cel		128KX1	128K	-40 Cel		Matte Tin (Sn)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm			8.9662 mm	Not Qualified		131072 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e3	30	245		8.9662 mm
XC17256LPC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	5 mA	262144 words	COMMON	5		3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel		TIN LEAD	QUAD	S-PQCC-J20	3	5.25 V	4.572 mm		10 MHz	8.9662 mm	Not Qualified		262144 bit	4.75 V			e0	30	225	.00005 Amp	8.9662 mm
XC1718LPC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	5 mA	18144 words	COMMON	5		3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	18144X1	18144	-40 Cel		TIN LEAD	QUAD	S-PQCC-J20	3	5.5 V	4.572 mm		2.5 MHz	8.9662 mm	Not Qualified		18144 bit	4.5 V			e0	30	225	.0015 Amp	8.9662 mm
XC1701-PC20M	Xilinx	CONFIGURATION MEMORY	MILITARY	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		1048576 words		5			1	CHIP CARRIER				1.27 mm	125 Cel		1MX1	1M	-55 Cel		TIN LEAD	QUAD	S-PQCC-J20	3	5.5 V	4.57 mm			8.9662 mm	Not Qualified		1048576 bit	4.5 V			e0				8.9662 mm	45 ns
XC17V04PC44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	3.3		3.3	1	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel		Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J44	3	3.6 V	4.57 mm		15 MHz	16.5862 mm	Not Qualified		4194304 bit	3 V			e0	30	225	.001 Amp	16.5862 mm
XC1765DPC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	5		5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel		TIN LEAD	QUAD	S-PQCC-J20	3	5.5 V	4.572 mm		5 MHz	8.9662 mm	Not Qualified		65536 bit	4.5 V			e0	30	225	.0015 Amp	8.9662 mm
XC17512LPCG20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		524288 words		3.3			1	CHIP CARRIER				1.27 mm	70 Cel		512KX1	512K	0 Cel		MATTE TIN	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm			8.9662 mm	Not Qualified		524288 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e3	30	245		8.9662 mm
XC17V04PCG20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		4194304 words		3.3			1	CHIP CARRIER				1.27 mm	70 Cel		4MX1	4M	0 Cel		Matte Tin (Sn)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm			8.9662 mm	Not Qualified		4194304 bit	3 V			e3	30	245		8.9662 mm
XC17V01PCG20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		1048576 words		3.3			1	CHIP CARRIER				1.27 mm	70 Cel		1MX1	1M	0 Cel		Matte Tin (Sn)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm			8.9662 mm	Not Qualified		1048576 bit	3 V			e3	30	245		8.9662 mm
XC1701LPC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	1048576 words	COMMON	3.3		3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified		1048576 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	8.9662 mm
XC1701LPCG20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	1048576 words	COMMON	3.3		3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel		Matte Tin (Sn)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified		1048576 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e3	30	245	.00005 Amp	8.9662 mm
XC17512LPC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	5 mA	524288 words	COMMON	3.3		3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	512KX1	512K	-40 Cel		Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified		524288 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	8.9662 mm
5962-9951401QYB	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE	CERAMIC, GLASS-SEALED	YES	1	CMOS	MIL-PRF-38535 Class Q	J BEND	SERIAL	SYNCHRONOUS	10 mA	1048576 words		3.3			1	CHIP CARRIER				1.27 mm	125 Cel		1MX1	1M	-55 Cel		TIN LEAD	QUAD	S-GQCC-J44		3.6 V	4.826 mm		15 MHz	16.51 mm	Not Qualified		1048576 bit	3 V			e0			.0003 Amp	16.51 mm	45 ns	3.3
XC1765ELPC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON	3.3		3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel		Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm		2.5 MHz	8.9662 mm	Not Qualified		65536 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	8.9662 mm
XC17128DPC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	5		5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	128KX1	128K	0 Cel		TIN LEAD	QUAD	S-PQCC-J20	3	5.25 V	4.572 mm		12.5 MHz	8.9662 mm	Not Qualified		131072 bit	4.75 V			e0	30	225	.00005 Amp	8.9662 mm
X28C513JZ-15	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words		5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	150 ns	5	YES
X28C512JMB-25	Renesas Electronics	EEPROM	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	38535Q/M;38534H;883B	J BEND	PARALLEL		50 mA	65536 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	125 Cel		64KX8	64K	-55 Cel	NO		QUAD	R-PQCC-J32				100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128				.0005 Amp		250 ns		YES
X28C512J-15	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words		5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	150 ns	5	YES
X28C512J	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words		5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	90 ns	5	YES
X28C513J-20T1	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words		5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	200 ns	5	YES
X28C513JM-12	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words		5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	125 Cel	3-STATE	64KX8	64K	-55 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	120 ns	5	YES
X28C513J-12	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words		5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	120 ns	5	YES
X28C512JI-15T1	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words		5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	150 ns	5	YES
X28C512JI-12	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words		5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	120 ns	5	YES
X28C513JM-15	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words		5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	125 Cel	3-STATE	64KX8	64K	-55 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	150 ns	5	YES
X28C512JI-15	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words		5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	150 ns	5	YES
X28C513JZ-15T1	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words		5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	150 ns	5	YES
X28C513JIZ-15T1	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words		5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	150 ns	5	YES
X28C513JI-12T1	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words		5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	120 ns	5	YES
X28C512J-12T1	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words		5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	120 ns	5	YES
X28C512J-90	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL		50 mA	65536 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel		64KX8	64K	0 Cel	NO		QUAD	R-PQCC-J32				100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128				.0005 Amp		90 ns		YES
X28C512JIZ-12T1	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words		5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	120 ns	5	YES
X28C512JM-20	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words		5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	125 Cel	3-STATE	64KX8	64K	-55 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	200 ns	5	YES
X28C513J-15	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words		5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	150 ns	5	YES
X28C513JIZ-12T1	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words		5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	120 ns	5	YES
X28C513JZ-12T1	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words		5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	120 ns	5	YES
X28C512JZ-12	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words		5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	120 ns	5	YES
X28C512JIZ-12	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words		5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	120 ns	5	YES
X28C512J-12	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words		5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	120 ns	5	YES
X28C513JIZ-15	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words		5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	150 ns	5	YES
X28C512JMB-20	Renesas Electronics	EEPROM	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	38535Q/M;38534H;883B	J BEND	PARALLEL		50 mA	65536 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	125 Cel		64KX8	64K	-55 Cel	NO		QUAD	R-PQCC-J32				100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128				.0005 Amp		200 ns		YES
X28C513JI-12	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words		5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	120 ns	5	YES
X28C512JM-25	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words		5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	125 Cel	3-STATE	64KX8	64K	-55 Cel	NO		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	90 ns	5	YES

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.